JPS5843522A - ウエハ上の層をエツチングする方法 - Google Patents
ウエハ上の層をエツチングする方法Info
- Publication number
- JPS5843522A JPS5843522A JP57144881A JP14488182A JPS5843522A JP S5843522 A JPS5843522 A JP S5843522A JP 57144881 A JP57144881 A JP 57144881A JP 14488182 A JP14488182 A JP 14488182A JP S5843522 A JPS5843522 A JP S5843522A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- layer
- etching
- etched
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 229920000642 polymer Polymers 0.000 claims description 25
- 229920001230 polyarylate Polymers 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- -1 polytetrafluoroethylene form Polymers 0.000 claims description 4
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 241000238558 Eucarida Species 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000011109 contamination Methods 0.000 description 8
- 238000000992 sputter etching Methods 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- AGOYDEPGAOXOCK-KCBOHYOISA-N clarithromycin Chemical compound O([C@@H]1[C@@H](C)C(=O)O[C@@H]([C@@]([C@H](O)[C@@H](C)C(=O)[C@H](C)C[C@](C)([C@H](O[C@H]2[C@@H]([C@H](C[C@@H](C)O2)N(C)C)O)[C@H]1C)OC)(C)O)CC)[C@H]1C[C@@](C)(OC)[C@@H](O)[C@H](C)O1 AGOYDEPGAOXOCK-KCBOHYOISA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 241000272517 Anseriformes Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GEMOGPJBVYNSSC-UHFFFAOYSA-N [Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ta+5].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ta+5].[Ta+5].[Ta+5].[Ta+5].[Ta+5] Chemical compound [Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ta+5].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ta+5].[Ta+5].[Ta+5].[Ta+5].[Ta+5] GEMOGPJBVYNSSC-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SNICXCGAKADSCV-UHFFFAOYSA-N nicotine Chemical compound CN1CCCC1C1=CC=CN=C1 SNICXCGAKADSCV-UHFFFAOYSA-N 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000021110 pickles Nutrition 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/914—Differential etching apparatus including particular materials of construction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/917—Differential etching apparatus having a barrel reactor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/295,839 US4397724A (en) | 1981-08-24 | 1981-08-24 | Apparatus and method for plasma-assisted etching of wafers |
| US295839 | 1981-08-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5843522A true JPS5843522A (ja) | 1983-03-14 |
| JPH0462170B2 JPH0462170B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-10-05 |
Family
ID=23139426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57144881A Granted JPS5843522A (ja) | 1981-08-24 | 1982-08-23 | ウエハ上の層をエツチングする方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4397724A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| JP (1) | JPS5843522A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1984003798A1 (en) * | 1983-03-18 | 1984-09-27 | Matsushita Electric Ind Co Ltd | Reactive ion etching apparatus |
| JPS59207632A (ja) * | 1983-04-29 | 1984-11-24 | シ−メンス・アクチエンゲゼルシヤフト | 金属ケイ化物又はケイ化物・ポリシリコン二重層構造の製造方法 |
| JPS61228648A (ja) * | 1985-01-22 | 1986-10-11 | アプライド マテリアルズ インコ−ポレ−テツド | 半導体ウェハ製造装置、半導体ウェハ処理装置及びチャック装置 |
| EP0128242A3 (en) * | 1983-04-20 | 1987-05-06 | International Business Machines Corporation | Etching apparatus for polymer film patterning |
| JPH0631703B2 (ja) * | 1986-02-03 | 1994-04-27 | ヒユ−ズ・エアクラフト・カンパニ− | ヒートパイプおよびヒートパイプを保持するための装置 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3248121A1 (de) * | 1982-12-24 | 1984-06-28 | Leybold-Heraeus GmbH, 5000 Köln | Hochleistungs-katodenanordnung fuer die erzeugung von mehrfachschichten |
| US4495090A (en) * | 1983-01-03 | 1985-01-22 | Massachusetts Institute Of Technology | Gas mixtures for aluminum etching |
| US4481251A (en) * | 1983-04-27 | 1984-11-06 | At&T Bell Laboratories | Polyarylate polymer coatings |
| US4526670A (en) * | 1983-05-20 | 1985-07-02 | Lfe Corporation | Automatically loadable multifaceted electrode with load lock mechanism |
| US4439261A (en) * | 1983-08-26 | 1984-03-27 | International Business Machines Corporation | Composite pallet |
| JPS60198822A (ja) * | 1984-03-23 | 1985-10-08 | Anelva Corp | ドライエツチング装置 |
| JPH0622222B2 (ja) * | 1984-09-18 | 1994-03-23 | 株式会社東芝 | 光処理装置 |
| JP2868764B2 (ja) | 1984-12-18 | 1999-03-10 | エイ・ティ・アンド・ティ・コーポレーション | デバイス製造方法 |
| US4871420A (en) * | 1984-12-18 | 1989-10-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Selective etching process |
| US4734157A (en) * | 1985-08-27 | 1988-03-29 | International Business Machines Corporation | Selective and anisotropic dry etching |
| US5112435A (en) * | 1985-10-11 | 1992-05-12 | Applied Materials, Inc. | Materials and methods for etching silicides, polycrystalline silicon and polycides |
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US4937206A (en) * | 1989-07-10 | 1990-06-26 | Applied Materials, Inc. | Method and apparatus for preventing cross contamination of species during the processing of semiconductor wafers |
| DE3935189A1 (de) * | 1989-10-23 | 1991-05-08 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
| JPH03156927A (ja) * | 1989-10-24 | 1991-07-04 | Hewlett Packard Co <Hp> | アルミ・メタライゼーションのパターン形成方法 |
| JPH03148118A (ja) * | 1989-11-02 | 1991-06-24 | Fujitsu Ltd | 半導体製造装置 |
| DE4022708A1 (de) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | Aetz- oder beschichtungsanlagen |
| JP3024449B2 (ja) * | 1993-07-24 | 2000-03-21 | ヤマハ株式会社 | 縦型熱処理炉及び熱処理方法 |
| US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
| US5698113A (en) * | 1996-02-22 | 1997-12-16 | The Regents Of The University Of California | Recovery of Mo/Si multilayer coated optical substrates |
| US5911830A (en) * | 1996-05-09 | 1999-06-15 | Lucent Technologies Inc. | Method and fixture for laser bar facet coating |
| US6093655A (en) | 1998-02-12 | 2000-07-25 | Micron Technology, Inc. | Plasma etching methods |
| US6235213B1 (en) | 1998-05-18 | 2001-05-22 | Micron Technology, Inc. | Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers |
| US6291358B1 (en) | 1999-10-15 | 2001-09-18 | Micron Technology, Inc. | Plasma deposition tool operating method |
| US6613442B2 (en) | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| US7202171B2 (en) * | 2001-01-03 | 2007-04-10 | Micron Technology, Inc. | Method for forming a contact opening in a semiconductor device |
| US20030159778A1 (en) * | 2002-02-27 | 2003-08-28 | Kunihiko Koroyasu | Plasma processing apparatus, protecting layer therefor and installation of protecting layer |
| US7022620B2 (en) * | 2003-11-18 | 2006-04-04 | Micron Technology, Inc. | Conditioning of a reaction chamber |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5394565U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-12-29 | 1978-08-01 | ||
| JPS5394565A (en) * | 1977-01-31 | 1978-08-18 | Matsushita Electric Works Ltd | Production of phenolic laminated plate |
| JPS53124979A (en) * | 1977-04-07 | 1978-10-31 | Fujitsu Ltd | Plasma etching method |
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2594243A (en) * | 1947-10-13 | 1952-04-22 | Winkler Alfred | Sprinkler |
| US3627599A (en) * | 1969-04-25 | 1971-12-14 | Rca Corp | Method of applying an n,n{40 diallylmelamine resist to a surface |
| DE2547792C3 (de) * | 1974-10-25 | 1978-08-31 | Hitachi, Ltd., Tokio | Verfahren zur Herstellung eines Halbleiterbauelementes |
| US4153741A (en) * | 1976-07-30 | 1979-05-08 | Rca Corporation | Method for forming a surface relief pattern in a poly(olefin sulfone) layer |
| US4126712A (en) * | 1976-07-30 | 1978-11-21 | Rca Corporation | Method of transferring a surface relief pattern from a wet poly(olefin sulfone) layer to a metal layer |
| JPS5414679A (en) * | 1977-07-06 | 1979-02-03 | Hitachi Ltd | Plasma etching device |
| JPS54162929A (en) * | 1978-06-14 | 1979-12-25 | Fujitsu Ltd | Sheet cut control system |
| US4268374A (en) * | 1979-08-09 | 1981-05-19 | Bell Telephone Laboratories, Incorporated | High capacity sputter-etching apparatus |
| US4278753A (en) * | 1980-02-25 | 1981-07-14 | Horizons Research Incorporated | Plasma developable photoresist composition with polyvinyl formal binder |
| US4333793A (en) * | 1980-10-20 | 1982-06-08 | Bell Telephone Laboratories, Incorporated | High-selectivity plasma-assisted etching of resist-masked layer |
-
1981
- 1981-08-24 US US06/295,839 patent/US4397724A/en not_active Expired - Lifetime
-
1982
- 1982-08-23 JP JP57144881A patent/JPS5843522A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5394565U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-12-29 | 1978-08-01 | ||
| JPS5394565A (en) * | 1977-01-31 | 1978-08-18 | Matsushita Electric Works Ltd | Production of phenolic laminated plate |
| JPS53124979A (en) * | 1977-04-07 | 1978-10-31 | Fujitsu Ltd | Plasma etching method |
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1984003798A1 (en) * | 1983-03-18 | 1984-09-27 | Matsushita Electric Ind Co Ltd | Reactive ion etching apparatus |
| EP0128242A3 (en) * | 1983-04-20 | 1987-05-06 | International Business Machines Corporation | Etching apparatus for polymer film patterning |
| JPS59207632A (ja) * | 1983-04-29 | 1984-11-24 | シ−メンス・アクチエンゲゼルシヤフト | 金属ケイ化物又はケイ化物・ポリシリコン二重層構造の製造方法 |
| JPS61228648A (ja) * | 1985-01-22 | 1986-10-11 | アプライド マテリアルズ インコ−ポレ−テツド | 半導体ウェハ製造装置、半導体ウェハ処理装置及びチャック装置 |
| JPH0631703B2 (ja) * | 1986-02-03 | 1994-04-27 | ヒユ−ズ・エアクラフト・カンパニ− | ヒートパイプおよびヒートパイプを保持するための装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4397724A (en) | 1983-08-09 |
| JPH0462170B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-10-05 |
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