JPS5842282A - Hall element - Google Patents
Hall elementInfo
- Publication number
- JPS5842282A JPS5842282A JP56139559A JP13955981A JPS5842282A JP S5842282 A JPS5842282 A JP S5842282A JP 56139559 A JP56139559 A JP 56139559A JP 13955981 A JP13955981 A JP 13955981A JP S5842282 A JPS5842282 A JP S5842282A
- Authority
- JP
- Japan
- Prior art keywords
- hall
- current input
- hall element
- diffusion layer
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は磁気感度全向上させ九両趨部に電流入力電極を
有するホール素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Hall element having a total improvement in magnetic sensitivity and having current input electrodes on both sides.
磁気Ksする素子の一つとしてホール素子がよく使われ
ているが、従来のホール素子の構造は。A Hall element is often used as one of the elements that generates magnetic Ks, but the structure of the conventional Hall element is as follows.
鉋1図に示すように長方形のホール効果を示す物質片1
0(この物質としては主に半導体が用いられているので
以下半導体片と称す、)の両端部に電流入力電極1.2
を取り付け、この半導体片100両側辺にホール出力電
極51.52を設は良構成からなっている。このホール
素子Kmfi入力電極1.2より電tltIt−流すと
共に、半導体面に垂直に磁界Bt加えると、半導体片1
0を流れるキャリアに横方向のローレンツ力が作用しキ
ャリアが一側面に片寄るため、内部にホール電界を生じ
両側辺に設は走ホール出力電極51.S’2の関にホー
ル電圧vMがめられれる。第1!!IK示す従来の電子
において、−流入力電極1.2にかけられ°る電圧が一
定でかつ半導体片10に垂直な一定磁場が加えられてい
るとき、ホール電圧Vi (即ちホール素子の磁気感[
Bit)を比v/L(ホール出力電極51.52間の輻
Wの電流入力電極1.2間の長さT、に対する比)に対
して図示すると第1図のようになる。即ちW/TJ の
値が小さいうちは磁気感度smけW/L K比例して増
加するが、VLの値が大きくなると磁、気感度81にの
懐は811m1LXで飽和する。この鉋和磁気慇f81
1maXは牛導体の害#度μによって決ってしまう為、
同一移動度の材料でこの飽和磁気感1[BHxnhx以
上のi!!気感度のホール素子を得ようとする試みはほ
とんど成功していない。例えば第2図のような台形形状
のホール素子は、第1図に示した比W/L を有する
長方形のホール素子と全く等価であることが理論的にも
実験的にも証明されている。又、扇形めるいは菱形の素
子形状のホール素子も111M示し良長方形のホール素
子と等価になることが証明されているので、素子形状を
変えることにより磁気部jft高(することは困難であ
った。A piece of material 1 showing a rectangular Hall effect as shown in Figure 1.
Current input electrodes 1.
is attached, and Hall output electrodes 51 and 52 are provided on both sides of this semiconductor piece 100. When a current tltIt- is caused to flow from this Hall element Kmfi input electrode 1.2 and a magnetic field Bt is applied perpendicularly to the semiconductor surface, the semiconductor piece 1
A lateral Lorentz force acts on the carriers flowing through the carrier, causing the carriers to be biased to one side, creating an internal Hall electric field and running Hall output electrodes 51. A Hall voltage vM is observed in relation to S'2. 1st! ! In the conventional electron beam shown by IK, when the voltage applied to the -current input electrode 1.2 is constant and a constant magnetic field perpendicular to the semiconductor chip 10 is applied, the Hall voltage Vi (i.e., the magnetic sensitivity of the Hall element [
FIG. 1 shows the ratio v/L (ratio of the radius W between the Hall output electrodes 51 and 52 to the length T between the current input electrodes 1 and 2). That is, while the value of W/TJ is small, the magnetic sensitivity sm increases in proportion to W/LK, but as the value of VL increases, the magnetic sensitivity 81 saturates at 811mlLX. This plane magnetic holder f81
Since 1maX is determined by the degree μ of the bull conductor,
This saturation magnetic sensation 1[BHxnhx or more i! ! Attempts to obtain a sensitive Hall element have met with little success. For example, it has been theoretically and experimentally proven that a trapezoidal Hall element as shown in FIG. 2 is completely equivalent to a rectangular Hall element having the ratio W/L shown in FIG. In addition, it has been proven that a Hall element with a fan-shaped or diamond-shaped element shape is equivalent to a 111M rectangular Hall element, so by changing the element shape, the height of the magnetic part jft (which is difficult to Ta.
本発明は従来の長方形のホール素子形゛状で得られる鉋
和磁念感度simax以上の磁気感度を得ることのでき
る新規な形状のホール素子を提供しようとするものであ
る。The present invention aims to provide a Hall element with a novel shape that can obtain a magnetic sensitivity greater than the summed magnetic sensitivity simax obtained with a conventional rectangular Hall element shape.
従来の長方形のホール素子において、磁気感度8Mがw
/bの値に対して飽和する理由は、発生するホール電圧
が電流入力電極1,2に短絡される影41により、理論
的に6られれるはずのホール電圧の減少が起るためと考
えられる。従って高い磁気感度を得るには、電流入力電
極1,2と出力電極、51.52との間の短絡効果音軽
減することができればよいことKなる。このような考え
に基づ〈新規な電流入力電極構造を有するホール素子を
第4図に示す、第4図において、電流入力電極1゜2は
互いの間隔が中央部分で狭く、その両側辺部で広い形状
になっている0本発明のこの形状によればホール出力電
極51,52に、近い側辺部は電流入力電極1,2から
遠く離れている為、ここに現われるホール電圧は電流入
力電極1.2によって短絡される影響を受けKぐいこと
は明らかである。一方、この側辺部においては電流久方
端子1゜2間の距離が中央部より広くなっているだけ電
界71 F、が中央部の電界1番 より弱くその結果と
して側辺部での局所的なホール起電力は弱まるというマ
イナス面もある。In the conventional rectangular Hall element, the magnetic sensitivity is 8M w
The reason for saturation with respect to the value of /b is thought to be that the generated Hall voltage is short-circuited to the current input electrodes 1 and 2, causing a decrease in the Hall voltage that should theoretically be reduced by 6. . Therefore, in order to obtain high magnetic sensitivity, it is only necessary to reduce the short circuit sound effect between the current input electrodes 1 and 2 and the output electrodes 51 and 52. Based on this idea, a Hall element having a novel current input electrode structure is shown in FIG. 4. In FIG. According to this shape of the present invention, the side parts near the Hall output electrodes 51 and 52 are far away from the current input electrodes 1 and 2, so the Hall voltage appearing here is equal to the current input It is clear that it is affected by the short circuit caused by electrode 1.2. On the other hand, in this side part, the electric field 71 F is weaker than the electric field in the center part because the distance between the current terminals 1°2 is wider than in the center part, and as a result, the electric field 71 F is weaker locally in the side part. The downside is that the Hall electromotive force is weakened.
しかし、この形状のホール素子の計算様シ電し−ション
結果、及び実験結果によれば51g1rxnc示し九従
来の長方形のホール素子で得られる飽和磁気感fli
8mmaxの2割から3割増の磁気感度のホール素子t
−各易に得ることができた。However, according to the calculation results and experimental results of a Hall element with this shape, the saturation magnetic sensitivity obtained with a conventional rectangular Hall element is 51g1rxnc.
Hall element t with 20% to 30% more magnetic sensitivity than 8mmmax
-Easy to obtain.
第5図及び第6FjtJ[本発明による入力電極形状の
ホール素子の鎗の実施例を°示す。FIGS. 5 and 6 show embodiments of a Hall element having an input electrode shape according to the present invention.
以上均一な膜厚の牛導体片のホール効果を利用したホー
ル素子について論じてき九が、以上の一輪はMOB )
ランジスタのチャンネルを主畳II作部としたホニル素
子についても当てはめることができる。第7@に示した
長方形のMol形のホール素子においてドレイン拡散層
6とソース拡散層7の間隔り及びゲート21の幅Wで決
まる長方形のチャンネル20のw/L v値を大! (
L、えW#。Above we have discussed a Hall element that utilizes the Hall effect of a piece of conductor with a uniform film thickness, but the above one is MOB)
This can also be applied to a Honil element in which the channel of the transistor is the main converter. In the rectangular Mol-type Hall element shown in No. 7 @, increase the w/Lv value of the rectangular channel 20 determined by the distance between the drain diffusion layer 6 and the source diffusion layer 7 and the width W of the gate 21! (
L, W#.
ドレイン拡散層6及びソース拡散層7と同じ拡散層によ
り形成されたホール出力電極56,579C現われるホ
ール電圧の磁気感度sH#i輩OBト2ンジスメがその
非飽和領域で動作しているときはもちろん、飽和領域で
動作している時でも第5図で示すようkSHmaXて飽
和し、飽和磁気感度BHWaXを有するととKなる。そ
してこの飽和磁気感度を超える磁気感度を台形、扇形あ
るいは菱形等のチ ネル形状を有するホール素子で達成
しようとすることは実験的にも理論的にも無理でめるこ
とが証明されている。しかし第8図に示すようにMOB
)ッンジスタのドレイン・ソース間隔がホール出力電
極56.57の近傍で良(なっている形状の本発明のM
OB))ンジスタを用いるポール素子においてはその磁
気感度を、第7因の長方形のMOBIJiホール素子の
飽和磁気感度より容易に高めることができる。Of course, when the magnetic sensitivity of the Hall voltage appearing in the Hall output electrodes 56 and 579C formed by the same diffusion layers as the drain diffusion layer 6 and the source diffusion layer 7 is operating in its non-saturation region, , even when operating in the saturation region, it is saturated with kSHmaX as shown in FIG. 5, and has a saturation magnetic sensitivity BHWaX. It has been proven both experimentally and theoretically that it is impossible to achieve magnetic sensitivity exceeding this saturation magnetic sensitivity with a Hall element having a channel shape such as a trapezoid, sector, or rhombus. However, as shown in Figure 8, MOB
) The M of the present invention has a shape in which the drain-source distance of the transistor is good near the Hall output electrodes 56 and 57.
OB)) In a pole element using a resistor, its magnetic sensitivity can be easily made higher than the saturation magnetic sensitivity of the rectangular MOBIJi Hall element of the seventh factor.
上述のように本発明によれば従来のホール素子では実現
できなかった高穐気感度を有するホーム素子を容易に作
ることが可能忙なり、ホーム素子の歩留り、ひいては低
価格に寄与するものと考えられる。As mentioned above, according to the present invention, it is possible to easily produce a home device with high sensitivity, which could not be achieved with conventional Hall elements, which is believed to contribute to the yield of home devices and, ultimately, to lower prices. It will be done.
第1図は従来の長方形の形状のホール素子の構造図であ
り、
第2図は、従来の台形形状のホール素子の構造(2)、
第5図は第1圀のホール素子の磁気感度の形状依存性を
示す図、
第4図1,15図及び第6図にそれぞれ本発明によるホ
ール索子の実施例を示す図、
m7因は従来に、M Oe形のホール素子を示す図、第
8図は本発明によるMO8filのホーに素子の実施例
を示す囚である。
1.2−・・1流入力電極、+10−−一牛導体。
51、s2・*−ル出力IH1,6−−−−yvイy拡
7・−・・・ソース拡散層、 散層、36.
57・・・ホール出力電極としての拡散層。
以 上
第1図
第2図
389−
箪3図
基踵気静度5Mは東、目盛)
第4図
ニー
第5rIA
」−
第6r!AFigure 1 shows the structure of a conventional rectangular Hall element, Figure 2 shows the structure (2) of a conventional trapezoidal Hall element, and Figure 5 shows the magnetic sensitivity of the Hall element in the first area. Figures 1, 15 and 6 are diagrams showing the shape dependence, respectively. FIG. 8 shows an embodiment of a MO8fil element according to the present invention. 1.2--1st current input electrode, +10-- single conductor. 51, s2・*-le output IH1, 6---yvy expansion 7---source diffusion layer, diffusion layer, 36.
57... Diffusion layer as a hole output electrode. That's all Figure 1 Figure 2 389- Figure 3 Base Heel Calmness 5M is east, scale) Figure 4 Knee 5rIA''- 6r! A
Claims (2)
力電極を設け、この物質片の両側辺部にホール出力を極
を設けてなるホール素子において、互いに相対した前記
電流入力電極の関廟をその中央部で狭く、両側辺部では
広い形状としたことを特徴とするホール素子。(1) In a Hall element in which input electrodes are provided at both ends of a piece of material exhibiting the Hall effect, and Hall output poles are provided on both sides of the material piece, the barriers of the current input electrodes facing each other are A Hall element characterized by being narrow at the center and wide at both sides.
タのソース及びドレイン拡散層間の半導体表面近傍の反
転層であり、前記電流人力電極がソース及びドレイン拡
散層であり、又前記ホール出力電極が前記ソース・ドレ
イン拡散層と同じ導電型の拡散層であることを特徴とす
る特許請求の範囲第1項記載のホール素子。(2) The material piece exhibiting the Hall effect is an inversion layer near the semiconductor surface between the source and drain diffusion layers of the M08 transistor, the current input electrode is the source and drain diffusion layer, and the Hall output electrode is the source and drain diffusion layer. - The Hall element according to claim 1, wherein the diffusion layer is of the same conductivity type as the drain diffusion layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56139559A JPS5842282A (en) | 1981-09-04 | 1981-09-04 | Hall element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56139559A JPS5842282A (en) | 1981-09-04 | 1981-09-04 | Hall element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5842282A true JPS5842282A (en) | 1983-03-11 |
Family
ID=15248078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56139559A Pending JPS5842282A (en) | 1981-09-04 | 1981-09-04 | Hall element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5842282A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59220983A (en) * | 1983-05-31 | 1984-12-12 | Matsushita Electronics Corp | Hall element |
JPH034577A (en) * | 1989-06-01 | 1991-01-10 | Toshiba Corp | Electrode shape of hall element |
WO2000052424A1 (en) * | 1999-02-26 | 2000-09-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hall sensor with a reduced offset signal |
JP2004527134A (en) * | 2001-05-25 | 2004-09-02 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Device for measuring B component of magnetic field, magnetic field sensor and ammeter |
US6833599B2 (en) | 2002-02-28 | 2004-12-21 | Denso Corporation | Sensitivity enhancement of semiconductor magnetic sensor |
-
1981
- 1981-09-04 JP JP56139559A patent/JPS5842282A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59220983A (en) * | 1983-05-31 | 1984-12-12 | Matsushita Electronics Corp | Hall element |
JPH034577A (en) * | 1989-06-01 | 1991-01-10 | Toshiba Corp | Electrode shape of hall element |
WO2000052424A1 (en) * | 1999-02-26 | 2000-09-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hall sensor with a reduced offset signal |
CZ301988B6 (en) * | 1999-02-26 | 2010-08-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E. V. | Hall sensor with reduced offset signal |
JP2004527134A (en) * | 2001-05-25 | 2004-09-02 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Device for measuring B component of magnetic field, magnetic field sensor and ammeter |
JP4705315B2 (en) * | 2001-05-25 | 2011-06-22 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Apparatus and magnetic field sensor for measuring a predetermined component of a magnetic field |
US6833599B2 (en) | 2002-02-28 | 2004-12-21 | Denso Corporation | Sensitivity enhancement of semiconductor magnetic sensor |
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