JPS5840848U - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS5840848U
JPS5840848U JP13516281U JP13516281U JPS5840848U JP S5840848 U JPS5840848 U JP S5840848U JP 13516281 U JP13516281 U JP 13516281U JP 13516281 U JP13516281 U JP 13516281U JP S5840848 U JPS5840848 U JP S5840848U
Authority
JP
Japan
Prior art keywords
semiconductor equipment
conductive layer
layer
semiconductor
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13516281U
Other languages
Japanese (ja)
Other versions
JPS62206Y2 (en
Inventor
氏田 清
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP13516281U priority Critical patent/JPS5840848U/en
Publication of JPS5840848U publication Critical patent/JPS5840848U/en
Application granted granted Critical
Publication of JPS62206Y2 publication Critical patent/JPS62206Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は夫々本考案の実施例を示す断面図で
ある。 1は半導体基体、2,4はSiO2層、3は5nO9透
明導電層、6はTi層、7はW層、8はAI導電層であ
る。
1 and 2 are cross-sectional views showing embodiments of the present invention, respectively. 1 is a semiconductor substrate, 2 and 4 are SiO2 layers, 3 is a 5nO9 transparent conductive layer, 6 is a Ti layer, 7 is a W layer, and 8 is an AI conductive layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体素子上に形成された酸化錫による透明導電層に対
してチタン層及びタングステン層を介してアルミニウム
導電層が接続されて成る半導体装置。
A semiconductor device in which an aluminum conductive layer is connected to a transparent conductive layer made of tin oxide formed on a semiconductor element through a titanium layer and a tungsten layer.
JP13516281U 1981-09-11 1981-09-11 semiconductor equipment Granted JPS5840848U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13516281U JPS5840848U (en) 1981-09-11 1981-09-11 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13516281U JPS5840848U (en) 1981-09-11 1981-09-11 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5840848U true JPS5840848U (en) 1983-03-17
JPS62206Y2 JPS62206Y2 (en) 1987-01-07

Family

ID=29928545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13516281U Granted JPS5840848U (en) 1981-09-11 1981-09-11 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5840848U (en)

Also Published As

Publication number Publication date
JPS62206Y2 (en) 1987-01-07

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