JPS6049651U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6049651U JPS6049651U JP1983141290U JP14129083U JPS6049651U JP S6049651 U JPS6049651 U JP S6049651U JP 1983141290 U JP1983141290 U JP 1983141290U JP 14129083 U JP14129083 U JP 14129083U JP S6049651 U JPS6049651 U JP S6049651U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor equipment
- electrode
- abstract
- semiconductor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の半導体装置の断面図であり、１は半導体
、２は絶縁膜、３はバリア金属、４は電極金属である。
第２図ａ、 ｂ図はそれぞれ本考案の実施例による半導
体装置の断面図であり、第３図ａ乃至りは第２図で示す
装置を製造する順序の１例を示す断面図である。１１は
半導体、１２は絶縁膜、１２はバリア金属、１，４は熱
伝導率の小さい絶縁膜、１５は電極金属である。FIG. 1 is a cross-sectional view of a conventional semiconductor device, in which 1 is a semiconductor, 2 is an insulating film, 3 is a barrier metal, and 4 is an electrode metal. FIGS. 2a and 2b are sectional views of semiconductor devices according to embodiments of the present invention, and FIGS. 3a to 3 are sectional views showing an example of the order in which the device shown in FIG. 2 is manufactured. 11 is a semiconductor, 12 is an insulating film, 12 is a barrier metal, 1 and 4 are insulating films with low thermal conductivity, and 15 is an electrode metal.
Claims (1)
電極金属との間に熱伝導率の小さい絶縁膜を介したこと
を特徴とする半導体装置。A semiconductor device characterized in that an insulating film with low thermal conductivity is interposed between a barrier metal deposited on a semiconductor body and an electrode metal for leading out the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983141290U JPS6049651U (en) | 1983-09-12 | 1983-09-12 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983141290U JPS6049651U (en) | 1983-09-12 | 1983-09-12 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6049651U true JPS6049651U (en) | 1985-04-08 |
Family
ID=30316051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983141290U Pending JPS6049651U (en) | 1983-09-12 | 1983-09-12 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6049651U (en) |
-
1983
- 1983-09-12 JP JP1983141290U patent/JPS6049651U/en active Pending
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