JPS583976A - スパツタリングによる成膜方法及びその装置 - Google Patents

スパツタリングによる成膜方法及びその装置

Info

Publication number
JPS583976A
JPS583976A JP9966081A JP9966081A JPS583976A JP S583976 A JPS583976 A JP S583976A JP 9966081 A JP9966081 A JP 9966081A JP 9966081 A JP9966081 A JP 9966081A JP S583976 A JPS583976 A JP S583976A
Authority
JP
Japan
Prior art keywords
sputtering
film
target
plasma
flat plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9966081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0251980B2 (enrdf_load_stackoverflow
Inventor
Hide Kobayashi
秀 小林
Katsuo Abe
勝男 阿部
Tsuneaki Kamei
亀井　常彰
Hideki Tateishi
秀樹 立石
Susumu Aiuchi
進 相内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9966081A priority Critical patent/JPS583976A/ja
Priority to US06/343,858 priority patent/US4401539A/en
Publication of JPS583976A publication Critical patent/JPS583976A/ja
Publication of JPH0251980B2 publication Critical patent/JPH0251980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
JP9966081A 1981-01-30 1981-06-29 スパツタリングによる成膜方法及びその装置 Granted JPS583976A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9966081A JPS583976A (ja) 1981-06-29 1981-06-29 スパツタリングによる成膜方法及びその装置
US06/343,858 US4401539A (en) 1981-01-30 1982-01-29 Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9966081A JPS583976A (ja) 1981-06-29 1981-06-29 スパツタリングによる成膜方法及びその装置

Publications (2)

Publication Number Publication Date
JPS583976A true JPS583976A (ja) 1983-01-10
JPH0251980B2 JPH0251980B2 (enrdf_load_stackoverflow) 1990-11-09

Family

ID=14253195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9966081A Granted JPS583976A (ja) 1981-01-30 1981-06-29 スパツタリングによる成膜方法及びその装置

Country Status (1)

Country Link
JP (1) JPS583976A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2549495A1 (fr) * 1983-07-19 1985-01-25 Varian Associates Source de revetement par pulverisation a magnetron pour des cibles magnetiques et non magnetiques
JPS6039161A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド スパツタ・コーテイングを制御する方法及び装置
JPS61201773A (ja) * 1985-03-04 1986-09-06 Showa Denko Kk スパツタリング方法及びその装置
JPS63140078A (ja) * 1986-11-29 1988-06-11 Tokyo Electron Ltd スパツタリングによる成膜方法
JPS63183168A (ja) * 1987-01-23 1988-07-28 Hitachi Ltd スパツタリング方法
JPS6425979A (en) * 1988-05-11 1989-01-27 Hitachi Ltd Sputtering device of planar magnetron system
US7479712B2 (en) 2003-09-10 2009-01-20 Applied Materials Gmbh & Co. Kg. Configuration for N consumers of electric energy, of which M consumers are simultaneously supplied with energy
JP2022539246A (ja) * 2019-07-16 2022-09-07 アプライド マテリアルズ インコーポレイテッド 改良されたプラズマ制御のためのｅｍ源

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2549495A1 (fr) * 1983-07-19 1985-01-25 Varian Associates Source de revetement par pulverisation a magnetron pour des cibles magnetiques et non magnetiques
JPS6039161A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド スパツタ・コーテイングを制御する方法及び装置
JPS6039160A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド 磁性及び非磁性双方のターゲツト物質のためのマグネトロンスパツタコーテイング源
JPS61201773A (ja) * 1985-03-04 1986-09-06 Showa Denko Kk スパツタリング方法及びその装置
JPS63140078A (ja) * 1986-11-29 1988-06-11 Tokyo Electron Ltd スパツタリングによる成膜方法
JPS63183168A (ja) * 1987-01-23 1988-07-28 Hitachi Ltd スパツタリング方法
JPS6425979A (en) * 1988-05-11 1989-01-27 Hitachi Ltd Sputtering device of planar magnetron system
US7479712B2 (en) 2003-09-10 2009-01-20 Applied Materials Gmbh & Co. Kg. Configuration for N consumers of electric energy, of which M consumers are simultaneously supplied with energy
JP2022539246A (ja) * 2019-07-16 2022-09-07 アプライド マテリアルズ インコーポレイテッド 改良されたプラズマ制御のためのｅｍ源

Also Published As

Publication number Publication date
JPH0251980B2 (enrdf_load_stackoverflow) 1990-11-09

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