JPS5839600Y2 - 書き替え可能rom - Google Patents

書き替え可能rom

Info

Publication number
JPS5839600Y2
JPS5839600Y2 JP6221879U JP6221879U JPS5839600Y2 JP S5839600 Y2 JPS5839600 Y2 JP S5839600Y2 JP 6221879 U JP6221879 U JP 6221879U JP 6221879 U JP6221879 U JP 6221879U JP S5839600 Y2 JPS5839600 Y2 JP S5839600Y2
Authority
JP
Japan
Prior art keywords
rom
rewritable
rewriting
rewritable rom
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6221879U
Other languages
English (en)
Japanese (ja)
Other versions
JPS55165499U (enrdf_load_stackoverflow
Inventor
正 小沢
友春 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP6221879U priority Critical patent/JPS5839600Y2/ja
Publication of JPS55165499U publication Critical patent/JPS55165499U/ja
Application granted granted Critical
Publication of JPS5839600Y2 publication Critical patent/JPS5839600Y2/ja
Expired legal-status Critical Current

Links

JP6221879U 1979-05-10 1979-05-10 書き替え可能rom Expired JPS5839600Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6221879U JPS5839600Y2 (ja) 1979-05-10 1979-05-10 書き替え可能rom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6221879U JPS5839600Y2 (ja) 1979-05-10 1979-05-10 書き替え可能rom

Publications (2)

Publication Number Publication Date
JPS55165499U JPS55165499U (enrdf_load_stackoverflow) 1980-11-28
JPS5839600Y2 true JPS5839600Y2 (ja) 1983-09-06

Family

ID=29296216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6221879U Expired JPS5839600Y2 (ja) 1979-05-10 1979-05-10 書き替え可能rom

Country Status (1)

Country Link
JP (1) JPS5839600Y2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671885A (en) * 1979-11-15 1981-06-15 Nec Corp Semiconductor memory
JP2687877B2 (ja) * 1994-05-26 1997-12-08 日本電気株式会社 表示機能付きeprom

Also Published As

Publication number Publication date
JPS55165499U (enrdf_load_stackoverflow) 1980-11-28

Similar Documents

Publication Publication Date Title
JP5281599B2 (ja) 電荷捕捉型誘電体メモリデバイスにプログラミングを行う方法およびその方法でプログラムされた電荷捕捉型誘電体メモリデバイス
US6535419B2 (en) Mixed mode multi-level indicator
US6219276B1 (en) Multilevel cell programming
JP3448051B2 (ja) 不揮発性半導体記憶装置
US6026026A (en) Self-convergence of post-erase threshold voltages in a flash memory cell using transient response
US8964467B1 (en) Systems and methods for partial page programming of multi level cells
US20060227618A1 (en) Program-verify method of non-volatile memory device
KR20100015423A (ko) 플래시 메모리용 부분 블록 소거 구조
EP0083194A3 (en) Electrically erasable programmable read only memory cell having a single transistor
JP2004014043A (ja) 不揮発性半導体メモリ
US9342401B2 (en) Selective in-situ retouching of data in nonvolatile memory
WO2007030399A3 (en) Method and apparatus for programming/erasing a non-volatile memory
JPS6324429A (ja) 電気的にプログラム可能なromの機密保護装置
JPS5839600Y2 (ja) 書き替え可能rom
EP0108681A3 (en) Bit erasable electrically erasable programmable read only memory
CN1453795A (zh) 使用指针来更新非挥发性内存的系统与方法
US5517453A (en) Memory with multiple erase modes
US9047974B2 (en) Erased state reading
KR100614066B1 (ko) 불휘발성 반도체 기억 장치
KR20090048102A (ko) 불휘발성 메모리 장치의 소프트 프로그램 방법과 검증/독출방법
EP1688959B1 (en) Method for programming a memory device suitable to minimize the lateral coupling effects between memory cells
EP0139185A2 (en) A high speed memory device and a method therefor
JPH046698A (ja) 不揮発性半導体記憶装置
JP3576686B2 (ja) 不揮発性半導体記憶装置
JP3010632B2 (ja) 電気的に消去及び書込み可能な不揮発性メモリー