JPS5834935A - Method for bonding - Google Patents
Method for bondingInfo
- Publication number
- JPS5834935A JPS5834935A JP56133194A JP13319481A JPS5834935A JP S5834935 A JPS5834935 A JP S5834935A JP 56133194 A JP56133194 A JP 56133194A JP 13319481 A JP13319481 A JP 13319481A JP S5834935 A JPS5834935 A JP S5834935A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- capillary
- bonding
- upper clamp
- clamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
この発−は半導体ベレットのボンディングにおいて、今
ヤピツリーの下方のワイヤに繰少出し発生を防止するＩ
ンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION This invention is used to prevent under-feeding of the wire below the wire tree in the bonding of semiconductor pellets.
Regarding the landing method.
半導体ＯＩＩ造には第１図に示すようなボンディング装
置を用いてペレツト１とり−ド７Ｖ−ム２とをワイヤ九
とえば金線Ｉでボンディングする工程が必要とされてい
ゐ。The production of semiconductor OII requires a step of bonding pellet 1 to layer 7 with wire 9, for example, gold wire I, using a bonding apparatus as shown in FIG.
すなわち、装置本体４０上部には金線３を繰）出す九め
のスプールからなるワイヤ繰り出し部５が設けられてい
る・このワイヤ繰シ出し部５の下方には金線Ｓが自然に
繰シ出されないようにクランプするためのスプール下ク
ランプ６が設けられてちる。このスプール下クランプ６
の下方には弾力性を有する板ばねからなり先端部が円弧
状に折重され友ガイド榎１が本体４に支持され、金ＩＩ
Ｈをガイドするようになっている。ガイド板１の先端部
下方には上り２ンプ８が本体４０側壁に支持され、図示
しないクランプ機構によ〉矢印のように開閉し金線Ｓを
り２ンプし九〉解放したシすることができるようになう
ている。上クツｙプ１０下方には下クランプＩとキャビ
ツリー１ｇとが基端部において連結され九支持アーム＃
ａおよびＪ＃ａＫよりて支持されるとともに、本体４０
内部に設けられた図示しないカムによ〉駆動され回転軸
１１を中心として揺動し下クランプ９とキャピラリー１
０とがそれぞれ上下動するように表っている。That is, a wire feeding section 5 consisting of a ninth spool from which the gold wire 3 is fed is provided at the top of the device main body 40. Below this wire feeding section 5, the gold wire S is naturally fed out. A lower spool clamp 6 is provided to clamp the spool to prevent it from coming out. This spool lower clamp 6
The lower part is made of a leaf spring having elasticity, the tip part is folded in an arc shape, and the friend guide Enoki 1 is supported by the main body 4, and the gold II
It is designed to guide H. An ascending pump 8 is supported by the side wall of the main body 40 below the tip of the guide plate 1, and can be opened and closed as shown by the arrows to push the gold wire S and release it. I'm starting to be able to do it. Below the upper clamp 10, a lower clamp I and a cavity tree 1g are connected at the base end, and a support arm #9 is connected at the base end.
a and J#aK, and the main body 40
The lower clamp 9 and capillary 1 are driven by an internally provided cam (not shown) and oscillate about the rotating shaft 11.
0 and 0 are shown moving up and down, respectively.
ｉ九、上記キャビ２リー１０の側方には金線３を加熱し
球状の金ボール１２を成形するためのトーチ１ｊが本体
１に支持されている。上記のように構成されたボンディ
ング装置を作動させてベレット１とリードフレーム２と
の間に金線３を圧着する場合には、カムが第２図に示す
ように一回転する間に下クランプ９およびキャピラリー
１０は２回下降および上昇する。第１回目の下降におい
てキャビラＩＪ −１０の先端に密着する金ボール１２
をベレット１に圧着したのち、下クランプ９およびキャ
ピラリー１０はふたたび上昇し、同時にベレット１およ
びリードフレーム２は横方向に移動する。しかして、金
ボール１２をベレット１にボンディングした直後にそれ
まで第３図に示すように閉状態Ａで金線３をクランプし
ていた上クランプ８は開状態Ｂとなシ、１サイクルの終
了直前まで金線３を解放し良状態で推移する。一方、金
ボール１２をベレット１にボンディングしたのち、下ク
ランプ９およびキャピラリー１０はぶたたび上昇し、前
記のようにベレット１とリードフレーム２とが横方向に
移動完了後ふたたび降下する。i9. A torch 1j for heating the gold wire 3 to form a spherical gold ball 12 is supported by the main body 1 on the side of the cavity 2 10. When crimping the gold wire 3 between the pellet 1 and the lead frame 2 by operating the bonding device configured as described above, the lower clamp 9 is pressed while the cam rotates once as shown in FIG. And the capillary 10 is lowered and raised twice. Gold ball 12 in close contact with the tip of cabilla IJ-10 during the first descent
After crimping the lead frame 1 to the pellet 1, the lower clamp 9 and the capillary 10 rise again, and at the same time the pellet 1 and the lead frame 2 move laterally. Immediately after bonding the gold ball 12 to the pellet 1, the upper clamp 8, which had been clamping the gold wire 3 in the closed state A as shown in FIG. 3, changes to the open state B, and one cycle ends. Gold wire 3 was released and remained in good condition until just before. On the other hand, after bonding the gold ball 12 to the pellet 1, the lower clamp 9 and the capillary 10 rise again, and after the pellet 1 and lead frame 2 complete their lateral movement as described above, they descend again.
しかるに、この場合、金線３は上クランプ８でクランプ
されていないため、キャピラリー１゜の下端部との接触
摩擦等の影響を受け、キャピラリー１０の主部の金線３
の長さがばらつき、ボジシ、ン（６）および（７）に破
線で示すようなたるみが発生し、ボンディング作業の歩
留りを低下させる原因となっていた。However, in this case, since the gold wire 3 is not clamped by the upper clamp 8, it is affected by contact friction with the lower end of the capillary 1°, and the gold wire 3 of the main part of the capillary 10 is
As a result, the lengths of the bonding holes (6) and (7) are varied, causing sagging as shown by broken lines in the bonding holes (6) and (7), which causes a decrease in the yield of bonding work.
この発明は上記の事情を考慮してなされたもので、その
目的とするところは、ボンディング後キャピラリーがふ
たたび降下する際にワイヤを上クランプによりクランプ
させることにより、ワイヤの過剰な繰り出しを防止し、
歩留りを向上させることができるボンディング方法を提
供しようとするものである。This invention was made in consideration of the above circumstances, and its purpose is to prevent excessive feeding of the wire by clamping the wire with the upper clamp when the capillary descends again after bonding.
The present invention aims to provide a bonding method that can improve yield.
以下、この発明の一実施例を添付図面を参照して説明す
る。第１図のように構成されたボンディング装置におい
て、上クランプ８は第５図のタイミングチャートに示す
ように第４図に示すカム線図の＠−＋ｄまでは閉状態Ａ
、ｄ−＋ｇまでは開状態Ｂ１ついでｇ−＋ ｈｉでは閉
状態蕗となるようになりていて、１サイクル中に２回開
閉するようになりている。An embodiment of the present invention will be described below with reference to the accompanying drawings. In the bonding apparatus configured as shown in FIG. 1, the upper clamp 8 is in the closed state A until @-+d of the cam diagram shown in FIG. 4, as shown in the timing chart of FIG.
, up to d-+g, it is in the open state B1, and at g-+hi, it is in the closed state, so that it opens and closes twice in one cycle.
上記のように構成されたボンディング装置を作動させる
と、カムがａからｋに移動するにつれ、ワイヤたとえば
金線３はスプール下り２ンプ６によシ常に軽くクランプ
されてたるみを生じないように繰シ出されながら（１）
から（９）の各ボジシ冒ンのように動作し、一連の動作
が終了し、トーチ１３によシ金ボール１２が形成され、
つぎのサイクルが開始しベレット１上に金ボール１２が
ボンディングされる。この間、ボジシ、ン＜Ｓ＞におい
てベレット１上に金ボール１２がボンディングされると
、それまで閉状態人だった上クランプ８は開状態Ｂとな
シ、キャピラリー１０および下クランプ９が降下開始直
前にふたたび閉状態Ａとなりて金線Ｓをクランプし、中
ヤピラリ−１０の先端がリードフレーム２に当接する直
前にふたたび開状態になり、キャピラリー１０がふたた
び上昇し、終点直前にはふたたび閉状態ムとなＣ）−チ
ＩＳに加熱されて金ボール１２が形成され１サイクルを
完了する。When the bonding device configured as described above is operated, as the cam moves from a to k, the wire, for example, the gold wire 3, is constantly lightly clamped by the spool descending pump 6 and repeated so as not to cause any slack. While being ejected (1)
Each position from (9) operates as shown in FIG.
The next cycle begins and the gold ball 12 is bonded onto the pellet 1. During this time, when the gold ball 12 is bonded onto the pellet 1 at the position <S>, the upper clamp 8, which had been in the closed state until then, becomes the open state B, and the capillary 10 and the lower clamp 9 are moved just before starting to descend. The capillary 10 returns to the closed state A and clamps the gold wire S. Just before the tip of the middle capillary 10 contacts the lead frame 2, the capillary 10 returns to the open state, and the capillary 10 rises again. C)-CH is heated to form a gold ball 12, completing one cycle.
上記のように、ベレット１上に金ボール１２がボンディ
ングされたのち、キャピラリー１０がふたたび上昇、下
降し、リードフレーム２に金線３をボンディングする際
には上クランプ８が閉状態となシ金線Ｓをクランプする
ようにしたので、キャビ’） ＩＪ −ｔ ｏと金線３
に摩擦抵抗があってもキャピラリー１０は金線３に沿っ
て自由に降下することができる。As described above, after the gold ball 12 is bonded onto the pellet 1, the capillary 10 rises and falls again, and when bonding the gold wire 3 to the lead frame 2, the upper clamp 8 must be in the closed state. Since the wire S was clamped, the cab') IJ -t o and the gold wire 3
Even if there is frictional resistance, the capillary 10 can freely descend along the gold wire 3.
以上説明したように、との発明においてはｌサイクル中
に２回昇降するキャビ２リ−および下クランプに同調し
て３（ンディング後再びキャピラリーが下降してボンデ
ィングする際に上り２ンプを閉じてワイヤをクランプす
るようにしたので、キャピラリー下部のワイヤに過剰な
たるみが生じるのが防止されボンディング作業の歩留り
を向上させることができる。As explained above, in the invention, the capillary moves up and down twice in one cycle, synchronizing with the lower clamp, and closes the upper two clamps when the capillary descends again after bonding. Since the wire is clamped, excessive slack is prevented from forming in the wire at the bottom of the capillary, and the yield of bonding work can be improved.
第１図は一般のボンディング装置の側面図、第２図は従
来のボンディング装置のカムの１サイクル中における金
線の作動を示す説明図、第３図は同じ〈従来のボンディ
ング装置の上クランプの開閉タイミングを示す説明図、
第４図はこの発明の二実施例のカムの１サイクル中にお
ける金線の動作を示す説明図、第５図は同じくこの上ク
ランプの開閉タイミングを示す説明図である。
１・・・ペレット、２・・・リードフレーム、３・・・
金線（ワイヤ）、５・・・ワイヤ繰り出し部、８・・・
上クランプ、９・・・下り２ンプ、１０−・・キャピラ
リー。
出願人代理人 弁理士 鈴 江 武 彦才１ｆｇＪFig. 1 is a side view of a general bonding device, Fig. 2 is an explanatory diagram showing the operation of the gold wire during one cycle of the cam of the conventional bonding device, and Fig. 3 is the same (the upper clamp of the conventional bonding device). Explanatory diagram showing opening/closing timing,
FIG. 4 is an explanatory diagram showing the movement of the gold wire during one cycle of the cam according to the second embodiment of the present invention, and FIG. 5 is an explanatory diagram showing the opening/closing timing of the upper clamp. 1... Pellet, 2... Lead frame, 3...
Gold wire (wire), 5... Wire feeding part, 8...
Upper clamp, 9...2 downward clamps, 10-...capillary. Applicant's agent Patent attorney Hikosai Suzue Takeshi 1fgJ
Claims (1)
ランプした〉解放する上クランプの下方に上記ワイヤの
中途部をクランプしたシ解放するとともに上下動自在な
下クランプを設け、この下クランプの下方に上記ワイヤ
を挿通して上下動するキャビツリーを設けてボンディン
グする方法において、ボンディング１ナイクル中におけ
るキャビツリーＯ再下降時に上戸２ンプによりて−ワイ
ヤの中通部をクランプすることを特徴とするポンディン
ダ方法。The middle part of the wire fed out from the wire feeding part is clamped.The middle part of the wire is clamped below the upper clamp which is to be released.A lower clamp is provided which can move up and down as well as release the upper clamp. In the method of bonding by inserting the above-mentioned wire under the cavity tree and moving it up and down, the intermediate part of the wire is clamped by the upper door 2 pump when the cavity tree O is lowered again during the bonding cycle 1. Pondinda method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56133194A JPS5834935A (en) | 1981-08-25 | 1981-08-25 | Method for bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56133194A JPS5834935A (en) | 1981-08-25 | 1981-08-25 | Method for bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5834935A true JPS5834935A (en) | 1983-03-01 |
Family
ID=15098904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56133194A Pending JPS5834935A (en) | 1981-08-25 | 1981-08-25 | Method for bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834935A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61199643A (en) * | 1985-03-01 | 1986-09-04 | Matsushita Electric Ind Co Ltd | Wire bonder |
| JPS63140542A (en) * | 1986-12-02 | 1988-06-13 | Fujitsu Ltd | Probe card |
| JPH01201166A (en) * | 1988-02-05 | 1989-08-14 | Tokyo Kasoode Kenkyusho:Kk | Probe card |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5451476A (en) * | 1977-09-30 | 1979-04-23 | Shinkawa Seisakusho Kk | Device for bonding wires |
| JPS5466769A (en) * | 1977-11-08 | 1979-05-29 | Shinkawa Seisakusho Kk | Device for bonding wires |
| JPS57132335A (en) * | 1981-02-10 | 1982-08-16 | Sharp Corp | Wire bonding method |
-
1981
- 1981-08-25 JP JP56133194A patent/JPS5834935A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5451476A (en) * | 1977-09-30 | 1979-04-23 | Shinkawa Seisakusho Kk | Device for bonding wires |
| JPS5466769A (en) * | 1977-11-08 | 1979-05-29 | Shinkawa Seisakusho Kk | Device for bonding wires |
| JPS57132335A (en) * | 1981-02-10 | 1982-08-16 | Sharp Corp | Wire bonding method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61199643A (en) * | 1985-03-01 | 1986-09-04 | Matsushita Electric Ind Co Ltd | Wire bonder |
| JPH0458694B2 (en) * | 1985-03-01 | 1992-09-18 | Matsushita Electric Ind Co Ltd | |
| JPS63140542A (en) * | 1986-12-02 | 1988-06-13 | Fujitsu Ltd | Probe card |
| JPH01201166A (en) * | 1988-02-05 | 1989-08-14 | Tokyo Kasoode Kenkyusho:Kk | Probe card |
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