JP2000277558A - Wire bonding method and device - Google Patents

Wire bonding method and device

Info

Publication number
JP2000277558A
JP2000277558A JP11084338A JP8433899A JP2000277558A JP 2000277558 A JP2000277558 A JP 2000277558A JP 11084338 A JP11084338 A JP 11084338A JP 8433899 A JP8433899 A JP 8433899A JP 2000277558 A JP2000277558 A JP 2000277558A
Authority
JP
Japan
Prior art keywords
wire
bonding point
capillary
bonding
clamper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11084338A
Other languages
Japanese (ja)
Inventor
Yasuyoshi Yamanaka
康義 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP11084338A priority Critical patent/JP2000277558A/en
Publication of JP2000277558A publication Critical patent/JP2000277558A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/1015—Shape
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    • H01L2924/10162—Shape being a cuboid with a square active surface

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To control the height of a wire loop, with which the first bonding point and the second bonding point are connected, in a highly precise manner. SOLUTION: The closing of a clamper 5 is controlled in the suitable timing wherein a capillary 4 descends from the top ascending position of the first bonding point to the second bonding point describing a circular arc. As a result, the irregularity in the height of the loop form of the wire 3, which connects between the first bonding point and the second bonding point, can be suppressed by properly adjusting the amount of loosening of the wire 3 in the capillary 4, and the height of a wire loop can be controlled in a highly precise manner.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ方法及び装置に係り、特に第１ボンディング点と第２
ボンディング点との間を接続するワイヤループの形状の
制御に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method and apparatus, and more particularly, to a first bonding point and a second bonding point.
The present invention relates to control of the shape of a wire loop connected to a bonding point.

【０００２】[0002]

【従来の技術】従来より、ＩＣ等の半導体装置の製造工
程には、ワイヤボンディング工程がある。この工程によ
り、図３に示すようにペレット１のパッド１ａとリード
フレーム２のリード２ａとの間にワイヤ３が接続され
る。図４は上記したパッド１ａ（第１ボンディング点
Ａ）とリード２ａ（第２ボンディング点Ｅ）を接続した
ワイヤ３のループ形状を示している。2. Description of the Related Art Conventionally, a process of manufacturing a semiconductor device such as an IC includes a wire bonding process. By this step, the wire 3 is connected between the pad 1a of the pellet 1 and the lead 2a of the lead frame 2, as shown in FIG. FIG. 4 shows a loop shape of the wire 3 connecting the pad 1a (first bonding point A) and the lead 2a (second bonding point E).

【０００３】図５は上記したワイヤループによりパッド
１ａ（第１ボンディングＡ点）とリード２ａ（第２ボン
ディングＥ点）をワイヤで接続するワイヤボンディング
方法を示した図である。FIG. 5 is a diagram showing a wire bonding method for connecting a pad 1a (first bonding point A) and a lead 2a (second bonding point E) with a wire by the above-described wire loop.

【０００４】図５（ａ）に示すように、ワイヤ３をクラ
ンプするクランパ（図示せず）は開状態で、キャピラリ
４が下降して第１ボンディング点Ａにワイヤ先端に形成
されたボールをボンディングした後、キャピラリ４はＢ
点まで上昇してワイヤ３を繰り出す。[0005] As shown in FIG. 5 (a), a clamper (not shown) for clamping the wire 3 is opened, and the capillary 4 is lowered to bond the ball formed at the wire tip to the first bonding point A. After that, the capillary 4 becomes B
The wire 3 is raised to the point and the wire 3 is paid out.

【０００５】次に図５（ｂ）に示すように、キャピラリ
４を第２ボンディング点Ｅと反対方向にＣ点まで水平移
動させる。一般に、キャピラリ４を第２ボンディング点
Ｅと反対方向に移動させるループ形成動作のことをリバ
ース動作という。Next, as shown in FIG. 5B, the capillary 4 is horizontally moved to a point C in a direction opposite to the second bonding point E. Generally, a loop forming operation for moving the capillary 4 in a direction opposite to the second bonding point E is called a reverse operation.

【０００６】この動作により、ワイヤ３はＡ点からＣ点
までの間を結ぶ傾斜した形状となり、ワイヤ部分に癖３
ａが付く。このＡ点からＣ点までの工程で繰り出された
ワイヤ３は、図４に示すループのネック高さ部３１とな
る。[0006] By this operation, the wire 3 has an inclined shape connecting the points A to C, and the wire 3 has a habit 3
a is attached. The wire 3 fed out in the process from the point A to the point C becomes the neck height portion 31 of the loop shown in FIG.

【０００７】次に図５（ｃ）に示すように、キャピラリ
４はＤ点（最上昇位置）まで上昇して図４に示す傾斜部
３３分だけワイヤ３を繰り出す。このキャピラリがＤ点
（最上昇位置）に達すると、クランパ（図示せず）が閉
じる。Next, as shown in FIG. 5C, the capillary 4 ascends to the point D (the highest position) and pays out the wire 3 by the inclined portion 33 shown in FIG. When the capillary reaches point D (the highest position), a clamper (not shown) closes.

【０００８】次に図５（ｄ）、（ｅ）に示すように、キ
ャピラリ４は上記Ｄ点（最上昇位置）から円弧運動又は
円弧運動後に下降して第２ボンディング点Ｅに位置し、
ワイヤ３をボンディングする。Next, as shown in FIGS. 5 (d) and 5 (e), the capillary 4 descends from the point D (the highest position) after the circular movement or after the circular movement, and is located at the second bonding point E.
The wire 3 is bonded.

【０００９】[0009]

【発明が解決しようとする課題】ところで、上記のよう
な従来のワイヤボンディング方法では、ワイヤのループ
形状に影響を与える要因として、キャピラリの移動軌
跡、キャピラリの移動速度、ワイヤの径などがあり、第
１ボンディング後のキャピラリ４を上昇させてキャピラ
リ４の下端からワイヤ３を繰り出す時、図６に示すよう
にキャピラリ４の中に位置するワイヤ３に弛みが生じ、
それを常に均一に保つことは困難である。In the conventional wire bonding method as described above, factors affecting the loop shape of the wire include a moving locus of the capillary, a moving speed of the capillary, and a diameter of the wire. When raising the capillary 4 after the first bonding to draw out the wire 3 from the lower end of the capillary 4, the wire 3 located in the capillary 4 is slackened as shown in FIG.
It is difficult to keep it uniform at all times.

【００１０】例えば、キャピラリ４が単に真上に上昇す
る場合であっても、キャピラリの上昇速度や、ワイヤ径
の違いによって、繰り出されるワイヤ３に生じる弛み具
合（弛み量）は微妙に変化する。この弛み量の微妙な変
化が、形成されるワイヤループの形状に影響を及ぼす。For example, even when the capillary 4 simply rises directly above, the degree of slack (the amount of slack) that occurs in the wire 3 that is drawn out changes subtly depending on the rising speed of the capillary and the difference in the wire diameter. This subtle change in the amount of slack affects the shape of the formed wire loop.

【００１１】即ち、所定のキャピラリ４の移動軌跡、移
動速度、ワイヤ径で、クランパを開状態ままワイヤボン
ディングを行なった時に、良好なワイヤループが形成で
きたとしても、例えば、キャピラリ４の移動速度が変更
された場合、他の条件が同じであっても良好なワイヤル
ープが形成できない（ワイヤの弛みやツッパリが生じ
る）ことがある。これは、キャピラリ４の上昇時に、出
されたワイヤ３の弛み量の違いに起因する。That is, even if a good wire loop can be formed when wire bonding is performed with the clamper opened with a predetermined moving locus, moving speed, and wire diameter of the capillary 4, for example, the moving speed of the capillary 4 Is changed, a good wire loop cannot be formed even if other conditions are the same (slack of the wire or tangling occurs). This is due to the difference in the amount of slack of the wire 3 that is output when the capillary 4 is lifted.

【００１２】これにより、図７に示すようにワイヤルー
プの形状、例えば高さにバラツキが生じる。近年、半導
体の微細加工技術の進展によって、製造される半導体装
置が小型化され、それに従って、上記したペレット１の
パッド１ａとリードフレーム２のリード２ａを接続する
ワイヤループの高さにそれなりの精度が要求されるよう
になり、上記したバラツキがあると、上記したワイヤル
ープが仕様を満足しなくなるという問題が生じてきた。As a result, the shape, for example, the height of the wire loop varies as shown in FIG. 2. Description of the Related Art In recent years, a semiconductor device to be manufactured has been miniaturized due to the progress of semiconductor microfabrication technology, and accordingly, the accuracy of the height of a wire loop connecting the pad 1a of the pellet 1 and the lead 2a of the lead frame 2 has been improved. Is required, and the above-mentioned variation causes a problem that the above-mentioned wire loop does not satisfy the specification.

【００１３】本発明は、上述の如き従来の課題を解決す
るためになされたもので、その目的は、第１ボンディン
グ点と第２ボンディング点を接続するワイヤのループの
形状を精度良く制御することができるワイヤボンディン
グ方法及び装置を提供することである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to accurately control the shape of a loop of a wire connecting a first bonding point and a second bonding point. To provide a wire bonding method and apparatus capable of performing the above.

【００１４】[0014]

【課題を解決するための手段】上記目的を達成するため
に、請求項１の発明の特徴は、第１ボンディング点と第
２ボンディング点間をキャピラリから繰り出されるワイ
ヤで接続するワイヤボンディング方法において、前記第
１ボンディング点に前記ワイヤをボンディングした後、
前記キャピラリが前記第１ボンディング点の上方の最上
昇位置から前記第２ボンディング点に下降する間に、前
記キャピラリ内のワイヤの弛みを調整することにある。According to a first aspect of the present invention, there is provided a wire bonding method for connecting a first bonding point and a second bonding point with a wire drawn from a capillary. After bonding the wire to the first bonding point,
While the capillary descends from the highest position above the first bonding point to the second bonding point, the slack of the wire in the capillary is adjusted.

【００１５】請求項２の発明の特徴は、第１ボンディン
グ点と第２ボンディング点間をキャピラリから繰り出さ
れるワイヤで接続するワイヤボンディング方法におい
て、前記第１ボンディング点に前記ワイヤをボンディン
グした後、前記キャピラリが前記第１ボンディング点の
上方の最上昇位置から前記第２ボンディング点に下降す
る間の所定の位置でクランパを閉じて前記ワイヤをクラ
ンプすることにある。According to a second aspect of the present invention, there is provided a wire bonding method for connecting a first bonding point and a second bonding point with a wire drawn out of a capillary, the method comprising: bonding the wire to the first bonding point; The clamp is closed at a predetermined position while the capillary descends from the highest position above the first bonding point to the second bonding point to clamp the wire.

【００１６】請求項３の発明の前記クランパを閉じる所
定の位置は、前記キャピラリの移動軌跡、前記キャピラ
リの移動速度及びワイヤ径の中の少なくとも１個以上の
条件の変化により異なる。The predetermined position at which the clamper is closed according to the third aspect of the present invention differs depending on a change in at least one of the moving path of the capillary, the moving speed of the capillary, and the wire diameter.

【００１７】請求項４の発明の前記所定の位置は、前記
キャピラリが前記第１ボンディング点の上方の最上昇位
置から前記第２ボンディング点に下降する間の任意の位
置で前記クランパを閉じて前記ワイヤをクランプした場
合に、前記第１ボンディング点と前記第２ボンディング
点間を接続するワイヤループの高さに最もバラツキが小
さい位置である。According to a fourth aspect of the present invention, the predetermined position is such that the clamper is closed at an arbitrary position while the capillary descends from the highest position above the first bonding point to the second bonding point. When the wire is clamped, this is a position where the height of a wire loop connecting between the first bonding point and the second bonding point has the smallest variation.

【００１８】請求項５の発明の特徴は、第１ボンディン
グ点と第２ボンディング点間をキャピラリから繰り出さ
れるワイヤで接続するワイヤボンディング装置におい
て、前記第１ボンディング点に前記ワイヤをボンディン
グした後、前記キャピラリが前記第１ボンディング点の
上方の最上昇位置から前記第２ボンディング点に下降す
る間に、前記キャピラリ内のワイヤの弛みを調整する手
段を具備することにある。According to a fifth aspect of the present invention, there is provided a wire bonding apparatus for connecting a first bonding point and a second bonding point with a wire drawn out of a capillary, after bonding the wire to the first bonding point, Means are provided for adjusting the slack of the wire in the capillary while the capillary descends from the highest position above the first bonding point to the second bonding point.

【００１９】請求項６の発明の特徴は、第１ボンディン
グ点と第２ボンディング点間をキャピラリから繰り出さ
れるワイヤで接続するワイヤボンディング装置におい
て、前記第１ボンディング点に前記ワイヤをボンディン
グした後、前記キャピラリが前記第１ボンディング点の
上方の最上昇位置から前記第２ボンディング点に下降す
る際に、前記キャピラリの位置を検出する手段と、前記
キャピラリの位置が所定の位置であることが検出される
と、前記クランパを閉じて前記ワイヤをクランプする手
段とを具備することにある。According to a sixth aspect of the present invention, there is provided a wire bonding apparatus for connecting a first bonding point and a second bonding point with a wire drawn out of a capillary, after bonding the wire to the first bonding point. Means for detecting the position of the capillary when the capillary descends from the highest position above the first bonding point to the second bonding point; and detecting that the position of the capillary is a predetermined position. And means for closing the clamper to clamp the wire.

【００２０】請求項７の発明の前記クランパを閉じる所
定の位置は、前記キャピラリの移動軌跡、前記キャピラ
リの移動速度及びワイヤ径の中の少なくとも１個以上の
条件の変化により異なる。[0020] The predetermined position for closing the clamper according to the invention of claim 7 differs depending on a change in at least one of the moving trajectory of the capillary, the moving speed of the capillary, and the wire diameter.

【００２１】請求項８の発明の前記所定の位置は、前記
キャピラリが前記第１ボンディングの点の上方の最上昇
位置から前記第２ボンディング点に下降する間にある第
１の位置でクランパを閉じた場合と、第２の位置で前記
クランパを閉じた場合の前記ワイヤループの高さのバラ
ツキを比較し、よりバラツキの小さい方の位置を選択
し、この選択した位置で前記クランパを閉じた場合と、
第３の位置でクランパを閉じた場合の前記ワイヤループ
の高さのバラツキを比較し、よりバラツキの小さい方の
位置を選択することを繰り返すことによって、決定す
る。The predetermined position of the invention according to claim 8 is that the clamper is closed at a first position while the capillary is descending from the highest position above the first bonding point to the second bonding point. And comparing the variation of the height of the wire loop when the clamper is closed at the second position, selecting a position with smaller variation, and closing the clamper at the selected position. When,
The variation is determined by comparing the variation in the height of the wire loop when the clamper is closed at the third position, and repeatedly selecting a position having a smaller variation.

【００２２】[0022]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図１は、本発明のワイヤボンディ
ング方法の一実施の形態を示した説明図である。図１
（ａ）に示すように、ワイヤ３をクランプするクランパ
５は開状態で、キャピラリ４が下降して第１ボンディン
グ点Ａにトーチ棒（図示せず）との間での放電によって
ワイヤ３の先端に形成されたボールをボンディングした
後、キャピラリ４はＢ点まで上昇してワイヤ３を繰り出
す。次に図１（ｂ）に示すように、キャピラリ４を第２
ボンディング点Ｅと反対方向にＣ点まで水平移動させ
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram showing one embodiment of the wire bonding method of the present invention. FIG.
As shown in (a), the clamper 5 for clamping the wire 3 is in an open state, the capillary 4 is lowered, and the tip of the wire 3 is discharged to a first bonding point A by a discharge between the first bonding point A and a torch bar (not shown). After bonding the ball formed in the step (b), the capillary 4 moves up to the point B and pays out the wire 3. Next, as shown in FIG.
It is moved horizontally to the point C in the direction opposite to the bonding point E.

【００２３】この動作により、ワイヤ３はＡ点からＣ点
までの間を結ぶ傾斜した形状となり、ワイヤ部分に癖３
ａが付く。By this operation, the wire 3 has an inclined shape connecting the points A to C, and the wire 3 has a habit 3
a is attached.

【００２４】次に図１（ｃ）に示すように、キャピラリ
４はＤ点（最上昇位置）まで上昇してワイヤ３を繰り出
す。Next, as shown in FIG. 1 (c), the capillary 4 is raised to the point D (the highest position), and the wire 3 is paid out.

【００２５】図１（ｄ）は図１（ｃ）で示した動作の次
のキャピラリ４及びクランパ５の動作を示した図であ
る。キャピラリ４は円弧運動又は円弧運動後に下降して
第２ボンディング点Ｅに位置し、ワイヤ３をボンディン
グする。その際、キャピラリ４が第１ボンディングＡの
上方の最上昇位置Ｄから第２ボンディング点Ｅへ下降す
るまでの間の適当なタイミングでクランパ５を閉じるよ
うな制御を行う。この例では、キャピラリ４の最上昇位
置を１００％とすると、７５％の位置でクランパ５を閉
じて、ワイヤ３をクランプする。FIG. 1D is a diagram showing the operation of the capillary 4 and the clamper 5 subsequent to the operation shown in FIG. 1C. The capillary 4 descends after the circular movement or the circular movement, and is located at the second bonding point E to bond the wire 3. At this time, control is performed to close the clamper 5 at an appropriate timing until the capillary 4 descends from the highest position D above the first bonding A to the second bonding point E. In this example, assuming that the highest position of the capillary 4 is 100%, the clamper 5 is closed at the 75% position to clamp the wire 3.

【００２６】その後、キャピラリ４がサーチレベルまで
下降すると、クランパ５を開くとともに、キャピラリ４
の下降速度をサーチ速度に切り換え、第２ボンディング
点Ｅにワイヤ３をボンディングする。但し、サーチレベ
ルの開始点が最上昇位置１００％に対する約０％の位置
とする。Thereafter, when the capillary 4 lowers to the search level, the clamper 5 is opened and the capillary 4 is opened.
Is switched to the search speed, and the wire 3 is bonded to the second bonding point E. However, the start point of the search level is a position of about 0% with respect to the highest position of 100%.

【００２７】上記キャピラリ４の下降中における上記ク
ランパ５を閉じる位置（タイミング）は、例えば実験に
より決定される。設定されたキャピラリ４の動作条件
（即ち移動軌跡、移動速度Ｖ１）、およびワイヤ径ｄ１
において、クランパ５を閉じるタイミングを可変させ、
最良のワイヤループ（形状にバラツキが小さいワイヤル
ープ）が得られるタイミングを、その条件におけるクラ
ンパ５の閉じタイミングとして決定する。The position (timing) at which the clamper 5 is closed while the capillary 4 is moving down is determined, for example, by experiments. The set operating conditions of the capillary 4 (ie, the moving trajectory, the moving speed V1), and the wire diameter d1
, The timing of closing the clamper 5 is varied,
The timing at which the best wire loop (a wire loop with a small variation in shape) is obtained is determined as the closing timing of the clamper 5 under the condition.

【００２８】すなわち、キャピラリ４の第１ボンディン
グ点Ａの上方の最上昇位置Ｄを１００％、第２ボンディ
ング点Ｅの位置（正確にはサーチレベルＳの開始点）を
０％とし、クランパを閉じるタイミングを１００％から
０％の間で制御する。That is, the highest position D above the first bonding point A of the capillary 4 is set to 100%, and the position of the second bonding point E (precisely, the start point of the search level S) is set to 0%, and the clamper is closed. The timing is controlled between 100% and 0%.

【００２９】具体的には、クランパ５を最上昇位置（１
００％）で閉じた場合と、全く閉じなかった場合とでワ
イヤループを形成し、どちらが良好なワイヤループが形
成できるかを比較する。Specifically, the clamper 5 is moved to the highest position (1
(00%) and a case where the wire loop is not closed at all, a wire loop is formed, and a comparison is made as to which one can form a better wire loop.

【００３０】その結果、１００％でクランパ５を閉じた
方が良かった場合、今度は５０％の位置でクランパ５を
閉じた時のワイヤループと前記１００％でクランパ５を
閉じた場合とを比較する。この結果、１００％の方がよ
い場合、更に７５％の位置でクランパを閉じた場合とを
比較するといった具合に試行し、クランパ５を閉じる最
適の位置（タイミング）を探し出す。そして、最良のワ
イヤループが得られるクランパ５の閉じ位置（％）をそ
の条件でのクランパ５の閉じタイミングとする。その様
にして形成されたワイヤループの形状を図２（ａ）に示
す。As a result, when it is better to close the clamper 5 at 100%, the wire loop when the clamper 5 is closed at the 50% position is compared with the case where the clamper 5 is closed at 100%. I do. As a result, if 100% is better, an attempt is made to compare it with the case where the clamper is closed at a further 75% position, and the optimum position (timing) for closing the clamper 5 is found. Then, the closing position (%) of the clamper 5 at which the best wire loop is obtained is set as the closing timing of the clamper 5 under the condition. FIG. 2A shows the shape of the wire loop thus formed.

【００３１】本実施の形態によれば、第１ボンディング
点Ａと第２ボンディング点Ｅをキャピラリ４より繰り出
されるワイヤ３により接続する際に、キャピラリ４が第
１ボンディング点Ａの上方の最上昇位置Ｄから第２ボン
ディング点Ｅへ円弧を描いて下降するまでの間の適切な
タイミングでクランパ５を閉じる制御を行うことによ
り、第１ボンディング点Ａと第２ボンディング点Ｅとを
接続するワイヤループの形状、例えば高さのバラツキを
抑えることができ、この高さの仕様が厳しい場合も、仕
様を満足するワイヤループ形状を安定に得ることができ
る。According to the present embodiment, when the first bonding point A and the second bonding point E are connected by the wire 3 drawn out from the capillary 4, the capillary 4 is moved to the highest position above the first bonding point A. By performing control to close the clamper 5 at an appropriate timing during a period from drawing D to a second bonding point E while drawing an arc, a wire loop connecting the first bonding point A and the second bonding point E is formed. Variations in shape, for example, height, can be suppressed, and even when the specification of this height is severe, a wire loop shape satisfying the specification can be obtained stably.

【００３２】尚、第１ボンディング点Ａと第２ボンディ
ング点Ｅを接続するワイヤ３のループ形状は上述した様
な３角形状（図２（ａ）参照）に限らず、例えば図２
（ｂ）に示した台形をしたものにも本発明を適用して同
様の効果を得ることができる。又、上記実施の形態のワ
イヤの材料は金の他に銅などの金属材料が用いられる。The loop shape of the wire 3 connecting the first bonding point A and the second bonding point E is not limited to the above-described triangular shape (see FIG. 2A).
The same effect can be obtained by applying the present invention to a trapezoidal shape shown in FIG. In addition, as the material of the wire of the above embodiment, a metal material such as copper is used in addition to gold.

【００３３】[0033]

【発明の効果】以上詳細に説明したように、本発明のワ
イヤボンディング方法及び装置によれば、第１ボンディ
ングの点の上方の最上昇位置から第２ボンディング点へ
下降するまでの間の適切位置で、クランパ５を閉じる制
御を行うことにより、前記第１ボンディング点と前記第
２ボンディング点を接続するワイヤのループ形状を精度
良く制御することができる。As described above in detail, according to the wire bonding method and apparatus of the present invention, an appropriate position between the highest position above the first bonding point and the lowering position to the second bonding point. By controlling the closing of the clamper 5, the loop shape of the wire connecting the first bonding point and the second bonding point can be accurately controlled.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明のワイヤボンディング方法の一実施の形
態を示した説明図である。FIG. 1 is an explanatory diagram showing one embodiment of a wire bonding method of the present invention.

【図２】パッドとリードを接続するワイヤループの形状
を示した図である。FIG. 2 is a diagram showing a shape of a wire loop connecting a pad and a lead.

【図３】ワイヤボンディングされたペレットの一例を示
した詳細図である。FIG. 3 is a detailed view showing an example of pellets subjected to wire bonding.

【図４】パッドとリードを接続するワイヤループの形状
を示した図である。FIG. 4 is a diagram showing a shape of a wire loop connecting a pad and a lead.

【図５】従来のワイヤボンディング方法を説明する図で
ある。FIG. 5 is a diagram illustrating a conventional wire bonding method.

【図６】キャピラリ内のワイヤの弛み例を示した図であ
る。FIG. 6 is a diagram showing an example of loosening of a wire in a capillary.

【図７】第１ボンディング点と第２ボンディング点を接
続するワイヤループの高さ形状のバラツキを示した図で
ある。FIG. 7 is a diagram showing a variation in the height shape of a wire loop connecting a first bonding point and a second bonding point.

【符号の説明】 １ ペレット １ａ パッド ２ リードフレーム ２ａ リード ３ ワイヤ ４ キャピラリ ５ クランパ[Description of Signs] 1 pellet 1a pad 2 lead frame 2a lead 3 wire 4 capillary 5 clamper

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】 第１ボンディング点と第２ボンディング
点間をキャピラリから繰り出されるワイヤで接続するワ
イヤボンディング方法において、 前記第１ボンディング点に前記ワイヤをボンディングし
た後、前記キャピラリが前記第１ボンディング点の上方
の最上昇位置から前記第２ボンディング点に下降する間
に、前記キャピラリ内のワイヤの弛みを調整することを
特徴とするワイヤボンディング方法。1. A wire bonding method for connecting a first bonding point and a second bonding point with a wire drawn from a capillary, wherein after bonding the wire to the first bonding point, the capillary is connected to the first bonding point. Adjusting the slack of the wire in the capillary while descending from the highest position above to the second bonding point. 【請求項２】 第１ボンディング点と第２ボンディング
点間をキャピラリから繰り出されるワイヤで接続するワ
イヤボンディング方法において、 前記第１ボンディング点に前記ワイヤをボンディングし
た後、前記キャピラリが前記第１ボンディング点の上方
の最上昇位置から前記第２ボンディング点に下降する間
の所定の位置でクランパを閉じて前記ワイヤをクランプ
することを特徴とするワイヤボンディング方法。2. A wire bonding method for connecting a first bonding point and a second bonding point with a wire drawn from a capillary, wherein after bonding the wire to the first bonding point, the capillary is connected to the first bonding point. And clamping the wire by closing a clamper at a predetermined position while descending from the highest position above the second bonding point to the second bonding point. 【請求項３】 前記クランパを閉じる所定の位置は、前
記キャピラリの移動軌跡、前記キャピラリの移動速度及
びワイヤ径の中の少なくとも１個以上の条件の変化によ
り異なることを特徴とする請求項２記載のワイヤボンデ
ィング方法。3. The apparatus according to claim 2, wherein the predetermined position at which the clamper is closed differs depending on a change in at least one of a moving path of the capillary, a moving speed of the capillary, and a wire diameter. Wire bonding method. 【請求項４】 前記所定の位置は、前記キャピラリが前
記第１ボンディング点の上方の最上昇位置から前記第２
ボンディング点に下降する間の任意の位置で前記クラン
パを閉じて前記ワイヤをクランプした場合に、前記第１
ボンディング点と前記第２ボンディング点間を接続する
ワイヤループの高さに最もバラツキが小さい位置である
ことを特徴とする請求項２又は３に記載のワイヤボンデ
ィング方法。4. The method according to claim 1, wherein the predetermined position is such that the capillary moves from the highest position above the first bonding point to the second position.
When the clamper is closed and the wire is clamped at an arbitrary position while descending to the bonding point, the first
4. The wire bonding method according to claim 2, wherein the wire loop connecting the bonding point and the second bonding point has the smallest variation in height. 5. 【請求項５】 第１ボンディング点と第２ボンディング
点間をキャピラリから繰り出されるワイヤで接続するワ
イヤボンディング装置において、 前記第１ボンディング点に前記ワイヤをボンディングし
た後、前記キャピラリが前記第１ボンディング点の上方
の最上昇位置から前記第２ボンディング点に下降する間
に、前記キャピラリ内のワイヤの弛みを調整する手段を
具備することを特徴とするワイヤボンディング装置。5. A wire bonding apparatus for connecting a first bonding point and a second bonding point with a wire drawn out of a capillary, wherein after bonding the wire to the first bonding point, the capillary is connected to the first bonding point. A wire bonding apparatus comprising: means for adjusting a slack of a wire in the capillary while descending from the highest position above the second bonding point to the second bonding point. 【請求項６】 第１ボンディング点と第２ボンディング
点間をキャピラリから繰り出されるワイヤで接続するワ
イヤボンディング装置において、 前記第１ボンディング点に前記ワイヤをボンディングし
た後、前記キャピラリが前記第１ボンディング点の上方
の最上昇位置から前記第２ボンディング点に下降する際
に、前記キャピラリの位置を検出する手段と、 前記キャピラリの位置が所定の位置であることが検出さ
れると、前記クランパを閉じて前記ワイヤをクランプす
る手段と、 を具備することを特徴とするワイヤボンディング装置。6. A wire bonding apparatus for connecting a first bonding point and a second bonding point with a wire drawn out of a capillary, wherein after bonding the wire to the first bonding point, the capillary is connected to the first bonding point. Means for detecting the position of the capillary when descending from the highest position above the second bonding point to the second bonding point; and closing the clamper when it is detected that the position of the capillary is a predetermined position. And a means for clamping the wire. 【請求項７】 前記クランパを閉じる所定の位置は、前
記キャピラリの移動軌跡、前記キャピラリの移動速度及
びワイヤ径の中の少なくとも１個以上の条件の変化によ
り異なることを特徴とする請求項６記載のワイヤボンデ
ィング装置。7. The apparatus according to claim 6, wherein the predetermined position at which the clamper is closed differs according to a change in at least one of a moving path of the capillary, a moving speed of the capillary, and a wire diameter. Wire bonding equipment. 【請求項８】 前記所定の位置は、前記キャピラリが前
記第１ボンディングの点の上方の最上昇位置から前記第
２ボンディング点に下降する間にある第１の位置でクラ
ンパを閉じた場合と、第２の位置で前記クランパを閉じ
た場合の前記ワイヤループの高さのバラツキを比較し、
よりバラツキの小さい方の位置を選択し、この選択した
位置で前記クランパを閉じた場合と、第３の位置でクラ
ンパを閉じた場合の前記ワイヤループの高さのバラツキ
を比較し、よりバラツキの小さい方の位置を選択するこ
とを繰り返すことによって、決定することを特徴とする
請求項４記載のワイヤボンディング方法。8. The method according to claim 1, wherein the predetermined position is a state in which the clamper is closed at a first position while the capillary descends from a highest position above the first bonding point to the second bonding point. Comparing the variation in the height of the wire loop when the clamper is closed at the second position,
The position where the variation is smaller is selected, and the height variation of the wire loop when the clamper is closed at the selected position and when the clamper is closed at the third position is compared. 5. The wire bonding method according to claim 4, wherein the determination is made by repeating selection of a smaller position.
JP11084338A 1999-03-26 1999-03-26 Wire bonding method and device Withdrawn JP2000277558A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933608B2 (en) 2002-11-21 2005-08-23 Kaijo Corporation Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus
WO2009117170A1 (en) * 2008-03-17 2009-09-24 Kulicke And Soffa Industries, Inc. Wire payout measurement and calibration techniques for a wire bonding machine
US8016182B2 (en) 2005-05-10 2011-09-13 Kaijo Corporation Wire loop, semiconductor device having same and wire bonding method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933608B2 (en) 2002-11-21 2005-08-23 Kaijo Corporation Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus
US7262124B2 (en) 2002-11-21 2007-08-28 Kaijo Corporation Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus
US8016182B2 (en) 2005-05-10 2011-09-13 Kaijo Corporation Wire loop, semiconductor device having same and wire bonding method
WO2009117170A1 (en) * 2008-03-17 2009-09-24 Kulicke And Soffa Industries, Inc. Wire payout measurement and calibration techniques for a wire bonding machine
US8302841B2 (en) 2008-03-17 2012-11-06 Kulicke And Soffa Industries Wire payout measurement and calibration techniques for a wire bonding machine
CN102047400B (en) * 2008-03-17 2013-01-30 库力索法工业公司 Wire payout measurement and calibration techniques for a wire bonding machine

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