JPS5833825A - 分子線エピタキシヤル成長装置 - Google Patents

分子線エピタキシヤル成長装置

Info

Publication number
JPS5833825A
JPS5833825A JP56130868A JP13086881A JPS5833825A JP S5833825 A JPS5833825 A JP S5833825A JP 56130868 A JP56130868 A JP 56130868A JP 13086881 A JP13086881 A JP 13086881A JP S5833825 A JPS5833825 A JP S5833825A
Authority
JP
Japan
Prior art keywords
cell
chamber
molecular beam
epitaxial growth
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56130868A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159527B2 (OSRAM
Inventor
Hideo Sugiura
杉浦 英雄
Akinori Katsui
勝井 明憲
Zeio Kamimura
税男 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56130868A priority Critical patent/JPS5833825A/ja
Publication of JPS5833825A publication Critical patent/JPS5833825A/ja
Publication of JPS6159527B2 publication Critical patent/JPS6159527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP56130868A 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置 Granted JPS5833825A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56130868A JPS5833825A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56130868A JPS5833825A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5833825A true JPS5833825A (ja) 1983-02-28
JPS6159527B2 JPS6159527B2 (OSRAM) 1986-12-17

Family

ID=15044570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56130868A Granted JPS5833825A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5833825A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329926U (OSRAM) * 1986-08-08 1988-02-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329926U (OSRAM) * 1986-08-08 1988-02-27

Also Published As

Publication number Publication date
JPS6159527B2 (OSRAM) 1986-12-17

Similar Documents

Publication Publication Date Title
CN102691041B (zh) 衬底处理装置和固体原料补充方法
CN105655234B (zh) 脱气方法
KR20160006630A (ko) 프로세스 챔버의 기판 업스트림 프리-베이킹 장치 및 방법
US20180105933A1 (en) Substrate processing apparatus and method for cleaning chamber
JP2670515B2 (ja) 縦型熱処理装置
WO1998019335A1 (fr) Appareil de traitement thermique de type vertical
JPS5833825A (ja) 分子線エピタキシヤル成長装置
JPH11251255A (ja) 半導体ウエハ製造方法及び装置
JPS63109174A (ja) 枚葉式cvd装置
JP2004304116A (ja) 基板処理装置
JPS60113428A (ja) 半導体製造装置
JP3274602B2 (ja) 半導体素子の製造方法及び基板処理装置
JPS63177426A (ja) 気相成長方法及び装置
KR100499211B1 (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
KR101749973B1 (ko) Oled 봉지용 박막 경화 시스템
JP2724649B2 (ja) 減圧cvd装置
JPH05217919A (ja) 自然酸化膜除去装置
JP3361986B2 (ja) 基板処理装置および基板処理方法
JPH11251281A (ja) 半導体ウエハ製造方法及び装置
JPS63938B2 (OSRAM)
JPH03191063A (ja) 連続式スパッタリング装置
JPH06267858A (ja) 真空成膜装置
JP2002246445A (ja) 基板処理装置
JP2005019677A (ja) ティーチング方法
JPS6132393B2 (OSRAM)