JPS5831679B2 - モノリシック集積回路 - Google Patents
モノリシック集積回路Info
- Publication number
- JPS5831679B2 JPS5831679B2 JP52143823A JP14382377A JPS5831679B2 JP S5831679 B2 JPS5831679 B2 JP S5831679B2 JP 52143823 A JP52143823 A JP 52143823A JP 14382377 A JP14382377 A JP 14382377A JP S5831679 B2 JPS5831679 B2 JP S5831679B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- bus
- ground bus
- signal
- enable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 26
- 230000004044 response Effects 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000010354 integration Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 11
- 239000000872 buffer Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74636276A | 1976-12-01 | 1976-12-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5369552A JPS5369552A (en) | 1978-06-21 |
| JPS5831679B2 true JPS5831679B2 (ja) | 1983-07-07 |
Family
ID=25000519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52143823A Expired JPS5831679B2 (ja) | 1976-12-01 | 1977-11-30 | モノリシック集積回路 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5831679B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2753607A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2373124A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1547730A (enrdf_load_stackoverflow) |
| IT (1) | IT1090712B (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55142475A (en) * | 1979-04-23 | 1980-11-07 | Fujitsu Ltd | Decoder circuit |
| JPS5667964A (en) * | 1979-11-08 | 1981-06-08 | Nec Corp | Integrated circuit |
| US4385368A (en) * | 1980-11-24 | 1983-05-24 | Raytheon Company | Programmable read only memory |
| JPS5884549A (ja) * | 1981-11-16 | 1983-05-20 | Nec Corp | 無線選択呼出受信機 |
| US4686651A (en) * | 1984-11-15 | 1987-08-11 | Raytheon Company | Power switched read-only memory |
| DE10051164B4 (de) | 2000-10-16 | 2007-10-25 | Infineon Technologies Ag | Verfahren zur Maskierung von DQ-Bits |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3599182A (en) * | 1969-01-15 | 1971-08-10 | Ibm | Means for reducing power consumption in a memory device |
| US3680061A (en) * | 1970-04-30 | 1972-07-25 | Ncr Co | Integrated circuit bipolar random access memory system with low stand-by power consumption |
| US3859637A (en) * | 1973-06-28 | 1975-01-07 | Ibm | On-chip auxiliary latch for down-powering array latch decoders |
| US3867644A (en) * | 1974-01-07 | 1975-02-18 | Signetics Corp | High speed low power schottky integrated logic gate circuit with current boost |
| US3979611A (en) * | 1975-02-06 | 1976-09-07 | Rca Corporation | Transistor switching circuit |
-
1977
- 1977-11-16 GB GB4773777A patent/GB1547730A/en not_active Expired
- 1977-11-30 JP JP52143823A patent/JPS5831679B2/ja not_active Expired
- 1977-11-30 IT IT5200777A patent/IT1090712B/it active
- 1977-12-01 FR FR7736231A patent/FR2373124A1/fr active Granted
- 1977-12-01 DE DE19772753607 patent/DE2753607A1/de active Granted
Non-Patent Citations (1)
| Title |
|---|
| IEEE JOURNAL OF SOLID-STATE CIRCRCITS * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5369552A (en) | 1978-06-21 |
| GB1547730A (en) | 1979-06-27 |
| FR2373124A1 (fr) | 1978-06-30 |
| IT1090712B (it) | 1985-06-26 |
| DE2753607A1 (de) | 1978-06-08 |
| DE2753607C2 (enrdf_load_stackoverflow) | 1990-05-17 |
| FR2373124B1 (enrdf_load_stackoverflow) | 1984-06-22 |
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