JPS5831609A - Thin film piezoelectric oscillator - Google Patents
Thin film piezoelectric oscillatorInfo
- Publication number
- JPS5831609A JPS5831609A JP12968581A JP12968581A JPS5831609A JP S5831609 A JPS5831609 A JP S5831609A JP 12968581 A JP12968581 A JP 12968581A JP 12968581 A JP12968581 A JP 12968581A JP S5831609 A JPS5831609 A JP S5831609A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon
- thickness
- piezoelectric
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- 239000011810 insulating material Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- -1 0KOH Substances 0.000 description 1
- 241000726103 Atta Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- DZCCLNYLUGNUKQ-UHFFFAOYSA-N n-(4-nitrosophenyl)hydroxylamine Chemical compound ONC1=CC=C(N=O)C=C1 DZCCLNYLUGNUKQ-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は圧電薄膜を用い九五（Ｆ 、 ＵＨＰ用高層高
周波圧電振動子し、特にホウ素を高盛ｊ［Ｋドープした
シリコン薄膜と圧電薄−との組令せからなる複合構造の
振動部位を育する薄膜圧電振動子に関するものである。[Detailed Description of the Invention] The present invention uses a piezoelectric thin film to produce a high-rise high-frequency piezoelectric vibrator for UHP, and in particular consists of a combination of a boron-doped silicon thin film and a piezoelectric thin film. This invention relates to a thin film piezoelectric vibrator that grows the vibrating part of a composite structure.
一般に数十Ｍｋｉｚ以上のような高い周波数で使用され
る圧電振動子は、振動モードとして４ｉ−が厚さく比し
て十分広い薄板の厚み振動を使用する。Generally, a piezoelectric vibrator used at a high frequency of several tens of Mkiz or more uses thickness vibration of a thin plate in which 4i- is sufficiently wide compared to the thickness as a vibration mode.
厚み振動の共振周波数は厚さに反比例するので高い周波
数で使用するためには厚さ′を薄くしなければならない
。しかし、厚さが４０Ｉクロン程度以下になると平行平
−研磨などの加工が非常に蝋しくなり、したがってバル
ク結晶或いは°セラミ。Since the resonant frequency of thickness vibration is inversely proportional to the thickness, the thickness must be made thinner in order to use it at a higher frequency. However, when the thickness is less than about 40 Icm, processing such as parallel flat polishing becomes very difficult, and therefore bulk crystal or ceramic is produced.
りを用いると基本共振周波数でｓ ｏ ｈｔＨｚ以上の
厚み振動圧電振動子を量産することは困難である。If this method is used, it is difficult to mass-produce thickness-vibrating piezoelectric vibrators with a fundamental resonance frequency of sohtHz or more.
これに対して、バルク結晶或いはセラミ、りの奇数次の
高−波を使用すれば、同じ厚みで基本波の３倍、５倍、
・・・等の共振周波数が得られ、これはオーバートーン
邊動子として発振器などに使われている。しかし、第１
次の高＃波を用いた場合の容量比は基本波の容量比Ｔｏ
ｎ” 倍となり、このとき共振周波数と反共振周波数
の間−と共振周波との比は、はばｌ／２ｙＨ”となる、
したがって高−波を使ったのでは容量比の増大に伴って
フィルタ、の比帯域幅及び発振器の制御範囲が狭くなり
すぎる結果を招き、これまた実用に適さないことが多く
なる。On the other hand, if you use odd-numbered high waves of bulk crystal or ceramic, the fundamental wave will be 3 times, 5 times, or 5 times higher with the same thickness.
A resonant frequency such as ... is obtained, and this is used as an overtone oscillator in oscillators. However, the first
The capacity ratio when using the next high # wave is the capacity ratio of the fundamental wave To
n" times, and at this time, the ratio between the resonance frequency and the anti-resonance frequency is 1/2yH".
Therefore, if high-frequency waves are used, as the capacitance ratio increases, the fractional bandwidth of the filter and the control range of the oscillator become too narrow, and this is often not suitable for practical use.
高調波を用いる他の方法は、基板の上に圧電薄Ｉｌｌを
作成し圧電４膜の厚ざが半波長となる共振モードに於い
て基板を麺次振動させるものであり、この場合基板の厚
さが半波長の＊ａ倍に等しいときに容量比は最小値を持
つが、この容量比の最小値社共畿モードが高次になるに
従ってやはり増大する。この方法に於いても基板を薄く
することができないために、５０ ＭＨ，以上の周波数
ではかなり高次の共振モードを用いることＫなり、した
がって基板の厚さを半波長の整数倍に一致させ九として
も容量比が大きいためフィルタの比帯域幅反び発ａＳの
制御範囲は狭くなり実用に適さない。Another method using harmonics is to create a thin piezoelectric layer on the substrate and vibrate the substrate in a resonant mode in which the thickness of the four piezoelectric films is half a wavelength; in this case, the thickness of the substrate is The capacitance ratio has a minimum value when the wavelength is equal to *a times the half wavelength, but the minimum value of this capacitance ratio also increases as the mode becomes higher order. Even with this method, it is not possible to make the substrate thinner, so at frequencies above 50 MH, a considerably higher-order resonant mode must be used. However, since the capacitance ratio is large, the filter's fractional bandwidth and the control range of aS become narrow, making it unsuitable for practical use.
振＃部分の厚さを薄くして容量比の小さな圧電振動子を
得る方法として杜、たとえば特許公告昭４６−２５５７
９ＫＰ−いて提案されているよ５にシリコン、水晶など
の基板上に８ｉｏ！のような絶縁材料の薄膜と圧電薄膜
とを層状に作成し、振動子として使用する部分の基板を
工、チングによって除去することにより、振動部分は８
ｉ０．のような絶縁材料の薄膜と圧電薄膜とからなり、
外縁部を基板によって支持され九構造の薄膜圧電振動子
が知られている。このような？ＩＩＭ圧電振動子は、そ
の損ＩＩｈ部分を薄くできるので、５０ ＭＨｚ以り数
千ＭＨ１Ｋ ＆ぶ周波数においても基本振動或いは第２
次、第３ｒＸなどの低次のＡｍ波振−を使用することが
でき、したがって広い比帯域のフィルタ友び制御範囲の
広い発振器を実現することができる。As a method of obtaining a piezoelectric vibrator with a small capacitance ratio by reducing the thickness of the vibrating part, for example, patent publication No. 46-2557
9KP-It has been proposed that 5 to 8io on a silicon, crystal, etc. substrate! By creating a layer of a thin film of an insulating material and a thin piezoelectric film such as
i0. It consists of a thin film of insulating material such as and a piezoelectric thin film,
A thin film piezoelectric vibrator having a nine-structure structure in which the outer edge portion is supported by a substrate is known. like this? IIM piezoelectric vibrators can reduce the loss IIh portion, so even at frequencies of several thousand MH1K and above 50 MHz, fundamental vibration or second
Next, it is possible to use a low-order Am wave oscillation such as the third rX, and therefore it is possible to realize an oscillator with a wide ratio band filter and a wide control range.
しかし上記のような４Ｍ圧電振動子の機械的強度及び會
響四クォリティ７アクタＱは低く、この点の改暑が望ま
れていた。その後これらの特性が改善された薄膜圧ｉｉ
ｔ振動子として振動部分において圧電薄膜と組合せる４
１１！材料としてホウ素を高濃度にドープしたシリコン
薄膜を用いた振動子が提案された。However, the mechanical strength and acoustic four quality 7 actor Q of the 4M piezoelectric vibrator as described above are low, and improvement in this point has been desired. Thin film thickness ii with improved these properties
4. Combined with a piezoelectric thin film in the vibrating part as a t-oscillator.
11! A resonator using a silicon thin film heavily doped with boron was proposed.
この提案でホウ素を高濃度にドープしたシリコン薄膜を
用いた理由は次のと導りである。The reason for using a silicon thin film heavily doped with boron in this proposal is as follows.
−殻に基板に用いる材料としては表−が（ｉｏｏ）面で
ある工うなシリコンが使用される。なぜならば例えばＫ
ＯＨ、エチレンジアミンのようなエツチング液を用いれ
ば、（１（Ｂｅ）ｄｉの工、チング遮度に比較して（１
１１） ＠の工、チング速度が非常に小さいとい５工、
チングの異方性を示し、したがって面方向への工、チ／
ダの拡がりが極めて小さく振動部分の空孔を寸法精度良
く作成することができるためである。したがって薄膜材
料としては前述０ＫＯＨ、エチレンシアｊ／のような工
、チンダ液に侵されに（いような材料に限定されるがｓ
ｌｏ、。The material used for the shell and substrate is silicon, which has an (ioo) surface. Because, for example, K
If an etching solution such as OH or ethylenediamine is used, the etching resistance is
11) When the cutting speed of @ is very low,
It shows the anisotropy of the chipping, and therefore the machining in the plane direction,
This is because the expansion of the holes is extremely small and the holes in the vibrating portion can be created with high dimensional accuracy. Therefore, as a thin film material, materials such as 0KOH, ethylene shear, etc., which are not easily eroded by tinde liquid (but are limited to materials such as s
Lo,.
８３、Ｎ、などの材料に比べて、シリコン基板表面への
形成が容易であること１機械的強度が高いこと、貴響的
タオリディ・７アクタＱが大きいことｄとの理由から圧
電薄膜と組合せる薄膜材料としてはホウ素を高濃度にド
ープしたシリコン薄膜が最も優れている。Compared to materials such as 83, N, etc., it is easier to form on the silicon substrate surface. 1. It has high mechanical strength, and 7. Actor Q is large. d. The most excellent thin film material for this purpose is a silicon thin film doped with a high concentration of boron.
したがうて振動部位がホウ素を高濃度にドープし九シリ
コン薄膜と圧電１１１Ｉｌｌとからなる薄膜圧電振動子
は、上記のことかられかるように機械的値Ｊｌ！が高く
、會響的りオψティ・７アクタＱが大合いという大きな
着炎を奮する。しかしホウ素を高濃度にドープし九シリ
コン薄ｊｌ紘導電率が非常に大きい丸め、振動子の特性
に関して次のような重大な欠点を膚している。すなわち
、こ０よ５な振動子は、圧電薄膜の両−Ｋｔ＆けた電極
付近へのエネルギー閉じ込め効果を利用したいわゆるエ
ネルギー閉じ込め振動子とするのが普遍であるが、ホウ
素を高濃度にドープしたシリコン薄膜社導電率が非常に
大きいため、該シリコン薄膜と、圧電薄膜との界面に設
ける電極は部分電極とすることが不可能であり、したが
って特に反共振周波数付近においてエネルギー閉じ込め
効果が不完全となる結果、帯域外減衰量が小さくなり、
また圧電薄膜上の部分電極と入出力電極とを接線するリ
ード線部に於いても弾性波がｍ振される結果、周波数特
性に多くのり、プルを生じるという欠点である。Therefore, as can be seen from the above, a thin film piezoelectric vibrator whose vibrating portion is doped with boron at a high concentration and is composed of a silicon thin film and a piezoelectric layer 111Ill has a mechanical value Jl! was high, and the 7th Actor Q, who was in the middle of the symphony, made a big splash. However, since the silicon thin film doped with boron at a high concentration has a very high electrical conductivity, it suffers from the following serious drawbacks regarding the characteristics of the vibrator. In other words, the 0 to 5 oscillator is generally a so-called energy trapping oscillator that utilizes the energy trapping effect near both -Kt and digit electrodes of a piezoelectric thin film, but silicon doped with a high concentration of boron is Since the conductivity of the thin film is very high, it is impossible to use the electrode provided at the interface between the silicon thin film and the piezoelectric thin film as a partial electrode, and therefore the energy trapping effect is incomplete, especially near the anti-resonant frequency. As a result, the out-of-band attenuation becomes smaller,
Furthermore, elastic waves are also oscillated in the lead wire portions that are tangential to the partial electrodes on the piezoelectric thin film and the input/output electrodes, resulting in a large amount of vibration in the frequency characteristics, resulting in a pull.
本発明の目的は、上記のような欠点を除いた薄膜圧電振
動子を提供することであり、本発明の最たる特徴線ホウ
素を高貴直にドープしたシリコン薄膜と圧電＊＊との間
に５ｌｏｈ８１１Ｎ４ナト０ｆｌｈ縁材料の薄膜を一層
有し、この絶縁材料と圧電薄膜との昇−Ｋｇ分電１ｉｔ
−設けた構造にある６本発ｖ４によれば圧電薄膜ｏｓｔ
ｉの電極は共ＫＩ！１分電極とすることが可能てあり、
したがりて帯域外減衰量が大きく、周液数特性上Ｋ ９
ｙプルのない良好な薄膜圧電振動子を得ることができ
る。The purpose of the present invention is to provide a thin film piezoelectric vibrator which eliminates the above-mentioned drawbacks, and the most characteristic feature of the present invention is that 5loh811N4 nanometers are used between the silicon thin film doped with boron and the piezoelectric material. 0flh has one layer of thin film of edge material, and the rise of this insulating material and the piezoelectric thin film - Kg distribution 1it
- Piezoelectric thin film OST according to 6-ray V4 in the structure provided
Both i electrodes are KI! It is possible to use it as a 1 minute electrode.
Therefore, the amount of out-of-band attenuation is large, and due to the peripheral liquid number characteristics, K 9
A good thin film piezoelectric vibrator without y-pull can be obtained.
以下、実施例にしたがって本発明を詳ｊｌＫ説明する。Hereinafter, the present invention will be explained in detail according to examples.
第１．２図は本実＠Ｏ薄馬圧電振動子を利用したエネル
ギー閉じ込め二重モードフィルタＯ構造を示す、第１図
は平−図、第２図線断−図である。Fig. 1.2 shows the structure of an energy trapping dual mode filter O using a real piezoelectric vibrator, Fig. 1 is a plan view, and Fig. 2 is a cross-sectional view.
第１．２図に＄いて１は表向が（Ｚｏｏ） １ｍである
ようなシリコン基板、２は工、チングによりて基板ＩＫ
設は九空孔であり、３線拡散、エビタヤシャル成長或い
はイオン注入によって形成し九ホウ素を高ａｍにドープ
したシリコン薄膜である。４は本実−の最良る特徴とす
るととろＯ胞縁材薄属であり、九とえ＃１８１０麿ｅ
８１ ｍ Ｎ４ などのｌｌ属をスバ、タリｙダ法、Ｃ
ＶＤ法など０７ｊ法で形成する。In Figure 1.2, 1 is a silicon substrate whose front side is (Zoo) 1m long, and 2 is a substrate IK by machining and ching.
The silicon thin film has nine vacancies, is formed by three-line diffusion, epitaxial growth, or ion implantation, and is doped with nine boron to a high am. 4 is the best feature of this fruit, it is Toro O.
81 m
It is formed by a 07j method such as a VD method.
Ｓ杜絶縁材薄膜４の上く形成したダラクンＦＩＥ極であ
る。６社圧電薄朧であり、材料としては酸化１［鉛（Ｚ
ｍＯ）を用いた。Ｚｏｏはスバ、タリング法、ＣＶＤ法
、イオン・プレーティンダ法などにょうてＣ軸が基板−
に対して垂直に配向した薄膜を再現性良く作成でき、し
かも高い抵抗率を持−）丸薄膜となる特長を有している
。さらにＺ、ＯＫ関してれ厚みたて振動モードのエネル
ギー閉じ込めが可能なことも知られている。７は圧電薄
膜上に形成し九電緬であり、一方は入力端子８に、他方
は出方端子９に１ａ統声れている。This is a Darakun FIE electrode formed on the S-Mori insulating material thin film 4. It is a piezoelectric thin film made by 6 companies, and the material is 1 [lead (Z) oxide].
mO) was used. Zoo uses Suba, Talling method, CVD method, ion-plating method, etc. where the C axis is the substrate.
It has the advantage that thin films oriented perpendicularly to the surface of the wafer can be produced with good reproducibility, and also have a high resistivity and can be formed into round thin films. Furthermore, it is known that it is possible to confine the energy of the thick vertical vibration mode regarding Z and OK. Numeral 7 is formed on a piezoelectric thin film and is connected to the nine electric wires.One side is connected to the input terminal 8 and the other side is connected to the output terminal 9.
以下に夾際に行なり九勇造工薯を述べ、本夾施例を具体
的に説明する。（１０Ｇ）シリコン基板表−にホウ素Ｏ
蟲度がｌＸｌ０／７であるようなシリプン層を２μｍ成
長させ、この上にスバ、タリングｆ、によって３０００
ＸＯ８１０ｍ薄履を形成し九。In the following, we will briefly describe the Kuyong construction plant and explain this example in detail. (10G) Boron O on the silicon substrate surface
A silicone layer with a grain size of 1X10/7 was grown to a thickness of 2 μm, and a thickness of 3000 μm was grown on this layer by a process of suba and taring f.
Formed XO810m thin shoes.
８１０、薄膜上Ｋ Ｃｒを下端にしてム鶴をｚｏｏｏｉ
蒸着しフォトリングラフィにより所望のグラウンド電極
バター／とした０次にスバ、タリング法によって１１μ
ｍＯＺｍＯ薄展を形成し、Ｚ、０ 薄膜上にリフト・オ
フによってＡＩの電極を形成した。最後にシリコン基板
の裏−に形成し九８ ｌ 、 Ｎ、薄膜をマスクとして
ＫＯＨ水溶液によって基板の裏−から工、チンダをし振
動部分Ｏ空孔を形成した０以上のよ５ｅＣして作威し九
フィルタは第３図に示すごとく予想通り約１８０１＆を
中心周波数とする帯域通過フィルタ骨性を示した。この
際シリコン基板と２鳳０薄膜との関に８１０．層を持九
ない構造のフィルタを同様の１薯で製造した。このフィ
ルタの周波数特性を第４１１に示す。第３図及び第４図
から判かると詔り８ｉ０．層を持九ない構造のフィルタ
では特に高周液傭での帯域外減衰量が低下して奢り、ま
た周波数特性にす、プルが顕著に見られるのに対し、シ
Ｖ＝ｙｌＨａとｚａＯ薄朧との間に８１０、層を有する
構造のフィルタで線帯域外減衰量が大きく、リップルは
はとんと見られず、本発明の有用性が実証され丸。810, Zoooi Muzuru with K Cr on the thin film at the bottom end
The desired ground electrode butter was deposited by evaporation and photolithography was applied to the desired ground electrode.
A thin film of mOZmO was formed, and an electrode of AI was formed on the Z,0 thin film by lift-off. Finally, using a thin film of 98L, N, and a thin film as a mask, the back of the substrate was etched and soldered with a KOH aqueous solution to form a vacancy in the vibrating area. As shown in FIG. 3, the Shi-9 filter exhibited a band-pass filter characteristic with a center frequency of about 1801 & as expected. At this time, the relationship between the silicon substrate and the 2000 thin film is 810. A filter having a structure without layers was manufactured using a similar piece of paper. The frequency characteristic of this filter is shown in 411th. As can be seen from Figures 3 and 4, Edict 8i0. In a filter with a structure without nine layers, the out-of-band attenuation decreases especially in high-frequency liquids, and a noticeable pull is seen in the frequency characteristics. 810, the out-of-line band attenuation was large in the filter having a layer structure, and no ripples were observed, demonstrating the usefulness of the present invention.
以上Ｏように本実ＩｉＪ！に従えばυＨＰ、ＶＨＦ帯域
に於いて、機械的債度が高（、音響的なりオリティ・７
アタタＱが大会く、しかも゛帯域外減衰量・が大きく周
旋数ＩＩ＃性にリップルのない薄膜圧電ｌｉＩ励子が提
供できる。As above, the truth is IiJ! According to
It is possible to provide a thin film piezoelectric liI exciter with a large atta Q, a large amount of out-of-band attenuation, and no ripples in the rotational number II# property.
第１．２図は本発明の一実篇例であるエネルギー閉じ込
め二重モードフィルタの構造を示し、＃Ｉ１図は平ｄｉ
図、＃ｇ２図は断面図である１図において、１杜表−が
（１０Ｇ）−であるようなシリプ／晶板、２雌工、チン
グによって基板に作成した空孔である。３はホウ素を高
澁度にドープしたシリコン薄膜、４は絶縁材料の薄膜で
ある。５はグラ／ド電極、６は圧電薄膜、７は上部電極
、８は入力電極、９は出力電極である。
第３図は本発明の実施例であるエネルギー閉じ込め二重
モードフィルタの周波数特性を示す。横軸はＭｌ（、単
位で表わした周液数であり、縦軸はｄＢ単位で表わした
減衰量である。２
第４図は従来の構造のエネルギーｌじ込め二重モードフ
ィルタの周波数特性を示す。
第１図
′ｌ
第２図
第３図
周速数（ＮＨＫ ）Figure 1.2 shows the structure of an energy trapping dual mode filter, which is an example of the present invention, and Figure #I1 is a flat diode filter.
Figure #g2 is a cross-sectional view of a hole created in the substrate by a silicon plate/crystal plate, 2-hole machining, and chiming in which the 1-diameter surface is (10G)- in Figure 1, which is a cross-sectional view. 3 is a silicon thin film heavily doped with boron, and 4 is an insulating material thin film. 5 is a ground electrode, 6 is a piezoelectric thin film, 7 is an upper electrode, 8 is an input electrode, and 9 is an output electrode. FIG. 3 shows the frequency characteristics of an energy trapping dual mode filter according to an embodiment of the present invention. The horizontal axis is the peripheral fluid number expressed in Ml (, unit), and the vertical axis is the attenuation amount expressed in dB.2 Figure 4 shows the frequency characteristics of the energy l storage double mode filter with the conventional structure. Figure 1 'l Figure 2 Figure 3 Peripheral speed number (NHK)
Claims (1)
からなる振動部位を持ち、振動部位にあたる部分を工、
チングによって取り除いた基板によって外縁部を支持し
た構造の薄膜圧電振動子において砿シリコン薄展と圧電
薄膜との間に、絶縁材料の薄膜の層を有することを特徴
とする薄膜圧電振動子。It has a vibration part made of a silicon thin film doped with high concentration of boron and a piezoelectric thin film, and the part corresponding to the vibration part is engineered.
1. A thin film piezoelectric vibrator having a structure in which an outer edge portion is supported by a substrate removed by chiming, and having a thin film layer of an insulating material between a thin silicon layer and a piezoelectric thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12968581A JPS5831609A (en) | 1981-08-19 | 1981-08-19 | Thin film piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12968581A JPS5831609A (en) | 1981-08-19 | 1981-08-19 | Thin film piezoelectric oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831609A true JPS5831609A (en) | 1983-02-24 |
| JPH0211043B2 JPH0211043B2 (en) | 1990-03-12 |
Family
ID=15015642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12968581A Granted JPS5831609A (en) | 1981-08-19 | 1981-08-19 | Thin film piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831609A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58121817A (en) * | 1982-01-14 | 1983-07-20 | Murata Mfg Co Ltd | Piezoelectric resonator |
| JPS59202722A (en) * | 1983-04-30 | 1984-11-16 | Murata Mfg Co Ltd | Composite piezoelectric resonator |
| EP0155145A2 (en) * | 1984-03-09 | 1985-09-18 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| JPS62169509A (en) * | 1986-01-21 | 1987-07-25 | Toyo Commun Equip Co Ltd | Piezoelectric resonator for oscillation of overtone in composite structure |
| US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
| JPH02113616A (en) * | 1988-10-24 | 1990-04-25 | Hitachi Ltd | Elastic wave filter and antenna demultiplexer using it |
| US5231327A (en) * | 1990-12-14 | 1993-07-27 | Tfr Technologies, Inc. | Optimized piezoelectric resonator-based networks |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5945773A (en) * | 1994-06-23 | 1999-08-31 | Citizen Watch Co., Ltd. | Piezoelectric actuator for ink-jet printer and method of manufacturing the same |
| JP2001285016A (en) * | 2000-03-29 | 2001-10-12 | Kyocera Corp | Piezoelectric resonator |
| US7161447B2 (en) | 2002-09-25 | 2007-01-09 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, and communication apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4928795A (en) * | 1972-07-14 | 1974-03-14 |
-
1981
- 1981-08-19 JP JP12968581A patent/JPS5831609A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4928795A (en) * | 1972-07-14 | 1974-03-14 |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58121817A (en) * | 1982-01-14 | 1983-07-20 | Murata Mfg Co Ltd | Piezoelectric resonator |
| JPS59202722A (en) * | 1983-04-30 | 1984-11-16 | Murata Mfg Co Ltd | Composite piezoelectric resonator |
| EP0155145A2 (en) * | 1984-03-09 | 1985-09-18 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
| JPS62169509A (en) * | 1986-01-21 | 1987-07-25 | Toyo Commun Equip Co Ltd | Piezoelectric resonator for oscillation of overtone in composite structure |
| JPH02113616A (en) * | 1988-10-24 | 1990-04-25 | Hitachi Ltd | Elastic wave filter and antenna demultiplexer using it |
| US5231327A (en) * | 1990-12-14 | 1993-07-27 | Tfr Technologies, Inc. | Optimized piezoelectric resonator-based networks |
| US5404628A (en) * | 1990-12-14 | 1995-04-11 | Tfr Technologies, Inc. | Method for optimizing piezoelectric resonator-based networks |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5945773A (en) * | 1994-06-23 | 1999-08-31 | Citizen Watch Co., Ltd. | Piezoelectric actuator for ink-jet printer and method of manufacturing the same |
| JP2001285016A (en) * | 2000-03-29 | 2001-10-12 | Kyocera Corp | Piezoelectric resonator |
| JP4557356B2 (en) * | 2000-03-29 | 2010-10-06 | 京セラ株式会社 | Piezoelectric resonator |
| US7161447B2 (en) | 2002-09-25 | 2007-01-09 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, and communication apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0211043B2 (en) | 1990-03-12 |
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