JPS58137318A - Thin-film piezoelectric oscillator - Google Patents
Thin-film piezoelectric oscillatorInfo
- Publication number
- JPS58137318A JPS58137318A JP1992282A JP1992282A JPS58137318A JP S58137318 A JPS58137318 A JP S58137318A JP 1992282 A JP1992282 A JP 1992282A JP 1992282 A JP1992282 A JP 1992282A JP S58137318 A JPS58137318 A JP S58137318A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- electrodes
- partial
- vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 239000011787 zinc oxide Substances 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000003754 machining Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 241001349592 Benincasa fistulosa Species 0.000 description 1
- 235000015866 Citrullus vulgaris var fistulosus Nutrition 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Abstract
Description
【発明の詳細な説明】
本発明は１００Ｍ＆以上の高周波発振子などに基本モー
ドで使用できる。圧電薄膜を利用した厚み振動子に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention can be used in a fundamental mode for a high frequency oscillator of 100M& more. This invention relates to a thickness vibrator using a piezoelectric thin film.
一般にＶＨＦ帯のような高周波帯で使用される圧電振動
子には、振動モードとして板面が厚みに対して十分広い
薄板の厚み振動が使用されている。In general, piezoelectric vibrators used in high frequency bands such as the VHF band use thickness vibration of a thin plate whose surface is sufficiently wide relative to its thickness as a vibration mode.
厚み撮動の共振周波数は厚みに反比例するので高い周波
数で使用する九めＫは、厚みを薄くしなければならない
、しかし水晶振動子や圧電磁器振動子の場合、周波数を
上げるために平行平面研磨により板厚を薄くする方法が
とられているが、板厚が４０μｍ以下になると機械加工
が国難となる。The resonant frequency of thickness imaging is inversely proportional to the thickness, so the thickness must be made thinner for use at high frequencies.However, in the case of crystal resonators and piezoelectric ceramic resonators, parallel plane polishing is required to increase the frequency. Methods have been adopted to reduce the thickness of the plate, but if the plate thickness becomes 40 μm or less, machining becomes a national problem.
従って４０ｐｍという板厚から製造可能な振動子の周波
数の上限は５０ＭＨｚ程度である。Therefore, the upper limit of the frequency of a vibrator that can be manufactured from a plate thickness of 40 pm is about 50 MHz.
これに対して、奇数次の高調波を用いれば同じ厚みで基
本波の３倍、５倍等の奇数倍の共振周波数が得られ、こ
れ社オーバートーン振動子として発損器などに使用され
ている。しかし、ｌｋｎ次の高調波を用いた場合の容量
比は基本波の容量比ｒのｎ 倍となり、このとき共振周
波数と反共損周波数の間隔と共振周波数との比りはば１
／２ｆ♂となる。したがって高調波を使ったのでは容量
比の増大のため、フィルタの比帯域幅、発損器の制御範
囲が狭くなりすぎて実用に供しないことが多くなる。On the other hand, if odd-numbered harmonics are used, resonance frequencies of odd-numbered times, such as 3 times or 5 times, of the fundamental wave can be obtained with the same thickness, and this is used as an overtone oscillator in oscillators. There is. However, when using harmonics of lknth order, the capacitance ratio is n times the capacitance ratio r of the fundamental wave, and in this case, the ratio between the interval between the resonant frequency and the antiresonance frequency and the resonant frequency is 1
/2f♂. Therefore, if harmonics are used, the capacitance ratio increases, and the filter's fractional bandwidth and the oscillator's control range become too narrow, making it impractical in many cases.
上記のような振動子の欠点を解消して高周波帯で容量比
の小さな圧電振動子を得る方法として、基板上に圧電薄
膜を形成し、その後基板を工、チングした構造がある。As a method of solving the above-mentioned drawbacks of the vibrator and obtaining a piezoelectric vibrator with a small capacitance ratio in a high frequency band, there is a structure in which a piezoelectric thin film is formed on a substrate, and then the substrate is machined.
すなわちシリコン、水晶などの基板上Ｋ、シリコン、酸
化物、窒化物、金属などの薄膜と圧電薄膜とをスバ、り
、蒸着、ＣＶＤ法等により層状に作製し、振動子として
使用する部分に相当する基板の部分を工、チングによっ
て除去することにより、振動部分はシリコン、酸化物、
ｉＩｆ化物、金属などの薄膜と電極及び圧電薄膜からな
り、振動部分の外縁部を基板によって支持された構造の
薄膜圧電振動子が研究、開発されている。In other words, it corresponds to the part that is used as a vibrator, where a thin film of K, silicon, oxide, nitride, metal, etc. and a piezoelectric thin film are formed in layers on a substrate such as silicon or quartz by coating, vapor deposition, CVD, etc. By removing the portion of the substrate that
Thin film piezoelectric vibrators are being researched and developed, which are composed of a thin film of iIf compound, metal, etc., an electrode, and a piezoelectric thin film, and have a structure in which the outer edge of the vibrating part is supported by a substrate.
このような圧電薄膜を利用した振動子は振動部分を薄く
できるので、１００ＭＨｚ以上の高周波帯においても基
本振動を使用することができ、従って広′帝域フィルタ
及び制御範囲の広い発振器を実現することができる。Since the vibrating part of a vibrator using such a piezoelectric thin film can be made thin, the fundamental vibration can be used even in a high frequency band of 100 MHz or higher, thus realizing a wide-range filter and an oscillator with a wide control range. I can do it.
以上述べた従来の圧電薄膜を利用した高周波厚み振動子
の構造を第１図（イ）、（ロ）に示す、第１図（イ）は
平蘭図、同図（ロ）は断面図である。第１図に於いて１
１は基板、１２は工、チングによって基板に形成した空
孔である。１３はシリコン、酸化物、窒化物、金属など
からなる薄膜、１４は圧電薄膜、１５．１６は圧電薄膜
の両面に対向して設けた電極である。しかし、このよう
な構造を有する振動子では、１００ＭＨ，以上の高周波
帯において、基本厚み振動モードで動作させることがで
きるが、製造上、良好な共振応答を得るために、上側電
極１５と下側電極１６とが重なる面積を十分大きくする
必要があり、そのために振動子のインピーダンスが小さ
くなりすぎ、しばしば外部回路とのインピーダンス整合
において不都合が生じるおそれがあった。また、振動子
の構造上、下側電極１６から電気端子を取り出すさい、
あらかじめ圧電薄膜の電気端子に対応する部分を工、チ
ングにより除去してやる必要があり、振動子の製造上大
きな障害となっていた。The structure of the conventional high-frequency thickness vibrator using a piezoelectric thin film described above is shown in Figures 1 (A) and (B). Figure 1 (A) is a Hiran diagram, and Figure 1 (B) is a cross-sectional view. be. In Figure 1, 1
1 is a substrate, and 12 is a hole formed in the substrate by machining or etching. 13 is a thin film made of silicon, oxide, nitride, metal, etc.; 14 is a piezoelectric thin film; and 15 and 16 are electrodes provided on both sides of the piezoelectric thin film. However, in a vibrator having such a structure, it is possible to operate in the basic thickness vibration mode in a high frequency band of 100 MH or more, but in manufacturing, in order to obtain a good resonance response, the upper electrode 15 and the lower electrode It is necessary to make the area overlapping with the electrode 16 sufficiently large, and as a result, the impedance of the vibrator becomes too small, which often causes problems in impedance matching with an external circuit. Also, due to the structure of the vibrator, when taking out the electrical terminal from the lower electrode 16,
It was necessary to remove the portion of the piezoelectric thin film corresponding to the electrical terminal in advance by machining or chipping, which was a major obstacle in the manufacture of the vibrator.
本発明は、上記のような従来の薄膜圧電振動子に比べ、
外部回路とのインピーダンス整合を容易に行なうことが
でき、かつ製造工程の簡略化がで舎る優れ九薄−圧電振
動子を実現することを目的とする。Compared to the conventional thin film piezoelectric vibrator as described above, the present invention has the following advantages:
The object of the present invention is to realize an excellent nine-thin piezoelectric vibrator that can easily perform impedance matching with an external circuit and simplify the manufacturing process.
すなわち本発明の薄膜圧電振動子は基板上の厚み方向に
半導体あるい杜絶縁体の薄膜、浮遊部分電極、圧電薄膜
の順で形成され、また該圧電薄膜を介して浮遊部分電極
に対応する位置に２つの部分電極が形成され、仁れら２
つの部分電極からそれぞれ電気端子が引き出されており
、さらに前記基板中の浮遊部分電極に対応する部分が除
去された構造を有している。That is, in the thin film piezoelectric vibrator of the present invention, a semiconductor or insulator thin film, a floating partial electrode, and a piezoelectric thin film are formed in this order in the thickness direction on a substrate, and a position corresponding to the floating partial electrode is formed through the piezoelectric thin film. Two partial electrodes are formed on the
Electrical terminals are drawn out from each of the two partial electrodes, and a portion of the substrate corresponding to the floating partial electrode is removed.
以下、本発明について詳細に説明する。第２１社１本発
明の薄膜圧電振動子の基本的構造を示す。The present invention will be explained in detail below. 21st Company 1 The basic structure of the thin film piezoelectric vibrator of the present invention is shown.
第２図において、２１はシリコン、水晶などの工、チン
グ可能な基板であり、２２は工、チンダによって基板２
１に設けられ大空孔である０例えｄ基板２１として表面
が（１０Ｇ）面であるシリコンを用いた場合、水酸化カ
リウム、エチレンジ７！ンのような工、チンダ液を用い
れば、（１０Ｇ）面の工、チング速ｔＫ対して（１１１
）面の工、チンダ速度が極めて小さいという工、チンダ
の異方性を示すことにより、（１１１）面方向への工、
チングの拡がりが極めて小さく、従って精度良く空孔０
寸法を制御することができて好都合である。また、２３
は半導体あるいは絶縁体からなる薄膜である０例えに薄
膜２３としては、熱酸化によりシリコン表面に形成した
酸化シリコン、Ｘｌ１ｃｖｎ法により形成した窒化シリ
コンであっても良いし、シリコン基板にホウ素の拡散、
イオン注入、またはエピタキシャル成長させることＫよ
りホウ素をｉ＆濃直に含むシリコン薄膜の上に酸化シリ
コンを形成したものであっても良い、酸化シリコンやホ
ウ素を高密度にドープしたシリコンは、水酸化カリ妙ム
やエチレンジアミンのような工、チング液には、はとん
ど工、チングされないことが知られており。In FIG. 2, 21 is a substrate made of silicon, crystal, etc. that can be etched, and 22 is a substrate 2 that can be etched or tinted.
For example, if silicon whose surface is a (10G) plane is used as the d substrate 21, potassium hydroxide, ethylene di7! If we use a tyndah liquid, we can obtain (111
) Surface machining, machining in the direction of the (111) plane, by showing the anisotropy of tinda,
The spread of the ting is extremely small, so there is no hole with high precision.
It is advantageous to be able to control the dimensions. Also, 23
is a thin film made of a semiconductor or an insulator.For example, the thin film 23 may be silicon oxide formed on the silicon surface by thermal oxidation, silicon nitride formed by the
Silicon oxide may be formed on a silicon thin film that contains boron at a high concentration by ion implantation or epitaxial growth. It is known that chemical agents such as aluminum and ethylenediamine do not cause chemical reactions or chemical reactions.
薄膜２３の厚さを精密に制御することができる。The thickness of the thin film 23 can be precisely controlled.
２４は圧電薄膜である０例えば圧電薄膜として酸化亜鉛
、窒化アルミニウムが知られており、共にスパ、り法又
はＣＶＤ法等により形成が可能である。Reference numeral 24 denotes a piezoelectric thin film 0. For example, zinc oxide and aluminum nitride are known as piezoelectric thin films, and both can be formed by a spa method, an eluting method, a CVD method, or the like.
また、２５は薄膜２３上に設けられた浮遊部分電極、２
６．２７は、浮遊電極に対向して圧電薄膜２３１に設け
られた部分電極である。いま、部分電４２６．２７から
電気端子をとり電気的に励振すると、この振動子は、左
側の電極２６とｔ＊２ｓの重なり合った部分が厚み方向
に伸びると、右側の電極２７と電極２５の重なり合った
部分が厚み方向に縮むといった振動を行う０本発明の振
動子では構造上、第１図に示した従来の゛振動子と比較
して、圧電薄膜の上下面に対向して設けられ九電極の重
なる面積が同じ場合、振動子のインピーダンスは４倍程
度大きくなるため、高周波で動作させるときに外部回路
とのインピーダンス整合において有利となる。また、入
出力電極２６．２７がともに圧電薄膜２４の上面に設け
られているため、従来の振動子と比べ電気端子をとり出
すための工程が必要でなく、製造工程の簡略化が可能な
優れ大損動子を供給することができる。Further, 25 is a floating partial electrode provided on the thin film 23;
6.27 is a partial electrode provided on the piezoelectric thin film 231 facing the floating electrode. Now, when the electric terminal is taken from the partial voltage 426.27 and it is electrically excited, this vibrator will cause the overlapping part of the left electrode 26 and t*2s to extend in the thickness direction, and the right electrode 27 and the electrode 25 to be connected to each other. The vibrator of the present invention vibrates in such a way that the overlapping portions contract in the thickness direction.The vibrator of the present invention is structurally different from the conventional vibrator shown in FIG. If the overlapping area of the electrodes is the same, the impedance of the vibrator will be about four times larger, which is advantageous in impedance matching with an external circuit when operating at a high frequency. In addition, since both the input and output electrodes 26 and 27 are provided on the top surface of the piezoelectric thin film 24, there is no need for a process to take out the electrical terminals compared to conventional vibrators, which is an advantage in simplifying the manufacturing process. A large loss element can be supplied.
また、９２図に示した本発明の薄膜圧電振動子は、周波
数調整及び圧電薄膜の保護のため、第３図に示し、たよ
うに電極２６．２７の上に絶縁薄膜４１を設けることも
可能である。Furthermore, in the thin film piezoelectric vibrator of the present invention shown in FIG. 92, an insulating thin film 41 can be provided on the electrodes 26 and 27 as shown in FIG. 3 for frequency adjustment and protection of the piezoelectric thin film. It is.
以下、実施例に従って本発明について説明する。Hereinafter, the present invention will be explained according to Examples.
実施例
第２図に示した構造において表面が（Ｚｏｏ）面である
シリコン基板２１にスバ、り法を用いて０．７５μｍの
８１０．薄膜２３を形成した。 ８ｉ０．薄膜２３上に
Ｏｒを下地としてＡｍを蒸着した浮遊電極２５を設け、
その上にスバ、り法を用いて厚さ５μｍのＺｎＯ圧電薄
膜２４を形成した。さらＫ ｚ、０薄膜２４の上にリフ
トオフによってＡ１０部分電極２６．２７を形成した１
次に、シリコン基板の裏面に形成したＳｉ、Ｎ４薄膜を
マスクとして振動部位にあたるシリコン基板をＫＯＨ水
溶液を用いて工。EXAMPLE In the structure shown in FIG. 2, a silicon substrate 21 having a (Zoo) surface is coated with a 0.75 μm 810. A thin film 23 was formed. 8i0. A floating electrode 25 in which Am is vapor-deposited using Or as a base is provided on the thin film 23,
A ZnO piezoelectric thin film 24 having a thickness of 5 μm was formed thereon using a sputtering method. Furthermore, A10 partial electrodes 26 and 27 were formed on the Kz,0 thin film 24 by lift-off.
Next, using the Si and N4 thin film formed on the back side of the silicon substrate as a mask, the silicon substrate corresponding to the vibration site was etched using a KOH aqueous solution.
チングし空孔２２を形成し、第２図の構造の薄膜圧電撮
動子を製造した。A thin film piezoelectric sensor having the structure shown in FIG. 2 was manufactured by etching to form holes 22.
この振動子の基本共撫局波数は５３０ＭＨ，であり、共
振尖鋭度ｑ ３００Ｇ以上の値が容易に得られ、良好な
共振応答を示した。The basic resonance frequency of this vibrator was 530 MH, and a resonance sharpness q of 300 G or more was easily obtained, indicating a good resonance response.
次に、５００ＭＨ！の共振応答を得る丸め、電極２６．
２７の上面に、第４図に示したように８這０！薄膜４１
をスバ、り法で形成し、同時に共振周波数をモニターし
ながら周液数調整を行った。このときも、共振周波数５
００ＭＨｚ において共−尖鋭度３０００ ｊａ上の値
が得られた。Next, 500MH! Round the electrode 26 to obtain a resonant response.
27 on the top surface, as shown in Figure 4, 8 crawl 0! Thin film 41
was formed using the subaru method, and at the same time the number of peripheral liquids was adjusted while monitoring the resonance frequency. At this time as well, the resonance frequency is 5
At 0.00 MHz, values of co-sharpness of over 3000 ja were obtained.
本発明の薄膜圧電振動□子は、従来の第１図に示し九薄
膜圧電振動子に比べ、インピーダンスが４倍以上になっ
ているため外部回路とのインピーダンス整合が容易であ
りまた入出力電極が同一平面上にあるため製造が容易で
あり、高周波帯において、＾性能を有し、工業的価値も
多大である。The thin-film piezoelectric vibrator of the present invention has an impedance more than four times that of the conventional thin-film piezoelectric vibrator shown in FIG. Since they are on the same plane, they are easy to manufacture, have good performance in high frequency bands, and have great industrial value.
第１図は従来の薄膜圧電振動子の構造を示す因〒あり、
（イ）はその平面図、（ロ）はその断面図である。
第２図は、本発明の薄膜圧電振動子の構造を示す図であ
り、（イ）はその平面図、（ロ）はその断面図である。
第３図は、第２図に示した本発明の薄膜圧電振動子の表
面に絶縁薄膜を設けた構造を示す断面図である０以上の
図において、
１１．２１は基板、１２．２２は基板に設けられた空孔
、１３は半導体あるいは絶縁体あるいは金属からなる薄
膜、１４．２４は圧電薄膜、１５゜１６．２５，２６，
２７社電廟、２３は半導体あるいは絶縁体からなる薄膜
、４１＃ｉ絶緻薄膜である。
第 Ｚ 図
ＺＺFigure 1 shows the structure of a conventional thin film piezoelectric vibrator.
(a) is its plan view, and (b) is its cross-sectional view. FIG. 2 is a diagram showing the structure of the thin film piezoelectric vibrator of the present invention, in which (a) is a plan view thereof and (b) is a cross-sectional view thereof. FIG. 3 is a cross-sectional view showing a structure in which an insulating thin film is provided on the surface of the thin film piezoelectric vibrator of the present invention shown in FIG. 13 is a thin film made of a semiconductor, an insulator, or a metal, 14.24 is a piezoelectric thin film, 15° 16.25, 26,
27 is a thin film made of a semiconductor or an insulator, 23 is a thin film made of a semiconductor or an insulator, and 41#i is an extremely dense thin film. Figure ZZZ
Claims (1)
退部分電極、圧電薄膜の順で形成され、ま九鋏圧電薄膜
を介して浮遊部分電極に対応する位置に２つの部分電極
が形成され、これら２つの部分電極からそれぞれ電気端
子が引き出されており。 さらに前記基板中の浮遊部分電極に対応する部分が除去
されている構造を特徴とする薄膜圧電振動子。[Claims] A thin film of semiconductor or insulator in the thickness direction on the substrate. #
A retracted partial electrode and a piezoelectric thin film are formed in this order, and two partial electrodes are formed at positions corresponding to the floating partial electrode via the piezoelectric thin film, and electrical terminals are drawn out from each of these two partial electrodes. . Furthermore, a thin film piezoelectric vibrator characterized in that a portion of the substrate corresponding to the floating partial electrode is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992282A JPS58137318A (en) | 1982-02-10 | 1982-02-10 | Thin-film piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992282A JPS58137318A (en) | 1982-02-10 | 1982-02-10 | Thin-film piezoelectric oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58137318A true JPS58137318A (en) | 1983-08-15 |
Family
ID=12012708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1992282A Pending JPS58137318A (en) | 1982-02-10 | 1982-02-10 | Thin-film piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137318A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068711A (en) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | Piezoelectric thin film resonator |
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| WO1991019351A1 (en) * | 1990-05-25 | 1991-12-12 | Toyo Communication Equipment Co., Ltd. | Structure of electrode and lead thereof of ultra thin plate piezoelectric resonator |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5281888A (en) * | 1992-03-17 | 1994-01-25 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element having auxiliary electrode disposed between piezoelectric/electrostrictive layer and substrate |
| WO2004038914A1 (en) * | 2002-10-28 | 2004-05-06 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibrator, filter using same, and method for adjusting piezoelectric vibrator |
| FR2920591A1 (en) * | 2007-09-04 | 2009-03-06 | Renault Sas | ELECTROACTIVE MEMBRANE ACTUATOR DEVICE |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528663A (en) * | 1978-08-22 | 1980-02-29 | Noto Denshi Kogyo Kk | Piezoelectric oscillation element |
| JPS55109020A (en) * | 1979-02-13 | 1980-08-21 | Fujitsu Ltd | Piezoelectric oscillator |
-
1982
- 1982-02-10 JP JP1992282A patent/JPS58137318A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528663A (en) * | 1978-08-22 | 1980-02-29 | Noto Denshi Kogyo Kk | Piezoelectric oscillation element |
| JPS55109020A (en) * | 1979-02-13 | 1980-08-21 | Fujitsu Ltd | Piezoelectric oscillator |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068711A (en) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | Piezoelectric thin film resonator |
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| WO1991019351A1 (en) * | 1990-05-25 | 1991-12-12 | Toyo Communication Equipment Co., Ltd. | Structure of electrode and lead thereof of ultra thin plate piezoelectric resonator |
| US5235240A (en) * | 1990-05-25 | 1993-08-10 | Toyo Communication Equipment Co., Ltd. | Electrodes and their lead structures of an ultrathin piezoelectric resonator |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5281888A (en) * | 1992-03-17 | 1994-01-25 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element having auxiliary electrode disposed between piezoelectric/electrostrictive layer and substrate |
| WO2004038914A1 (en) * | 2002-10-28 | 2004-05-06 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibrator, filter using same, and method for adjusting piezoelectric vibrator |
| US7414349B2 (en) | 2002-10-28 | 2008-08-19 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric vibrator, filter using the same and its adjusting method |
| FR2920591A1 (en) * | 2007-09-04 | 2009-03-06 | Renault Sas | ELECTROACTIVE MEMBRANE ACTUATOR DEVICE |
| WO2009044041A2 (en) | 2007-09-04 | 2009-04-09 | Renault S.A.S. | Actuator device with electro-active membrane |
| WO2009044041A3 (en) * | 2007-09-04 | 2009-05-28 | Renault Sa | Actuator device with electro-active membrane |
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