JPS58137319A - High frequency piezoelectric oscillator - Google Patents
High frequency piezoelectric oscillatorInfo
- Publication number
- JPS58137319A JPS58137319A JP1911482A JP1911482A JPS58137319A JP S58137319 A JPS58137319 A JP S58137319A JP 1911482 A JP1911482 A JP 1911482A JP 1911482 A JP1911482 A JP 1911482A JP S58137319 A JPS58137319 A JP S58137319A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- conductive
- piezoelectric
- substrate
- insulating thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000003754 machining Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 241001349592 Benincasa fistulosa Species 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 235000015866 Citrullus vulgaris var fistulosus Nutrition 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Abstract
Description
【発明の詳細な説明】
本発明は１００ＭＨ，以上の高周波発振子などに基本長
−ドで使用できる、圧電薄膜を利用した厚み振動子Ｋ１
１ｌするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a thickness resonator K1 using a piezoelectric thin film, which can be used with a basic length for a high frequency resonator of 100 MHz or more.
It weighs 1 liter.
一般［、ＶＨＦ帯のよ５な高周波帯で使用される圧電振
動子ＫＦｉ、振動モードとして板面が厚±に対して十分
広い薄膜の厚み振動が使用されている。In general, the piezoelectric vibrator KFi used in high frequency bands such as the VHF band uses thickness vibration of a thin film whose plate surface is sufficiently wide relative to the thickness ± as the vibration mode.
厚み振動の共振周波数社厚みに反比例するので＾い周波
数で使用するためＫは、厚みを薄くしなけれはならない
。Since the resonant frequency of thickness vibration is inversely proportional to the thickness, K must be thin in order to use it at a high frequency.
しかし、水晶振動子や圧電磁器振動子の場合、周波数を
上げるために平行平面研磨により板厚を薄くする方法が
とられているが、板厚が４０ｐｍ以下になると機械加工
が困難となる。However, in the case of crystal resonators and piezoelectric ceramic resonators, in order to increase the frequency, a method is used to reduce the plate thickness by parallel plane polishing, but when the plate thickness becomes 40 pm or less, machining becomes difficult.
従って、４０μｍという板厚から、製造可能な伽動子の
周波数の上限は５０ＭＨ，程度である。Therefore, the upper limit of the frequency of the cable that can be manufactured from a plate thickness of 40 μm is about 50 MH.
これに対して奇数次の高調波を用いれは、同じ厚みで基
本波の３倍、５倍等の奇数倍の共振周波数が得られ、こ
れはオーバートーン振動子として発振器などに使用され
ている。しかし、第１次の高調波を用いた場合の容量比
は基本波の容量比ｒのｎ２ 倍となり、このとき共振周
波数と反共撫周波数の間隔と共振周波数との比は、はぼ
１／２ｒｎ”となる、したがって高調波を使ったのでは
、答量比の増大のため、フィルタの比帯域幅、発振器の
制御範囲が狭くなりすぎて実用に供しないことが多くな
る。On the other hand, when odd-numbered harmonics are used, a resonant frequency of odd-numbered times, such as 3 times or 5 times, of the fundamental wave can be obtained with the same thickness, and this is used as an overtone oscillator in oscillators. However, when the first harmonic is used, the capacitance ratio is n2 times the capacitance ratio r of the fundamental wave, and in this case, the ratio between the interval between the resonance frequency and the anti-resonance frequency and the resonance frequency is approximately 1/2rn Therefore, if harmonics were used, the ratio of the response amount would increase, and the filter's fractional bandwidth and the oscillator's control range would become too narrow to be of practical use.
上記のような振動子の欠点を解消して高周波帯で容量比
の小さな圧電振動子を得る方法として、基板上に圧電薄
膜を形成し、その後基板を工、チングにより除去した構
造がある。すなわち、シリコン、水晶などの基板上に、
シリコン、酸化物、窒化物、金属などの薄膜と圧電薄膜
とをスバ、り、蒸着、ＣＶＤ法等により層状に作製し、
振動子として使用する部分に相当する基板の部分を工、
チングによって除去することにより、振動部分はシリコ
ン、電化物、窒化物、金属などの薄膜と電極及び圧電薄
膜からなり、振動部分の外縁部を基板によって支持され
た構造の薄膜圧電振動子が研究、開発されている。As a method of solving the above-mentioned drawbacks of the vibrator and obtaining a piezoelectric vibrator with a small capacitance ratio in a high frequency band, there is a structure in which a piezoelectric thin film is formed on a substrate, and then the substrate is removed by machining or chipping. In other words, on a substrate such as silicon or crystal,
A thin film of silicon, oxide, nitride, metal, etc. and a piezoelectric thin film are produced in a layered manner by coating, vapor deposition, CVD, etc.
Machining the part of the board corresponding to the part to be used as a vibrator,
By removing the vibrating part by chipping, a thin film piezoelectric vibrator with a structure in which the vibrating part is made of a thin film of silicon, electrified material, nitride, metal, etc., an electrode, and a piezoelectric thin film, and the outer edge of the vibrating part is supported by a substrate, has been researched. being developed.
このような圧電薄膜を利用した振動子は、振動部分を薄
くできるので、１００ＭＨｚ以上の高周波帯においても
基本振動を使用することができ、従って広帯域フィルタ
及び制御範囲の広い発振益金実現することができる。Since the vibrating part of a vibrator using such a piezoelectric thin film can be made thin, the fundamental vibration can be used even in a high frequency band of 100 MHz or more, and therefore a wide band filter and an oscillation gain with a wide control range can be realized. .
以上述べた従来の圧電薄膜を利用した高周波厚み振動子
の構造を第１図（イ）、（ロ）Ｋ示す、第１図（イ）は
平面図、同図（ロ）Ｆｉ断面−である、第１図に於いて
１ｌＦｉ基板、１２ｔｉ工、チングによって基板に形成
した空孔である。１３はシリコン、酸化物、窒化物、金
属などからなる薄膜、１４Ｆｉ圧電薄膜、１５．１６は
圧電薄膜の両面Ｋ、対向して投けた電極である。しかし
、このような構造を有する振動子では、１００ＭＨ２以
上の高周波帯において、基本厚み振動モードで動作させ
ることができるが、製造上、良好な共振応答を得るため
に、上＠ ＠ 機１５と下側ｔＴｈ１６とが重なる面積
を十分大きくする必要があり、そのために振動子のイン
ピーダンスが小さくなりすぎ、しばしｄ外部回路とのイ
ンピーダンス整合において不都合が生じるおそれがあっ
た。また、撮動子の構造上、下側電極１６から電気端子
を取り出すさい、あらかじめ圧電薄膜の電気端子に対応
する部分を工、チングにより除去してやる必要があり、
振動子の製造上、太きな障害となっていた。The structure of the high-frequency thickness vibrator using the conventional piezoelectric thin film described above is shown in Figure 1 (A) and (B) K. Figure 1 (A) is a plan view, and Figure 1 (B) is a cross section of Fi. In FIG. 1, holes are formed in a 1lFi substrate, 12ti etching, and etching. 13 is a thin film made of silicon, oxide, nitride, metal, etc., 14 is a Fi piezoelectric thin film, and 15.16 is an electrode placed on both sides K of the piezoelectric thin film, facing each other. However, a vibrator with such a structure can be operated in the basic thickness vibration mode in a high frequency band of 100 MH2 or more, but in manufacturing, in order to obtain a good resonance response, It is necessary to make the area overlapping with the side tTh16 sufficiently large, and as a result, the impedance of the vibrator becomes too small, which may cause problems in impedance matching with an external circuit. Furthermore, due to the structure of the camera element, when taking out the electrical terminal from the lower electrode 16, it is necessary to remove the portion of the piezoelectric thin film that corresponds to the electrical terminal by machining or chipping.
This was a major obstacle in the manufacture of vibrators.
本発明は、上記のような従来の薄膜圧電振動子の欠点を
とり除き外部回路とのインピーダンス整合を容ＪＪＴＫ
行なうことができ、かつ製造工程の簡略化が″できも優
れた高周波圧電振動子を実現することを目的とする。The present invention eliminates the drawbacks of the conventional thin film piezoelectric vibrator as described above and enables impedance matching with an external circuit.
The object of the present invention is to realize a high-frequency piezoelectric vibrator that is excellent in that the manufacturing process can be simplified and that the manufacturing process can be simplified.
すなわち本発明の高周波圧電振動子は基板上の厚み方向
に順次、導電性薄膜、絶縁薄膜、圧電薄膜が形成され、
しかも前記導電性薄膜上の一定の範囲には前記絶縁薄膜
が形成されておらず、また圧電薄膜を介して、この絶縁
薄膜が形成されていない範囲に対応する位置に２つの部
分電極が形成され、これら２つの部分電極からそれぞれ
電気端子が引き出されて怠り、さらに前記基板中で絶縁
薄膜が形成されていない範囲に対応する部分が除去され
ている構造を有している。That is, in the high frequency piezoelectric vibrator of the present invention, a conductive thin film, an insulating thin film, and a piezoelectric thin film are sequentially formed on a substrate in the thickness direction,
Moreover, the insulating thin film is not formed in a certain range on the conductive thin film, and two partial electrodes are formed at positions corresponding to the range where the insulating thin film is not formed, via the piezoelectric thin film. It has a structure in which electrical terminals are drawn out from these two partial electrodes, respectively, and a portion of the substrate corresponding to the area where the insulating thin film is not formed is removed.
以下、本発明について詳細に説明する。第２図線１本発
明の高周波圧電撮動子の基本的構造を示す、第２図にお
いて、２１はシリコン、水晶などの工、チング可能な基
板であり、２２は工、チングによって基板２１に設けら
れた空孔である０例えば基板２１として表面が（１００
）面であるシリコンを用いた場合、水酸化カリウム、エ
チレンジアミンのような工、チンダ液を用いれば、（１
００）面の工、チング速度に対して（１１１）面の工、
チンダ速度が極めて小さいという工、チングの異方性を
示すことＫより、（１１１）面方向への工、チングの拡
がりが極めて小さく、従って精度良（空孔の寸法を制御
することができて好都合である。また、基板２１の上に
導電性薄膜３１を形成し、絶縁薄膜３２を導電性薄膜３
１上に設け、工、ナングにより空孔２２に対応する部分
の絶縁薄膜３２を除去する。その後圧電薄膜２４及び部
分電接２６゜２７を形成する。とこで導電性薄膜は金属
を蒸着する以外にシリコンにホウ素を高密度にドープす
ることにより得られ、この部分１ｉＫＯＨ等の工、チン
グｌ［Ｋ対して極めて工、チンクされにくいため、平面
度の高い良質の薄膜が得られるわけである。The present invention will be explained in detail below. Fig. 2 Line 1 In Fig. 2, which shows the basic structure of the high frequency piezoelectric sensor of the present invention, 21 is a substrate made of silicon, crystal, etc. that can be processed or etched, and 22 is a substrate 21 that can be processed or etched by etching or etching. For example, if the surface of the substrate 21 is (100
) surface, if you use a chemical such as potassium hydroxide, ethylenediamine, or tinda liquid, (1
00) surface machining, (111) surface machining for ching speed,
The fact that the chipping speed is extremely low and the chipping exhibits anisotropy indicates that the spread of the chipping in the direction of the (111) plane is extremely small, resulting in good precision (the size of the holes can be controlled). This is convenient.Also, a conductive thin film 31 is formed on the substrate 21, and an insulating thin film 32 is formed on the conductive thin film 3.
1, and the insulating thin film 32 in the portion corresponding to the hole 22 is removed by machining and punching. Thereafter, a piezoelectric thin film 24 and partial electrical contacts 26 and 27 are formed. The conductive thin film is obtained by doping silicon with boron at a high density in addition to vapor-depositing a metal. A high quality thin film can be obtained.
絶縁薄膜は、シリフンを熱酸化したり、酸化シリコン、
酸化アルミニウム等をスバ、タリンダすることにより容
易に得られる。Insulating thin films can be made by thermally oxidizing silicone, silicon oxide,
It can be easily obtained by melting aluminum oxide or the like.
第２図の撮動子は、電極２６．２７ｔＣ対応する３１の
部分が導電性を有している丸め、部分電極２６．２７か
ら電気端子をとり電気的に励振すると、左伺の電極２６
と導電性薄膜３１０重なり部分が厚み方向に伸びると、
右側の電極２７と導電性薄膜３１０重なり合った部分が
縮むといった振動を行う。The camera element shown in Fig. 2 has a rounded shape in which the part 31 corresponding to the electrode 26.27tC is conductive, and when an electric terminal is taken from the partial electrode 26.27 and electrically excited, the electrode 26.
When the overlapping part of the conductive thin film 310 extends in the thickness direction,
The portion where the right electrode 27 and the conductive thin film 310 overlap is vibrated to contract.
本発明の振動子では、構造上第１図に示した従来の振動
子と比較して、圧電薄膜の上下面に対向して設けられた
電極の重なる面積が同じ場合、撮動子のインピーダンス
は４倍程度大きくなるため高周波で動作させるときに外
部回路とのインピーダンス整合において有利となる。ま
た、入出力電極２６．２７がともに圧電薄膜２４の上面
に設けられているため従来の振動子と比べ、電気端子を
とり出すための工程が必要でなく、製造工程の簡略化が
可能な優れた振動子を供給することができる。In the vibrator of the present invention, compared to the conventional vibrator shown in FIG. 1 due to its structure, when the overlapping area of the electrodes provided facing the upper and lower surfaces of the piezoelectric thin film is the same, the impedance of the sensor is Since it is about four times larger, it is advantageous in impedance matching with an external circuit when operating at a high frequency. In addition, since the input and output electrodes 26 and 27 are both provided on the top surface of the piezoelectric thin film 24, compared to conventional vibrators, there is no need for a process to take out the electrical terminals, which is an advantage in that the manufacturing process can be simplified. It is possible to supply vibrators with
また、第２図に示した本発明の薄膜圧電振動子は、周波
数調整及び圧電薄膜の保護のため、第３図に示したよう
に電極２６，２７の上に絶縁薄膜４１を設けることも可
能である。Furthermore, in the thin film piezoelectric vibrator of the present invention shown in FIG. 2, an insulating thin film 41 can be provided on the electrodes 26 and 27 as shown in FIG. 3 for frequency adjustment and protection of the piezoelectric thin film. It is.
以下、実施例に従って本発明について説明する。Hereinafter, the present invention will be explained according to Examples.
実施例
第２図に示した構造において表面が（１０Ｇ）面である
シリコン基板２１にホウ素を１０”／ｃＩＩＯ濃ｔＫ）
−プしたシリコン薄膜３１を２μｍｏ厚さにエピタキシ
ャル成長させた。その上に８印、薄膜３２を２μｍスバ
、り法で形成し、振動部位に相当する旧０．薄膜を工、
チングにより除去した。Example In the structure shown in FIG. 2, boron is added to a silicon substrate 21 whose surface is a (10G) plane at a concentration of 10"/cIIO (tK).
- The silicon thin film 31 was epitaxially grown to a thickness of 2 μm. On top of that, a thin film 32 with a thickness of 8 and 2 μm was formed using a thin film 32, and a thin film 32 with a thickness of 2 μm was formed using the old 0.0 mm, which corresponds to the vibrating area. Processing thin film,
removed by ching.
さらＫ ｚｎｏ圧電薄膜を５μｍスパッタ法で形成し、
リフトオフによってＡ１電４２６．２７を投けた。Furthermore, a Kzno piezoelectric thin film was formed by a 5 μm sputtering method,
By lift-off, he threw A1 electric 426.27.
次にシリコン基板裏面に形成した８ｉ、Ｎ４薄膜をマス
クとして、振動部位にあた−るシリコン基板を。Next, using the 8i, N4 thin film formed on the back side of the silicon substrate as a mask, we measured the silicon substrate that corresponds to the vibration site.
エチレンジ７ミン、パイルカテコール、水ｉｐうする工
、チンダ液により除去し、空孔２２を設けえ。Remove with ethylenedi7mine, pile catechol, water immersion, and tinda solution, and create holes 22.
上記のような工程によって高周波圧電振動子を製造した
。この振動子の基本共振周波数は４’ｌＯＭＨｓであり
、共振尖鋭度２，０００以上の値が容易に得られた。さ
らに周波数調整のため、鯖３図に示し九ように８１０嘗
薄膜４１をスバ、り法により形成し、４５０ＭＨ，の共
振周波数を得た。このときも２０００以上の共振尖鋭度
の値が得られた。A high frequency piezoelectric vibrator was manufactured through the steps described above. The fundamental resonance frequency of this vibrator was 4'lOMHs, and a resonance sharpness of 2,000 or more was easily obtained. Furthermore, in order to adjust the frequency, an 810-thickness thin film 41 was formed by the sputtering method as shown in Fig. 3, and a resonant frequency of 450 MH was obtained. At this time as well, a resonance sharpness value of 2000 or more was obtained.
実施例に示した振動子は、従来の第１図に示した薄膜圧
電振動子に比べ、いずれもインピーダンスが４倍以上に
なっているため外部回路とのインピーダンス整合が容易
であり、入出力電極が同一平面上にあるため製造が容易
であり、高周波帯において高性能を有し工業的価値も多
大である。The vibrators shown in the examples have an impedance more than four times that of the conventional thin-film piezoelectric vibrator shown in FIG. Since they are on the same plane, it is easy to manufacture, has high performance in a high frequency band, and has great industrial value.
第１ｔＩＡｔ１従来Ｏ薄膜圧電振動子の構造を示す図で
あり、（イ）紘その平面図、（ロ）はその断面図である
。
第２図は本発明の薄膜圧電振動子の構造を示す図であり
、そＯピ）は平面図、（ロ）はその断面図である。
第３図は第！ＩＩＫ示した本発明の薄膜圧電振動子の表
面に絶縁薄膜を設けた構造を示す断面図である。以上の
図において、
１１．２１は基板、１２，２２は基板に設けら１６．２
６．２７は電極、３１は導電性薄膜、３２．４１は絶縁
薄膜である。
卒２図FIG. 1 is a diagram showing the structure of a conventional O thin film piezoelectric vibrator, (a) a plan view thereof, and (b) a cross-sectional view thereof. FIG. 2 is a diagram showing the structure of the thin film piezoelectric vibrator of the present invention, in which FIG. 2) is a plan view and FIG. 2 is a sectional view thereof. Figure 3 is! FIG. 3 is a cross-sectional view showing a structure in which an insulating thin film is provided on the surface of the thin film piezoelectric vibrator of the present invention shown in IIK. In the above figure, 11.21 is the board, 12, 22 is provided on the board, and 16.2 is provided on the board.
6.27 is an electrode, 31 is a conductive thin film, and 32.41 is an insulating thin film. Graduation 2nd figure
Claims (1)
薄膜が形成され、しかも前記導電性薄膜上の一定の範囲
ＫＦｉ、前記絶縁薄膜が形成されておらず、まえ圧電薄
膜を介して、この絶縁薄膜が形成されていない範囲に対
応する位置に２つの部分電極が形成され、これら２つの
部分電極からそれぞれ電気端子が引き出されており、さ
らに前記基板中で絶縁薄膜が形成されていない範囲に対
応する部分が除去されている構造を特徴とする薄膜圧電
振動子。A conductive thin film, an insulating thin film, and a piezoelectric thin film are sequentially formed on the substrate in the thickness direction, and in a certain range KFi on the conductive thin film, where the insulating thin film is not formed, Two partial electrodes are formed at positions corresponding to the areas where the insulating thin film is not formed, and electrical terminals are drawn out from these two partial electrodes, and furthermore, the areas in the substrate where the insulating thin film is not formed. A thin film piezoelectric vibrator characterized by a structure in which a portion corresponding to the above is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1911482A JPS58137319A (en) | 1982-02-09 | 1982-02-09 | High frequency piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1911482A JPS58137319A (en) | 1982-02-09 | 1982-02-09 | High frequency piezoelectric oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58137319A true JPS58137319A (en) | 1983-08-15 |
Family
ID=11990444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1911482A Pending JPS58137319A (en) | 1982-02-09 | 1982-02-09 | High frequency piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137319A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4737676A (en) * | 1985-12-20 | 1988-04-12 | Avl Gesellschaft Fur Verbrennungskraftmaschinen Und Messtechnik M.B.H. | Transducer with a flexible piezoelectric layer as a sensor element |
| US5373268A (en) * | 1993-02-01 | 1994-12-13 | Motorola, Inc. | Thin film resonator having stacked acoustic reflecting impedance matching layers and method |
| US5596239A (en) * | 1995-06-29 | 1997-01-21 | Motorola, Inc. | Enhanced quality factor resonator |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528663A (en) * | 1978-08-22 | 1980-02-29 | Noto Denshi Kogyo Kk | Piezoelectric oscillation element |
-
1982
- 1982-02-09 JP JP1911482A patent/JPS58137319A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528663A (en) * | 1978-08-22 | 1980-02-29 | Noto Denshi Kogyo Kk | Piezoelectric oscillation element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4737676A (en) * | 1985-12-20 | 1988-04-12 | Avl Gesellschaft Fur Verbrennungskraftmaschinen Und Messtechnik M.B.H. | Transducer with a flexible piezoelectric layer as a sensor element |
| US5373268A (en) * | 1993-02-01 | 1994-12-13 | Motorola, Inc. | Thin film resonator having stacked acoustic reflecting impedance matching layers and method |
| US5596239A (en) * | 1995-06-29 | 1997-01-21 | Motorola, Inc. | Enhanced quality factor resonator |
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