JPS58175314A - Thin film piezoelectric oscillator - Google Patents
Thin film piezoelectric oscillatorInfo
- Publication number
- JPS58175314A JPS58175314A JP3854882A JP3854882A JPS58175314A JP S58175314 A JPS58175314 A JP S58175314A JP 3854882 A JP3854882 A JP 3854882A JP 3854882 A JP3854882 A JP 3854882A JP S58175314 A JPS58175314 A JP S58175314A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- piezoelectric
- si3n4
- piezoelectric vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000000206 photolithography Methods 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 239000000243 solution Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241001504654 Mustela nivalis Species 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は圧電薄膜を用いたＶＨＦ、ＵＨＦ用高周波圧電
圧電子に関するもので、特に非圧電性薄ｌ［部材と圧電
薄膜との組合わせからなる複合構造の振動部位を有する
薄膜圧電振動子に関する−のである〇
一般に数十ＭＨｚ以上のような高い周波数で使用される
圧電振動子は、振動モードとして板面が厚さに比して十
分広い圧電性薄板の厚み振動を使用する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to high-frequency piezovoltaic electronics for VHF and UHF using piezoelectric thin films, and particularly relates to a non-piezoelectric thin film [a vibrating part of a composite structure consisting of a combination of a piezoelectric thin film and a non-piezoelectric thin film]. Regarding thin-film piezoelectric vibrators, piezoelectric vibrators that are generally used at high frequencies of several tens of MHz or higher have thickness vibrations of a piezoelectric thin plate whose plate surface is sufficiently wide compared to its thickness as a vibration mode. use.
厚み振動の共振周波数は圧電性薄板の厚さに反比例する
ので高い周波数で使用する丸めには厚さを薄くしなけれ
ばならないが、厚さが４０建クロン欄度以下になると平
行平面研磨などの加工が非常に困難となる。したがって
バルク圧電結晶或いは圧電セラミックに於ける基本厚み
振動を用い九場合には５０ＭＨｚ以上の圧電振動子を量
産することは困難である。一方、バルク圧電結晶或いは
圧電セラノックの奇数次の高調波厚み振動を使用すれば
同じ厚鼾で基本振動の３倍、５倍、・・・等の共振周波
数が得られ、これはオーバートーン振動子として発１ａ
ｌ１１などに使われている。しかし、第９次０ｉＩｉｌ
Ｉｌ波を用Ａた場合の容量比は基本波の容量比ｒのｎ１
倍となシ、このとき共振周波数と反共振周波数の間隔と
共振周波数との比がほぼ１／（２ｒ１１） となる丸
め、高調波を使ったのではフィルタの比帯域幅或いは発
振量の制御範囲が狭くな夛すぎて実用に適さないことが
多い。The resonant frequency of thickness vibration is inversely proportional to the thickness of the piezoelectric thin plate, so the thickness must be made thinner for rounding that is used at high frequencies, but when the thickness is less than 40 kenron, parallel plane polishing etc. Processing becomes extremely difficult. Therefore, it is difficult to mass-produce piezoelectric vibrators with a frequency of 50 MHz or more using basic thickness vibration in bulk piezoelectric crystals or piezoelectric ceramics. On the other hand, if odd-numbered harmonic thickness vibrations of a bulk piezoelectric crystal or piezoelectric ceranoc are used, a resonance frequency of 3 times, 5 times, etc. of the fundamental vibration can be obtained with the same thickness, and this is an overtone oscillator. As 1a
It is used for l11 etc. However, the 9th 0iIil
When Il wave is used, the capacitance ratio is n1 of the capacitance ratio r of the fundamental wave.
In this case, the ratio of the interval between the resonant frequency and the anti-resonant frequency to the resonant frequency is approximately 1/(2r11), and if harmonics are used, the filter's fractional bandwidth or the control range of the oscillation amount is It is often too narrow and numerous to be suitable for practical use.
振動部分の厚さを薄くして容量比の小さな圧電振動子を
得る方法としては第１．２図の構造の薄膜圧電振動子が
公知である。この薄膜圧電振動子は基板１１の上に半導
体或いは絶縁体の薄膜部側１５を形成した後、エツチン
グによって基板１１に空孔１２を作成し、さらに薄膜部
材１３の上に願に電［ｉ１４、圧電薄膜１５ 電極１６
を形成するととＫより製造するもので、一般に非圧電性
である薄膜部材１５と圧電薄膜１５とからなる複合ダイ
アフラムが周縁部を基板１１によって支持された構造と
なっている０この薄膜圧電振動子は、その振動部分を薄
くできるので、５０ＭＨＸ以上の周波数に於いても基本
振動或いは第２次、第５次などの低次の高調波振動を使
用することが可能であり、し九がってこの薄膜圧電振動
子を用いれば制御範囲の広い発振器或いは広い比帯域の
フィルタを実現することができる。As a method of obtaining a piezoelectric vibrator with a small capacitance ratio by reducing the thickness of the vibrating portion, a thin film piezoelectric vibrator having the structure shown in FIG. 1.2 is known. This thin film piezoelectric vibrator is manufactured by forming a thin film portion 15 of a semiconductor or an insulator on a substrate 11, forming holes 12 in the substrate 11 by etching, and then applying electric current [i14, Piezoelectric thin film 15 Electrode 16
This thin film piezoelectric vibrator is manufactured by K and has a structure in which a composite diaphragm consisting of a thin film member 15, which is generally non-piezoelectric, and a piezoelectric thin film 15 is supported at its peripheral portion by a substrate 11. Because the vibrating part can be made thin, it is possible to use the fundamental vibration or low-order harmonic vibrations such as the 2nd and 5th orders even at frequencies of 50 MHX or more, and therefore By using this thin film piezoelectric vibrator, it is possible to realize an oscillator with a wide control range or a filter with a wide fractional band.
第１図、２図の構造の薄膜圧電振動子において、基板１
１としては一般に表面が（１００）面であるようなシリ
コンが用いられる０なぜならば、エチレンジアミン、ピ
ロカテコール、水からなるエツチング液（以下ＥＤＰ液
という）或いは水酸化カリウム（ＫＯＨ）水溶液を用い
ると、（１００）面のエツチング速度に比較して（１１
１１ｊのエツチング速度が非常に小さいというエツチン
グの異方性を示す丸めに面方向へのエツチングの拡がｐ
が極めて小さく、シ九がって精度嵐く空孔１２０寸法を
制御でＩゐからである。薄膜部材１３としては上記のよ
うなＥＤＰ１１１歳いはＫＯＨ水静液に対してできるだ
けエツチング速度の小さい材料が必要であシ、従来この
目的に適合する材料として種々の酸化物、音化物或いは
ホウ素を高濃度にドープしたシリコンなどの薄膜が提案
されている。圧電前ＷＡ１５として現在のところ信頼性
嵐く作成できる実用的な材料は酸化亜鉛（ＺｎＯ）薄膜
である。In the thin film piezoelectric vibrator having the structure shown in FIGS. 1 and 2, the substrate 1
Silicon having a (100) surface is generally used as 1. This is because when an etching solution (hereinafter referred to as EDP solution) consisting of ethylenediamine, pyrocatechol, and water or an aqueous potassium hydroxide (KOH) solution is used, Compared to the etching speed of (100) plane, (11
11j, the etching rate is very low, which indicates the anisotropy of etching.
This is because the holes 120 are extremely small and the dimensions of the holes 120 can be controlled with great precision. The thin film member 13 needs to be made of a material that has as low an etching rate as possible with respect to EDP 111 or KOH aqueous solution as described above, and conventionally, various oxides, sonic compounds, and boron have been used as materials suitable for this purpose. Thin films of heavily doped silicon and other materials have been proposed. A practical material that can currently be made reliably for piezoelectric WA15 is zinc oxide (ZnO) thin film.
ところで、ＵＨＦ、ＶＨＸｊ″帯の発振器或いはフィル
タでは一般に発振周波数或いは中心周波数の温度による
変化の小さいものが要求されるから、共振周波数の温度
係数の小さい薄膜圧電振動子が必要である。ＺｎＯの弾
性定数の温度係数は一１２０ｐｐｒｒＶ／℃であり、弾
性定数の温度係数が＋２４０ｐｐｍ／’ＣであるＳｉへ
以外の材料は弾性定数が一般にＺｎＯと同 １符号
すなわち負の温度係数を有するところから、従来ＳＳＯ
，を第１図、第２図における薄膜部材１！として用い、
ｚｎＯを圧電薄膜１５として用いた薄膜圧電動子が提案
されており、この振動子ではＳｔＯ，の淳さをＺｎＱの
厚さの１／２とするこにより共振周波数の温度係数は１
０ｐｐｍ／’Ｃ以下となる。By the way, since oscillators or filters in the UHF and VHXj'' bands are generally required to have a small change in oscillation frequency or center frequency due to temperature, a thin film piezoelectric vibrator with a small temperature coefficient of resonance frequency is required.The elasticity of ZnO The constant temperature coefficient is -120 pprrV/°C, and the elastic constant of materials other than Si whose temperature coefficient is +240 ppm/'C is generally the same as ZnO. SSO
, the thin film member 1 in FIGS. 1 and 2! used as
A thin film piezoelectric element using ZnO as the piezoelectric thin film 15 has been proposed, and in this vibrator, by setting the thickness of StO to 1/2 of the thickness of ZnQ, the temperature coefficient of the resonant frequency can be reduced to 1.
It becomes 0 ppm/'C or less.
しかし、従来のＳｉＯ＊１ｉｔ用いた薄膜圧電振動子で
はシ・リコン基板の熱酸化によって形成したＳｉｎ、薄
膜を用いており、このＳｔＯ，薄膜は大きな圧縮応力を
有するため、エツチングによって撮動部分のシリコン基
板を除い走時にこれが破損したりひび割れが生じたりす
ることが多く量産は困−である。まえ、Ｓｉｎ、はＫＯ
Ｈ水溶液に対する耐性が十分でなく、基板のエツチング
液はＥＤＰ液に限られ、この場合、シリコンの（１’
００ ）方向のエツチング速度はＥＤＰ液の沸点におい
ても６０μｍ／）ｉｒと小さく、通常用いられる厚さ３
００μｍ／Ｈｒ程度のシリコン基板の場合は、エツチン
グに５時間を要するため量産には不適当であった。′ｉ
九スパッタリング法或いはＣＶＤ法によって作成し九Ｓ
ｔＯ，薄膜ではＥＤＰ液に対して一針性が不十分であ
り、従来の構造に於いては使用することができなかつ丸
。However, the conventional thin-film piezoelectric vibrator using SiO*1it uses a Si thin film formed by thermal oxidation of a silicon substrate, and since this StO thin film has a large compressive stress, the imaging part is etched. With the exception of silicon substrates, these are often damaged or cracked during running, making mass production difficult. Mae, Sin, is KO
The etching solution for the substrate is limited to EDP solution because of its insufficient resistance to H aqueous solution.
The etching rate in the 00 ) direction is as low as 60 μm/) ir even at the boiling point of the EDP liquid, and the etching rate in the commonly used thickness 3
In the case of a silicon substrate of about 00 μm/Hr, etching takes 5 hours, making it unsuitable for mass production. 'i
Nine S made by nine sputtering method or CVD method
tO, a thin film has insufficient unidirectionality for EDP liquid, and cannot be used in a conventional structure.
本発明の目的は上記のような従来の薄膜圧電振動子の欠
点を除いて横槍的強度が大きく、共振周波数の温度係数
が小さく、かつ量産に適した薄膜圧電振動子を提供する
ことにある。An object of the present invention is to provide a thin film piezoelectric vibrator which has high horizontal strength, a small temperature coefficient of resonance frequency, and is suitable for mass production, while eliminating the drawbacks of the conventional thin film piezoelectric vibrator as described above.
すなわち、本発明は薄膜圧電振動子の振動部分であゐ複
合ダイアフラムを、シリコン會化属で、８１０、膜を間
にはさんだ三層サンドイタチ構造Ｏ薄膜部材と、圧電薄
膜と電極とで構成したことを特徴とするものである。That is, the present invention provides a composite diaphragm, which is a vibrating part of a thin film piezoelectric vibrator, which is made of silicon material and is composed of a three-layer sandwich weasel structure O thin film member with a film sandwiched therebetween, a piezoelectric thin film, and an electrode. It is characterized by the fact that
以下本発明の一実施例を図によって詳細に説明する。
・
第３図、第４図に本発明の薄膜圧電振動子の構造を示す
。図において、３１は表面が（１００）面であるような
シリコン基板、３２はエツチングによって基板に作成し
た空孔であり、３３及び３３′はＳｔ、Ｎ。An embodiment of the present invention will be described in detail below with reference to the drawings.
- Figures 3 and 4 show the structure of the thin film piezoelectric vibrator of the present invention. In the figure, 31 is a silicon substrate whose surface is a (100) plane, 32 is a hole created in the substrate by etching, and 33 and 33' are St, N.
薄膜、３４は８１０１薄膜、３５は下地電極、５６はＺ
ｎ０１１膜、！Ｉ７は上部電極である。一般にＣＶＤ法
で作成し九、８１ Ｈａ薄膜は引張応力を有し、スパッ
タリング法で作成した８１０１薄膜は圧縮応力を有する
からＳｔＯ，薄膜を５ｔｈｌＩＮ４薄膜ではさんだ三層
サンドイッチ構造の薄膜部材に構成することにより応力
は軽減されしたがってエツチングによって空孔３２を作
成し走時に従来の構造と違って薄膜部材が破損したり、
ひび割れが生じることはない。さらに８１１Ｎ４薄膜は
ＫＯＨ水溶液によってまったくエツチングされないから
、シリコン基板のエツチングにＫＯＨ水ＩＩ液を使用す
ることができる。ＫＯＨ水Ｓ液でのシリコンの（１００
）方向のエツチング速度は沸点において約３００μｍ／
Ｈｒと大きく、ＥＤＰ液の場合の５倍の速さでエツチン
グ可能である。したがりて本発明では従来の構造に比べ
て基板のエツチングＫＷする時間は１１５とな詐、その
工業的価値は多大であんナオ、薄ＷＬ５５．３５’トシ
テは５ｌｓＮＪｌｉｌＫ＠らず、プラズマＣＶＤ法によ
って作成し九８ｉＮ薄膜など一般にシリコン窒化膜と称
される薄膜が使用できる。Thin film, 34 is 8101 thin film, 35 is base electrode, 56 is Z
n011 membrane! I7 is the upper electrode. In general, the 9,81 Ha thin film created by the CVD method has tensile stress, and the 8101 thin film created by the sputtering method has compressive stress. Therefore, it is necessary to construct a thin film member with a three-layer sandwich structure in which the StO thin film is sandwiched between 5thlIN4 thin films. Therefore, the stress is reduced by etching, and the holes 32 are created by etching, so that unlike the conventional structure, the thin film member is damaged during running.
No cracks will occur. Furthermore, since the 811N4 thin film is not etched at all by KOH aqueous solution, KOH aqueous II solution can be used for etching silicon substrates. of silicon in KOH water S solution (100
) direction is approximately 300 μm/
The etching speed is 5 times faster than that of EDP liquid. Therefore, in the present invention, the time required for etching the substrate is 115 KW compared to the conventional structure, and its industrial value is enormous. A thin film generally called a silicon nitride film, such as a 98iN thin film, can be used.
以下に本発明の実施例について具体的に説明する０
（実施例）
表面がＺｏｏ）面であるような厚さ３００１１ｍのシリ
コ７基板の裏面にＣＶＤ法で１０００Ａ４０８１〜４薄
膜を形成し、基板に空孔を形成する部分の８１ 、Ｎ４
薄膜にウィンドウを作成しえ。次にシリコン基板の表面
に、ｌ［ＫｚｏｏｏＡの８１ａＮ４薄膜、５７７ｍの８
１ ｌＮ４薄凰２０００λのｓ ｔ 、Ｎ４薄膜を形成
した。なお、Ｓｌ＊Ｎ４薄膜はＣＶＤ法で、引０．薄膜
はスパッタリング法で形成し九。Examples of the present invention will be specifically described below.0 (Example) A 1000A4081-4 thin film was formed by CVD on the back surface of a 30011 m thick silicon 7 substrate whose surface was a Zoo surface, and 81, N4 in the part forming the pores
Create a window in the thin film. Next, on the surface of the silicon substrate, l[KzoooA's 81aN4 thin film, 577m of 8
An N4 thin film was formed with a s t of 1 lN4 thin film and 2000λ. Note that the Sl*N4 thin film was produced using the CVD method with a tensile strength of 0. The thin film was formed using a sputtering method.
以上の処−を行な−）九シリコン基板をｌｏ％ＫＯＨ水
溶液で１１５℃の沸点に於いて１時間エツチングして基
板に裏面から空孔を形成した。直径Ｓｏｗのシリコン基
板の中に、合計５０個の空孔を形成したが、空孔上部の
５ｉｓＮ４ ＳｉＯ鵞−８ｉ 、Ｎ４からなる薄膜部
材はどの空孔部分に於いても破損したりひび割れが発生
したシすることはなかった。次に表面にＣｒを下地にし
てＡｕを蒸着し、フォトリソグラフィによって下地電極
を形成した後、スパッタリング法で６句のＺｎＯ薄膜を
形成し、さらＫＺｎＯ薄膜の上にリフトオフによってＡ
ｔの上部電極を形成した。以上の１榔によって第５図、
４図に示し、た構造の薄膜圧電振動子を製造した。この
薄膜圧電振動子を、−２０℃から６０℃で共振周波数を
制定したところ室温での共振周波数は！５８０ＭＨｚ、
共振周波数の温度係数は一５ｐｐｍ、／’Ｃであシ、温
度係数の小さい薄膜圧電振動子が実現できた。After carrying out the above process, the silicon substrate was etched with a lo% KOH aqueous solution at a boiling point of 115 DEG C. for 1 hour to form holes in the substrate from the back surface. A total of 50 holes were formed in a silicon substrate with a diameter of So, but the thin film member made of 5isN4SiO-8i and N4 above the holes was damaged or cracked in any hole part. There was nothing to do. Next, Au was vapor-deposited on the surface using Cr as a base, and a base electrode was formed by photolithography. After that, six ZnO thin films were formed by sputtering, and then A was deposited on top of the KZnO thin film by lift-off.
The upper electrode of t was formed. Figure 5, based on the above 1.
A thin film piezoelectric vibrator having the structure shown in Fig. 4 was manufactured. When we established the resonant frequency of this thin film piezoelectric vibrator from -20°C to 60°C, what was the resonant frequency at room temperature? 580MHz,
The temperature coefficient of the resonance frequency was -5 ppm, /'C, and a thin film piezoelectric vibrator with a small temperature coefficient was realized.
以上のように本発明の薄膜圧電振動子は、共振周波数の
温度係数が１０ｐｐｍ／’Ｃ以下で、機械的強度に優れ
ており、しかも短時間で歩留り曳く製造することができ
る。したがって本発明によれば共振周波数の温度係数が
小さい薄膜圧電振動子を量産できる効果を有するもので
ある。As described above, the thin film piezoelectric vibrator of the present invention has a temperature coefficient of resonance frequency of 10 ppm/'C or less, has excellent mechanical strength, and can be manufactured in a short time with high yield. Therefore, according to the present invention, thin film piezoelectric vibrators having a small temperature coefficient of resonance frequency can be mass-produced.
第１図、２図は従来の薄膜圧電振動子の構造１示す図で
あり、第１図は平面図、第２図は断面弧ｊｌｓ図、４図
は本発明の薄膜圧電振動子の構造を示す図であり、第３
図は平面図、＃Ｉ４図は断面図である。
３１はシリコン基板、３２はエツチングによって基板に
形成し圧空孔、５３及び５５′は８１１Ｎ４薄ＩＬ
５４は５１０１薄膜、３５は下地電極、３６はＺｎＯ薄
膜、ｌ５７Ｆｉ上部電極である。
第１図
５
蔦２図
＼
第３図
Ｊ６
ｉＩ！Ｊ４図
手続補正書（−船
５８．５．２、
特許庁長官 殿
１、事件の表示 昭和５７年 特 許 願第ｏｓｓ
ｓ４ｓ号２、発明の名称 薄膜圧電振動子
３、補正をする者
事件との関係 出 願 人東京都港区芝五
丁目３３番１号
（４２３） 日本電気株式会社
代表者 関本忠弘
４、代理人
１８嘔；
５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の自答
（１）明細書第５頁第１９行目Ｋ「ＥＤＰ法」とあるの
をｊ−ＥＤＰ液」と補正する。
（２）明細書第６ｊｊ第１６行目に「５１ｍＮａ Ｊ
とあるのを［５ｉｓＮＪと補正する。
（３）明細書第８頁第４行目［［３声真の８１１Ｎ、薄
膜］とあるのを「３μ罫の５ｌｏｔ薄膜」と補正する。
、（理）、弁理士 内原Figures 1 and 2 are diagrams showing the structure 1 of a conventional thin film piezoelectric vibrator, where Figure 1 is a plan view, Figure 2 is a cross-sectional arc jls diagram, and Figure 4 shows the structure of the thin film piezoelectric vibrator of the present invention. This is a diagram showing the third
The figure is a plan view, and #I4 is a sectional view. 31 is a silicon substrate, 32 is a pressure hole formed in the substrate by etching, and 53 and 55' are 811N4 thin ILs.
54 is a 5101 thin film, 35 is a base electrode, 36 is a ZnO thin film, and 157Fi upper electrode. Figure 1 5 Ivy 2 Figure 3 J6 iI! J4 figure procedural amendment (-Vessel 58.5.2, Director General of the Patent Office 1, Indication of the case 1981 Patent Application No. oss
s4s No. 2, Title of the invention: Thin film piezoelectric vibrator 3, Relationship to the amended case: Applicant: 5-33-1 Shiba, Minato-ku, Tokyo (423) NEC Corporation Representative: Tadahiro Sekimoto 4, Agent 18 O; 5. Detailed explanation of the invention in the specification subject to amendment 6, Self-answer for amendment (1) Page 5, line 19 of the specification, K "EDP method" should be replaced with "J-EDP liquid" and correct it. (2) In the specification No. 6jj, line 16, “51mNa J
The statement has been corrected to [5isNJ. (3) In the 4th line of page 8 of the specification, [[3-voice true 811N, thin film] is corrected to "5 lots of thin film with 3μ lines". (Science), Patent Attorney Uchihara
Claims (1)
合ダイヤフラムを基板上に支持させ、＃非圧電薄膜部材
を５ｉ０２薄膜と、その上下をはさんだ／リコｙｉｌ化
膜との三層サントイブチ構造としたことを特徴とする薄
膜圧電振動子。(1) A composite diaphragm consisting of a non-piezoelectric thin film member, a piezoelectric thin film, and an electrode is supported on a substrate, and the #nonpiezoelectric thin film member has a three-layer structure with a 5i02 thin film and a lyco-yilized film sandwiching the top and bottom of the non-piezoelectric thin film member. A thin film piezoelectric vibrator characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3854882A JPS58175314A (en) | 1982-03-11 | 1982-03-11 | Thin film piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3854882A JPS58175314A (en) | 1982-03-11 | 1982-03-11 | Thin film piezoelectric oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175314A true JPS58175314A (en) | 1983-10-14 |
| JPH0365046B2 JPH0365046B2 (en) | 1991-10-09 |
Family
ID=12528339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3854882A Granted JPS58175314A (en) | 1982-03-11 | 1982-03-11 | Thin film piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175314A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
| EP0976560A3 (en) * | 1998-07-29 | 2000-05-10 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus comprising the same |
| EP1152475A1 (en) * | 1999-11-11 | 2001-11-07 | Mitsubishi Denki Kabushiki Kaisha | Thin-film piezoelectric device |
| WO2004105237A1 (en) * | 2003-05-26 | 2004-12-02 | Murata Manufacturing Co., Ltd. | Piezoelectric electronic component, and production method therefor, communication equipment |
| EP2066027A1 (en) * | 2006-08-25 | 2009-06-03 | Ube Industries, Ltd. | Thin film piezoelectric resonator and method for manufacturing the same |
| US7793395B2 (en) | 2003-10-08 | 2010-09-14 | Samsung Electronics Co., Ltd. | Method for manufacturing a film bulk acoustic resonator |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3514224B2 (en) * | 1999-11-11 | 2004-03-31 | 株式会社村田製作所 | Piezoelectric resonator, filter and electronic device |
| JP3514222B2 (en) * | 1999-11-17 | 2004-03-31 | 株式会社村田製作所 | Piezoelectric resonator, electronic components and electronic equipment |
| JP4557356B2 (en) * | 2000-03-29 | 2010-10-06 | 京セラ株式会社 | Piezoelectric resonator |
| JP3984441B2 (en) * | 2001-07-26 | 2007-10-03 | 松下電器産業株式会社 | Piezoelectric thin film vibrator and filter |
-
1982
- 1982-03-11 JP JP3854882A patent/JPS58175314A/en active Granted
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
| EP0976560A3 (en) * | 1998-07-29 | 2000-05-10 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus comprising the same |
| US6502928B1 (en) | 1998-07-29 | 2003-01-07 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus comprising the same |
| EP1152475A1 (en) * | 1999-11-11 | 2001-11-07 | Mitsubishi Denki Kabushiki Kaisha | Thin-film piezoelectric device |
| EP1152475A4 (en) * | 1999-11-11 | 2007-02-21 | Mitsubishi Electric Corp | Thin-film piezoelectric device |
| WO2004105237A1 (en) * | 2003-05-26 | 2004-12-02 | Murata Manufacturing Co., Ltd. | Piezoelectric electronic component, and production method therefor, communication equipment |
| US7342351B2 (en) | 2003-05-26 | 2008-03-11 | Murata Manufacturing Co., Ltd. | Piezoelectric electronic component, and production method therefor, and communication equipment |
| US8123966B2 (en) | 2003-05-26 | 2012-02-28 | Murata Manufacturing Co., Ltd. | Piezoelectric electronic component, process for producing the same, and communication apparatus |
| US7793395B2 (en) | 2003-10-08 | 2010-09-14 | Samsung Electronics Co., Ltd. | Method for manufacturing a film bulk acoustic resonator |
| EP2066027A1 (en) * | 2006-08-25 | 2009-06-03 | Ube Industries, Ltd. | Thin film piezoelectric resonator and method for manufacturing the same |
| EP2066027A4 (en) * | 2006-08-25 | 2010-02-17 | Ube Industries | Thin film piezoelectric resonator and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0365046B2 (en) | 1991-10-09 |
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