JPS5831594A - Photo semiconductor device - Google Patents
Photo semiconductor deviceInfo
- Publication number
- JPS5831594A JPS5831594A JP56129403A JP12940381A JPS5831594A JP S5831594 A JPS5831594 A JP S5831594A JP 56129403 A JP56129403 A JP 56129403A JP 12940381 A JP12940381 A JP 12940381A JP S5831594 A JPS5831594 A JP S5831594A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photocoupler
- resin
- emitting element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、同一ノ’？ツヶージ内に少なくとも二つ以
上のホトカプラをもつ光半導体装置において、いずれの
発光素子よシ出る光も他の動作回路にもれないようにし
た光半導体装ＩＩＫ関する。[Detailed Description of the Invention] Is this invention the same? The present invention relates to an optical semiconductor device IIK in which light emitted from any light emitting element is prevented from leaking into other operating circuits in an optical semiconductor device having at least two or more photocouplers in a package.
第１図は従来のホトカプラを同一ノぐツヶージ内に集積
化した構造の光半導体装置を示すものであシ、第１図（
４）は蓋の部分を取り除いたｔ４ツケージの平面図であ
シ、第１図（２）は第１図囚のＸｓ −Ｌ機に沿って切
断して示す断面図であ多、蓋を含めて示している。Figure 1 shows an optical semiconductor device with a structure in which conventional photocouplers are integrated in the same node.
4) is a plan view of the T4 cage with the lid removed, and Figure 1 (2) is a sectional view taken along the Xs-L machine shown in Figure 1, including the lid. It shows.
この第１＠（２）、第１図（６）の両図において、ノ母
ツケージ基板１は壁２によって分離された凹部３゜４を
有する構造であり、この凹部３，４に発光素子５，６を
搭載し、その上部に発光素子７．８を搭載している。In both figures 1@(2) and 1(6), the base cage substrate 1 has a structure having a recess 3°4 separated by a wall 2, and a light emitting element 5 is placed in the recess 3, 4. , 6, and a light emitting element 7.8 is mounted on top of it.
また、発光素子５と受光素子７とによシ第１ホトカグラ
全形成し、発光素子６と受光素子８とにより、第２ホト
カプラを形成している。Further, the light emitting element 5 and the light receiving element 7 form a first photocoupler, and the light emitting element 6 and the light receiving element 8 form a second photocoupler.
９は受光素子８の電極を示し、パンケージ導体層９′に
接続されている。また、発光素子６の電極１ｏＦｉｚｆ
ツク一ジ導体１０’に接続されてしる。これらのパッケ
ージ導体９’ 、 １０’は外部リード端子１１に接続
されている。なお、１２は着である。Reference numeral 9 indicates an electrode of the light receiving element 8, which is connected to the pan cage conductor layer 9'. In addition, the electrode 1oFizf of the light emitting element 6
It is connected to a single conductor 10'. These package conductors 9', 10' are connected to external lead terminals 11. In addition, 12 is the arrival.
この第１図囚、第１図［Ｆ］）に示す従来の光半導体装
置では、発光素子５と受光素子７、発光素子６と受光素
子８がそれぞれ独立して第１、第２のホトカシ−）ｔ−
形成し、発光素子５または６に電Ｒｔ−流して発光させ
、その光を受光素子７または８で受けて電流に変換する
。In the conventional optical semiconductor device shown in FIG. 1 [F] and FIG. )t-
A current Rt is applied to the light emitting element 5 or 6 to cause it to emit light, and the light is received by the light receiving element 7 or 8 and converted into an electric current.
この光を電流に変換する変換効率を向上させるには、発
光素子５または６と受光素子７または８０間に半溶解状
態の透明樹脂を注入することにょシ向上させることがで
きる。そして、凹部３，４の隙間１３より透明樹脂１４
′ｆｔ注入して、凹部を透明樹脂１４で充満させること
Ｋよシ、変換効率を大幅に向上させることができる。The conversion efficiency of converting this light into electric current can be improved by injecting a semi-dissolved transparent resin between the light emitting element 5 or 6 and the light receiving element 7 or 80. Then, from the gap 13 between the recesses 3 and 4, the transparent resin 14
By filling the recess with the transparent resin 14 by injecting the transparent resin 14, the conversion efficiency can be significantly improved.
しかしながら、隣接する第１ホトカプラの凹部３と゛第
２ホトカノラの凹部４を透明樹脂１４で充満させるには
、受光素子７と８の周辺にも透明樹脂１４が盛シ上がる
ように注入する必要がある。However, in order to fill the adjacent recess 3 of the first photocoupler and the recess 4 of the second photocanola with the transparent resin 14, it is necessary to inject the transparent resin 14 so that it rises around the light receiving elements 7 and 8 as well. .
このように、凹部３，４よシ盛シ上がった透明樹脂１４
は両凹部３．４ｆ：分離している壁２の上部にて連なっ
た透明極脂１４′が存在する領域が形成される。このよ
うな状態の透明樹脂１４の存在する領域を斜線にして示
している。In this way, the transparent resin 14 has risen above the recesses 3 and 4.
Both concave portions 3.4f: A region where a continuous transparent polar resin 14' exists is formed at the upper part of the separated wall 2. The area where the transparent resin 14 in such a state exists is indicated by diagonal lines.
このような状態で、凹部３の発光素子５４ＣＩＥｆｆｔ
６ｔして発光させると、受光素子７に光が照射される以
外に壁２の上部に連なつ九透明樹脂１４′ヲ通して隣接
する凹部４に４１光が伝わり、＠接する受光素子８にも
光が照射される状態になり、完全に独立したホトカプラ
であるべきものが、＠接する他のホトカプラの受光素子
のリーク電流を増大させたり、ＩＣ４ｍＩ作させる欠点
を有することになる。In this state, the light emitting element 54CIEfft of the recess 3
When the light is emitted at 6t, in addition to the light being irradiated onto the light receiving element 7, the light is also transmitted to the adjacent recess 4 through the transparent resin 14' connected to the upper part of the wall 2, and is also transmitted to the adjacent light receiving element 8. When light is irradiated, what should be a completely independent photocoupler has the drawback of increasing the leakage current of the light receiving element of the other photocoupler in contact with it, or causing IC4mI to operate.
この発明は、上記従来の欠点を除去するためになされた
もので、それぞれのホトカプラを形成する発光素子、受
光素子を他の発光素子、受光素子と完全に分離し、発光
素子よシ出る光がその動作回路に漏洩しないようにでき
る光半導体装置を提供することを目的とする。This invention was made in order to eliminate the above-mentioned conventional drawbacks, and it completely separates the light-emitting element and light-receiving element forming each photocoupler from other light-emitting elements and light-receiving elements, so that the light emitted from the light-emitting element is It is an object of the present invention to provide an optical semiconductor device that can prevent leakage to its operating circuit.
以下、この発明の光半導体装置の実施例について図面に
基づき説明する。第２図（４）はその一実施例の構成を
示す平面図であシ、蓋の部分を取り除いた状態を示して
いる。また、第２図の）＃′ｉ第２図（４）のＸｓ −
Ｘ４ ｍに宿って切断して示す断面図であり、この第２
図■の場合はｉｔ含んた状態金示している。Embodiments of the optical semiconductor device of the present invention will be described below with reference to the drawings. FIG. 2 (4) is a plan view showing the structure of one embodiment, with the lid removed. Also,)#'i in Fig. 2Xs - in Fig. 2 (4)
This is a cross-sectional view taken at X4 m, and this second
In the case of figure ■, the state money including IT is shown.
第２図（４）、第２図（８）において、重複を避けるた
めに、第１図（４）、第１図（砂と同一部分には同一符
号を付してその説明を省略する。この第２図（４）、第
２図０３）を第１図（至）、第１図（砂と比較しても明
らかなように、符号１から１４までの部分は第１図面、
第１図［Ｆ］）と全く同様である。In FIG. 2 (4) and FIG. 2 (8), in order to avoid duplication, the same parts as those in FIG. 1 (4) and FIG. As can be seen by comparing this Fig. 2 (4), Fig. 2 03) with Fig. 1 (to) and Fig. 1 (sand), the parts from 1 to 14 are shown in Fig. 1,
It is exactly the same as FIG. 1 [F]).
この発明は従来の光半導体装置において、凹部３．４に
透明樹脂１４′ｔ−注入した後に、直ちに凹部３，４ｔ
−分離している壁２の上部に迩へい物として、光の透過
しない半溶融状態の不透明樹脂、たとえば、黒樹脂１５
を充填することにより、第１図（ト）、第１図（Ｂｌで
形成される壁２の上部にてつながった透明樹脂１４′が
存在する領域に光を透過しない不透明樹脂（黒樹脂）１
５を付着させることができる。In the conventional optical semiconductor device, the present invention is such that immediately after injecting the transparent resin 14't into the recesses 3.4,
- A semi-molten opaque resin that does not transmit light, such as black resin 15, is added to the upper part of the separating wall 2.
By filling the opaque resin (black resin) 1 that does not transmit light into the area where the transparent resin 14' connected at the top of the wall 2 formed by Bl is present, as shown in FIG.
5 can be attached.
このような構造では、凹部３の発光素子５に電流を流し
て発光させても、受光素子７に光が照射されるのみで、
１１２の上部より伝わる光は光を透過しない不透明樹脂
（黒樹脂）１５の存在によって連断され、従来の光半導
体装置のように隣接する第２ホトカグラの凹部４に光が
伝わることがないため、隣接する他のホトカプラの受光
素子のリーク電Ｒｔ−増大させたプ、誤動作させる欠点
をなくすることができる。In such a structure, even if a current is applied to the light-emitting element 5 in the recess 3 to cause it to emit light, the light is only irradiated onto the light-receiving element 7;
The light transmitted from the upper part of the photoconductor 112 is interrupted by the presence of the opaque resin (black resin) 15 that does not transmit light, and unlike the conventional optical semiconductor device, the light does not transmit to the concave portion 4 of the adjacent second photoconverter. It is possible to eliminate the disadvantage of increased leakage current Rt of the light receiving element of another adjacent photocoupler and malfunction.
以上のように、この発明の光半導体装置によれば、パッ
ケージ内に２以上のホトカプラを有する光半導体装置に
おいて、それぞれのホトカプラを分離している壁２の上
部に光を透過させない不透明樹脂（黒樹脂）ｔ−充填さ
せることにょシ、それぞれのホトカプラを形成する発光
素子、受光素子を他の発光素子、受光素子と完全に分離
することができ、発光素子よシ出る光がその動作回路以
外にもれないようにすることができる。As described above, according to the optical semiconductor device of the present invention, in an optical semiconductor device having two or more photocouplers in a package, the upper part of the wall 2 separating each photocoupler is made of opaque resin (black) that does not transmit light. By filling the resin), the light-emitting element and light-receiving element that form each photocoupler can be completely separated from other light-emitting elements and light-receiving elements, and the light emitted from the light-emitting element can be transmitted to sources other than its operating circuit. You can prevent it from leaking.
これにともない、他の受光素子の誤動作を少なくするこ
とができるはかシか、発光素子の光の周囲への発散を防
止させて同一ホトカプラ内の光変換効率を高めることが
でき、パッケージ内に２以上のホトカプラを搭載される
光半導体装置に利用することができる、Along with this, it is possible to reduce the malfunction of other light-receiving elements, or to prevent the light of the light-emitting element from dispersing into the surroundings, increasing the light conversion efficiency within the same photocoupler. Can be used in optical semiconductor devices equipped with two or more photocouplers,
第１図（至）は従来の光半導体装置の蓋を取シ除いた状
態での平面図、第１図（９は第１９囚のＬ −Ｘｓ線に
浜って切断して蓋を含め良状態の断面図、第２９囚はこ
の発明の光半導体装置の一実施例の蓋を取シ除いた状態
の平面図、第２図色）は第２９囚におけるＸ５−Ｌ１ｌ
Ｋ？Ｅｊって切断して蓋を含めた状態の断面図である＠
ｌ・・り臂ツケージ基体、２・・・壁、３，４・・・凹
部、５．６・・・発光素子、７，８・・・受光素子、９
・・・発光素子電極、ｌＯ・・・受光素子電極、９’
、 １０’・・・・々ツケージ導体、１１・・・外部リ
ード端子、１２・・・着、１３・・・隙間、１４．１４
’・・・透明樹脂、１５・・・不透明樹脂。
特許出願人 沖電気工業株式会社
手続補正書
昭和６θ年１２月１６日
特許庁長官島田春樹 殿
１、事件の表示
昭和５６年特 許 願第 １！９４０８ 号２、 ＠
＠ｔ）名称
ＪＲ，半導体装置
３、補正をする者
事件との関係 轡 許 出願人（０２９）沖電
気工業株式金社
４、代理人
５、補正命令の日付 昭和 年 月 日（自発
）６、補正の対象
明細書ｏ＊ｖｓｏｐｔｓな説明および図画Ｏ簡単なａｍ
！ｍＣＪ会欄
７１ｍ正の内容
１）明細書２頁７行「発光素子」を「受光素子」と訂正
する。
２）同７頁８行「９・・・発光」を「９・・・受光」と
訂正する。
３）同７頁９行「１０・・・受光」を「１０・・・発光
］と訂正する。Figure 1 (to) is a plan view of a conventional optical semiconductor device with the lid removed. A cross-sectional view of the state, Figure 29 is a plan view of an embodiment of the optical semiconductor device of the present invention with the lid removed, Figure 2 (color) is X5-L1l in Figure 29.
K? Ej is a cross-sectional view of the state in which the lid is included. 8... Light receiving element, 9
... Light emitting element electrode, lO... Light receiving element electrode, 9'
, 10'...Cage conductor, 11...External lead terminal, 12...Archive, 13...Gap, 14.14
'... Transparent resin, 15... Opaque resin. Patent Applicant Oki Electric Industry Co., Ltd. Procedural Amendment December 16, 1980 Haruki Shimada, Commissioner of the Patent Office 1, Indication of Case 1982 Patent Application No. 1!9408 2, @
@t) Name JR, Semiconductor device 3, Relationship with the case of the person making the amendment Applicant (029) Oki Electric Industry Co., Ltd. Kinsha 4, Agent 5, Date of amendment order Showa year, month, day (voluntary) 6, Specification subject to amendment o * vsopts explanation and drawings o simple am
! mCJ meeting column 71m Correct contents 1) "Light emitting element" in line 7 on page 2 of the specification is corrected to "light receiving element". 2) On page 7, line 8, "9...light emission" is corrected to "9...light reception". 3) On page 7, line 9, "10...light reception" is corrected to "10...light emission".
Claims (2)
隣接して配置された複数のホトカプラと、このホトカプ
ラからの漏洩光をさえぎるためＫこのホトカグ２間を仕
切るように配置された遮へい物とからなることを特徴と
する光半導体装置。(1) From the arm cage base, a plurality of photocouplers arranged adjacently within this package base, and a shield placed so as to partition between the two photocouplers in order to block light leaking from the photocouplers. An optical semiconductor device characterized by:
する特許請求の範囲第１項記載の光半導体装置。(2) The optical semiconductor device according to claim 1, wherein the shield is made of an opaque resin material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56129403A JPS5831594A (en) | 1981-08-20 | 1981-08-20 | Photo semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56129403A JPS5831594A (en) | 1981-08-20 | 1981-08-20 | Photo semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831594A true JPS5831594A (en) | 1983-02-24 |
| JPS6244871B2 JPS6244871B2 (en) | 1987-09-22 |
Family
ID=15008689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56129403A Granted JPS5831594A (en) | 1981-08-20 | 1981-08-20 | Photo semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831594A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0276855U (en) * | 1988-11-30 | 1990-06-13 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5185387A (en) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
| JPS53123690A (en) * | 1977-04-04 | 1978-10-28 | Tooru Koide | Electric signal coupler and display unit |
| JPS54890A (en) * | 1977-06-03 | 1979-01-06 | Mitsubishi Electric Corp | Light-coupled semiconductor device |
-
1981
- 1981-08-20 JP JP56129403A patent/JPS5831594A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5185387A (en) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
| JPS53123690A (en) * | 1977-04-04 | 1978-10-28 | Tooru Koide | Electric signal coupler and display unit |
| JPS54890A (en) * | 1977-06-03 | 1979-01-06 | Mitsubishi Electric Corp | Light-coupled semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0276855U (en) * | 1988-11-30 | 1990-06-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244871B2 (en) | 1987-09-22 |
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