JPS5831540A - Manufacture of hybrid integrated circuit - Google Patents

Manufacture of hybrid integrated circuit

Info

Publication number
JPS5831540A
JPS5831540A JP12967781A JP12967781A JPS5831540A JP S5831540 A JPS5831540 A JP S5831540A JP 12967781 A JP12967781 A JP 12967781A JP 12967781 A JP12967781 A JP 12967781A JP S5831540 A JPS5831540 A JP S5831540A
Authority
JP
Japan
Prior art keywords
resin
circuit
hybrid integrated
synthetic resin
circuit surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12967781A
Other languages
Japanese (ja)
Inventor
Toshiro Sasamoto
笹本 敏郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12967781A priority Critical patent/JPS5831540A/en
Publication of JPS5831540A publication Critical patent/JPS5831540A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To prevent a resin from oozing out through the boundaries between circuit surface end parts and external leads in the process for coating an element circuit surface with a resin, by dropping a synthetic resin while properly heating external lead terminal parts of the circuit. CONSTITUTION:External lead terminals 2 of a hybrid integrated circuit 1 are horizontally placed on bot plates 3 heated up to 100 deg.C, for example. After the element 1 is left as it is so that the lead-side end surfaces will be heated to 50-60 deg.C, a proper amount of a flowable low-viscosity synthetic resin 4, e.g., silicone resin KE1212ABC is dropped onto the central part of the circuit surface and left as it is for about 2-3 minutes until spreading all over the circuit surface. Since the temperature distribution is such that the ends of the circuit including the external leads are high in temperature, the flowage of the resin stops at the substrate end surfaces of the circuit element, and also there is no possibility of oozing out of the resin through the external leads and the bonding parts between the same and the element. Any flowable low-viscosity LTV type synthetic resin can be employed as the resin. Moreover, the required heating temperature is only 40-150 deg.C.

Description

【発明の詳細な説明】 本発IjII社樹脂封止され九混成集積回路の製造方法
にかかり特に骸混成集積回路表面を流動性低粘度合成樹
脂で再現性よく被覆する方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a hybrid integrated circuit sealed with resin by IjII Co., Ltd., and particularly relates to a method for coating the surface of a hybrid integrated circuit with a fluid, low-viscosity synthetic resin with good reproducibility.

混成集積回路は薄膜集積回路や厚膜集積回路で代表され
るようにガラス、アルミナセラミック等の絶縁基板上に
スパッタ法あるいはスクリーン印刷法によシ、導電体層
、抵抗体層、コンデンサ等の回路要素からなるパターン
を形成し一゛更にパターンの所要の位置に半導体素子を
接合したひとつの電気回路を構成し、最後に回路に充分
な耐候性と機械的強度をもたせる為に樹脂等で封止して
いるのが通例である。
Hybrid integrated circuits are represented by thin-film integrated circuits and thick-film integrated circuits, in which circuits such as conductor layers, resistor layers, capacitors, etc. are printed on an insulating substrate such as glass or alumina ceramic by sputtering or screen printing. A pattern consisting of elements is formed, and then semiconductor elements are bonded to the required positions of the pattern to form an electrical circuit, and finally the circuit is sealed with resin etc. to give it sufficient weather resistance and mechanical strength. It is customary to do so.

一般に混成集積回路の封止方法としては表面被覆法、ボ
ッティング法、キャスティング法、トランス7アーモー
ルド法等が用いられているか作業の簡便性と経済性の面
から最近では表面被覆法が多用されるようになっている
。この表面被覆法は、回路領域上の機械的又は化学的保
護を向上させる為に、混成集積回路の回路表面だけに流
動性のあるシリコーン又はエポキシ機脂勢の合成樹脂で
被覆したものである。一般には、この方法は次の様にし
て行表われる。即ち、水平に置かれた混成集積回路の回
路表面に流動性の良好な合成樹脂を適量だけディスペン
サー又は注射器等を用いて点滴し、樹脂のもつ流動性を
利用して外部リードの接合部を含めて回路表面に隅々逸
流し、回路表面上に所定の厚さに樹脂を被覆する方法で
ある。仁の方法は表面張力管利用したもので、樹脂は回
路の端間では適当な接触角をもって止まるが、外部リー
ドの取シ出し側端面ではこの効果は小さく、シばしば外
部リードと回路面ランドとの境界を通って滲み出ること
が常で6つ友。その為、樹脂は回路裏面に廻シ込んだり
外部リードに沿って流れ出九りして外観上は勿論のこと
電気的性能においても支障をきたし種々の修正を施す必
要があった。
In general, surface coating methods, botting methods, casting methods, transformer molding methods, etc. are used as sealing methods for hybrid integrated circuits.Recently, surface coating methods are often used due to the ease of work and economic efficiency. It has become so. In this surface coating method, only the circuit surface of a hybrid integrated circuit is coated with a flowable silicone- or epoxy-based synthetic resin to improve mechanical or chemical protection on the circuit area. Generally, this method is performed as follows. That is, an appropriate amount of synthetic resin with good fluidity is dripped onto the circuit surface of a hybrid integrated circuit placed horizontally using a dispenser or syringe, and the fluidity of the resin is used to cover the joints of external leads. In this method, the resin is poured onto every corner of the circuit surface to coat the circuit surface with a predetermined thickness. Jin's method uses a surface tension tube, and the resin stops with an appropriate contact angle between the ends of the circuit, but this effect is small at the end of the external lead from which it is taken out, and often the surface of the external lead and the circuit surface are small. It always oozes out through the boundary with Rand, and it is a six-friend. As a result, the resin creeps into the back side of the circuit or flows out along the external leads, causing problems not only in appearance but also in electrical performance, necessitating various modifications.

従来ではこの解決策として(1)回路面に塗布する樹脂
量を極力減少して外部リード又はリード側端面への樹脂
の流れを少なくする、■)樹脂に多量のチクソトロピー
材を添加して流れを押える、等が検討されたが、逆に樹
脂が少ないと、耐候性が悪化したシ、リード又はリード
側端面への樹脂の流れは止められるが、回路全面に被J
igを形成するの樹脂を人為的に伸ばす必要が生じたり
して、信頼性作業性の面で不都合でありた。
Conventionally, the solutions to this problem were to (1) reduce the amount of resin applied to the circuit surface as much as possible to reduce the flow of resin to the external lead or lead side end face, and (2) add a large amount of thixotropic material to the resin to reduce the flow. However, if there was too little resin, the weather resistance would deteriorate, and although the flow of resin to the leads or the end face of the leads could be stopped, the entire surface of the circuit would be exposed to JJ.
It is necessary to artificially stretch the resin forming the ig, which is disadvantageous in terms of reliability and workability.

本発明は上記問題点を解決することのできる混成集積回
路の製造方法を提供せんとするものである。
The present invention aims to provide a method for manufacturing a hybrid integrated circuit that can solve the above problems.

即ち、本発明は混成集積回路の素子回路面に樹脂を被覆
する工程において、蚊回路の外部リード端子部を加熱せ
しめ良状態で該合成樹脂を滴下せしめることを特徴とす
る。そして好ましくは40℃乃至150℃に加熱するも
のである。
That is, the present invention is characterized in that in the step of coating the element circuit surface of a hybrid integrated circuit with resin, the external lead terminal portion of the mosquito circuit is heated and the synthetic resin is dripped in a good condition. Preferably, it is heated to 40°C to 150°C.

以下に第1図を参照にして実施例によシ本発明の製造方
法を#!ilf!Aする。セラミック基板等の絶縁基板
上に半導体素子の能動素子及び厚層又は薄躾で形成され
た受動素子が形成され更に該セラミック基板に社二方向
のみ外部リードとして熱圧着法又紘半田付けで取り付け
られている。以上の方法で混成集積回路素子lを形成し
た後まず、鋏素子の外部リード端子2が例えば100℃
に加熱されたホットプレート3上に載る様に該素子をセ
ットする。次に該素子面に樹脂を滴下した時まんべん吹
く各方面に流れる様に該素子面が平行を保つ様に調節す
る。外部リード端子をホットプレート上に置いてから鋏
素子のリード側端面が50〜60℃になる様に即ち約3
分間放置し九のち、流動性低粘度合成樹脂4、例えばシ
リコーン樹脂KE1212ムBe (信越クリコーン(
株)製)をデイスベ/サ−5で適量だけ該素子回路面の
中央部に滴下する。腋411WfIが諌素子回路面の隅
々照性き渡る迄、即ち滴下してから約2〜3分放置した
後本乾燥として150℃30分恒温槽で乾燥する。
The manufacturing method of the present invention will be described below by way of example with reference to FIG. Ilf! A. An active element of a semiconductor element and a passive element formed with a thick or thin layer are formed on an insulating substrate such as a ceramic substrate, and are further attached to the ceramic substrate as external leads only in two directions by thermocompression bonding or soldering. ing. After forming the hybrid integrated circuit element l by the above method, first, the external lead terminals 2 of the scissor element are heated to a temperature of, for example, 100°C.
The element is set so as to be placed on a hot plate 3 heated to . Next, when the resin is dropped onto the element surface, the resin is adjusted so that the element surface remains parallel so that it flows evenly in all directions. After placing the external lead terminal on the hot plate, heat it so that the lead side end surface of the scissor element reaches 50 to 60°C, that is, about 3°C.
After standing for 9 minutes, use a fluid low viscosity synthetic resin 4, such as silicone resin KE1212M Be (Shin-Etsu Cricone).
(manufactured by Co., Ltd.) was dropped onto the center of the circuit surface of the element using a dispenser/server 5. After the armpit 411WfI is left for about 2 to 3 minutes after being dropped until the illuminance reaches every corner of the cross-element circuit surface, it is dried in a constant temperature bath at 150° C. for 30 minutes for main drying.

以上、本発明による製造方法によれば素子の回路面上に
樹脂を滴下すると樹脂は四方に流れ出し、外部リード端
子を含め該素子回路の端が高くなる様な温度分布になっ
ている為回路素子の基板趨向で樹脂は完全に止tb、一
方、外部リード又は外部リードと蚊回路素子との接合部
を通しての樹脂の参み出しもなくなりた。これは樹脂の
表面張力と1.Tv情脂0熱による粘度上昇における局
所的な流動性低下を利用し丸ものである。
As described above, according to the manufacturing method according to the present invention, when resin is dropped onto the circuit surface of an element, the resin flows out in all directions, and the temperature distribution is such that the edges of the element circuit including the external lead terminals are higher. The resin completely stopped flowing in the direction of the board, and on the other hand, the resin no longer leaked out through the external leads or the joints between the external leads and the mosquito circuit element. This is due to the surface tension of the resin and 1. It is a round product that takes advantage of the local decrease in fluidity due to the increase in viscosity due to Tv Josou 0 heat.

以上の方法によれば外部リードに沿って樹脂が流れ出た
シ、外部リードと素子回路面との接合部からの樹脂の滲
み出しがなくなり、従来性なわれていた樹脂の流れ出し
による樹脂の除去作業が皆無となった。更に、従来方法
では樹脂の流れ具合を制御する為に樹脂の塗布量と粘度
値とを厳しく管理する必要があったが、本発明の方法に
よればそれがなくな)、無人化が可能となシ作業性の面
でも極めて向上した。又、更には従来に比べ被覆の膜厚
が厚く出来る為に耐候性の面でも向上した又、本発明の
方法に記載されている樹脂はKE1212ABCに限定
されるものではなく流動性低粘度LTV型合成樹脂なら
ば同様に実現し得る。又、本発明の方法に記載されてい
る素子の加熱温度は100℃に限定されるものではなく
40乃至150Lならば同様に実現し得る。
According to the above method, the resin flowing out along the external leads and the resin seeping out from the joint between the external leads and the element circuit surface are eliminated, and the conventional method of removing resin due to resin flowing out is eliminated. have all disappeared. Furthermore, in the conventional method, it was necessary to strictly control the amount of resin applied and the viscosity value in order to control the flow condition of the resin, but the method of the present invention eliminates this), making unattended operation possible. Workability has also been greatly improved. Furthermore, since the coating thickness can be made thicker than in the past, the weather resistance has also been improved.Also, the resin described in the method of the present invention is not limited to KE1212ABC, but can be used as a fluid, low viscosity LTV type resin. The same can be achieved using synthetic resin. Further, the heating temperature of the element described in the method of the present invention is not limited to 100°C, but can be similarly achieved at 40 to 150L.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明にかかる混成集積回路の製造方法の実施
例を説明する為の縦断面図を示す。 同、図において 1は混成集積回路素子、2は外部リード端子、3はホッ
トプレート、4は樹脂、5はディスペンサーシリンジで
ある。 磨 1 図
FIG. 1 shows a longitudinal sectional view for explaining an embodiment of the method for manufacturing a hybrid integrated circuit according to the present invention. In the figure, 1 is a hybrid integrated circuit element, 2 is an external lead terminal, 3 is a hot plate, 4 is a resin, and 5 is a dispenser syringe. Polish 1 figure

Claims (2)

【特許請求の範囲】[Claims] (1)素子回路表面が合成樹脂によって被覆される混成
集積回路の製造方法において、該回路の外部リード端子
部を加熱せしめた状態で該合成樹脂を滴下せしめること
を特徴とする混成集積回路の製造方法。
(1) A method for manufacturing a hybrid integrated circuit in which the surface of an element circuit is coated with a synthetic resin, characterized in that the synthetic resin is dropped while the external lead terminal portion of the circuit is heated. Method.
(2)  回路素子の加熱温度を40℃乃至150℃に
することを特徴とする特許請求の範囲(1)項に記載の
混成集積回路の製造方法。
(2) The method for manufacturing a hybrid integrated circuit according to claim (1), characterized in that the heating temperature of the circuit element is set at 40°C to 150°C.
JP12967781A 1981-08-19 1981-08-19 Manufacture of hybrid integrated circuit Pending JPS5831540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12967781A JPS5831540A (en) 1981-08-19 1981-08-19 Manufacture of hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12967781A JPS5831540A (en) 1981-08-19 1981-08-19 Manufacture of hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS5831540A true JPS5831540A (en) 1983-02-24

Family

ID=15015433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12967781A Pending JPS5831540A (en) 1981-08-19 1981-08-19 Manufacture of hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS5831540A (en)

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