JPS5828103A - High dielectric porcelain dielectric composition - Google Patents
High dielectric porcelain dielectric compositionInfo
- Publication number
- JPS5828103A JPS5828103A JP56127627A JP12762781A JPS5828103A JP S5828103 A JPS5828103 A JP S5828103A JP 56127627 A JP56127627 A JP 56127627A JP 12762781 A JP12762781 A JP 12762781A JP S5828103 A JPS5828103 A JP S5828103A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- dielectric constant
- dielectric
- composition
- porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、高い誘電率を有し、温度に対する誘電率の変
化が小さく、かつ交流電圧特性の良好な高誘電率磁器誘
電体組成物を提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a high-permittivity ceramic dielectric composition that has a high dielectric constant, has a small change in dielectric constant with respect to temperature, and has good AC voltage characteristics.
従来、高誘電率をもった磁躬誘電体としては、チタン酸
バリウムを主成分とした磁器が用いられているが、誘電
率が高くなるほど誘電率の温度変化が大きくなり、誘電
率が約４ｏｄｏ（２６℃において）以上になると変化率
が６０チ以上（２５℃〜８５℃において）となるもので
あった。また、温度変化が比較的小さなものでは、誘電
率が１５００以下になるため容量が十分にとれないもの
であった。そして、ＢａＴｉＯｓ”Ｎｂ２Ｏ５−Ｃｏ２
０ｓ系で、誘電率が２０００以上で誘電率の温度変化の
少ない磁器が得られるが、交流電圧の印加電圧が増すと
誘電率の変化が大きく、誘電損失（ｔａｎδ）が大きく
なり、交流電圧特性が悪いものであった。Conventionally, porcelain containing barium titanate as the main component has been used as a magnetic dielectric material with a high dielectric constant, but the higher the dielectric constant, the greater the temperature change in the dielectric constant, and the dielectric constant is approximately 4 odo. (at 26°C) or more, the rate of change was 60 degrees or more (at 25°C to 85°C). Furthermore, in the case of a material whose temperature change is relatively small, the dielectric constant becomes 1,500 or less, so that a sufficient capacity cannot be obtained. And BaTiOs”Nb2O5-Co2
In the 0s system, porcelain with a dielectric constant of 2000 or more and a small change in dielectric constant due to temperature can be obtained, but as the applied voltage of AC voltage increases, the change in dielectric constant increases, the dielectric loss (tan δ) increases, and the AC voltage characteristics was bad.
本発明はこのような従来の欠点を解消し、小型で大容量
の高誘電率磁器誘電体組成物を提供するものである。The present invention overcomes these conventional drawbacks and provides a small-sized, large-capacity, high-permittivity ceramic dielectric composition.
本発明は、チタン酸バリウＡ （ＢａＴｉＯ３）８７．
６〜９６．１重量％、チタン酸カルシウム（ＣａＴｉＯ
ｓ ）１．６〜９．７重量係、五酸化ニオブ（Ｎｂ２Ｏ
５） １．９〜３．７重量％で示される固溶体を基本組
成とし、これに副成分として主成分に対して酸化コバル
ト（０ｏ２ｅｓ） 、二酸化マンガフ （Ｍｎ０２）の
内の少なくとも１種を合計量で０．３〜０，６重量％、
酸化銅率磁器誘電体組成物である。The present invention relates to barium titanate A (BaTiO3) 87.
6-96.1% by weight, calcium titanate (CaTiO
s) 1.6-9.7 weight ratio, niobium pentoxide (Nb2O
5) The basic composition is a solid solution of 1.9 to 3.7% by weight, and the total amount of at least one of cobalt oxide (0o2es) and mangaf dioxide (Mn02) is added as a subcomponent to the main component. 0.3 to 0.6% by weight,
It is a copper oxide ceramic dielectric composition.
なお、本発明においてＢａＴｉＯ３、ＣａＴｉＯ３、Ｎ
ｂ２Ｏ５゜Ｃｏ２０ｓ 、ＣｕＯのそれぞれの成分範囲
を限定したのたＣａＴｉＯ３が９．７重量％を超えた場
合には室温における誘電率が低下し、高温（１２５℃付
近）における誘電率も低下し、誘電率の温度特性が悪く
なる。そして、Ｎｂ２Ｏ５が１．９重量％未満では交流
゛電圧特性が悪くなり、Ｎｂ２Ｏ５が３．７重量％を超
えた場合には室温における誘電率が低下する。また、Ｂ
ａＴｉＯ３はＣａＴｉＯｓとＮｂ２０５Ｖｃよりその範
囲が定められる。さらに、ＣＯ２Ｏ３が０．３重量％未
満では誘電率が低温側（−６６℃付近）で大きく、高温
側（１２５℃付近）で低下し、誘電率の温度特性が悪く
なる。ＣＯ２Ｏ３が０．５重量％を超えた場合には交流
電圧特性が悪くなる。また、ＣｕＯの添加により誘電率
は少し低下するが、交流電圧特性の改善および高温側（
１２６℃付近）での誘電率の改善効果がある。そして、
ＣｕＯが０．５重ｉ４． ％を超えた場合には誘電率の
低下が著しい。また、Ｍｎ０ｚはＣＯ２Ｏ３と同様の効
果がある。In addition, in the present invention, BaTiO3, CaTiO3, N
Although the component ranges of b2O5゜Co20s and CuO are limited, if CaTiO3 exceeds 9.7% by weight, the dielectric constant at room temperature decreases, and the dielectric constant at high temperature (near 125℃) also decreases, and the dielectric constant decreases. The temperature characteristics of the rate deteriorate. If the Nb2O5 content is less than 1.9% by weight, the AC voltage characteristics deteriorate, and if the Nb2O5 content exceeds 3.7% by weight, the dielectric constant at room temperature decreases. Also, B
The range of aTiO3 is defined by CaTiOs and Nb205Vc. Furthermore, if CO2O3 is less than 0.3% by weight, the dielectric constant is large at low temperatures (around -66°C) and decreases at high temperatures (around 125°C), resulting in poor temperature characteristics of the dielectric constant. When CO2O3 exceeds 0.5% by weight, AC voltage characteristics deteriorate. Although the dielectric constant decreases slightly due to the addition of CuO, it also improves AC voltage characteristics and improves the high temperature side (
This has the effect of improving the dielectric constant at temperatures around 126°C. and,
CuO is 0.5 times i4. %, the dielectric constant decreases significantly. Furthermore, Mn0z has the same effect as CO2O3.
よって初めて誘電率が高く、広い温度範囲に亘って容量
温度変化率が小さく、交流電圧特性の良好な特性を得る
ものである。Therefore, it is possible to obtain a high dielectric constant, a small capacitance temperature change rate over a wide temperature range, and good AC voltage characteristics.
以下、本発明を実施例により説明する８原料としてＢａ
ＴｉＯ３，Ｃ，ａＴｉＯｓ 、Ｎｂ２Ｏ５、Ｃｏ２’ｓ
、ＭｎＯ２、ＣｕＯを使用し、これらの粉末を、下記
の表の記載のごとき所定の組成に秤量し、ボールミルで
混合し乾燥後、５Ｔｉ％の２７人（ポリビニル、アルコ
−ゝル）水溶液を９重量％添加して造粒し、直径１３ｍ
ｍ。Hereinafter, the present invention will be explained using examples. Eight raw materials include Ba
TiO3, C, aTiOs, Nb2O5, Co2's
, MnO2, and CuO, these powders were weighed to a predetermined composition as shown in the table below, mixed in a ball mill, dried, and then mixed with a 5% Ti (polyvinyl, alcohol) aqueous solution of 9%. Added by weight% and granulated, diameter 13m
m.
厚さ約０．３ｍｍの円板Ｋ １ ｔｏｎ／ＣＸＰの圧力
で成形し、これを１０００℃〜１４００℃で２時間焼成
した。A disk with a thickness of about 0.3 mm was molded at a pressure of K 1 ton/CXP, and this was fired at 1000° C. to 1400° C. for 2 hours.
このようにして得ろハだ素子に銀電極を焼（＝Ｉげで付
与し、その１日後に２５℃における静電容量と誘電損失
を測定し、静電容量から誘電率を求？／）だ。また、誘
電率の温度変化率や交流電圧特性を求めた。これらの測
定結果を同じく下記の表に示す。In this way, a silver electrode is applied to the obtained solder element by baking (I heat it), and one day later, the capacitance and dielectric loss are measured at 25°C, and the dielectric constant is calculated from the capacitance. . We also determined the temperature change rate of dielectric constant and AC voltage characteristics. The results of these measurements are also shown in the table below.
（Ｊ）、 １ Ｎ、ｌＢ）
以上のように本発明の組成範囲で、誘電率が高く、広い
温度範囲に亘って容量温度変化率が小さく、しかも交流
電圧特性の良好な特性が得られるものであり、積層コン
デンサ等の材料として工業的価値が犬なるものである。(J), 1 N, 1B) As described above, within the composition range of the present invention, a material with a high dielectric constant, a small rate of capacitance temperature change over a wide temperature range, and good AC voltage characteristics can be obtained. Therefore, it has great industrial value as a material for multilayer capacitors, etc.
Claims (1)
１重量％、チタン酸カルシウム（ＣａＴｉ０３）１ 、
ｓ 〜９．７重量％、五酸化ニオブ（Ｎｂ２Ｏ５） １
．９〜３．７重量％で示される固溶体を基本組成とし、
これに副成分として主成分に対して酸化コバルト（ＣＯ
２０５）。 二酸化マンガン（Ｍｎ０ｚ ）の内の少なくとも１種を
合計量で０．３〜０．５重量％、酸化銅（ＣｕＯ）を０
〜０．５重量％添加含有してなる高誘電率磁器誘電体組
成物。[Claims] Barium titanate (BaTi05) 87.8-96.
1% by weight, calcium titanate (CaTi03) 1,
s ~9.7% by weight, niobium pentoxide (Nb2O5) 1
．． The basic composition is a solid solution represented by 9 to 3.7% by weight,
Cobalt oxide (CO) is added as a subcomponent to the main component.
205). The total amount of at least one of manganese dioxide (Mn0z) is 0.3 to 0.5% by weight, and copper oxide (CuO) is 0.
A high permittivity ceramic dielectric composition containing ~0.5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56127627A JPS5828103A (en) | 1981-08-13 | 1981-08-13 | High dielectric porcelain dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56127627A JPS5828103A (en) | 1981-08-13 | 1981-08-13 | High dielectric porcelain dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5828103A true JPS5828103A (en) | 1983-02-19 |
| JPH0237045B2 JPH0237045B2 (en) | 1990-08-22 |
Family
ID=14964756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56127627A Granted JPS5828103A (en) | 1981-08-13 | 1981-08-13 | High dielectric porcelain dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5828103A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1984000076A1 (en) * | 1982-06-18 | 1984-01-05 | Matsushita Electric Ind Co Ltd | Porcelain composition with high dielectric constant |
| US4882305A (en) * | 1985-05-03 | 1989-11-21 | Tam Ceramics, Inc. | Dielectric ceramic composition with high dielectric constant and flat TC characteristics |
| US4939108A (en) * | 1986-11-03 | 1990-07-03 | Tam Ceramics, Inc. | Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics |
| US5268342A (en) * | 1991-06-27 | 1993-12-07 | Murata Manufacturing Co., Ltd. | Nonreducing dielectric ceramic composition |
| US5550092A (en) * | 1995-02-10 | 1996-08-27 | Tam Ceramics Inc. | Ceramic dielectrics compositions |
-
1981
- 1981-08-13 JP JP56127627A patent/JPS5828103A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1984000076A1 (en) * | 1982-06-18 | 1984-01-05 | Matsushita Electric Ind Co Ltd | Porcelain composition with high dielectric constant |
| US4558021A (en) * | 1982-06-18 | 1985-12-10 | Matsushita Electric Industrial Co., Ltd. | Ceramic high dielectric composition |
| US4882305A (en) * | 1985-05-03 | 1989-11-21 | Tam Ceramics, Inc. | Dielectric ceramic composition with high dielectric constant and flat TC characteristics |
| US4939108A (en) * | 1986-11-03 | 1990-07-03 | Tam Ceramics, Inc. | Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics |
| US5268342A (en) * | 1991-06-27 | 1993-12-07 | Murata Manufacturing Co., Ltd. | Nonreducing dielectric ceramic composition |
| US5550092A (en) * | 1995-02-10 | 1996-08-27 | Tam Ceramics Inc. | Ceramic dielectrics compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0237045B2 (en) | 1990-08-22 |
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