JPS59116174A - High permittivity ceramic composition - Google Patents

High permittivity ceramic composition

Info

Publication number
JPS59116174A
JPS59116174A JP57224224A JP22422482A JPS59116174A JP S59116174 A JPS59116174 A JP S59116174A JP 57224224 A JP57224224 A JP 57224224A JP 22422482 A JP22422482 A JP 22422482A JP S59116174 A JPS59116174 A JP S59116174A
Authority
JP
Japan
Prior art keywords
composition
ceramic composition
dielectric constant
dielectric
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57224224A
Other languages
Japanese (ja)
Other versions
JPS6222942B2 (en
Inventor
津田 泰男
徹 石田
秀行 沖中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57224224A priority Critical patent/JPS59116174A/en
Publication of JPS59116174A publication Critical patent/JPS59116174A/en
Publication of JPS6222942B2 publication Critical patent/JPS6222942B2/ja
Granted legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Capacitors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はセラミックコンデンサ、特に積層セラミックコ
ンデンサに用いることができる高誘電率系磁器組成物に
関するものである0 従来例の構成とその問題点 従来、高誘電率系磁器組成物としては、チタン2 ・・
−ジ 酸バリウムB a T iOsを主成分として、これに
ジルコン酸カルシウムCaZr○3.チタン酸カルシウ
ムCaTi○31スズ酸カルシウムCa S n031
チタン酸ストロンチウノ(S r T i03などを適
量添加して特性を改善したものが広く実用化されている
。これらの磁器組成物の焼成温度は概ね1300℃〜1
400℃と高いものであった。近年、電子機器分野の発
展とともに、電子機器の小形、軽量化が著しく、従来円
板形状で用いられていたセラミックコンデンサにおいて
も、小形で大容量を達成するために積層構造を持った積
層セラミックコンデンサが開発され、広く使用されてき
ている。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a high dielectric constant ceramic composition that can be used for ceramic capacitors, particularly multilayer ceramic capacitors. As a dielectric constant ceramic composition, titanium 2...
- Barium diacid B a TiOs is the main component, and calcium zirconate CaZr○3. Calcium titanate CaTi○31 Calcium stannate Ca S n031
Products whose properties have been improved by adding an appropriate amount of strontium titanate (S r Ti03, etc.) have been widely put into practical use.The firing temperature of these porcelain compositions is generally 1,300°C to 1,300°C.
The temperature was as high as 400°C. In recent years, with the development of the electronic equipment field, electronic equipment has become significantly smaller and lighter, and even ceramic capacitors that were conventionally used in a disc shape have been replaced with multilayer ceramic capacitors that have a laminated structure to achieve large capacitance in a small size. has been developed and widely used.

積層セラミックコンデンサにおいては第1図に示すよう
に、磁器誘電体1の上下に内部電極2を配して、微小な
単板コンデンサを多数個並列に接続し、積み重ねた構造
をとっており、内部電極2は交互に左右いずれかの外部
電極3に接続されている。
As shown in Figure 1, a multilayer ceramic capacitor has a structure in which internal electrodes 2 are placed above and below a ceramic dielectric 1, and many small single-plate capacitors are connected in parallel and stacked. The electrodes 2 are alternately connected to either left or right external electrodes 3.

このような積層セラミックコンデンサでは、その製造−
1−内部電極を磁器誘電体に埋込んだ状態で3 ・。
For such multilayer ceramic capacitors, their manufacturing
1- With the internal electrode embedded in the porcelain dielectric 3.

焼結する必要があるが、従来のチタン酸バリウムを主成
分とする高誘電率系磁器組成物では前記のように焼成温
度が1300℃以上と高いため、内部電極の材料として
はこのような高温でも安定な白金、あるいはパラジウム
のような高価な貴金属を使わざるを得ないという欠点を
有していた。
It is necessary to sinter the material, but since the firing temperature of conventional high-permittivity ceramic compositions mainly composed of barium titanate is as high as 1,300°C or higher, it is difficult to use such high-temperature materials as the material for the internal electrodes. However, it had the disadvantage of having to use expensive precious metals such as stable platinum or palladium.

発明の目的 本発明は」−記入点に鑑み、1Qoo℃以下の低温で焼
結が可能であり、従って前記内部電極の材t1として安
価な銀あるいは銀糸合金を使用することができ、なおか
つ誘電率が高く、誘電体損失が小さく、絶縁抵抗が高く
温度に対する静電容量変化率の小さな高誘電率系磁器組
成物を提供するものである。
OBJECTS OF THE INVENTION In view of the above points, the present invention is capable of sintering at a low temperature of 1 Qoo°C or lower, and therefore, inexpensive silver or silver thread alloy can be used as the material t1 of the internal electrode, and the dielectric constant is low. The object of the present invention is to provide a high dielectric constant ceramic composition that has high dielectric loss, low dielectric loss, high insulation resistance, and low capacitance change rate with respect to temperature.

発明の構成 本発明の高誘電率系磁器組成物は、鉄・タングステン酸
鉛Pb (F e3芭QO3,マグネシウム−ニオブ酸
鉛Pb(Mg3/9Nb%)03. f タフ酸鉛Pb
Tio3カら成る三成分組成物をP b (F eヒチ
) x(Mg3/9Nb%) yT t 203と表わ
した時に、組成比x+ V及び2がおのおの0.01 
<、、 x (0、25,0,76<、、 y <: 
0 、96 。
Structure of the Invention The high dielectric constant ceramic composition of the present invention is composed of iron-lead tungstate Pb (Fe3BaQO3, magnesium-lead niobate Pb (Mg3/9Nb%)03.f lead tungstate Pb
When a three-component composition consisting of Tio3 is expressed as P b (Fe Hichi) x (Mg3/9Nb%) yT t 203, the composition ratios x + V and 2 are each 0.01.
<,, x (0, 25, 0, 76 <,, y <:
0,96.

0.01 〈z −”′、o 、 10の範囲内にある
組成物に対して、マンガン・タングステン酸鉛Pb (
Mn、W、烏を1.0〜10.0重量チ添加することに
より構成されている。
For compositions in the range of 0.01 〈z −”′, o , 10
It is constituted by adding 1.0 to 10.0 parts by weight of Mn, W, and Karasu.

実施例の説明 以下本発明の実施例について詳細に説明する。Description of examples Examples of the present invention will be described in detail below.

1ず焼結に21:すPb(Fe、、AA)03. Pb
 (Mq、Nb%)03゜P bT IO3及びPb(
Mn、W、)03ノ比率が次表ニ示ス値となるように、
酸化鉛、酸化鉄、酸化タングステン、酸化マグネシウム
、酸化ニオブ、酸化チタン、酸化マンガンを適量秤量し
、これをボールミルを用いて混合した。この混合原料を
700℃〜85C)C:で仮焼した後、再びボールミル
を用いて微粉砕した。この微粉砕原料にポリビニールア
ルコールを加えて造粒し、直径13調、厚み0.8配の
円板形状経成形した。その後950℃〜1o○0℃の温
度で、マグネシア質匡鉢中で焼成したのち、両面に銀を
主成台とする電極を付与し、誘電体試料とした。このよ
うにして作成した試料について電気特性を測定1−だ結
果を次表に示す。ここで誘電率ε6及び誘電体損失ta
nδは周波数1KHzで20℃で測定した。絶縁抵抗I
Rは直流50Vを印加して室温中で測定した。なお表中
の容量変化率は25℃における静電容量を基準とした、
−30℃及び85℃での静電容量の変化率を示す。
1 for sintering 21: Pb (Fe, AA) 03. Pb
(Mq, Nb%)03゜P bT IO3 and Pb (
So that the ratio of Mn, W, )03 becomes the displayed value below,
Appropriate amounts of lead oxide, iron oxide, tungsten oxide, magnesium oxide, niobium oxide, titanium oxide, and manganese oxide were weighed and mixed using a ball mill. This mixed raw material was calcined at 700° C. to 85° C., and then finely ground again using a ball mill. This finely pulverized raw material was granulated by adding polyvinyl alcohol, and molded into a disc shape with a diameter of 13 and a thickness of 0.8. After that, it was fired in a magnesia pot at a temperature of 950° C. to 100° C., and then electrodes mainly made of silver were provided on both sides to prepare a dielectric sample. The electrical properties of the samples thus prepared were measured and the results are shown in the following table. Here, dielectric constant ε6 and dielectric loss ta
nδ was measured at 20° C. with a frequency of 1 KHz. Insulation resistance I
R was measured at room temperature by applying 50 V DC. The rate of change in capacity in the table is based on the capacitance at 25°C.
The rate of change in capacitance at -30°C and 85°C is shown.

表中*印を付した試料は本発明の範囲外のものであり、
比較のため示したものである。
Samples marked with * in the table are outside the scope of the present invention,
This is shown for comparison.

即ちP b (F e3A )03のモル比Xがo、2
6を超えるると誘電体損失tanδが犬きく実用的でな
く、またXが0.01未満では誘電率が小さくなる。さ
らにPb ”/5NbX)o3 (7) モル比yが0
.96物えると焼成温度が高くなり、寸だ高価な酸化ニ
オブの比率が大きくなるだめ実用的でない。yがo、7
6未満では絶縁抵抗が低下する。′!iた2が0.01
未満では誘電率が小さく0.10を越えると誘電体損失
l、lnδが大きくなる。また、Pb(Mnゾ()03
が1.0fiJL %未満では温度に対する静電容量の
変化率の改良効果が得られず、10.0重量%を超える
と絶縁抵抗が低下し、さらに誘電率を低下するため実用
的でない。
That is, the molar ratio X of P b (F e3A )03 is o, 2
When X exceeds 6, the dielectric loss tan δ becomes too large to be practical, and when X is less than 0.01, the dielectric constant becomes small. Furthermore, Pb''/5NbX)o3 (7) molar ratio y is 0
.. If the temperature exceeds 96, the firing temperature will be high and the proportion of expensive niobium oxide will be large, making it impractical. y is o, 7
If it is less than 6, the insulation resistance will decrease. ′! ita2 is 0.01
If it is less than 0.10, the dielectric constant is small, and if it exceeds 0.10, the dielectric losses l and lnδ become large. In addition, Pb(Mnzo()03
If it is less than 1.0 fiJL %, the effect of improving the rate of change in capacitance with respect to temperature cannot be obtained, and if it exceeds 10.0 wt %, the insulation resistance decreases and the dielectric constant further decreases, which is not practical.

6  1、 9 ・、−シ 発明の効果 以」−詳述したように、本発明はPb (Feマ1’X
 )03゜Pb(Mq%Nb5i )03+ P bT
 i○3からなる三成分組成物Pb (F e、w、)
 x(McJy6Nbg )yTll−x −y○3に
おいて、x、y及び2が各々0.01≦X〈0.25゜
0.75≦y≦0.96,0.01≦z<0.1oの範
囲内にある組成物に対してPb (MnhX )Oaを
1.○〜10、○重量係の範囲内で添加することにより
、誘電率ε、が3260〜6260と大きく、誘電体損
失fanδが0.43係〜1.53係と小さく、また絶
縁抵抗IRが1.o×1o  0以上と高い値を示し、
温度に対する静電容量変化率の小さい高性能の新規な誘
電体磁器組成物を得ることができる。さらに焼成温度が
950’C〜1000℃と低温であるために積層セラミ
ソクコンデンザに使用した場合に内部電極として銀、あ
るいは銀糸合金などの安価な金属を用いることができる
ため、積層セラミソクコンデンザの低コスト化を図る上
で非常に有効な価値があるものである。加えて低温での
焼結が可能なため、焼成に用いる電気炉の保全が容易1
0ヶ、−ジ になるばかりでなく、使用電力の上からも省エネルギー
化が図れるものである。従って、積層セラミノクコンデ
ンザのみでな〈従来の円板形セラミノクコンデンザに応
用した場合においても、製造コスト」二有利となるもの
である。
6 1, 9 ・, - Effects of the Invention As described in detail, the present invention
)03゜Pb(Mq%Nb5i)03+ P bT
Three-component composition Pb consisting of i○3 (F e, w,)
In x(McJy6Nbg)yTll-x-y○3, x, y and 2 are respectively 0.01≦X<0.25゜0.75≦y≦0.96, 0.01≦z<0.1o Pb(MnhX)Oa for compositions within the range of 1. By adding within the range of ○ to 10, ○ weight factor, the dielectric constant ε is as high as 3260 to 6260, the dielectric loss fan δ is small as 0.43 factor to 1.53 factor, and the insulation resistance IR is 1 .. o×1o shows a high value of 0 or more,
A novel dielectric ceramic composition with high performance and a small rate of change in capacitance with respect to temperature can be obtained. Furthermore, since the firing temperature is as low as 950'C to 1000°C, it is possible to use inexpensive metals such as silver or silver thread alloys as internal electrodes when used in laminated ceramic condensers. This is a very effective value in reducing the cost of the product. In addition, since sintering can be performed at low temperatures, it is easy to maintain the electric furnace used for firing1.
This not only reduces the number of units to zero, but also saves energy in terms of power consumption. Therefore, it is advantageous in terms of manufacturing cost not only when applied to a laminated ceramic capacitor but also when applied to a conventional disc-shaped ceramic capacitor.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は積層セラミックコンデンサの一例を示す一部切欠
ネ・1祝図である。 1・・・・・・磁器誘電体、2・・・・・・内部電極、
3・川・・外部電極・
The drawing is a partially cutaway diagram showing an example of a multilayer ceramic capacitor. 1... Ceramic dielectric, 2... Internal electrode,
3. River...External electrode...

Claims (1)

【特許請求の範囲】[Claims] 鉄・タングステン酸鉛Pb (F eHVζ)03.マ
グネシウム・ニオブ酸鉛Pb (MqHNb%)03.
チタン酸鉛PbTiO3からなる三成分組成物をP b
 (F eX”X ) x(MCI%Nb%) yT 
I Z○3 と表わした時に、組成比Xが0.01≦x
 (0,25、yがo、75≦y≦0.96.2が0.
01≦2≦0.10の範囲内である組成物に対1.て、
マンガン・タングステン酸鉛pb (MIN、W、)0
3を1.0〜10.0重量%添加したことを特徴とする
高誘電率系磁器組成物。
Iron/lead tungstate Pb (F eHVζ) 03. Magnesium lead niobate Pb (MqHNb%)03.
A ternary composition consisting of lead titanate PbTiO3 is
(F eX”X) x (MCI%Nb%) yT
When expressed as I Z○3, the composition ratio X is 0.01≦x
(0,25, y is o, 75≦y≦0.96.2 is 0.
01≦2≦0.10 for the composition. hand,
Manganese lead tungstate pb (MIN, W,)0
1. A high dielectric constant ceramic composition, characterized in that 1.0 to 10.0% by weight of 3 is added.
JP57224224A 1982-12-20 1982-12-20 High permittivity ceramic composition Granted JPS59116174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57224224A JPS59116174A (en) 1982-12-20 1982-12-20 High permittivity ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224224A JPS59116174A (en) 1982-12-20 1982-12-20 High permittivity ceramic composition

Publications (2)

Publication Number Publication Date
JPS59116174A true JPS59116174A (en) 1984-07-04
JPS6222942B2 JPS6222942B2 (en) 1987-05-20

Family

ID=16810448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224224A Granted JPS59116174A (en) 1982-12-20 1982-12-20 High permittivity ceramic composition

Country Status (1)

Country Link
JP (1) JPS59116174A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2621579A1 (en) * 1987-10-12 1989-04-14 Mitsubishi Mining & Cement Co DIELECTRIC CERAMIC COMPOSITION
KR20170077393A (en) * 2015-12-28 2017-07-06 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2621579A1 (en) * 1987-10-12 1989-04-14 Mitsubishi Mining & Cement Co DIELECTRIC CERAMIC COMPOSITION
BE1001326A3 (en) * 1987-10-12 1989-09-26 Mitsubishi Mining & Cement Co Dielectric ceramic composition.
US4897373A (en) * 1987-10-12 1990-01-30 Mitsubishi Mining And Cement Co., Ltd. Dielectric ceramic composition
KR20170077393A (en) * 2015-12-28 2017-07-06 삼성전기주식회사 Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

Also Published As

Publication number Publication date
JPS6222942B2 (en) 1987-05-20

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