JPH03119608A - Nonreducing dielectric ceramic - Google Patents

Nonreducing dielectric ceramic

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Publication number
JPH03119608A
JPH03119608A JP1256147A JP25614789A JPH03119608A JP H03119608 A JPH03119608 A JP H03119608A JP 1256147 A JP1256147 A JP 1256147A JP 25614789 A JP25614789 A JP 25614789A JP H03119608 A JPH03119608 A JP H03119608A
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JP
Japan
Prior art keywords
amount
oxygen
ceramic
porcelain
dielectric ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1256147A
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Japanese (ja)
Other versions
JP2694366B2 (en
Inventor
Morisue Kawamoto
川本 盛季
Akira Furusawa
明 古澤
Akihiro Kaneuchi
金内 明宏
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Kyocera Corp
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Kyocera Corp
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Abstract

PURPOSE:To reduce variation ratio of electrostatic capacity to DC electric field in nonreducing dielectric ceramic by setting an oxygen defective quantity of the ceramic in the specific range. CONSTITUTION:In nonreducing dielectric ceramic composed of barium titanic acid as the principal ingredient and the other metallic oxide, to reduce variation ratio (DC bias characteristics) of electrostatic capacity to DC electric field can be realized by setting the oxygen defective quantity in the ceramic which is calculated on the basis of weight difference between before and after heat treatment at 1000 deg.C in the air, for a range from 10<17> to 10<19>pcs/cm<3>. As a result, a lamination layer type ceramic condenser of which inner electrode is made of a base metal such as nickel can be realized.

Description

【発明の詳細な説明】 (発明の利用分野) 本発明は、磁器コンデンサ、特にニッケル等の卑金属を
内部電極とする積層型磁器コンデンサに好適な非還元性
誘電体磁器に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Application of the Invention) The present invention relates to a non-reducible dielectric ceramic suitable for a ceramic capacitor, particularly a laminated ceramic capacitor having an internal electrode made of a base metal such as nickel.

(従来技術) 従来、一般に積層型磁器コンデンサは表面に内部電極が
塗付されたシート状のBaTi0.を主成分とする誘電
体を複数枚積層するとともに各シートの内部電極を、交
互に並列に一対の外部接続用電極に接続し、これを焼結
一体化することにより形成されている。このような積層
型磁器コンデンサは近年のエレクトロニクスの進展に伴
い電子部品の小型化が急速に進行し、広範な電子回路に
使用されるようになってきている。
(Prior Art) Conventionally, multilayer ceramic capacitors generally consist of sheet-like BaTi0. It is formed by laminating a plurality of sheets of dielectric material whose main component is, connecting the internal electrodes of each sheet alternately and in parallel to a pair of external connection electrodes, and sintering and integrating them. Such laminated ceramic capacitors have come to be used in a wide range of electronic circuits as electronic components have rapidly become smaller with the recent advances in electronics.

しかしながら、通常のBaTiOsを主成分とする誘電
体材料は1250℃〜1350℃の高温で焼成する必要
があり、この材料を積層型磁器コンデンサの誘電体とし
て使用した場合、内部電極は前記誘電体の焼成温度にて
溶解することなく、かつ酸化することがない高価な貴金
属であるパラジウム(融点1555℃)またはその合金
が使用されている。特に静電容量が大きいものでは内部
電極枚数が増加するためコストが高くなるなど、従来の
積層型磁器コンデンサは、誘電特性には優れるものの価
格面がその進展に大きな妨げとなっていた。
However, ordinary dielectric materials mainly composed of BaTiOs need to be fired at a high temperature of 1250°C to 1350°C, and when this material is used as the dielectric of a multilayer ceramic capacitor, the internal electrodes are Palladium (melting point: 1555° C.), which is an expensive noble metal that does not melt or oxidize at the firing temperature, or an alloy thereof is used. Conventional multilayer ceramic capacitors have excellent dielectric properties, but their price has been a major impediment to their progress, especially for those with large capacitances, which increase the number of internal electrodes, resulting in higher costs.

そこで、上記従来の積層型磁器コンデンサの高価となる
欠点を解消するために内部電極として安価な卑金属、例
えばニッケルを使用することが試みられている。しかし
ながら、ニッケルなどの卑金属を内部電極として使用す
ると、チタン酸バリラム(BaTiOs)等から成る誘
電体と卑金属内部電極とを同時焼結する際、前記卑金属
が酸化することなく金属膜として焼結する条件はNi/
NiOの平衡酸素分圧が1300℃において約3X10
−フateであるから、それ以下の酸素分圧でなければ
ならず、この場合チタン酸バリウムまたはその固溶体か
らなる誘電体は、一般に前記の酸素分圧下では還元され
てしまって絶縁性を失い、その結集積層型磁器コンデン
サとしての実用的な誘電体特性が得られなくなるという
欠点を有していた。
Therefore, attempts have been made to use inexpensive base metals, such as nickel, as the internal electrodes in order to overcome the drawback of the conventional multilayer ceramic capacitors being expensive. However, when a base metal such as nickel is used as an internal electrode, when simultaneously sintering a dielectric material such as barylum titanate (BaTiOs) and a base metal internal electrode, the conditions are such that the base metal can be sintered as a metal film without being oxidized. is Ni/
The equilibrium oxygen partial pressure of NiO is approximately 3X10 at 1300℃
-ate, the oxygen partial pressure must be lower than that, and in this case, the dielectric material made of barium titanate or its solid solution is generally reduced and loses its insulating properties under the above oxygen partial pressure. This has the disadvantage that practical dielectric properties for a multilayer ceramic capacitor cannot be obtained.

そこで、従来から非還元性誘電体磁器組成物として各種
の組成物が提案された。例えば、BaT to。
Therefore, various compositions have been proposed as non-reducible dielectric ceramic compositions. For example, BaT to.

に代表されるABOs型ペロ型入ロブスカイト構造にお
いて、Aイオンを化学量論比より過剰に配合することに
よって耐還元性を向上させることが特公昭57−425
88号に、また、BaTiO3に対し添加物としてCa
Ti0..5rTiO,等のチタン酸塩、BaZr0.
、CaZr01、MgZrOs等のジルコニウム酸塩の
他、Bit’sやそれらの化合物、Yz(h、Lag’
s 、Nd2O2等の希土類酸化物、にno 、MgO
、AI!03等の各種の金属酸化物を組合せることが提
案されている。
Japanese Patent Publication No. 57-425 reported that reduction resistance can be improved by incorporating A ions in excess of the stoichiometric ratio in the ABOs-type perot-type lobskite structure represented by
No. 88, Ca is added as an additive to BaTiO3.
Ti0. .. 5rTiO, etc., BaZr0.
In addition to zirconate salts such as , CaZr01, MgZrOs, Bit's and their compounds, Yz(h, Lag'
s, rare earth oxides such as Nd2O2, nino, MgO
, AI! It has been proposed to combine various metal oxides such as 03.

(発明が解決しようとする問題点) これまで非還元性誘電体磁器組成物は、前述したような
添加物の組合せ等による組成物の改良によって、要求さ
れる主特性、即ち高誘電率、高絶縁抵抗、低誘電損失、
並びに誘電率の温度変化率の低減等の特性については、
ある程度の満足すべきものが得られるようになった。
(Problems to be Solved by the Invention) Up until now, non-reducible dielectric ceramic compositions have been improved by improving the composition through combinations of additives, etc., as described above, to achieve the required main properties, namely, high dielectric constant and high dielectric constant. Insulation resistance, low dielectric loss,
Regarding characteristics such as reduction of temperature change rate of dielectric constant,
I was able to get something that was satisfying to a certain extent.

しかしながら、温度安定型の積層型磁器コンデンサにお
いては、上記の特性の他に直流電界に対する静電容量の
変化率(以下、DCバイアス特性という)が小さいこと
が要求されている。このDCバイアス特性は、印加され
る直流電界だけでな(、測定温度や直流電界の印加時間
にも依存する。
However, in addition to the above characteristics, temperature-stable multilayer ceramic capacitors are required to have a small rate of change in capacitance with respect to a DC electric field (hereinafter referred to as DC bias characteristics). This DC bias characteristic depends not only on the applied DC electric field (but also on the measurement temperature and the application time of the DC electric field).

従来、このDCバイアス特性に関してはPdやAg−P
dを内部電極とし、大気中で焼成して製造される積層型
磁器コンデンサにおいては、特に大きな問題とはならな
かった。ところが、Ni等の卑金属を内部電極として還
元雰囲気で焼成して製造されるタイプの積層型磁器コン
デンサでは、初期特性は満たしながらも上記DCバイア
ス特性、特に直流電界の印加時間に対する静電容量の変
化が大きいという致命的欠点を有していた。
Conventionally, regarding this DC bias characteristic, Pd or Ag-P
This did not pose any particular problem in a multilayer ceramic capacitor manufactured by using d as an internal electrode and firing in the atmosphere. However, in multilayer ceramic capacitors manufactured by firing in a reducing atmosphere using base metals such as Ni as internal electrodes, although the initial characteristics are met, the DC bias characteristics described above, especially the change in capacitance with respect to the application time of the DC electric field, are It had the fatal drawback of being large.

上記の特性に対し、従来から添加物に対し検討を加えら
れているものの、良好で安定な特性を有する非還元性誘
電体磁器は未だ得られておらず、そのためにこの種の積
層型磁器コンデンサの実用化を遅延させているのが現状
であった。
Although additives have been investigated for the above characteristics, non-reducible dielectric ceramics with good and stable characteristics have not yet been obtained, and therefore this type of multilayer ceramic capacitor The current situation is that the practical application of the technology has been delayed.

(問題点を解決するための手段) 本発明者等は、この非還元性誘電体磁器と上記DCバイ
アス特性との関係について研究を重ねた結果、上記特性
が磁器中の酸素欠陥量に大きく依存することを見出し、
さらにその好ましい欠陥量について検討を重ねたところ
、還元雰囲気で焼成して得られた磁器を1000’Cの
空気中で熱処理した際の処理前後の重量差によって算出
される磁器中の酸素欠陥量を10′7〜1019個/d
の範囲に設定することによって、優れたDCバイアス特
性が得られることを知見した。
(Means for Solving the Problems) As a result of repeated research into the relationship between this non-reducible dielectric ceramic and the above DC bias characteristics, the inventors have found that the above characteristics are highly dependent on the amount of oxygen defects in the porcelain. find something to do,
After further consideration of the preferable amount of defects, we found that the amount of oxygen defects in porcelain calculated from the weight difference before and after the treatment when porcelain obtained by firing in a reducing atmosphere was heat treated in air at 1000'C. 10'7~1019 pieces/d
It has been found that excellent DC bias characteristics can be obtained by setting the value within the range of .

以下、本発明を詳述する。The present invention will be explained in detail below.

通常、Ni内部電極の積層型磁器コンデンサに用いられ
る非還元性誘電体、例えばチタン酸バリウム(BaTi
Os)を主成分とする磁器は還元雰囲気で焼成されると
雰囲気の還元作用により次式(1)%式%(1) により自由電子(e′)と酸素欠陥(vO)が生成され
ることから絶縁抵抗が低下する傾向にある。そこで、こ
の絶縁抵抗の低下を抑制するためにBaTi0+に対し
アクセプター型と呼ばれる低原子価元素、例えばMnO
を固溶させ、次式(2) %式% (2 )により、多量の酸素欠陥(■6)とVia  % M
nTi等の陽イオンサイト欠陥を生成させる。絶縁抵抗
ばMnのTiサイトへの固溶量並びに酸素欠陥濃度が高
くなるに従い大きくなることから、MnO等のアクセプ
ター型添加物を多量配合し、酸素欠陥量を大きくしよう
とする試みが従来から行われており、その欠陥量は本発
明者の測定によれば1020個/C−程度であった。
Non-reducible dielectrics, such as barium titanate (BaTi), are commonly used in multilayer ceramic capacitors with Ni internal electrodes.
When porcelain whose main component is Os) is fired in a reducing atmosphere, free electrons (e') and oxygen defects (vO) are generated by the reducing action of the atmosphere according to the following formula (1). Insulation resistance tends to decrease. Therefore, in order to suppress this decrease in insulation resistance, low valence elements called acceptor type elements such as MnO are used for BaTi0+.
By the following formula (2), a large amount of oxygen defects (■6) and Via % M
Cation site defects such as nTi are generated. Since insulation resistance increases as the amount of solid solution of Mn in Ti sites and the concentration of oxygen vacancies increase, attempts have been made to increase the amount of oxygen vacancies by adding a large amount of acceptor type additives such as MnO. According to measurements made by the present inventor, the number of defects was approximately 1020/C-.

これに対し、本発明は上記のような従来の考え方とはま
ったく逆行するもので、磁器中の酸素欠陥量を低減させ
ることにより、DCバイアス特性を改善しようとするも
のである。これは式(2)によって形成される多量の酸
素欠陥或いはV□、Mn71などの陽イオンサイト欠陥
が対をつ(り分極能を持つが、その分極は局所バイアス
として働き、結果として磁器の誘電的性質、即ち、電圧
特性が劣化し易(なるという考えに基づく。
On the other hand, the present invention is completely contrary to the conventional concept as described above, and aims to improve the DC bias characteristics by reducing the amount of oxygen defects in the porcelain. This is due to the large amount of oxygen defects formed by formula (2) or cation site defects such as V□ and Mn71, which have polarizability in pairs, and the polarization acts as a local bias, resulting in the dielectric It is based on the idea that the voltage characteristics are susceptible to deterioration.

このことは磁器中の酸素欠陥量と経時変化に伴う静電容
量変化率との関係を示した第1図より明らかにされる。
This is made clear from FIG. 1, which shows the relationship between the amount of oxygen defects in porcelain and the rate of change in capacitance over time.

即ち、第1図によれば酸素欠陥量が低減するに従い変化
率が小さくなり、即ち、電圧特性が顕著に改善されるこ
とが理解される。
That is, it is understood from FIG. 1 that as the amount of oxygen vacancies decreases, the rate of change decreases, that is, the voltage characteristics are significantly improved.

本発明の非還元性誘電体磁器は、上記特性と酸素欠陥量
との関連に基づき、酸素欠陥量が10′7〜1019個
/ c+4、特に1017〜10111個/ldである
ことが重要であって、酸素欠陥量が1019個/dより
多いと、DCバイアス特性の改善効果が得られず、酸素
欠陥量が1017個/ cdを下回る磁器は焼成時の雰
囲気中の酸素濃度をかなり高くする必要性があることか
ら、Ni内部電極が酸化され望ましくない。
Based on the relationship between the above characteristics and the amount of oxygen defects, it is important that the non-reducible dielectric ceramic of the present invention has an amount of oxygen defects of 10'7 to 1019/c+4, particularly 1017 to 10111/ld. Therefore, if the amount of oxygen defects is more than 1019/d, the effect of improving the DC bias characteristics cannot be obtained, and for porcelain with the amount of oxygen defects less than 1017/cd, the oxygen concentration in the atmosphere during firing must be considerably high. This is undesirable because the Ni internal electrodes may be oxidized.

なお、本発明における酸素欠陥量は、熱重量法に基づく
もので還元雰囲気下で焼成された磁器を1000℃の大
気中で熱処理を行い、その磁器に充分に酸素を供給させ
て飽和状態(この時の酸素欠陥濃度をゼロと考える)と
し、熱処理前後の磁器の重量差(Δm)より、酸素欠陥
量(■。)を次式(3)%式%(3) 式中、ρ :磁器密度(!=i6g/d)NA:アボガ
ドロ数(#6.022 X 1023/mol)河0:
酸素の原子量(15,999g/mol)に基づいて算
出したものである。
In addition, the amount of oxygen defects in the present invention is based on the thermogravimetric method. Porcelain fired in a reducing atmosphere is heat-treated in the atmosphere at 1000°C, and the porcelain is sufficiently supplied with oxygen to reach a saturated state (this (assuming that the oxygen defect concentration at (!=i6g/d) NA: Avogadro's number (#6.022 x 1023/mol) River 0:
It was calculated based on the atomic weight of oxygen (15,999 g/mol).

磁器中の酸素欠陥量は、主として磁器の焼成時の酸素分
圧や冷却時の酸素アニール条件等に依存する他、前述の
説明からも明らかなようにアクセプタ型添加物の添加量
にも大きく依存する。その他にBaTiO3原料粉末の
粉体物性によっても変化することから、これらを総合的
に制御することが必要である。例えば、原料粉末におい
てはその球型度が1に近い原料を用いる程磁器中の酸素
欠陥量は減少する傾向にある。
The amount of oxygen defects in porcelain mainly depends on the oxygen partial pressure during firing of the porcelain and the oxygen annealing conditions during cooling, and as is clear from the above explanation, it also greatly depends on the amount of acceptor type additives added. do. In addition, since it changes depending on the powder physical properties of the BaTiO3 raw material powder, it is necessary to comprehensively control these. For example, the amount of oxygen vacancies in the porcelain tends to decrease as raw material powder whose sphericity is closer to 1 is used.

また、本発明の非還元性誘電体磁器は、BaTiOsを
主体とするものであるが、酸素欠陥量を前述した範囲に
設定することを除き、誘電率や温度特性等の他の誘電特
性を改良することを目的として公知の前述した添加物を
添加しても何ら差し支えないが、BaTi0.単独では
絶縁抵抗が著しく劣化し、好ましくないため、望ましく
は全体量に対し0.1乃至10モル%の割合でMnO、
MgO、MgO−Zr0t、CaZrO3、CaTiO
sの他に希土類酸化物等を適宜加えるのがよい。
In addition, although the non-reducible dielectric ceramic of the present invention is mainly made of BaTiOs, other dielectric properties such as dielectric constant and temperature characteristics are improved, except for setting the amount of oxygen vacancies within the above-mentioned range. There is no problem in adding the above-mentioned known additives for the purpose of BaTi0. If used alone, the insulation resistance will deteriorate significantly, which is undesirable. Therefore, it is preferable to use MnO in a proportion of 0.1 to 10 mol% based on the total amount.
MgO, MgO-Zr0t, CaZrO3, CaTiO
In addition to s, it is preferable to add a rare earth oxide or the like as appropriate.

以下、本発明を次の例で説明する。The invention will now be explained with the following examples.

(実施例) BaTiO,原料として球型度が約1の平均1μの結晶
性に優れた粉末を用い、これに添加物としてMgO1M
n01さらにMgO−ZrO,を用いて第1表の割合で
秤量し、これらをボールミルにて湿式粉砕、混合し、乾
燥後造粒して顆粒を1 ton/cm2の圧力でプレス
成形し、12mmφX1mmtの特性評価用ダブレット
並びに、酸素欠陥量測定用タブレットを作製した。
(Example) BaTiO, a powder with excellent crystallinity with a sphericity of about 1 and an average size of 1μ, was used as a raw material, and MgO1M was added as an additive.
n01 Furthermore, MgO-ZrO was weighed in the proportions shown in Table 1, wet-pulverized and mixed in a ball mill, dried and granulated, and the granules were press-molded at a pressure of 1 ton/cm2 to form 12 mmφ A doublet for evaluating characteristics and a tablet for measuring the amount of oxygen vacancies were prepared.

これらのタブレットを400℃で脱パイ後、焼成温度並
びに焼成雰囲気中の酸素分圧を第1表に示す条件に設定
して焼成を行った。
After depyrining these tablets at 400° C., they were fired by setting the firing temperature and oxygen partial pressure in the firing atmosphere to the conditions shown in Table 1.

得られた磁器に対し、酸素欠陥量を次のようにして測定
した。
The amount of oxygen defects in the obtained porcelain was measured as follows.

まず、得られた磁器の円筒部を研磨し、アセトン中で超
音波洗浄し、150℃で1時間乾燥する。
First, the cylindrical part of the obtained porcelain is polished, ultrasonically cleaned in acetone, and dried at 150° C. for 1 hour.

その後の磁器の重量をマイクロ天秤にて測定する。The weight of the porcelain is then measured using a microbalance.

測定後、磁器を1000℃の空気中で 時間熱処理後再
度、マイクロ天秤にて重量測定し、熱処理前後の重量差
(Δm)を算出し、前述した式(3)により酸素欠陥量
を算出した。
After the measurement, the porcelain was heat-treated in air at 1000° C. for an hour, then weighed again using a microbalance, the weight difference (Δm) before and after the heat treatment was calculated, and the amount of oxygen defects was calculated using the above-mentioned formula (3).

一方、特性評価用磁器に対しては、誘電率、絶縁抵抗を
室温で24時間放置後、周波数1.0KHz、入力信号
レベル1.OVr+++s 、直流電圧50V印加の条
件で、さらに電圧特性は1m+aあたり1.3KVの電
圧を磁器に印加した状態での静電容量の印加時間にょる
変化をAC=IKHz、 2V/mmにて10000秒
まで測定し、1000秒からtoooo秒までの容量の
変化率を算出した。結果は第1表に示す。
On the other hand, the dielectric constant and insulation resistance of the porcelain for characteristic evaluation were determined after being left at room temperature for 24 hours, at a frequency of 1.0 KHz, and an input signal level of 1. OVr+++s, under the condition of applying a DC voltage of 50 V, and further voltage characteristics, the change in capacitance due to the application time with a voltage of 1.3 KV per 1 m+a applied to the porcelain, AC = IKHz, 2 V/mm for 10,000 seconds The rate of change in capacity from 1000 seconds to too many seconds was calculated. The results are shown in Table 1.

(以下余白) 第1表において、酸素欠陥量と電圧特性との関係を第1
図に示した。
(Left below) In Table 1, the relationship between the amount of oxygen vacancies and voltage characteristics is shown in Table 1.
Shown in the figure.

第1表によれば、酸素欠陥量が10′9個/cyh”を
越えるNα2,3.7の試料はいずれも電圧特性の変化
率が大きいことがわかる。また、BaTi0i単味では
酸素欠陥量は本発明の範囲にはあるものの他の絶縁抵抗
が低いために、他の酸化物の添加により改善する必要が
ある。
According to Table 1, it can be seen that the rate of change in voltage characteristics is large for all samples with Nα2, 3.7, in which the amount of oxygen vacancies exceeds 10'9/cyh. Although it is within the scope of the present invention, other insulation resistances are low, so it is necessary to improve it by adding other oxides.

これに対し、本発明の試料Nα1.4,5.6はいずれ
も優れたDCバイアス特性を示すと同時に誘電率、絶縁
抵抗ともに満足すべき結果を得、特に阻6の試料は最も
優れていた。
On the other hand, samples Nα1.4 and Nα5.6 of the present invention both showed excellent DC bias characteristics, and at the same time obtained satisfactory results in both dielectric constant and insulation resistance, and sample Nα6 in particular was the most excellent. .

(発明の効果) 以上詳述した通り、本発明の非還元性誘電体磁器はその
酸素欠陥量を特定の範囲に設定することにより、高絶縁
抵抗を有しながらも電圧特性を改善することができるこ
とから、温度安定型のニッケル等の卑金属を内部電極と
する積層コンデンサの実用化を大きく推進することがで
きる。
(Effects of the Invention) As detailed above, the non-reducible dielectric ceramic of the present invention can improve voltage characteristics while having high insulation resistance by setting the amount of oxygen defects within a specific range. As a result, the practical application of multilayer capacitors using temperature-stable base metals such as nickel as internal electrodes can be greatly promoted.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は酸素欠陥量と電圧特性との関係を示した図であ
る。
FIG. 1 is a diagram showing the relationship between the amount of oxygen vacancies and voltage characteristics.

Claims (1)

【特許請求の範囲】[Claims] (1)チタン酸バリウムを主成分とし、他に金属酸化物
を含む非還元性誘電体磁器において、空気中、1000
℃での熱処理前後の重量差に基づいて算出される磁器中
の酸素欠陥量が10^7〜10^1^9個/cm^3で
あることを特徴とする非還元性誘電体磁器。
(1) In non-reducible dielectric porcelain whose main component is barium titanate and which also contains metal oxides,
Non-reducible dielectric porcelain, characterized in that the amount of oxygen defects in the porcelain calculated based on the weight difference before and after heat treatment at °C is 10^7 to 10^1^9/cm^3.
JP1256147A 1989-09-29 1989-09-29 Non-reducing dielectric porcelain Expired - Fee Related JP2694366B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1256147A JP2694366B2 (en) 1989-09-29 1989-09-29 Non-reducing dielectric porcelain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1256147A JP2694366B2 (en) 1989-09-29 1989-09-29 Non-reducing dielectric porcelain

Publications (2)

Publication Number Publication Date
JPH03119608A true JPH03119608A (en) 1991-05-22
JP2694366B2 JP2694366B2 (en) 1997-12-24

Family

ID=17288558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1256147A Expired - Fee Related JP2694366B2 (en) 1989-09-29 1989-09-29 Non-reducing dielectric porcelain

Country Status (1)

Country Link
JP (1) JP2694366B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182011A (en) * 2008-01-29 2009-08-13 Taiyo Yuden Co Ltd Stacked ceramic capacitor and method of manufacturing the same
JP2010258028A (en) * 2009-04-21 2010-11-11 Murata Mfg Co Ltd Electronic component
JP2014165447A (en) * 2013-02-27 2014-09-08 Kyocera Corp Multilayer ceramic capacitor
JP2017005020A (en) * 2015-06-05 2017-01-05 株式会社村田製作所 Method of manufacturing multilayer ceramic capacitor
WO2023120173A1 (en) * 2021-12-23 2023-06-29 京セラ株式会社 Multilayer ceramic electronic component

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182011A (en) * 2008-01-29 2009-08-13 Taiyo Yuden Co Ltd Stacked ceramic capacitor and method of manufacturing the same
JP2010258028A (en) * 2009-04-21 2010-11-11 Murata Mfg Co Ltd Electronic component
JP2014165447A (en) * 2013-02-27 2014-09-08 Kyocera Corp Multilayer ceramic capacitor
JP2017005020A (en) * 2015-06-05 2017-01-05 株式会社村田製作所 Method of manufacturing multilayer ceramic capacitor
WO2023120173A1 (en) * 2021-12-23 2023-06-29 京セラ株式会社 Multilayer ceramic electronic component

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