JPS5826187B2 - コタイハツコウ − ジユコウソシ - Google Patents
コタイハツコウ − ジユコウソシInfo
- Publication number
- JPS5826187B2 JPS5826187B2 JP50063958A JP6395875A JPS5826187B2 JP S5826187 B2 JPS5826187 B2 JP S5826187B2 JP 50063958 A JP50063958 A JP 50063958A JP 6395875 A JP6395875 A JP 6395875A JP S5826187 B2 JPS5826187 B2 JP S5826187B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photodiode
- light
- electroluminescent diode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
- H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
Landscapes
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7418461A FR2273371B1 (US20050192411A1-20050901-C00001.png) | 1974-05-28 | 1974-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51105283A JPS51105283A (en) | 1976-09-17 |
JPS5826187B2 true JPS5826187B2 (ja) | 1983-06-01 |
Family
ID=9139344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50063958A Expired JPS5826187B2 (ja) | 1974-05-28 | 1975-05-28 | コタイハツコウ − ジユコウソシ |
Country Status (5)
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348351Y2 (US20050192411A1-20050901-C00001.png) * | 1983-10-11 | 1988-12-13 | ||
JPH0227096B2 (US20050192411A1-20050901-C00001.png) * | 1984-04-03 | 1990-06-14 | Sanyo Electric Co | |
JPH0338058B2 (US20050192411A1-20050901-C00001.png) * | 1986-02-01 | 1991-06-07 | Araya Ind |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021834A (en) * | 1975-12-31 | 1977-05-03 | The United States Of America As Represented By The Secretary Of The Army | Radiation-resistant integrated optical signal communicating device |
JPS5448493A (en) * | 1977-03-23 | 1979-04-17 | Toshiba Corp | Semiconductor optical device |
FR2387519A1 (fr) * | 1977-04-15 | 1978-11-10 | Thomson Csf | Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode |
FR2406896A1 (fr) * | 1977-10-18 | 1979-05-18 | Thomson Csf | Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques |
FR2408222A1 (fr) * | 1977-11-07 | 1979-06-01 | Thomson Csf | Diode emettrice et receptrice de rayons lumineux de meme longueur d'onde predeterminee et dispositif de telecommunication optique utilisant une telle diode |
US4152713A (en) * | 1977-12-05 | 1979-05-01 | Bell Telephone Laboratories, Incorporated | Unidirectional optical device and regenerator |
US4457582A (en) * | 1977-12-23 | 1984-07-03 | Elliott Brothers (London) Limited | Fibre optic terminals for use with bidirectional optical fibres |
FR2423869A1 (fr) * | 1978-04-21 | 1979-11-16 | Radiotechnique Compelec | Dispositif semiconducteur electroluminescent a recyclage de photons |
US4281253A (en) * | 1978-08-29 | 1981-07-28 | Optelecom, Inc. | Applications of dual function electro-optic transducer in optical signal transmission |
US4268756A (en) * | 1978-11-13 | 1981-05-19 | Trw Inc. | Optical transceiver |
US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
USRE31255E (en) | 1979-02-21 | 1983-05-24 | Honeywell Inc. | Light emitting and light detecting semiconductor device for interfacing with an optical fiber |
US4216486A (en) * | 1979-02-21 | 1980-08-05 | Honeywell Inc. | Light emitting and light detecting semiconductor device for interfacing with an optical fiber |
US4585934A (en) * | 1979-03-05 | 1986-04-29 | Hughes Aircraft Company | Self-calibration technique for charge-coupled device imagers |
JPS55153439A (en) * | 1979-05-18 | 1980-11-29 | Ricoh Co Ltd | Exchanger for optical information |
JPS5651884A (en) * | 1979-10-03 | 1981-05-09 | Hitachi Ltd | Light sending and recieving element |
GB2078440B (en) * | 1980-03-31 | 1984-04-18 | Nippon Telegraph & Telephone | An optoelectronic switch |
SE8004278L (sv) * | 1980-06-09 | 1981-12-10 | Asea Ab | Fiberoptiskt metdon |
JPS5730389A (en) * | 1980-07-31 | 1982-02-18 | Nec Corp | Optical communication device using optical semiconductor element for transmission and reception |
DE3046140A1 (de) * | 1980-12-06 | 1982-07-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | "signaluebertragungsverfahren, ein halbleiter-bauelement sowie ein elektro-optisches bauelement zur durchfuehrung des verfahrens" |
JPS57197881A (en) * | 1981-05-29 | 1982-12-04 | Omron Tateisi Electronics Co | Light emitting and receiving element |
US4549085A (en) * | 1983-04-14 | 1985-10-22 | Cooper Industries, Inc. | Electro-optical signal processing systems and devices |
US4773074A (en) * | 1987-02-02 | 1988-09-20 | University Of Delaware | Dual mode laser/detector diode for optical fiber transmission lines |
JPS6431134A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Driving method for pnpn optical thyristor |
US4879250A (en) * | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
US5055894A (en) * | 1988-09-29 | 1991-10-08 | The Boeing Company | Monolithic interleaved LED/PIN photodetector array |
JP2710171B2 (ja) * | 1991-02-28 | 1998-02-10 | 日本電気株式会社 | 面入出力光電融合素子 |
US5239189A (en) * | 1991-06-07 | 1993-08-24 | Eastman Kodak Company | Integrated light emitting and light detecting device |
DE69533352T2 (de) * | 1994-05-24 | 2005-07-28 | Koninklijke Philips Electronics N.V. | Optoelektronische halbleitervorrichtung mit laser und photodiode |
US5727110A (en) * | 1995-09-29 | 1998-03-10 | Rosemount Inc. | Electro-optic interface for field instrument |
US5771114A (en) * | 1995-09-29 | 1998-06-23 | Rosemount Inc. | Optical interface with safety shutdown |
DE19727633C2 (de) * | 1997-06-28 | 2001-12-20 | Vishay Semiconductor Gmbh | Bauteil zur gerichteten, bidirektionalen, optischen Datenübertragung |
US7181144B1 (en) * | 1998-07-09 | 2007-02-20 | Zilog, Inc. | Circuit design and optics system for infrared signal transceivers |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494489A (US20050192411A1-20050901-C00001.png) * | 1972-03-14 | 1974-01-16 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3283160A (en) * | 1963-11-26 | 1966-11-01 | Ibm | Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region |
GB1119525A (en) * | 1964-08-19 | 1968-07-10 | Mullard Ltd | Improvements in opto-electronic semiconductor devices |
US3748480A (en) * | 1970-11-02 | 1973-07-24 | Motorola Inc | Monolithic coupling device including light emitter and light sensor |
DE2345686A1 (de) * | 1972-09-22 | 1974-04-04 | Philips Nv | Bildwiedergabe- und/oder -umwandlungsvorrichtung |
US3814993A (en) * | 1972-11-15 | 1974-06-04 | Us Navy | Tuneable infrared photocathode |
US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
-
1974
- 1974-05-28 FR FR7418461A patent/FR2273371B1/fr not_active Expired
-
1975
- 1975-05-22 GB GB22398/75A patent/GB1512425A/en not_active Expired
- 1975-05-27 US US05/580,756 patent/US3979587A/en not_active Expired - Lifetime
- 1975-05-28 JP JP50063958A patent/JPS5826187B2/ja not_active Expired
- 1975-05-28 DE DE19752523681 patent/DE2523681A1/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494489A (US20050192411A1-20050901-C00001.png) * | 1972-03-14 | 1974-01-16 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348351Y2 (US20050192411A1-20050901-C00001.png) * | 1983-10-11 | 1988-12-13 | ||
JPH0227096B2 (US20050192411A1-20050901-C00001.png) * | 1984-04-03 | 1990-06-14 | Sanyo Electric Co | |
JPH0338058B2 (US20050192411A1-20050901-C00001.png) * | 1986-02-01 | 1991-06-07 | Araya Ind |
Also Published As
Publication number | Publication date |
---|---|
FR2273371A1 (US20050192411A1-20050901-C00001.png) | 1975-12-26 |
FR2273371B1 (US20050192411A1-20050901-C00001.png) | 1978-03-31 |
US3979587A (en) | 1976-09-07 |
JPS51105283A (en) | 1976-09-17 |
DE2523681A1 (de) | 1975-12-11 |
GB1512425A (en) | 1978-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5826187B2 (ja) | コタイハツコウ − ジユコウソシ | |
US4068252A (en) | Reversible optoelectronic semiconductor device | |
CA1317363C (en) | Dual mode light emitting diode/detector diode for optical fiber transmission lines | |
US4202000A (en) | Diode capable of alternately functioning as an emitter and detector of light of the same wavelength | |
US3959646A (en) | Avalanche photo-diodes | |
US4217598A (en) | Electroluminescent photodetector diode and busbar lines using said diode | |
CA2985057A1 (en) | Light-receiving element and optical integrated circuit | |
Eden | Heterojunction III—V alloy photodetectors for high-sensitivity 1.06-µm optical receivers | |
US5652813A (en) | Line bi-directional link | |
US5097299A (en) | Multi-bandgap single dual function light emitting/detecting diode | |
JPH02502053A (ja) | 光フアイバー伝送線のための二重モード・レーザー/検出器ダイオード | |
JPH1183619A (ja) | 受光素子及び受光素子モジュ−ル | |
EP0181391B1 (en) | Back-illuminated photodiode with wide bandgap cap layer | |
JPS6244434B2 (US20050192411A1-20050901-C00001.png) | ||
US5656831A (en) | Semiconductor photo detector | |
CA1182200A (en) | High sensitivity photon feedback photodetectors | |
US4217597A (en) | Diode which transmits and receives light-rays of the same predetermined wavelength and optical telecommunications device using such a diode | |
JPH04263475A (ja) | 半導体受光素子及びその製造方法 | |
JPS5816620B2 (ja) | 光集積回路装置 | |
JPS59149070A (ja) | 光検出器 | |
JP2723069B2 (ja) | 半導体受光素子 | |
JPS58134483A (ja) | 発光受光素子 | |
JPS6133658Y2 (US20050192411A1-20050901-C00001.png) | ||
JPS58186979A (ja) | 半導体受光発光素子 | |
JPH0719917B2 (ja) | 発光・受光集積素子 |