JPS5826187B2 - コタイハツコウ − ジユコウソシ - Google Patents

コタイハツコウ − ジユコウソシ

Info

Publication number
JPS5826187B2
JPS5826187B2 JP50063958A JP6395875A JPS5826187B2 JP S5826187 B2 JPS5826187 B2 JP S5826187B2 JP 50063958 A JP50063958 A JP 50063958A JP 6395875 A JP6395875 A JP 6395875A JP S5826187 B2 JPS5826187 B2 JP S5826187B2
Authority
JP
Japan
Prior art keywords
layer
photodiode
light
electroluminescent diode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50063958A
Other languages
English (en)
Japanese (ja)
Other versions
JPS51105283A (en
Inventor
ドウ クレモー ボードワン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS51105283A publication Critical patent/JPS51105283A/ja
Publication of JPS5826187B2 publication Critical patent/JPS5826187B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver

Landscapes

  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Optical Communication System (AREA)
JP50063958A 1974-05-28 1975-05-28 コタイハツコウ − ジユコウソシ Expired JPS5826187B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7418461A FR2273371B1 (US06262066-20010717-C00315.png) 1974-05-28 1974-05-28

Publications (2)

Publication Number Publication Date
JPS51105283A JPS51105283A (en) 1976-09-17
JPS5826187B2 true JPS5826187B2 (ja) 1983-06-01

Family

ID=9139344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50063958A Expired JPS5826187B2 (ja) 1974-05-28 1975-05-28 コタイハツコウ − ジユコウソシ

Country Status (5)

Country Link
US (1) US3979587A (US06262066-20010717-C00315.png)
JP (1) JPS5826187B2 (US06262066-20010717-C00315.png)
DE (1) DE2523681A1 (US06262066-20010717-C00315.png)
FR (1) FR2273371B1 (US06262066-20010717-C00315.png)
GB (1) GB1512425A (US06262066-20010717-C00315.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348351Y2 (US06262066-20010717-C00315.png) * 1983-10-11 1988-12-13
JPH0227096B2 (US06262066-20010717-C00315.png) * 1984-04-03 1990-06-14 Sanyo Electric Co
JPH0338058B2 (US06262066-20010717-C00315.png) * 1986-02-01 1991-06-07 Araya Ind

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021834A (en) * 1975-12-31 1977-05-03 The United States Of America As Represented By The Secretary Of The Army Radiation-resistant integrated optical signal communicating device
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device
FR2387519A1 (fr) * 1977-04-15 1978-11-10 Thomson Csf Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode
FR2406896A1 (fr) * 1977-10-18 1979-05-18 Thomson Csf Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques
FR2408222A1 (fr) * 1977-11-07 1979-06-01 Thomson Csf Diode emettrice et receptrice de rayons lumineux de meme longueur d'onde predeterminee et dispositif de telecommunication optique utilisant une telle diode
US4152713A (en) * 1977-12-05 1979-05-01 Bell Telephone Laboratories, Incorporated Unidirectional optical device and regenerator
US4457582A (en) * 1977-12-23 1984-07-03 Elliott Brothers (London) Limited Fibre optic terminals for use with bidirectional optical fibres
FR2423869A1 (fr) * 1978-04-21 1979-11-16 Radiotechnique Compelec Dispositif semiconducteur electroluminescent a recyclage de photons
US4281253A (en) * 1978-08-29 1981-07-28 Optelecom, Inc. Applications of dual function electro-optic transducer in optical signal transmission
US4268756A (en) * 1978-11-13 1981-05-19 Trw Inc. Optical transceiver
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
USRE31255E (en) 1979-02-21 1983-05-24 Honeywell Inc. Light emitting and light detecting semiconductor device for interfacing with an optical fiber
US4216486A (en) * 1979-02-21 1980-08-05 Honeywell Inc. Light emitting and light detecting semiconductor device for interfacing with an optical fiber
US4585934A (en) * 1979-03-05 1986-04-29 Hughes Aircraft Company Self-calibration technique for charge-coupled device imagers
JPS55153439A (en) * 1979-05-18 1980-11-29 Ricoh Co Ltd Exchanger for optical information
JPS5651884A (en) * 1979-10-03 1981-05-09 Hitachi Ltd Light sending and recieving element
GB2078440B (en) * 1980-03-31 1984-04-18 Nippon Telegraph & Telephone An optoelectronic switch
SE8004278L (sv) * 1980-06-09 1981-12-10 Asea Ab Fiberoptiskt metdon
JPS5730389A (en) * 1980-07-31 1982-02-18 Nec Corp Optical communication device using optical semiconductor element for transmission and reception
DE3046140A1 (de) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "signaluebertragungsverfahren, ein halbleiter-bauelement sowie ein elektro-optisches bauelement zur durchfuehrung des verfahrens"
JPS57197881A (en) * 1981-05-29 1982-12-04 Omron Tateisi Electronics Co Light emitting and receiving element
US4549085A (en) * 1983-04-14 1985-10-22 Cooper Industries, Inc. Electro-optical signal processing systems and devices
US4773074A (en) * 1987-02-02 1988-09-20 University Of Delaware Dual mode laser/detector diode for optical fiber transmission lines
JPS6431134A (en) * 1987-07-27 1989-02-01 Nec Corp Driving method for pnpn optical thyristor
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
JP2710171B2 (ja) * 1991-02-28 1998-02-10 日本電気株式会社 面入出力光電融合素子
US5239189A (en) * 1991-06-07 1993-08-24 Eastman Kodak Company Integrated light emitting and light detecting device
DE69533352T2 (de) * 1994-05-24 2005-07-28 Koninklijke Philips Electronics N.V. Optoelektronische halbleitervorrichtung mit laser und photodiode
US5727110A (en) * 1995-09-29 1998-03-10 Rosemount Inc. Electro-optic interface for field instrument
US5771114A (en) * 1995-09-29 1998-06-23 Rosemount Inc. Optical interface with safety shutdown
DE19727633C2 (de) * 1997-06-28 2001-12-20 Vishay Semiconductor Gmbh Bauteil zur gerichteten, bidirektionalen, optischen Datenübertragung
US7181144B1 (en) * 1998-07-09 2007-02-20 Zilog, Inc. Circuit design and optics system for infrared signal transceivers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494489A (US06262066-20010717-C00315.png) * 1972-03-14 1974-01-16

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3283160A (en) * 1963-11-26 1966-11-01 Ibm Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region
GB1119525A (en) * 1964-08-19 1968-07-10 Mullard Ltd Improvements in opto-electronic semiconductor devices
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
DE2345686A1 (de) * 1972-09-22 1974-04-04 Philips Nv Bildwiedergabe- und/oder -umwandlungsvorrichtung
US3814993A (en) * 1972-11-15 1974-06-04 Us Navy Tuneable infrared photocathode
US3881113A (en) * 1973-12-26 1975-04-29 Ibm Integrated optically coupled light emitter and sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494489A (US06262066-20010717-C00315.png) * 1972-03-14 1974-01-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348351Y2 (US06262066-20010717-C00315.png) * 1983-10-11 1988-12-13
JPH0227096B2 (US06262066-20010717-C00315.png) * 1984-04-03 1990-06-14 Sanyo Electric Co
JPH0338058B2 (US06262066-20010717-C00315.png) * 1986-02-01 1991-06-07 Araya Ind

Also Published As

Publication number Publication date
FR2273371A1 (US06262066-20010717-C00315.png) 1975-12-26
FR2273371B1 (US06262066-20010717-C00315.png) 1978-03-31
US3979587A (en) 1976-09-07
JPS51105283A (en) 1976-09-17
DE2523681A1 (de) 1975-12-11
GB1512425A (en) 1978-06-01

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