JPS5824202A - Microwave variable attenuator - Google Patents

Microwave variable attenuator

Info

Publication number
JPS5824202A
JPS5824202A JP12230581A JP12230581A JPS5824202A JP S5824202 A JPS5824202 A JP S5824202A JP 12230581 A JP12230581 A JP 12230581A JP 12230581 A JP12230581 A JP 12230581A JP S5824202 A JPS5824202 A JP S5824202A
Authority
JP
Japan
Prior art keywords
photoconductor
light
waveguide
attenuation
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12230581A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hachitsuka
弘之 八塚
Hiroshi Ooyama
大山 博
Yasuyuki Kondo
泰幸 近藤
Yasuo Sagi
鷺 保雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12230581A priority Critical patent/JPS5824202A/en
Publication of JPS5824202A publication Critical patent/JPS5824202A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/22Attenuating devices
    • H01P1/222Waveguide attenuators

Abstract

PURPOSE:To eliminate the need for isolated constitution from high frequencies and to facilitate reduction in size with simple constitution, by utilizing a photoconductive material as a microwave absorber. CONSTITUTION:The magnetic field coupling post of a waveguide 20 is provided with a photoconductor 21 and in the wall of the waveguide 20, a small hole 22 is formed to irradiate the photoconductor 21 with light as shown by an arrow. The small hole 22 is of adequate size for cutting the in-use frequency of the waveguide 20. Further, the photoconductor 21 uses CdS, PbS, etc., and the wavelength of irradiation light is selected in accordance with the spectral sensitivity of the photoconductor 21. Thus, light energy is controlled to control the amount of attenuation of a microwave, and the amount of attenuation is controlled by a control mechanism electrically isolated from a microwave, so that while the constitution is simplified, the size is reduced easily.

Description

【発明の詳細な説明】 本ll@は、光導電材料tマイクロ波回路に設け、光履
射によpマイタ腸液の滅真量會制御するマイ/II腋可
変減衰liI!IC関するものである。
DETAILED DESCRIPTION OF THE INVENTION This invention is based on a variable attenuation device which is provided in a photoconductive material t microwave circuit and controls the amount of intestinal fluid by light radiation. It is related to IC.

従来のTイクシ液用の可変減I[II+は、導波管。Variable reduction I [II+ is a waveguide for the conventional T-exciliary liquid.

ス)VFプ纏路畳のマイクWllra路にs 94%ダ
イオード、トランジスタ勢の半導体素子を設け、直流バ
イアス會責化させて減衰量tIII制御するものであう
禽、可変滅真器は、例えばlIi1mK示すように、ポ
ート1〜st−有す、it−+為し−タ4のポート2に
接続され、ポート1に加えられるマイタロ波信4#に、
可変減aSSの減衰量に!6じ九減衰を与えてポート墨
かb出力するtのであゐ。
S) A variable extinguisher that controls the attenuation amount tIII by installing a semiconductor element such as a 94% diode and a transistor in the microphone Wllra path of the VF loop, and controlling the attenuation amount tIII by controlling the DC bias, is shown, for example, by lIi1mK. As shown in FIG.
For variable reduction aSS attenuation! It gives 60% attenuation and outputs port black or b.

仁の可変域aSS抹例えば第2−に示す構成を有するも
のでTol、−ロm會す−キ晶し−タKll絖した導波
管4 K j(鴨ダイオード7を設け、導液管60al
t貫通し、且つ鱒電体9で輪*stL大ポスト8によ)
 、14mダイオード7Kll流バイアスを加えるもの
で、ポスト魯には11I出部によゐローパスフィルタが
形成され、マイタ■波@嗜がポスト魯を介してaii*
するのを肪止して%Ah、14sダイオード7紘ボスト
8を介して加えられる直流・(イアスによ)イ/ピーダ
yスが制御畜れ、マイク四波信号に対する減衰量が制御
される。
For example, a waveguide 4Kj (with a duck diode 7 and a liquid guide tube 60AL) having the configuration shown in the second variable range ASS may be used.
t through, and ring with the trout electric body 9*stL large post 8)
, 14m diode 7Kll current bias is added, a low pass filter is formed at the 11I output part of the post Lu, and the miter ■ wave @ is sent to the aii* via the post Lu.
Then, the direct current (I/P) applied via the 14s diode 7 and the bottom 8 is controlled, and the amount of attenuation for the microphone four-wave signal is controlled.

m5riaaマイIE!ストリツプラインで榔戚畜れ大
従来の可変減*Sで、11紘アル電す勢の基板、12ハ
マイタ■ストリツプツイン、15〜1s紘p4vhダイ
オード、16.17はバイアス端子、C1〜Cアはキャ
パシタンス、L1〜L4紘インダクタンス、11紘抵抗
であって% fli滅l1lIllI會構成してする。
m5riaa my IE! With the strip line, the conventional variable reduction *S is used, 11 Hz board, 12 hamter strip twin, 15 to 1 s Hi p4vh diode, 16.17 is the bias terminal, C1 to CA are It consists of capacitance, L1 to L4 inductance, and 11 resistance.

、(、ダイオード13〜1samバイアス端子t4.1
7に加える直流バイアスに応じてインビーダンスが制御
され、マイクロストリップライン12を伝搬するマイク
ロ波信号の減衰量が制御される。
, (, diode 13-1sam bias terminal t4.1
The impedance is controlled according to the DC bias applied to the microstrip line 12, and the amount of attenuation of the microwave signal propagating through the microstrip line 12 is controlled.

前述の如く、従来のマイクル波層の可変滅*S嬬、高周
波のeat−劣化させないように、高周波と直流と七分
麟する為の構成が必要であル、従って構造が複雑となる
と共に、小部化が容易でない欠点が参った。
As mentioned above, in order to avoid deterioration of the conventional microwave layer's variable decay*S, a structure is required to separate the high frequency and direct current, so that the structure becomes complicated and The drawback is that it is not easy to downsize.

本発−は、前述の従来の欠点を教養し危もので、光導電
#科tマイクロ波徴収体としてMJlit、て、高周波
との分離構成を不畳とし、簡単な構成によル小騰化も容
易にすることを目的とするものである。以下実施f’a
Kついて詳細Kl!明する。
The present invention overcomes the drawbacks of the conventional methods described above, and uses MJlit as a photoconductive microwave collecting body, which eliminates the separation structure from the high frequency and allows for a simple structure. The purpose is to make it easier. The following implementation f'a
Details about K! I will clarify.

嬉411 (s) 、 (1)拡本発明の一実施例の儒
断*a及び横断Iii図でToル、導波管20の磁界結
合ポストに光導電体21を設け、導波管20の鐘に小孔
22を形成し、光導電体21に矢印で示すように九を照
射するtのである。小孔22紘導波管20の使用周波数
に対してカットオフとなる大暑さに選定されるもので参
る。又光導電体21としては、C41゜Pklj。
411 (s), (1) In the perpendicular *a and cross-section III diagrams of an embodiment of the expanded invention, the photoconductor 21 is provided at the magnetic field coupling post of the waveguide 20, and the waveguide 20 is A small hole 22 is formed in the bell, and the photoconductor 21 is irradiated with a light beam as shown by the arrow. The small hole 22 is selected to have a large heat cutoff for the frequency used by the waveguide 20. Further, as the photoconductor 21, C41°Pklj.

Pklm + PkTa + Cd1la + I悌1
&等を用いることができ、照射すみ光の波長は、それら
の光導電体の分光感WILに応じて選定するものである
Pklm + PkTa + Cd1la + I 1
& etc. can be used, and the wavelength of the irradiated corner light is selected depending on the spectral sensitivity WIL of those photoconductors.

第5図−)、(1)嬬本発明の他の実施例の儒断面園及
び横断間−であうて、23は導波管、24は光導電体、
  21は小孔である。この実施例は電界績會形であ)
、第4図の確昇結會形と同様に1小孔2sを介して光導
電体24に照射する党エネルギKmじて減衰量を制御す
ることができる。
FIG. 5-), (1) Confucian cross section and cross section of another embodiment of the present invention, 23 is a waveguide, 24 is a photoconductor,
21 is a small hole. This example is an electric field experiment)
, the amount of attenuation can be controlled by the amount of energy Km irradiated onto the photoconductor 24 through one small hole 2s, as in the case of the fixed-rise assembly shown in FIG.

又菖411−)、 (&)はペイン形の本発明の実施例
の儒断面図及び横断面図であ1、導波管26の軸方向に
テーパーを有する光導電体27を設け、この光導電体2
7に光を照射する為の小孔!s管形成し大〜のである。
In addition, the irises 411-) and (&) are a cross-sectional view and a cross-sectional view of a pane-shaped embodiment of the present invention. Conductor 2
A small hole for irradiating light to 7! S-tubules are formed and large.

18 y II −)、 (&)は光導電体21.24
.27 K光を照射する為の実施例の構成を示し、同I
I(−は導波管の*soに絶縁物33を介してa光ダイ
オード31’j瀧設し、端子52 K発光ダイオード5
1の駆動電流1  N供給し、俺光ダイオード31から
の党を光導電体21、24.、27に照射させるもので
ある。この場合も、導波管の壁SOK形成する孔の大き
さは、使用周波数のカットオフとなる寸法に選定される
ものである。
18 y II −), (&) is photoconductor 21.24
.. The configuration of an embodiment for irradiating 27 K light is shown, and the same I
A photodiode 31'j is connected to *so of the waveguide via an insulator 33, and a terminal 52 is connected to the K light-emitting diode 5.
A drive current of 1 N is supplied to the photoconductor 21, 24 . , 27. In this case as well, the size of the hole forming the wall SOK of the waveguide is selected to be a cutoff of the frequency used.

又縞7図(&)は、導波管の壁64に光ファイバ35を
貫通して設け、発光ダイオード36等の光源からの光七
光ファイバ3Sを介して導波管内の光導電体21、24
.27に照射するもので、光ファイバ55の先端上球状
等の一面としてレンズ効果を持たせることが好適である
。この実施例は、発光ダイオード56等の光源の配置位
置に制約を受けることがないと共に、微小直径の光ファ
イバ55t−小孔に挿入して密封構造とすることも容易
でめる。更に第6図に示す実施例の光導電体27のよう
に、比較的面一が大暑い場合、複数個所に光フ1イノ<
55t−貫通させて光導電体27に光t−照射する構成
とすることもで自る。なお光導電体270両側のテーノ
く−はインピーダンスマツチング會とる為のもので参る
In addition, the stripes 7 (&) indicate that an optical fiber 35 is provided through the wall 64 of the waveguide, and light from a light source such as a light emitting diode 36 is transmitted through the optical fiber 3S to the photoconductor 21 within the waveguide. 24
.. 27, and it is preferable to have a lens effect as a spherical surface or the like on the tip of the optical fiber 55. In this embodiment, there is no restriction on the position of the light source such as the light emitting diode 56, and the optical fiber 55t having a small diameter can be easily inserted into the small hole to form a sealed structure. Furthermore, when the photoconductor 27 of the embodiment shown in FIG.
It is also possible to adopt a structure in which the photoconductor 27 is irradiated with light by penetrating the photoconductor 27. It should be noted that the technology on both sides of the photoconductor 270 is for impedance matching.

第8図はマイクロストリップラインに適用し九本発明の
実施例の斜視図でToル、アルンナ基板40の裏向に接
地導体41、表面にストリップライン42ヲ形成し、こ
のストリップライン42は、テーノ(−ライ/によルイ
ンピーダンスマッチングをとった光導電体4sが設けら
れ、矢印で示す光が光導電体45に照射され、減衰量の
制御が行なわれる。
FIG. 8 is a perspective view of an embodiment of the present invention applied to a microstrip line, in which a ground conductor 41 is formed on the back side of the aluminum substrate 40, and a strip line 42 is formed on the surface. A photoconductor 4s with impedance matching is provided, and light indicated by an arrow is irradiated onto the photoconductor 45 to control the amount of attenuation.

第9図は透明の基板を用μた本発明の実施例の側面図で
あ)、45は石英等の基板で、接地導体46とストリッ
プライン47とが設けられ、ストリップライン47には
第8図の実施例と同様に光導電体が設けられている。こ
の基板4sの上下面に111元ダイオード48@〜48
/等の光源が配置され、光導電体に上下面から光が照射
され、その先エネルギを制御することによル減衰量が制
御される。又複数の光1rll−配置していることによ
如、光源の数を制御するととによって光導電体への光エ
ネルギtW御することもできる。
9 is a side view of an embodiment of the present invention using a transparent substrate), 45 is a substrate made of quartz or the like, and a ground conductor 46 and a strip line 47 are provided, and the strip line 47 has an eighth A photoconductor is provided as in the illustrated embodiment. 111 diodes 48@~48 on the upper and lower surfaces of this board 4s
A light source such as . Furthermore, by arranging a plurality of light sources, the light energy TW to the photoconductor can be controlled by controlling the number of light sources.

第101i1は平衡形マイクロストリップラインに適用
し九本発明の実施例の斜視図でTo31、ス? IJツ
ブライン51に光導電体52が設けられ、矢印で示すよ
うに光導電体52に光が照射される。この場合もストリ
ップライン51を設けた基板tliX等の透別体とすれ
ば、下面からも光を照射する構成とすることができる。
No. 101i1 is a perspective view of an embodiment of the present invention applied to a balanced microstrip line. A photoconductor 52 is provided on the IJ tube line 51, and light is irradiated onto the photoconductor 52 as shown by the arrow. In this case as well, if the substrate is made of a transparent body such as the substrate tliX provided with the strip line 51, it is possible to have a configuration in which light is irradiated from the bottom surface as well.

第11図及び第12図は光導電体のパターンを示し、第
11図に於いては、基板54上のストリップラインの導
体部分55と光導電体部分56とが櫛歯状で且り櫛歯の
長さがテーパー状に変化しているパターンの場合を示し
、第12vAに於いては、基板57上のストリップライ
ンの導体部分58と光導電体部分59との境界が直線状
でない場合を示している。光照射による光導電体56.
5?の抵抗変化によυiマイク波信号に与える減衰量の
影響社、導体部分55.58と光導電体部分56.5?
との界面部分が最も大きいと考えられるところから、そ
の界面に沿った抵抗分布を変化させているものである。
11 and 12 show the pattern of the photoconductor, and in FIG. 11, the conductor portion 55 of the strip line on the substrate 54 and the photoconductor portion 56 are comb-teeth shaped. In the 12th vA pattern, the boundary between the conductor portion 58 of the strip line on the substrate 57 and the photoconductor portion 59 is not linear. ing. Photoconductor 56 by light irradiation.
5? Effect of attenuation on υi microwave signal due to resistance change of conductor section 55.58 and photoconductor section 56.5?
The resistance distribution along the interface is thought to be the largest, and the resistance distribution is changed along that interface.

鮪15図はスロットラインに適用し九本妬明の実施例を
示し、基板上の導体61.62間にスロットライン65
が形成され、光導電体64が導体61.62間に設けら
れている。電界は導体61.62間に生じるので、光導
電体64に照射する光エネルギを制御することによp1
スロクトライン65で伝搬されるマイク四波信号の減衰
量を制御することができる。
Fig. 15 shows an embodiment of the nine-line method applied to the slot line, and the slot line 65 is applied between the conductors 61 and 62 on the board.
is formed, and a photoconductor 64 is provided between the conductors 61,62. Since an electric field is generated between the conductors 61 and 62, by controlling the light energy applied to the photoconductor 64, p1
It is possible to control the amount of attenuation of the microphone four-wave signal propagated through the sloctline 65.

以上a明したように、本発−は、導波管、ストリップラ
イン、スロットライン等のマイクロ波回路内に光導電体
21.24.27.4B、 52.54.59.64 
f設け、この光導電体に発光ダイオード、レーザ。
As explained above, the present invention provides photoconductors 21.24.27.4B, 52.54.59.64 in microwave circuits such as waveguides, strip lines, and slot lines.
A light emitting diode and a laser are provided on this photoconductor.

ランプ等の光源から光を照射し、七〇光エネルギ管制御
してマイクa@の減衰量を制御するものであり、マイク
ロ波と紘電気的に分離された制御機構で減衰量を制御す
ることができるので、構成が簡単となると共に、小激化
も賽島と1k)、光導電体に入射させh党は、その強さ
の制御、照射面積の制御等の構成で、エネルギを制御す
ることができる。
Light is irradiated from a light source such as a lamp, and the amount of attenuation of the microphone a@ is controlled by controlling the 70 light energy tube, and the amount of attenuation is controlled by a control mechanism that is electrically separated from the microwave. The structure is simple, and the energy can be controlled by controlling the intensity and irradiation area of the light incident on the photoconductor. I can do it.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はt−キエレータと可変減衰器との接続説明図、
ji21i1はhの導波管形の可変減衰器の断面図、1
s5−抹従来のマイクロストリ、プライン形の可変減衰
器の説明図、第4図(sL(s)b嬉5wA(荀、(−
)及びlij図(8) l (1)林木発明のそれぞれ
異なる実施例の導波管形の可変減aSの側断11ill
I及び横断am、嬉7111−)、(−)は、導波管内
の光導電体に光を照射する為の実施例の断面図srg”
図、第9図及び第10図は本発明の実施例のマイクロス
トリップライン形の可変減衰器の係ll@1IlILび
骨護図、蕗11511及び@ 12図状本発明の実施例
のマイクロストリップライン形の可変減衰器の光導電体
のパターンの説明図、第tsgB線本尭明の実施例のス
ロットツイン形の可変減衰器の上面図で参る。 20、23.26は導波管、21.24.27.45.
52.56゜59、64 ハgill 電体、22.2
5.241 ij 小孔、 51,56゜48、〜48
/は発光ダイオード、55は光ファイバ、40、45.
54.57鉱基板、42.51.55.58はストリッ
プライン、65はスロットラインである。 特許出願人富士通株式会社 代場人弁理士玉蟲久五部 外5名 第1図     第2図 第3図 第4図 第5図 第7図 (a)     (b) 第8図 第9図 第10図 第11図
Figure 1 is an explanatory diagram of the connection between the t-chierator and the variable attenuator,
ji21i1 is a cross-sectional view of the waveguide type variable attenuator of h, 1
s5-An explanatory diagram of a conventional microstri, pline type variable attenuator, Fig. 4 (sL(s)b 5wA(荀,
) and lij diagram (8) l (1) Side section 11 ill of waveguide-shaped variable reduction aS of different embodiments of Hayashi invention
I and cross section am, 7111-), (-) are cross-sectional views of an embodiment for irradiating light to a photoconductor in a waveguide.
Figures 9 and 10 show the microstrip line type variable attenuator according to the embodiment of the present invention. This is an explanatory diagram of the pattern of the photoconductor of the type variable attenuator, and a top view of the slot twin type variable attenuator according to the embodiment of the tsgB line. 20, 23.26 are waveguides, 21.24.27.45.
52.56゜59,64 Hagill electric body, 22.2
5.241 ij small hole, 51,56°48, ~48
/ is a light emitting diode, 55 is an optical fiber, 40, 45.
54.57 is a mineral substrate, 42.51.55.58 is a strip line, and 65 is a slot line. Patent applicant Fujitsu Ltd. Representative Patent attorney Tamamushi 5 people outside the department Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 7 (a) (b) Figure 8 Figure 10 Figure 11

Claims (1)

【特許請求の範囲】[Claims] 導波管、ストリップツイン、スロッFライン勢のマイク
!11111賂内に光導電体を設け、諌党導電体に履射
す:h光エネルギを制御してマイクu波の減衰量を制御
する構成とし大ことteaとするマイタ口液可変減衰器
Waveguide, strip twin, and slot F line microphones! 11111 A miter oral fluid variable attenuator with a configuration in which a photoconductor is provided inside the wire and the light is transmitted to the opposite conductor: h The optical energy is controlled to control the amount of attenuation of the microphone U wave.
JP12230581A 1981-08-04 1981-08-04 Microwave variable attenuator Pending JPS5824202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12230581A JPS5824202A (en) 1981-08-04 1981-08-04 Microwave variable attenuator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12230581A JPS5824202A (en) 1981-08-04 1981-08-04 Microwave variable attenuator

Publications (1)

Publication Number Publication Date
JPS5824202A true JPS5824202A (en) 1983-02-14

Family

ID=14832660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12230581A Pending JPS5824202A (en) 1981-08-04 1981-08-04 Microwave variable attenuator

Country Status (1)

Country Link
JP (1) JPS5824202A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0253313U (en) * 1988-10-11 1990-04-17

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB834465A (en) * 1957-03-18 1960-05-11 Nat Res Dev Improvements in or relating to microwave modulators
US3432778A (en) * 1966-12-23 1969-03-11 Texas Instruments Inc Solid state microstripline attenuator
SU792362A2 (en) * 1979-03-20 1980-12-30 Сибирский Физико-Технический Институт Им. В.Д.Кузнецова При Томском Ордена Трудового Красного Знамени Государственном Университете Им. В.В.Куйбышева Microwave attenuator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB834465A (en) * 1957-03-18 1960-05-11 Nat Res Dev Improvements in or relating to microwave modulators
US3432778A (en) * 1966-12-23 1969-03-11 Texas Instruments Inc Solid state microstripline attenuator
SU792362A2 (en) * 1979-03-20 1980-12-30 Сибирский Физико-Технический Институт Им. В.Д.Кузнецова При Томском Ордена Трудового Красного Знамени Государственном Университете Им. В.В.Куйбышева Microwave attenuator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0253313U (en) * 1988-10-11 1990-04-17

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