JPS58225681A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS58225681A
JPS58225681A JP10870682A JP10870682A JPS58225681A JP S58225681 A JPS58225681 A JP S58225681A JP 10870682 A JP10870682 A JP 10870682A JP 10870682 A JP10870682 A JP 10870682A JP S58225681 A JPS58225681 A JP S58225681A
Authority
JP
Japan
Prior art keywords
laser
active layer
region
layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10870682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0474876B2 (enrdf_load_html_response
Inventor
Saburo Yamamoto
三郎 山本
Hiroshi Hayashi
寛 林
Morichika Yano
矢野　盛規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10870682A priority Critical patent/JPS58225681A/ja
Priority to US06/476,844 priority patent/US4546481A/en
Priority to DE8383301600T priority patent/DE3376936D1/de
Priority to EP83301600A priority patent/EP0095826B1/en
Publication of JPS58225681A publication Critical patent/JPS58225681A/ja
Publication of JPH0474876B2 publication Critical patent/JPH0474876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)
JP10870682A 1982-05-28 1982-06-23 半導体レ−ザ素子 Granted JPS58225681A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10870682A JPS58225681A (ja) 1982-06-23 1982-06-23 半導体レ−ザ素子
US06/476,844 US4546481A (en) 1982-05-28 1983-03-18 Window structure semiconductor laser
DE8383301600T DE3376936D1 (en) 1982-05-28 1983-03-22 Semiconductor laser
EP83301600A EP0095826B1 (en) 1982-05-28 1983-03-22 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10870682A JPS58225681A (ja) 1982-06-23 1982-06-23 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS58225681A true JPS58225681A (ja) 1983-12-27
JPH0474876B2 JPH0474876B2 (enrdf_load_html_response) 1992-11-27

Family

ID=14491540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10870682A Granted JPS58225681A (ja) 1982-05-28 1982-06-23 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS58225681A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289689A (ja) * 1985-06-18 1986-12-19 Mitsubishi Electric Corp 半導体発光装置
JPH02148786A (ja) * 1988-11-29 1990-06-07 Sanyo Electric Co Ltd 半導体レーザ装置
JPH02224288A (ja) * 1988-11-29 1990-09-06 Sanyo Electric Co Ltd 半導体レーザ装置
JPH0330490A (ja) * 1989-06-16 1991-02-08 Internatl Business Mach Corp <Ibm> 集積型光学的デバイスの製造方法
US7733935B2 (en) 2007-10-23 2010-06-08 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289689A (ja) * 1985-06-18 1986-12-19 Mitsubishi Electric Corp 半導体発光装置
JPH02148786A (ja) * 1988-11-29 1990-06-07 Sanyo Electric Co Ltd 半導体レーザ装置
JPH02224288A (ja) * 1988-11-29 1990-09-06 Sanyo Electric Co Ltd 半導体レーザ装置
JPH0330490A (ja) * 1989-06-16 1991-02-08 Internatl Business Mach Corp <Ibm> 集積型光学的デバイスの製造方法
US7733935B2 (en) 2007-10-23 2010-06-08 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same

Also Published As

Publication number Publication date
JPH0474876B2 (enrdf_load_html_response) 1992-11-27

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