JPS58221803A - Antireflection film for potassium chloride - Google Patents

Antireflection film for potassium chloride

Info

Publication number
JPS58221803A
JPS58221803A JP57104693A JP10469382A JPS58221803A JP S58221803 A JPS58221803 A JP S58221803A JP 57104693 A JP57104693 A JP 57104693A JP 10469382 A JP10469382 A JP 10469382A JP S58221803 A JPS58221803 A JP S58221803A
Authority
JP
Japan
Prior art keywords
film
substrate
refractive index
as2s3
potassium chloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57104693A
Other languages
Japanese (ja)
Other versions
JPS6235641B2 (en
Inventor
Takeo Miyata
宮田 威男
Takuhiro Ono
小野 拓弘
Takashi Iwabuchi
岩淵 俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57104693A priority Critical patent/JPS58221803A/en
Publication of JPS58221803A publication Critical patent/JPS58221803A/en
Publication of JPS6235641B2 publication Critical patent/JPS6235641B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

PURPOSE:To improve the optical characteristics and water resistance by successively forming an arsenic trisulfide (As2S3) film, a lead fluoride (PbF2) film and an arsenic trisulfide film on the surface of a potassium chloride (KCl) substrate. CONSTITUTION:The 1st As2S3 film 1 having 2.38 refractive index n1, a PbF2 film 2 having 1.55 refractive index n2 and the 2nd As2S3 film 3 having 2.38 refractive index n1 are successively formed on a KCl substrate 4 having 1.45 refractive index ns after polishing both sides of the substrate optically and superprecisely. The resulting antireflection film has 0.015% absorption factor to CO2 laser light of 10.6thetam wavelength, and it can be used well even under 20kW high power irradiation. When the film is tested in the environment of 45 deg.C and 95% relative humidity, it is not damaged at all even after the passage of 650hr.

Description

【発明の詳細な説明】 本発明は、炭酸ガスレーザー光(10。6波長)に対し
て抵吸収であって猫且つ0.6328um波長の有し、
さらに耐水性に優れた塩化カリウム用反射防止膜に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a carbon dioxide gas laser beam (10.6 wavelength) that has low absorption and a wavelength of 0.6328 um,
Furthermore, the present invention relates to an antireflection film for potassium chloride that has excellent water resistance.

従来、大パワーの炭酸ガスレーザー用の窓、しいて透明
であり耐水性に優れかつ大型の結晶が得られるという利
点の反面、欠点としては、高価であり、大パワー照射に
・よシ生ずる光学歪が大きく、又結晶育成時に有毒なH
2reガスを使ったシ、結晶表面研磨加工工程において
有毒なセレン系ガスを発生するなど安全対策上あつがい
にくいということが挙げられる。GaAsにあっては波
長10.6μmにおいて透明であシ、その熱伝導度がz
nSeの約3倍良いということ、さらには耐水性に優れ
ているという利点の反面直径約8crn以上の大きさの
ものが入手出来ない、可視光重畳用の波長0.6328
μmのHe −N eレーザー光を透過しないこと、高
価であること、光学歪が大きい事、さらにはヒ素(As
)という有害元素をその構成要素に含むため育成、加工
時の安全対策が必要であるという多〈の欠点を有してい
る。
Conventionally, windows for high-power carbon dioxide lasers have the advantages of being transparent, having excellent water resistance, and producing large crystals, but have the disadvantages of being expensive and having to deal with optical problems when irradiating with high power. Large strain and toxic H during crystal growth
The use of 2re gas generates toxic selenium-based gas during the crystal surface polishing process, making it difficult to handle from a safety standpoint. GaAs is transparent at a wavelength of 10.6 μm, and its thermal conductivity is z.
Although it has the advantage of being about 3 times better than nSe and has excellent water resistance, it is not available with a diameter of about 8 crn or more, and the wavelength is 0.6328 for visible light superimposition.
It does not transmit μm He-Ne laser light, is expensive, has large optical distortion, and furthermore, arsenic (As
), which has many disadvantages such as the need for safety measures during cultivation and processing because it contains harmful elements.

一方、波長10.6μm 、 0.6328μmにおい
て透明で、光学歪が小さく、毒性がなく、安価であると
いう多くの利点を持つKCIが実用透明光学部品(窓、
レンズ等)の基板として使用されない最大の理由は潮解
性があυ水に溶けるため、湿度の多い環境μmに対して
透明であるという光学的特性はもちろんのこと、耐水性
をもかねそなえることが出来るならば、上記の多くの利
点を有したKCIの窓、レンズが実現出来る事になる。
On the other hand, KCI is a practical transparent optical component (window,
The main reason why it is not used as a substrate for lenses, etc.) is that it is deliquescent and dissolves in water, so it not only has the optical property of being transparent in humid environments μm, but also has water resistance. If possible, KCI windows and lenses with many of the advantages mentioned above could be realized.

現在光学特性と耐水性を両方同時に有した反射防止膜が
存在しない状況にある。
Currently, there is no antireflection film that has both optical properties and water resistance at the same time.

本発明は光学特性と耐水性両方を満足させたKcl用反
射防止膜を提供することを目的とする。
An object of the present invention is to provide an antireflection film for Kcl that satisfies both optical properties and water resistance.

現在、米国のレーサーパヮーオプテックス社カ市販して
いるKCl窓、レンズの反射防止膜はNaF単層膜よシ
構成されている。NaFの屈折率は123とKClの屈
折率の平方根(、/TT4−5 = 1.204 )に
非常に近いために光学的膜厚nd−λ/4 = 2.6
5μm を蒸着すれば反射率としては0.05%と理想
に近い値いが期待出来る。実際に上記メーカーよシ購入
した直径1インチ、厚み5箇のNaF両面反射防止膜付
KCI窓の反射率を10.6μm波長で測定したとこが
検討される。反射防止膜の材料として満足しなければな
らない条件としては、水に溶けに<<、、。
Currently, the antireflection coatings of KCl windows and lenses sold by Racer Power Optex Co., Ltd. of the United States are composed of a single layer of NaF. The refractive index of NaF is 123, which is very close to the square root of the refractive index of KCl (,/TT4-5 = 1.204), so the optical film thickness is nd-λ/4 = 2.6.
If a thickness of 5 μm is deposited, a reflectance of 0.05% can be expected, which is close to the ideal value. The reflectance of a KCI window having a diameter of 1 inch and five thicknesses with NaF antireflection coatings on both sides, which was actually purchased from the above-mentioned manufacturer, was measured at a wavelength of 10.6 μm. The conditions that must be met for the material of the anti-reflection film are that it is soluble in water.

波長10.6μm 、 0.6328μmで透明で、基
板との密着   性が良く、さらに薄膜状になった時に
ピンホールの出来にくいアモルファス状態を示す物質が
選ばれなければならない。そこで有望な材料として三硫
化ヒ素(AS2S3)、三硫化セレ7 (As2Se3
)を代表とするカルコゲナイドガラスや四弗化トリウム
(ThF4)が挙げられる。
A material must be selected that is transparent at wavelengths of 10.6 μm and 0.6328 μm, has good adhesion to the substrate, and exhibits an amorphous state that does not easily form pinholes when formed into a thin film. Therefore, promising materials include arsenic trisulfide (AS2S3) and sere7 trisulfide (As2Se3).
) and thorium tetrafluoride (ThF4).

二層反射防止膜の構造については以下の様なものが考え
られる。
Regarding the structure of the two-layer antireflection film, the following can be considered.

’f)  KC1/GATS/A32S3”) KCl
/ A32S3/ ThF4ハ)  KCI/ A32
S3/ PbFzイ)の構造のものはいずれも カルコ
ゲナイドガあるが、ThF4は放射性物質で法律的に我
国では以上の考察によシ我々は三層構造の反射防止膜A
32S3ではさみ込み保護し、その三層膜でさらにKC
Iを保護することを本発明の基本方針とした。
'f) KC1/GATS/A32S3'') KCl
/ A32S3/ ThF4c) KCI/ A32
ThF4 has a chalcogenide structure, but ThF4 is a radioactive substance and is legally prohibited in our country based on the above considerations.
Sandwiched with 32S3 for protection, and its three-layer film provides additional KC
The basic policy of the present invention is to protect I.

効果としては、光吸収の少ないA 82 S 3がKC
Iに対して密着性が良く、かつ水に対する保護膜として
作用し、さらにその上に光吸収の少ないPbF2を附し
その欠点である水に弱い点をさらにA32S3で保護し
、かつ反射率零という反射防止膜の条件を満たすと同時
に波長0.6328μm光にも透明である大パワー用反
射防止膜を実現する。以下実施例で本発明を説明する。
As for the effect, A 82 S 3 with less light absorption is KC
It has good adhesion to I and acts as a protective film against water. Furthermore, PbF2, which has low light absorption, is added on top of it, and its disadvantage of being vulnerable to water is further protected by A32S3, and the reflectance is zero. A high-power antireflection film that satisfies the requirements for an antireflection film and is also transparent to light with a wavelength of 0.6328 μm is realized. The present invention will be explained below with reference to Examples.

第1図はKCI基板上の本発明による三層反射防止膜の
構造図である。図中4は両面が超精密に光1.029μ
mである。3は屈折率n1が2.38なる第2vo1.
16. No1Op2722)を満足する様に決定した
FIG. 1 is a structural diagram of a three-layer anti-reflection coating according to the present invention on a KCI substrate. 4 in the figure has ultra-precise light on both sides of 1.029μ
It is m. 3 has a refractive index n1 of 2.38.
16. No. 1 Op2722) was determined.

第2図、第3図、第4図にそれぞれ第一層1.第二層2
.第三層3の光学的膜厚n1dlの設定値を中1.02
9μmとし、PbF2膜上に形成される第2のA S 
2 S’3膜、の光学的厚みを変化した場合で、第2の
A 82 S 3膜の光学的厚みは1.08f1m 〜
1.154/jmの範囲において、波長10.6μmで
の反射率が0.1%程度と良好であった。
2, 3, and 4 show the first layer 1. Second layer 2
.. The setting value of the optical thickness n1dl of the third layer 3 is 1.02.
The second A S with a thickness of 9 μm and formed on the PbF2 film
2S'3 film, the optical thickness of the second A82S3 film is 1.08f1m ~
In the range of 1.154/jm, the reflectance at a wavelength of 10.6 μm was good at about 0.1%.

第3図はKCI基板上の第1のAS2S3膜の光学的厚
みを2.617μm、第2のA32S3膜の光学的厚み
を1.120μmとし、PbF2膜の光学的厚みを変化
させた場合で、PbF2膜の光学的厚みは0.998μ
m〜1.060μmの範囲において、波長10.6μm
での反射率が0.1 %程度と良好な結果をえた。
Figure 3 shows the case where the optical thickness of the first AS2S3 film on the KCI substrate is 2.617 μm, the optical thickness of the second A32S3 film is 1.120 μm, and the optical thickness of the PbF2 film is changed. The optical thickness of PbF2 film is 0.998μ
In the range of m to 1.060 μm, wavelength 10.6 μm
Good results were obtained with a reflectance of about 0.1%.

第4図はPbF2膜、第2のA S 2 S 3膜の光
学的厚みをそれぞれ1.029μm 、 1.120μ
−mとした時の、第1のA32S3膜の光学的厚みによ
る反射率の変化のようすを示したもので、第1のA32
S3膜の光学的厚みは2.538μm〜2.695μm
の範囲において、波長両面反射防止膜付の場合の全反射
率は約0.8% となり実用上杵される限界を示す。
In Figure 4, the optical thicknesses of the PbF2 film and the second A S 2 S 3 film are 1.029 μm and 1.120 μm, respectively.
This figure shows how the reflectance changes depending on the optical thickness of the first A32S3 film when -m.
The optical thickness of the S3 film is 2.538 μm to 2.695 μm
In the range of , the total reflectance in the case of wavelength double-sided anti-reflection coating is about 0.8%, which is the practical limit.

この図からも明らかな様に本実施例によるKCI用反射
防止膜の光学的厚みとしては、第1のAS2S3膜が2
.5384’m〜2.695#m、、 PbF2膜が0
.998/Jm 〜1.060/’r11.第2のA3
2S3膜が1.086/Jm 〜1.154μmの範囲
にあることが好適である。           I試
料作製用のKCI基板は米国ジャノス社製の直径1イン
チ、厚み5fiの研磨済みのものを使用し。AS2S3
用蒸着ルツボはモリブデン(MO)製のとっぶつ防止用
の穴開のふたを使用し基板温度70℃、作業圧力1.5
 X 10’ Torr 、蒸着速度12A0/SeC
で蒸着した。PbFzは白金ボート(Pt)を使用し基
板温度118℃、作業圧力3XIQ’I’orr蒸着速
度12A0/seeで蒸着した。蒸着中基板は自公転運
動し、膜厚の均一化を計、た。蒸着速度は水晶振動子を
使って制御し、蒸着膜厚は波長2.17μmの赤外光を
使用した透過型光学膜厚制御装置にて制御した。
As is clear from this figure, the optical thickness of the anti-reflection film for KCI according to this example is as follows:
.. 5384'm~2.695#m,, PbF2 film is 0
.. 998/Jm ~1.060/'r11. second A3
It is preferable that the 2S3 film has a thickness in the range of 1.086/Jm to 1.154 μm. I used a polished KCI substrate for sample preparation with a diameter of 1 inch and a thickness of 5 fi made by Janos Corporation in the United States. AS2S3
The evaporation crucible was made of molybdenum (MO) and had a lid with holes to prevent splashing, and the substrate temperature was 70℃ and the working pressure was 1.5℃.
X 10' Torr, deposition rate 12A0/SeC
It was deposited with PbFz was deposited using a platinum boat (Pt) at a substrate temperature of 118° C., a working pressure of 3XIQ'I'orr, and a deposition rate of 12A0/see. During deposition, the substrate rotated around its axis to ensure uniform film thickness. The deposition rate was controlled using a crystal oscillator, and the deposited film thickness was controlled using a transmission type optical film thickness control device using infrared light with a wavelength of 2.17 μm.

得られた試料の透過率スペクトルを第6図に示した。波
長8μmから13μmの波長領域での実測値0.12%
、0.23%、0.18係であり平均値として、0.1
7%が得られた。使用したKCI基板の平均吸収率が、
0.14%のオーダーであるので両者の差をとると両面
の反射防止膜の吸収率は0.03%程度となり非常に吸
収率の少ない反射防止膜が得られた。すなわち20 K
Wの大パワーレーザー光照射下でも発生熱のパワーは6
Wであるので十分20 KW 用の反射防止膜として使
用出来る。
The transmittance spectrum of the obtained sample is shown in FIG. Actual value 0.12% in the wavelength range from 8 μm to 13 μm
, 0.23%, 0.18 coefficient, and the average value is 0.1
7% was obtained. The average absorption rate of the KCI substrate used is
Since it is on the order of 0.14%, if we take the difference between the two, the absorption rate of the antireflection coating on both sides is about 0.03%, and an antireflection coating with very low absorption rate was obtained. i.e. 20K
Even under irradiation with the high power laser beam of W, the power of the generated heat is 6
Since it is W, it can be used as an anti-reflection film for 20 KW.

次にレーザー光の照射損傷閾値の実験を行、だ。Next, they conducted an experiment to determine the damage threshold of laser light irradiation.

レーザー光照射損傷闇値はレーザー光の照射条件、すな
わちレーザービーム径と試料の大きさとの相対的大小関
係、試料の冷却の方法、空気中か真空中か、又照射時間
等にも依存するために一義的に決めることは出来ない。
The laser light irradiation damage value depends on the laser light irradiation conditions, that is, the relative size relationship between the laser beam diameter and the sample size, the method of cooling the sample, whether it is in air or vacuum, and the irradiation time. cannot be determined unambiguously.

そこで次下の様な実験条件を設定した。Therefore, we set the following experimental conditions.

■ 照射実験は空気中で行った。■ The irradiation experiment was conducted in air.

■ 試料の冷却は自然空冷とした。■ The sample was cooled by natural air.

■ 試料の直径は1インチで、レーザービーム径は約1
+Mnである。
■ The diameter of the sample is 1 inch, and the laser beam diameter is approximately 1 inch.
+Mn.

■ レーザー光源としては500WCW炭酸ガスレーザ
ーを使用し、直径1インチ、焦点距離25インチのZn
5eメニスカスレンズにて直径約7閣のシングルモード
のレーザービームを集光し、エネルギー密度70KW/
c4のレーザー光下に試料を2分間さらした後の試料表
面を観察し評価する。
■ A 500 WCW carbon dioxide laser was used as the laser light source, and a Zn laser with a diameter of 1 inch and a focal length of 25 inches was used.
A single mode laser beam with a diameter of approximately 7 mm is focused using a 5e meniscus lens, and the energy density is 70KW/
After exposing the sample to c4 laser light for 2 minutes, the sample surface is observed and evaluated.

以上の条件下で本発明の試料の実験結果はいずれも照射
前後でその表面の変化が観察されなかった。
In the experimental results of the samples of the present invention under the above conditions, no change in the surface was observed before and after irradiation.

最後に耐湿試験結果について述べる。、研磨されたKC
Iは相対湿度が80チ以上に増加するにつれて急激に水
分を吸着し目方が増加する。そこで反射防止膜のKCl
に対す一′る耐湿能力を加速試験するその結果、本発明
Ω試料は650時間経過しても反射防止膜の損傷が見ら
れなかった。但し、反射防止膜に水滴をたらした場合に
は1分後ですでにピンホールを中心に水がしみ込み、膜
の剥離がかすかに観察される。以上の結果よシ通常の環
境下では特に表面に水を露結させない様に注意すれば、
挙する。
Finally, we will discuss the results of the moisture resistance test. , polished KC
As the relative humidity increases to 80 degrees or higher, I rapidly absorbs moisture and its weight increases. Therefore, the anti-reflection coating KCl
As a result of an accelerated test for moisture resistance against moisture, no damage to the anti-reflection coating was observed in the Ω sample of the present invention even after 650 hours. However, when water droplets are dropped on the antireflection film, the water has already seeped into the pinholes after one minute, and peeling of the film can be faintly observed. The above results show that under normal circumstances, if you are especially careful not to allow water to condense on the surface,
enumerate.

(1)  反射防止膜の波長10.6μm炭酸ガスレー
ザず実用的な反射防止膜である。
(1) The wavelength of the anti-reflection film is 10.6 μm.It is a practical anti-reflection film without carbon dioxide laser.

(3)三層それぞれの光学的膜厚をそれぞれ同時に3%
増減しても反射率は0.4チ以下におさえられる。
(3) Reduce the optical thickness of each of the three layers to 3% at the same time.
Even if it increases or decreases, the reflectance can be kept below 0.4 inches.

(4)  エネルギー密度70KW/iのレーザー光を
2分間照射しても反射防止膜は伺んら損傷を受けない。
(4) Even when irradiated with a laser beam with an energy density of 70 KW/i for 2 minutes, the anti-reflection film will not be damaged in any way.

(5)波長0.6328μmのHe=Ne レーザー光
に対して透明であるのでビームアライメントが容易であ
る。
(5) Beam alignment is easy because it is transparent to He=Ne laser light with a wavelength of 0.6328 μm.

以上要するに本発明は塩化カリウム(KCI)基   
”板の少なくとも一表面上に、第1の三硫化砒素(A8
2S3)膜、弗化鉛(pbF2)膜、第2の三硫化砒素
(A82S3)膜をこの順に形成した塩化カリウム用反
射防止膜を提供するもので、20 KW  という大パ
ワー炭酸ガスレーザーにも使用でき、光学特性
In summary, the present invention is based on potassium chloride (KCI)
``On at least one surface of the plate, a first arsenic trisulfide (A8
2S3) film, a lead fluoride (pbF2) film, and a second arsenic trisulfide (A82S3) film are formed in this order to provide an anti-reflection film for potassium chloride, which is also used for high-power carbon dioxide lasers of 20 KW. Optical properties

【図面の簡単な説明】[Brief explanation of drawings]

のA!!283の光学的膜厚を設定値より3チ増減した
場合の反射率の波長依存性を示す図、第3図は第2層の
P b F2の光学的膜厚を設定値より3%増減した場
合の反射率の波長依存性を示す図、第4図す図、第6図
は本発明の反射防止膜をKCI基板に両面蒸着して出来
たKCl窓の透過率スペクトルについてで実測値と計算
値の比較を行、た図である。 1、・・・第1のA32S3膜  2.・・・PbF2
蒸着膜3、・・・第2のA32S3膜  4、・・・K
CI基板特許出願人 工業技術院長 石板誠− 第 1 図 第2図 之皮長入(pm ) 第3図 5皮蓑へ(、um) 第4図 i皮畏λ (Pm) 第5図 ブ4パi(ζ1 人 (〕1ml 第6図 i/!畏入(Prrl)
A! ! Figure 3 shows the wavelength dependence of reflectance when the optical film thickness of 283 is increased or decreased by 3% from the set value. Figures 4 and 6 show the wavelength dependence of reflectance in various cases, and show the measured values and calculated transmittance spectra of a KCl window made by depositing the antireflection film of the present invention on both sides of a KCI substrate. This is a diagram showing a comparison of values. 1. First A32S3 film 2. ...PbF2
Vapor deposited film 3,... second A32S3 film 4,...K
CI board patent applicant Makoto Ishiita, Director of the Agency of Industrial Science and Technology Pa i (ζ1 person (〕1ml) Figure 6 i/! awe (Prrl)

Claims (1)

【特許請求の範囲】 (1)  塩化カリウム(KCI)  基板の少なくと
も一表面上に、第10三硫化砒素(A82S3)膜、弗
化鉛(pbFz)膜、第2の三硫化砒素(As2S3)
膜をこの順に形成したことを特徴とする塩化カリウム用
反射防止膜。 (2)第1の三硫化砒素素(A82S3)膜、弗化鉛(
PbF2)、第2の三硫化砒素(As2S3)膜の光学
的膜厚の値を、それぞれ2.538μm〜2.695μ
m。 0.998μm〜1.060μm 、 1.086μm
〜1.154μmに選定した特許請求の範囲第1項記載
の塩化カリウム用反射防止膜。
[Claims] (1) Potassium chloride (KCI) On at least one surface of the substrate, a tenth arsenic trisulfide (A82S3) film, a lead fluoride (pbFz) film, and a second arsenic trisulfide (As2S3) film are formed.
An antireflection film for potassium chloride, characterized in that the films are formed in this order. (2) First arsenic trisulfide (A82S3) film, lead fluoride (
PbF2) and the second arsenic trisulfide (As2S3) film have optical thickness values of 2.538 μm to 2.695 μm, respectively.
m. 0.998μm~1.060μm, 1.086μm
The antireflection film for potassium chloride according to claim 1, wherein the antireflection film is selected to have a thickness of 1.154 μm.
JP57104693A 1982-06-19 1982-06-19 Antireflection film for potassium chloride Granted JPS58221803A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57104693A JPS58221803A (en) 1982-06-19 1982-06-19 Antireflection film for potassium chloride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57104693A JPS58221803A (en) 1982-06-19 1982-06-19 Antireflection film for potassium chloride

Publications (2)

Publication Number Publication Date
JPS58221803A true JPS58221803A (en) 1983-12-23
JPS6235641B2 JPS6235641B2 (en) 1987-08-03

Family

ID=14387550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104693A Granted JPS58221803A (en) 1982-06-19 1982-06-19 Antireflection film for potassium chloride

Country Status (1)

Country Link
JP (1) JPS58221803A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263901A (en) * 1984-06-13 1985-12-27 Agency Of Ind Science & Technol Antireflection film for rotassium chloride
JPS6125103A (en) * 1984-07-14 1986-02-04 Horiba Ltd Optical parts for co2 laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075885A (en) * 1977-02-23 1978-02-28 Iowa State University Research Foundation, Inc. Rock borehole shear tester

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075885A (en) * 1977-02-23 1978-02-28 Iowa State University Research Foundation, Inc. Rock borehole shear tester

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263901A (en) * 1984-06-13 1985-12-27 Agency Of Ind Science & Technol Antireflection film for rotassium chloride
JPS6125103A (en) * 1984-07-14 1986-02-04 Horiba Ltd Optical parts for co2 laser

Also Published As

Publication number Publication date
JPS6235641B2 (en) 1987-08-03

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