JPS58219772A - レ−ザ形光放出デバイスおよびその製造方法 - Google Patents
レ−ザ形光放出デバイスおよびその製造方法Info
- Publication number
- JPS58219772A JPS58219772A JP58098178A JP9817883A JPS58219772A JP S58219772 A JPS58219772 A JP S58219772A JP 58098178 A JP58098178 A JP 58098178A JP 9817883 A JP9817883 A JP 9817883A JP S58219772 A JPS58219772 A JP S58219772A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser
- groove
- substrate
- confinement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 47
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000004927 clay Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8209735A FR2528234A1 (fr) | 1982-06-04 | 1982-06-04 | Dispositif semi-conducteur photoemetteur de type laser a guidage par gradient d'indice, et procede de realisation d'un tel dispositif |
| FR8209735 | 1982-06-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58219772A true JPS58219772A (ja) | 1983-12-21 |
Family
ID=9274630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58098178A Pending JPS58219772A (ja) | 1982-06-04 | 1983-06-03 | レ−ザ形光放出デバイスおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0096613B1 (OSRAM) |
| JP (1) | JPS58219772A (OSRAM) |
| KR (1) | KR840005276A (OSRAM) |
| CA (1) | CA1215160A (OSRAM) |
| DE (1) | DE3364511D1 (OSRAM) |
| FR (1) | FR2528234A1 (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2563051B1 (fr) * | 1984-04-13 | 1987-08-07 | Telecommunications Sa | Diode laser a confinement electrique par jonction inverse |
| US4634928A (en) * | 1985-04-19 | 1987-01-06 | Trw Inc. | Superluminescent light-emitting diode and related method |
| DE3728566A1 (de) * | 1987-08-27 | 1989-03-09 | Telefunken Electronic Gmbh | Optoelektronisches halbleiterbauelement |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
-
1982
- 1982-06-04 FR FR8209735A patent/FR2528234A1/fr active Granted
-
1983
- 1983-05-24 EP EP83401029A patent/EP0096613B1/fr not_active Expired
- 1983-05-24 DE DE8383401029T patent/DE3364511D1/de not_active Expired
- 1983-06-01 KR KR1019830002439A patent/KR840005276A/ko not_active Withdrawn
- 1983-06-02 CA CA000429594A patent/CA1215160A/en not_active Expired
- 1983-06-03 JP JP58098178A patent/JPS58219772A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0096613B1 (fr) | 1986-07-16 |
| FR2528234B1 (OSRAM) | 1985-05-17 |
| EP0096613A1 (fr) | 1983-12-21 |
| DE3364511D1 (en) | 1986-08-21 |
| FR2528234A1 (fr) | 1983-12-09 |
| KR840005276A (ko) | 1984-11-05 |
| CA1215160A (en) | 1986-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4371966A (en) | Heterostructure lasers with combination active strip and passive waveguide strip | |
| US4328469A (en) | High output power injection lasers | |
| EP0026062B1 (en) | A heterojunction semiconductor laser | |
| US3978428A (en) | Buried-heterostructure diode injection laser | |
| US4033796A (en) | Method of making buried-heterostructure diode injection laser | |
| US4321556A (en) | Semiconductor laser | |
| US4870468A (en) | Semiconductor light-emitting device and method of manufacturing the same | |
| US5163064A (en) | Laser diode array and manufacturing method thereof | |
| US4883771A (en) | Method of making and separating semiconductor lasers | |
| CA1218136A (en) | Semiconductor laser device | |
| JPH01164077A (ja) | 発光ダイオードおよびその製造方法 | |
| JPS5811111B2 (ja) | 半導体レ−ザ装置の製造方法 | |
| US4456999A (en) | Terrace-shaped substrate semiconductor laser | |
| US4377865A (en) | Semiconductor laser | |
| JPH0518473B2 (OSRAM) | ||
| JPS58219772A (ja) | レ−ザ形光放出デバイスおよびその製造方法 | |
| JPS6362292A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPS61242091A (ja) | 半導体発光素子 | |
| US4358850A (en) | Terraced substrate semiconductor laser | |
| JPH065969A (ja) | 半導体レーザ装置 | |
| JPH05160509A (ja) | 量子井戸構造埋め込み半導体レーザ | |
| KR100287202B1 (ko) | 반도체레이저소자및그제조방법 | |
| CA1166337A (en) | High output power injection lasers | |
| JPS6373682A (ja) | 半導体レ−ザ | |
| JPH0430758B2 (OSRAM) |