DE3364511D1 - Semiconductor laser device with a graded-index guide, and method of realising such a device - Google Patents
Semiconductor laser device with a graded-index guide, and method of realising such a deviceInfo
- Publication number
- DE3364511D1 DE3364511D1 DE8383401029T DE3364511T DE3364511D1 DE 3364511 D1 DE3364511 D1 DE 3364511D1 DE 8383401029 T DE8383401029 T DE 8383401029T DE 3364511 T DE3364511 T DE 3364511T DE 3364511 D1 DE3364511 D1 DE 3364511D1
- Authority
- DE
- Germany
- Prior art keywords
- realising
- graded
- semiconductor laser
- index guide
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8209735A FR2528234A1 (fr) | 1982-06-04 | 1982-06-04 | Dispositif semi-conducteur photoemetteur de type laser a guidage par gradient d'indice, et procede de realisation d'un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3364511D1 true DE3364511D1 (en) | 1986-08-21 |
Family
ID=9274630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383401029T Expired DE3364511D1 (en) | 1982-06-04 | 1983-05-24 | Semiconductor laser device with a graded-index guide, and method of realising such a device |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0096613B1 (de) |
JP (1) | JPS58219772A (de) |
KR (1) | KR840005276A (de) |
CA (1) | CA1215160A (de) |
DE (1) | DE3364511D1 (de) |
FR (1) | FR2528234A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2563051B1 (fr) * | 1984-04-13 | 1987-08-07 | Telecommunications Sa | Diode laser a confinement electrique par jonction inverse |
US4634928A (en) * | 1985-04-19 | 1987-01-06 | Trw Inc. | Superluminescent light-emitting diode and related method |
DE3728566A1 (de) * | 1987-08-27 | 1989-03-09 | Telefunken Electronic Gmbh | Optoelektronisches halbleiterbauelement |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
-
1982
- 1982-06-04 FR FR8209735A patent/FR2528234A1/fr active Granted
-
1983
- 1983-05-24 DE DE8383401029T patent/DE3364511D1/de not_active Expired
- 1983-05-24 EP EP83401029A patent/EP0096613B1/de not_active Expired
- 1983-06-01 KR KR1019830002439A patent/KR840005276A/ko not_active Application Discontinuation
- 1983-06-02 CA CA000429594A patent/CA1215160A/en not_active Expired
- 1983-06-03 JP JP58098178A patent/JPS58219772A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS58219772A (ja) | 1983-12-21 |
CA1215160A (en) | 1986-12-09 |
FR2528234B1 (de) | 1985-05-17 |
EP0096613A1 (de) | 1983-12-21 |
FR2528234A1 (fr) | 1983-12-09 |
KR840005276A (ko) | 1984-11-05 |
EP0096613B1 (de) | 1986-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |