JPS58217493A - 単結晶の引上方法 - Google Patents

単結晶の引上方法

Info

Publication number
JPS58217493A
JPS58217493A JP10093682A JP10093682A JPS58217493A JP S58217493 A JPS58217493 A JP S58217493A JP 10093682 A JP10093682 A JP 10093682A JP 10093682 A JP10093682 A JP 10093682A JP S58217493 A JPS58217493 A JP S58217493A
Authority
JP
Japan
Prior art keywords
melt
single crystal
magnets
generated
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10093682A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0212920B2 (en:Method
Inventor
Yasuyuki Nanishi
▲やす▼之 名西
Koji Tada
多田　紘二
Tatsusuke Nakai
龍資 中井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10093682A priority Critical patent/JPS58217493A/ja
Publication of JPS58217493A publication Critical patent/JPS58217493A/ja
Publication of JPH0212920B2 publication Critical patent/JPH0212920B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10093682A 1982-06-11 1982-06-11 単結晶の引上方法 Granted JPS58217493A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10093682A JPS58217493A (ja) 1982-06-11 1982-06-11 単結晶の引上方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10093682A JPS58217493A (ja) 1982-06-11 1982-06-11 単結晶の引上方法

Publications (2)

Publication Number Publication Date
JPS58217493A true JPS58217493A (ja) 1983-12-17
JPH0212920B2 JPH0212920B2 (en:Method) 1990-03-29

Family

ID=14287232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10093682A Granted JPS58217493A (ja) 1982-06-11 1982-06-11 単結晶の引上方法

Country Status (1)

Country Link
JP (1) JPS58217493A (en:Method)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033293A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
JPS6360191A (ja) * 1986-08-29 1988-03-16 Sumitomo Metal Ind Ltd 結晶成長方法
JPS6483356A (en) * 1987-09-25 1989-03-29 Nippon Kokan Kk Method for controlling metal flow in continuous casting mold
US5137077A (en) * 1989-06-09 1992-08-11 Nippon Steel Corporation Method of controlling flow of molten steel in mold
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
US6086671A (en) * 1997-04-25 2000-07-11 Sumitomo Sitix Corporation Method for growing a silicon single crystal
WO2000060144A1 (fr) * 1999-04-01 2000-10-12 Komatsu Denshi Kinzoku Kabushiki Kaisha Dispositif et procede de production d'un lingot monocristallin
US6258163B1 (en) 1998-09-08 2001-07-10 Sumitomo Metal Industries, Ltd. Method for producing silicon single crystal
US6291403B1 (en) 1987-03-23 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing superconducting ceramics under a magnetic field
JP2001342097A (ja) * 2000-05-30 2001-12-11 Komatsu Electronic Metals Co Ltd シリコン単結晶引上げ装置及び引上げ方法
US6733585B2 (en) 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
KR20230077146A (ko) 2021-11-25 2023-06-01 한국화학연구원 비닐리덴 플루오라이드 제조장치 및 제조방법
KR20230077168A (ko) 2021-11-25 2023-06-01 한국화학연구원 고순도의 비닐리덴 플루오라이드 제조를 위한 장치 및 방법

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033293A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
JPS6360191A (ja) * 1986-08-29 1988-03-16 Sumitomo Metal Ind Ltd 結晶成長方法
US6291403B1 (en) 1987-03-23 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing superconducting ceramics under a magnetic field
JPS6483356A (en) * 1987-09-25 1989-03-29 Nippon Kokan Kk Method for controlling metal flow in continuous casting mold
US5137077A (en) * 1989-06-09 1992-08-11 Nippon Steel Corporation Method of controlling flow of molten steel in mold
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
US6086671A (en) * 1997-04-25 2000-07-11 Sumitomo Sitix Corporation Method for growing a silicon single crystal
US6258163B1 (en) 1998-09-08 2001-07-10 Sumitomo Metal Industries, Ltd. Method for producing silicon single crystal
US6569236B1 (en) 1999-04-01 2003-05-27 Komatsu Denshi Kinzoku Kabushiki Kaisha Device and method for producing single-crystal ingot
JP2000344592A (ja) * 1999-04-01 2000-12-12 Komatsu Electronic Metals Co Ltd 単結晶インゴット製造装置及び方法
WO2000060144A1 (fr) * 1999-04-01 2000-10-12 Komatsu Denshi Kinzoku Kabushiki Kaisha Dispositif et procede de production d'un lingot monocristallin
US6733585B2 (en) 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
US6977010B2 (en) 2000-02-01 2005-12-20 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
US7244309B2 (en) 2000-02-01 2007-07-17 Sumco Techxiv Corporation Apparatus for pulling single crystal by CZ method
US7727334B2 (en) 2000-02-01 2010-06-01 Sumco Techxiv Corporation Apparatus for pulling single crystal by CZ method
US8002893B2 (en) 2000-02-01 2011-08-23 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
JP2001342097A (ja) * 2000-05-30 2001-12-11 Komatsu Electronic Metals Co Ltd シリコン単結晶引上げ装置及び引上げ方法
KR20230077146A (ko) 2021-11-25 2023-06-01 한국화학연구원 비닐리덴 플루오라이드 제조장치 및 제조방법
KR20230077168A (ko) 2021-11-25 2023-06-01 한국화학연구원 고순도의 비닐리덴 플루오라이드 제조를 위한 장치 및 방법

Also Published As

Publication number Publication date
JPH0212920B2 (en:Method) 1990-03-29

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