JPS5821301A - Resistor having positive temperature characteristic and method of producing same - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention Ii@ relates to an #:antibody with positive temperature characteristics having an electrically insulating substrate and a nickel film deposited thereon, and a method for producing the same.

Such resistors are widely used as temperature correction and temperature sensors in electronic circuits, taking advantage of the oxidation resistance and the nurturing properties of metal nickel, in which the electrical resistance value steadily increases as the temperature rises. Conventionally, in manufacturing them, a vacuum-deposited nickel thin film or a nickel piezoelectric foil was processed to have an appropriate resistance value. But, Mag! With the vapor deposition method, when considering mass production, it is difficult to make the film thick, for example, 15 ml, and in the case of piezoelectric and other k-based foils, it is difficult to make the film thicker than sstm. It was difficult to obtain. on the other hand,
In terms of application, those with a sheet resistance value of 0.1Ω/mouth to 1Ω/mouth have excellent striking properties, but this has a film thickness of 0.1! j
It is difficult to obtain a product in this range using any of the above methods because it is difficult to obtain a product in this range.
The present invention provides a method for manufacturing a resistor having a nickel film of 1 to 10 mm.

A third object of the present invention is to provide a resistor 1-* which can be manufactured by the above method and has a large temperature coefficient of resistance and stable temperature-sensitive characteristics.

First, an example of the deep vagina of the present invention will be explained using the drawings.

Electrical insulation base (15φx6mm aluminum porcelain rod)
so, ooo pieces t' 2000mff1 triangle 7x=
After applying sensitization and activating in the same manner as the conventional electroless plating method and washing with water, the following plating was applied to deposit a nickel film on the insulating substrate. .

Nickel chloride, 6 g71000
m-hydrazine hydrate-50mj710
Go ml potassium sodium tartrate-61/101
00O ammonia water,,,,,*,,,,10m1/
1000 ml (Adjust the pH to 12.5 with caustic soda and keep the temperature at 85°C ± 3°C.) Resistance elements with Tsukeru film deposited on the above insulating substrate were taken out every minute, washed with water, dried, and had an inner diameter of 1. .48φ, height 8
As a result of measuring the resistance value by inserting it into both ends of a metal cap of 1.5 mm, plate thickness Q, and 2 mm, the relationship between resistance value and plating time as shown in FIG. 1 was obtained. In the figure, the number 1 and the curve are based on data obtained with 1000 ml of the first plating III, and it can be seen that the plating speed slows down after 15 minutes due to aging of the plating solution.

In the figure, the curve with the number 2 is the plating solution 1 of the 2If1st
This is based on data obtained at 0100O.

In this case, the first plating solution was completely discarded, a new plating solution with the same composition was added, and the plating solution was layered on top of the 11th plating film. This second 20 minute stare, 0
．． A resistance value of 30 was obtained.

In the figure, the curve with the number 3 is the third plating solution 101.
This is based on data obtained at 00O, and the plating film was layered on top of the second film. A resistance value of 0.10 was obtained by the third plating for 20 minutes.

These data depend on the area of the surface of the object to be plated and the amount of plating liquid. If the plating liquid volume is vv and the surface area of the body to be plated is v8, if V/8 is large,
There is no need to replace the plating solution, and the plating time and resistance value drop are different.

Resistance element obtained as above! 200℃～35
By performing heat treatment at a temperature of 0℃ for 15 minutes to 15 hours, the temperature coefficient of resistance value between θ℃ and 100℃ is +3500.
It was confirmed that the desired value #C can be adjusted in the range from PPM/"C to +4500 PPM/℃.Here, +450
0 PPV℃ means that the resistance value increases by 0 for a temperature increase of 1℃.
．． It means an increase of 45%, 4.5% for a 16℃ difference,
A 45% change in resistance value can be obtained with a difference of 100°C. Figure 2 shows the relationship between the temperature coefficient of resistance and the heat treatment time.
, 3 shows the case of heat treatment at a temperature of 350° C. From this figure, it can be seen that if the temperature is further increased, the temperature coefficient may become even larger.

Next, 1.0.3 by manufacturing contact similar to a normal fixed resistor.
The resistance element of Ω/mouth is spiral cut to 3 at room temperature.
After adjusting the resistance value to 0.000 and painting, the finished product was made and its temperature characteristics were measured, and the results shown in Figure 3 were obtained. This figure exemplifies the change in resistance value of the resistor of the present invention due to changes in ambient temperature, and shows that the temperature characteristics are stable.

In order to investigate the reason why the resistor prepared by the above-mentioned method had a large abrasive temperature coefficient, we analyzed the components of the sample shown in Figure 1 and found that it contained 2.3% nitrogen. Therefore, to investigate the effect of nitrogen.

The following experiment was carried out: 120 nickel films were deposited on 30,000 porcelain rods similar to those used in the above example using the conventional vacuum deposition method (in this case, the nickel material was Purity is 99.99
It was 6%. ). As a result of heat-treating this material separately in vacuum and in nitrogen gas, it was confirmed that the temperature coefficient of resistance was larger when treated in nitrogen gas. Table 1 shows the 0℃
The temperature coefficient of resistance between 100°C and 100°C is shown.

Table 1 (Note) (a) The unit is PPM/'C.

(b) The heat treatment was performed at a temperature of 550°C for 15 minutes. As can be seen from this table, the average resistance temperature coefficient measured between 0°C and 100°C was +4109 P for the one treated in vacuum.
PM/''C, while the one treated in nitrogen gas was +4720 PPM/℃.The nitrogen content of the one treated in vacuum was Q, which was within the analytical error range of 1% or less. On the other hand, the nitrogen content of the one treated in silicon gas was 1.8%.From these data, the temperature-sensitive properties of the nickel film containing nitrogen are better than those without nitrogen. Therefore, the properties of this nitrogen-containing nickel film are not affected by its manufacturing method, but the range in which nitrogen contributes to s4? sensitivity is
It's not clear yet.

As mentioned above, a nitrogen-containing nickel film can also be obtained by heat treatment in nitrogen gas, but by using hydrazine during electroless plating as in the method of the present invention, a nitrogen-containing nickel film T-101 can be obtained. . Generally, when electroless plating is used, the nitrogen content is around 2%, which is sufficient for practical purposes. A nickel-containing film is obtained.

As explained above, since the resistor of the present invention has a nitrogen-containing nickel film, it has a large positive temperature coefficient of resistance and is easy to manufacture.
To provide a nitrogen-containing nickel film resistor at a low cost that has a sheet resistance value of 0.1Ω/lo to 3Ω/lo, which could not be obtained, and has a large positive temperature coefficient of resistance and stable temperature-sensing characteristics. I can do it.

Note that the present invention is not limited to the above-described embodiments, and can be modified and changed in various ways without departing from the gist of the invention as set forth in the claims. For example, the potassium sodium tartrate in the plating IHC may be replaced with other buffers.

[Brief explanation of the drawing]

FIG. 1 is a line diagram showing the relationship between the resistance value of a resistance element and plating time in an embodiment of the method of the present invention, and FIG. 2 is a line diagram showing the relationship between the temperature coefficient of resistance and heat treatment time in an embodiment of the method of the present invention. *S, Figure 3 is a curve showing the positive temperature characteristics of the resistor of the present invention! It is a diagram. Heading to Nokhe 8% (evening) - Ichiresugi Kiku 1 o'clock (trout) - Yu

Claims (1)

[Claims] 1. It has an electrical J8m substrate and a nickel film deposited thereon, and the nickel film contains nitrogen. #A resistor with positive temperature characteristics that makes it moldy. 2. Surface-activate the electrically insulating substrate, and mix the nickel salt, hydrazine hydrate, buffer, and caustic soda** with the above substrate and v11! A method for manufacturing a resistor having positive temperature characteristics, characterized in that a nickel film on which nitrogen is written is deposited on the substrate and heat-treated.