JPS58212126A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPS58212126A JPS58212126A JP9409182A JP9409182A JPS58212126A JP S58212126 A JPS58212126 A JP S58212126A JP 9409182 A JP9409182 A JP 9409182A JP 9409182 A JP9409182 A JP 9409182A JP S58212126 A JPS58212126 A JP S58212126A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- exhaust
- nozzle
- reaction
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体製造装置にかかり、符に化学反応によっ
てウェハ表面に８ｉ、、５ｉ０２ 等の薄膜を生成させ
るＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to semiconductor manufacturing equipment, and in particular to a CVD equipment for producing thin films such as 8i, 5i02, etc. on the surface of a wafer by chemical reaction.
従来よシ半導体集積回路の製作において、Ｓ１１金属、
窒化物、酸化物などのエピタキシャル成長、Ｓｉｎ、
、８ｉＮ、 などによる絶縁保護膜の作成等のために
主に用いられているＣＶＤ （Ｃｈｅｍｉｃａｌ Ｖａ
ｐｏｒＤｅｐｏｓｉｔｉｏｎ、化学的気相成長）法は、
例えば揮発性の金属ハロゲン化物や金属の有機化合物な
どの高温での気相化学反応（熱分解、水素還元、酸化、
置換反応など）によって、ウニノ・表面上に窒化物、酸
化物、炭化物、ケイ化物、ホウ化物、高融点金属、金属
、半導体などの薄膜を作成する方法である。この揮発性
化合物は、気化され一般にＨ２、Ａ ｒ ＸＮ 、など
の気体（キャリヤガス）と混合されて反応ガスとして反
応炉の内部に送り込まれ、ウェハ表面に拡散し吸着され
て化学反応により薄膜が生成される。そしてウニノ・表
面から副生成ガスが離脱して拡散退去される。そして一
般にＣＶＤ装置は、反応ガスを反応炉に輸送するキャリ
アガスの精製装置、反応ガス原料を気化する反応ガスの
気化室、反応炉（気相成長炉）、反応源ガスの回収装置
からなっているが、その中心部分は反応炉でヒーターグ
レート上に載置されたウニノ・表面上にいかにして均等
に反応ガスを供給し排気してウェハ表面に均質な薄膜を
生成させるがが重要な問題であった。Conventionally, in the production of semiconductor integrated circuits, S11 metal,
Epitaxial growth of nitrides, oxides, etc., Sin,
CVD (Chemical Vapor Deposition) is mainly used to create insulating protective films such as
The porDeposition (chemical vapor deposition) method is
For example, gas phase chemical reactions (thermal decomposition, hydrogen reduction, oxidation,
This is a method of creating thin films of nitrides, oxides, carbides, silicides, borides, high-melting point metals, metals, semiconductors, etc., on the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface. This volatile compound is vaporized and generally mixed with a gas (carrier gas) such as H2, ArxN, etc., and sent into the reactor as a reaction gas, where it is diffused and adsorbed onto the wafer surface, and a thin film is formed through a chemical reaction. generated. The by-product gas then separates from the surface and is diffused away. In general, a CVD apparatus consists of a carrier gas purification device that transports the reaction gas to the reaction furnace, a reaction gas vaporization chamber that vaporizes the reaction gas raw material, a reaction furnace (vapor phase growth furnace), and a reaction source gas recovery device. However, the central part of the process is how to uniformly supply and exhaust the reaction gas onto the wafer surface placed on the heater grate in the reactor, and the important issue is how to generate a homogeneous thin film on the wafer surface. Met.
しかるに、上述のような従来のＣＶＤ装置の反応炉内に
設けた反応済ガスを排気する排気ノズルは、一方向にの
み開放されているため排不が一方向にのみ片寄り、排気
ノズルの位置にょシ反応ガスの流れが変わってくる。そ
の結果第１図に示すように生成される薄膜の薄厚分布が
不均一になる。However, the exhaust nozzle for exhausting the reacted gas provided in the reactor of the conventional CVD apparatus as described above is open only in one direction, so the exhaust is biased in only one direction, and the position of the exhaust nozzle is The flow of the reaction gas changes. As a result, the thickness distribution of the produced thin film becomes non-uniform as shown in FIG.
従って、例えばエピタキシャル層の成長に要する時間に
差異が生じ、部分的に成長が不均一になって均一なエピ
タキシャル層が形成されず、半導体素子の歩留低下やエ
ビタキンヤル・トランジスタ等の信頼性を悪くしていた
。Therefore, for example, differences occur in the time required to grow an epitaxial layer, and the growth becomes non-uniform in some areas, making it impossible to form a uniform epitaxial layer, resulting in lower yields of semiconductor devices and worse reliability of epitaxial transistors, etc. Was.
本発明はかかる従来の難点を解消するためになされたも
ので、ＳｉＨ４等の反応ガスを反応炉へ供給し排気ノズ
ルを介して排気量ながら反応炉内を通過するヒータープ
レート呈ニ載置したウェハ表面に、Ｓｌ、８１０２等の
薄膜を気相成長させる半導体製造装置において、排気ノ
メルの側面全延長するとともに、該側面には反応ガスが
ウェハ表面に均一に流れるよう複数の排気孔を配設して
、ウェハ表面上に生成する薄膜の薄厚分布を均一にして
半導体素子の歩留９低下を防ぎ、高品質の半導体装置が
得られる半導体製造装置を提供することを目的とする。The present invention has been made in order to solve the above-mentioned problems of the conventional method, and the wafers placed on the heater plate are supplied with a reactant gas such as SiH4 to the reactor, and the wafers placed on the heater plate are passed through the reactor while being evacuated through an exhaust nozzle. In semiconductor manufacturing equipment that grows a thin film of Sl, 8102, etc. on the surface by vapor phase, the side of the exhaust gas is fully extended, and a plurality of exhaust holes are arranged on the side so that the reaction gas flows uniformly over the wafer surface. It is an object of the present invention to provide a semiconductor manufacturing apparatus which can prevent a decrease in the yield of semiconductor elements by making the thickness distribution of a thin film formed on a wafer surface uniform, and can produce high-quality semiconductor devices.
本発明はＳｉＨ４等の反応ガスを反応炉へ供給し排気ノ
ズルを介して排気しながら前記反応炉内を通過するヒー
タープレート上に載置したウェハ表面にＳｉ、８ｉ０．
等の薄膜を気相成長させる半導体製造装置において
、前記排気ノズルの側面を延長するとともに、該側面に
は前記反応ガスが前記ウェハ表面に均一に流れるよう複
数の排気孔を配設しであることを特徴とする。In the present invention, a reactant gas such as SiH4 is supplied to a reactor and exhausted through an exhaust nozzle, and Si, 8i0.
In a semiconductor manufacturing apparatus for vapor phase growth of a thin film such as the above, the side surface of the exhaust nozzle is extended, and a plurality of exhaust holes are arranged on the side surface so that the reaction gas flows uniformly over the wafer surface. It is characterized by
以下本発明を図ｍ１．．にもとづき詳細に説明する。 The present invention will be described below in Figure m1. ．． This will be explained in detail based on the following.
第２図は本発明の半導体製造装置の平面図、第３図は該
装置の反応炉上部の側面図を示したものである。その上
面にウェハ１を載置し一定の温度にコントロールされた
ヒータープレート２はボディ３の上面に配設し、矢印４
の向きに所定の速度で反応炉５（第３図）内のガスノズ
ル６を通過するようにしである。ガスノズル６には８ｉ
Ｈ，等の反応ガスを矢印７の向きに供給するガス供給管
８、反応済刀ス金排気ノズル９を介して矢印１０の向き
に排気するカス排気管１１とが設けてめる。第４図に示
すように排気ノズル９の延長した側面には排気孔１２が
設けてあり、排気ノズル９の両端はカス排気管１１と連
通されている。排気孔１２の実施例を第５図（ａｌ〜（
Ｃ１に示す。第５図（ａ）の実施例では、排気ノズル９
の両端部の口径が３０顛の場合、側面中央部の孔径１２
ａを１５竺φ とし、１２＋＋ｍψ、９誼φ、６鶴φと
両端にある孔径はど級数的に小３くしである。第５図（
ｂ）の実施例では、排気ノズル９の両端部の口径が３０
囮の場合で、１０朋φの排気孔１２ｂが２０ｍ間隔で設
けである。FIG. 2 is a plan view of the semiconductor manufacturing apparatus of the present invention, and FIG. 3 is a side view of the upper part of the reactor of the apparatus. The heater plate 2, on which the wafer 1 is placed and whose temperature is controlled at a constant temperature, is arranged on the upper surface of the body 3, and is indicated by the arrow 4.
The gas is made to pass through the gas nozzle 6 in the reactor 5 (FIG. 3) at a predetermined speed in the direction of . 8i for gas nozzle 6
A gas supply pipe 8 for supplying reactive gas such as H, etc. in the direction of the arrow 7, and a waste exhaust pipe 11 for exhausting the reacted metal in the direction of the arrow 10 through the reacted metal exhaust nozzle 9 are provided. As shown in FIG. 4, an exhaust hole 12 is provided on the extended side surface of the exhaust nozzle 9, and both ends of the exhaust nozzle 9 are communicated with a waste exhaust pipe 11. An example of the exhaust hole 12 is shown in FIG.
Shown in C1. In the embodiment of FIG. 5(a), the exhaust nozzle 9
If the diameter of both ends is 30mm, the hole diameter of the center of the side is 12mm.
Let a be 15 φ, and the hole diameters at both ends are 12++ mψ, 9 φ, and 6 crane φ, and the diameters of the holes at both ends are 3 small combs in terms of a series. Figure 5 (
In the embodiment b), the diameter of both ends of the exhaust nozzle 9 is 30 mm.
In the case of a decoy, exhaust holes 12b with a diameter of 10 mm are provided at intervals of 20 m.
そして第５図（Ｃ１の実施例は排気ノスル９の側面の任
意の箇所に糧々の径の排気孔１２Ｇが多数段けである、
上記のように構成した本発明の半導体製造装置では、ガ
ス供給管８により矢印７の向きに供給された反応ガスは
、反応炉５内のガスノズル６を通過してヒータープレー
ト２上のウェハ１の表面に拡散し吸着されて薄膜が生成
される。そして反応済ガスは排気ノズル９の側面に設け
られた複数の排気孔１２（第４図）とガス排気管１１と
にょシ矢印１０の向きに排気される。このように排気ノ
ズル９の側面に排気孔１２を設けて、一定の排気量が確
保された結果、反応ガスは従来よシも均一に反応炉５内
を流れるので、反応炉５のガスノズル９内をウェハ１が
通過して一定時曲で生成されるウェハ１上の薄膜の膜−
厚は第６図に示すように均一になった。従って第１図に
示したように従来みられたガスノズル４の位置での膜厚
分布の不均一が最小限におさえられた。5 (Embodiment C1 has multiple stages of exhaust holes 12G of suitable diameters at arbitrary locations on the side surface of the exhaust nostle 9. In the semiconductor manufacturing apparatus of the present invention configured as described above, the gas The reaction gas supplied in the direction of the arrow 7 through the supply pipe 8 passes through the gas nozzle 6 in the reactor 5, diffuses and is adsorbed onto the surface of the wafer 1 on the heater plate 2, and a thin film is produced.Then, a reaction occurs. The exhausted gas is exhausted in the direction of the arrow 10 through a plurality of exhaust holes 12 (FIG. 4) provided on the side of the exhaust nozzle 9 and the gas exhaust pipe 11. 12 to ensure a constant exhaust volume, the reaction gas flows through the reactor 5 more uniformly than before, so the wafer 1 passes through the gas nozzle 9 of the reactor 5 and curves for a certain period of time. Thin film produced on wafer 1 -
The thickness became uniform as shown in FIG. Therefore, as shown in FIG. 1, the non-uniformity of the film thickness distribution at the position of the gas nozzle 4, which was conventionally seen, was minimized.
以上説明したように、本発明による半導体製造装置ヤは
ＳｉＨ，等の反応ガスを反応炉へ供給し排気ノズルを介
して排気しながら反応炉内を通過するヒータープレート
上に載置したウェハ表面に、Ｓｉ、ＳｉＯ２等の薄膜を
曳相成長させる半導体製造装置において、排気ノズルの
側面を延長するとともに該仰１面には反応ガスがウェハ
表面に均一に流れるよう複数の排気孔を配設したので、
均一に流れる反応ガスにより一定時間で生成されるウェ
ハ上の薄膜の膜厚の分布は均質に々す、薄膜の品質が向
上し、かつパッシベーションが安定して歩留低下を防ぐ
ことができた。As explained above, the semiconductor manufacturing apparatus according to the present invention supplies a reactant gas such as SiH to a reactor, and evacuates the gas through an exhaust nozzle to the surface of a wafer placed on a heater plate that passes through the reactor. In semiconductor manufacturing equipment that grows thin films such as Si, SiO2, etc., the side surface of the exhaust nozzle is extended, and multiple exhaust holes are provided on one side of the exhaust nozzle so that the reactant gas flows uniformly over the wafer surface. ,
The thickness distribution of the thin film on the wafer, which is generated over a certain period of time by the uniformly flowing reactant gas, is uniform, the quality of the thin film is improved, and the passivation is stabilized, preventing a drop in yield.
筆１図は従来の半導体製造装置により生成された薄膜の
薄厚を示す図、第２図は本発明の半導体製造装置の平面
図、第３Ｖは第２図の装置の反応炉のガスノズルを示す
側面図、第４図は本発明の装置のガスノズル内に配設さ
れている排気ノズルを示す斜視図、第５図（ａ）〜（Ｃ
）−は本発明の装置に用いられた排気ノズルを示す斜視
甲、ｒ第６図は本発明装置により生成された薄膜の膜厚
を示す図である。
１・・・ウェハ
２・−゛・・・ヒータープレート
５・・−・反応炉
６・・・・・・ガスノズル
８・・・・ガス供給管
９・・・・排気ノズル
１１ ・・ガス排気管
１２．１２ａ、 １２ｂ、 １２ｃ −排気孔Ｃ７３１
７）代理人 弁理士 則 近 τ 佑（ほか１名）
：・ｉ″：
第 １ 図
第 ２ 図
第 ３ 図
第 ４ 図
第 ５ 図
４６ 図
距 離 −Figure 1 is a diagram showing the thin thickness of a thin film produced by a conventional semiconductor manufacturing apparatus, Figure 2 is a plan view of the semiconductor manufacturing apparatus of the present invention, and Figure 3V is a side view showing the gas nozzle of the reactor of the apparatus in Figure 2. 4 are perspective views showing the exhaust nozzle arranged in the gas nozzle of the device of the present invention, and FIG. 5(a) to (C)
)- is a perspective view showing the exhaust nozzle used in the apparatus of the present invention, and FIG. 6 is a diagram showing the thickness of the thin film produced by the apparatus of the present invention. 1... Wafer 2... Heater plate 5... Reactor 6... Gas nozzle 8... Gas supply pipe 9... Exhaust nozzle 11... Gas exhaust pipe 12.12a, 12b, 12c - Exhaust hole C731
7) Agent Patent attorney Nori Chika τ Yu (and 1 other person) :・i'': Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 46 Figure distance -
Claims (1)
介して排気しながら前記反応炉内を通過するヒータープ
レート上に載置したウェハ表面に、５１１８ｉ０２等の
薄膜を気相成長させる半導体製造装置において、前記排
気ノズルの側面を延長するとともに、該側面には前記反
応ガスが前記ウェハ表面に均一に流れるよう複数の排気
孔を配設しであることを特徴とする半導体製造装置。Semiconductor manufacturing in which a thin film such as 5118i02 is grown in vapor phase on the surface of a wafer placed on a heater plate that passes through the reactor while supplying a reaction gas such as 8 iH to the reactor and exhausting it through an exhaust nozzle. A semiconductor manufacturing apparatus characterized in that the side surface of the exhaust nozzle is extended, and a plurality of exhaust holes are provided on the side surface so that the reaction gas flows uniformly over the wafer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9409182A JPS58212126A (en) | 1982-06-03 | 1982-06-03 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9409182A JPS58212126A (en) | 1982-06-03 | 1982-06-03 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58212126A true JPS58212126A (en) | 1983-12-09 |
Family
ID=14100779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9409182A Pending JPS58212126A (en) | 1982-06-03 | 1982-06-03 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212126A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7980003B2 (en) * | 2006-01-25 | 2011-07-19 | Tokyo Electron Limited | Heat processing apparatus and heat processing method |
-
1982
- 1982-06-03 JP JP9409182A patent/JPS58212126A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7980003B2 (en) * | 2006-01-25 | 2011-07-19 | Tokyo Electron Limited | Heat processing apparatus and heat processing method |
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