JPS58211399A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS58211399A JPS58211399A JP57093807A JP9380782A JPS58211399A JP S58211399 A JPS58211399 A JP S58211399A JP 57093807 A JP57093807 A JP 57093807A JP 9380782 A JP9380782 A JP 9380782A JP S58211399 A JPS58211399 A JP S58211399A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- node
- type transistor
- redundant
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000007493 shaping process Methods 0.000 claims abstract description 7
- 230000010354 integration Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000002950 deficient Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57093807A JPS58211399A (ja) | 1982-06-01 | 1982-06-01 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57093807A JPS58211399A (ja) | 1982-06-01 | 1982-06-01 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58211399A true JPS58211399A (ja) | 1983-12-08 |
| JPS6237476B2 JPS6237476B2 (enrdf_load_stackoverflow) | 1987-08-12 |
Family
ID=14092671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57093807A Granted JPS58211399A (ja) | 1982-06-01 | 1982-06-01 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58211399A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62107500A (ja) * | 1985-11-05 | 1987-05-18 | Matsushita Electronics Corp | 半導体メモリ装置 |
| JPH03235297A (ja) * | 1990-02-13 | 1991-10-21 | Toshiba Corp | 半導体集積回路 |
-
1982
- 1982-06-01 JP JP57093807A patent/JPS58211399A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62107500A (ja) * | 1985-11-05 | 1987-05-18 | Matsushita Electronics Corp | 半導体メモリ装置 |
| JPH03235297A (ja) * | 1990-02-13 | 1991-10-21 | Toshiba Corp | 半導体集積回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237476B2 (enrdf_load_stackoverflow) | 1987-08-12 |
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