JPS58210645A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS58210645A
JPS58210645A JP57092913A JP9291382A JPS58210645A JP S58210645 A JPS58210645 A JP S58210645A JP 57092913 A JP57092913 A JP 57092913A JP 9291382 A JP9291382 A JP 9291382A JP S58210645 A JPS58210645 A JP S58210645A
Authority
JP
Japan
Prior art keywords
copper heat
heat radiating
radiating fin
elements
resin sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57092913A
Other languages
Japanese (ja)
Inventor
Yuichi Yuki
幸　友一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57092913A priority Critical patent/JPS58210645A/en
Publication of JPS58210645A publication Critical patent/JPS58210645A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PURPOSE:To enhance sealing characteristic between resin sealing material and copper heat radiating fin thereby improving reliability and reduce manufacturing cost by loading elements on the copper heat radiating fin directly in the reducing atmosphere or through a copper plating layer. CONSTITUTION:Elements 2 are electrically connected to an inner lead 3 provided on the copper heat radiating fin 1 through a bonding lead 4. These elements 2 are integratingly sealed by the resin sealing material 6 in such a way that a part of copper heat radiating fin 1 and an outer lead 5 connected to the inner lead 3 are exposed externally. As described above, such semiconductor device 10 is formed by loading elements 2 without forming a silver plated layer or nickel plated layer on the copper heat radiating fin 1. Since the resin sealing material 6 seals directly the copper heat radiating fin 1, its close contactness is high and entrance of water into inside is tightly prevented, while protecting wirings formed to the elements 2 from corrosion.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor device.

〔発明の技術的背景〕[Technical background of the invention]

従来、高出力１用の素子を内蔵した樹脂封止半導体装置
は、樹脂封止された銅製放熱フィン上に銀メッキ層或は
ニッケルメッキ層を介して素子を半田付けにより固定し
ている。このようなメッキ層を必要とするのは、銅製放
熱フィンの表面に酸化膜が形成しやすく、直接素子を半
田付けできないからである。Conventionally, in a resin-sealed semiconductor device containing a built-in element for high output 1, the element is fixed by soldering onto a resin-sealed copper heat dissipation fin via a silver plating layer or a nickel plating layer. The reason why such a plating layer is required is that an oxide film tends to form on the surface of the copper heat dissipation fin, making it impossible to directly solder elements thereto.

〔背景技術の問題点〕[Problems with background technology]

銅製放熱フィン上に銀メッキ層等を介して素子を装着し
た半導体装置は、素子を封止する樹脂封止体と銅製放熱
フィンとの密着性が悪いためその界面かつ水が浸入し、
素子上に形成されたアルミニウム等からなる配線を腐食
して信頼性を著しく低下する問題があった。また、高価
な銀やニッケルを必要とするため、製造コストが高くな
る欠点があった。In a semiconductor device in which an element is mounted on a copper heat dissipation fin through a silver plating layer or the like, water may infiltrate at the interface due to poor adhesion between the resin sealing body that seals the element and the copper heat dissipation fin.
There is a problem in that the wiring made of aluminum or the like formed on the element corrodes, resulting in a significant decrease in reliability. Furthermore, since it requires expensive silver and nickel, it has the disadvantage of increasing manufacturing costs.

〔発明の目的〕[Purpose of the invention]

本発明は、素子を封止する樹脂封止体と銅製放熱フィン
との密着性を高めて高信頼性を有すると共に、製造コス
トの低減を図った半導体装置を提供するものである。The present invention provides a semiconductor device which has high reliability by increasing the adhesion between a resin sealing body for sealing an element and a copper heat dissipating fin, and is also capable of reducing manufacturing costs.

〔発明の概要〕[Summary of the invention]

本発明は、銅製放熱フィン上に素子を還元性雰囲気中で
直接或は銅メッキ層を介して装着したことにより、樹脂
封止体と銅製放熱フィンとの密着性を高めて信頼性を向
上させると共に、製造コストの低減を図ったものである
。The present invention improves reliability by increasing the adhesion between the resin seal and the copper heat dissipation fin by mounting the element directly on the copper heat dissipation fin in a reducing atmosphere or via a copper plating layer. At the same time, the aim is to reduce manufacturing costs.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.

第１図（Ａ）は、本発明の一実施例の平面図、同図（Ｂ
）は、同実施例の正面図である。図中１は、銅製放熱フ
ィンである。銅製放熱フィン１の略中央部には、高出力
用の半導体素子２が半田層２ａを介して装着されている
。素子２は、銅製放熱フィン１上に装着されたインナー
リード３にゾンデインｒ線４を介して電気的に接続され
ている。銅製放熱フィン１上に装着されたこれらの素子
２等は、銅製放熱フィン１の一部分及びインナーリード
３に連らなるアウターリード５を外部に露出するように
して樹脂封止体６により一体に封止されている。樹脂封
止体６は、エポキシ樹脂等で形成されている。FIG. 1(A) is a plan view of an embodiment of the present invention, and FIG. 1(B) is a plan view of an embodiment of the present invention.
) is a front view of the same embodiment. In the figure, numeral 1 is a copper heat dissipation fin. A high-output semiconductor element 2 is mounted approximately at the center of the copper heat dissipation fin 1 via a solder layer 2a. The element 2 is electrically connected to an inner lead 3 mounted on a copper radiation fin 1 via a zone wire 4. These elements 2 and the like mounted on the copper heat dissipation fin 1 are integrally sealed with a resin sealing body 6 so that a part of the copper heat dissipation fin 1 and the outer lead 5 connected to the inner lead 3 are exposed to the outside. It has been stopped. The resin sealing body 6 is made of epoxy resin or the like.

このようにこの半導体装置１０は、銅製放熱フィン１上
に銀メッキ層やニッケルメッキ層を全く形成せずに、素
子２等を装着している。樹脂封止体６も直接銅製放熱フ
ィン１を封止しているのでその密着度は極めて高い。従
って、第１図（Ａ）に示す如く、銅製放熱フィン１の露
出面の周辺部と樹脂封止体６との接合界面１ａから種々
の経路１１Ｂ−、・ｌｌｃを通って水が内部に浸入する
のを防止できる。その結果、素子２１：形成された配線
等が腐食するのを防止して信頼性を著しく向上させるこ
とができる。このような耐湿性の効果を確認するために
２．５気圧の条件で所謂ＰＣＴ　（ＰｒｅｓｓｕＩｔＣ
ｏｏｋ　ｅｊｉ　Ｔｅ５ｔ　）試験を行い、５０憾不良
率の製品の発生率を調べたところ、従来の半導体装置に
比べて約イであり、遥かに優れた耐湿性を有することが
判った。In this way, in this semiconductor device 10, the elements 2 and the like are mounted on the copper heat radiation fin 1 without forming any silver plating layer or nickel plating layer. Since the resin sealing body 6 also directly seals the copper heat radiation fin 1, the degree of adhesion is extremely high. Therefore, as shown in FIG. 1(A), water infiltrates into the interior through various paths 11B-, . You can prevent it from happening. As a result, the reliability of the element 21 can be significantly improved by preventing corrosion of the formed wiring and the like. In order to confirm the effect of such moisture resistance, so-called PCT (PressuItC) was conducted under the condition of 2.5 atm.
When we conducted a test and investigated the incidence of products with a defective rate of 50%, it was found that the product had a much better moisture resistance than conventional semiconductor devices, which was about 50% defective.

また、実施例の半導体装置１０は、高価な銀メッキやニ
ッケルメッキを全く施さすＣ二素子２を直接銅製放熱フ
ィン１上に装着しているので、製造コストを著しく低減
させることができる。Further, in the semiconductor device 10 of the embodiment, the C2 element 2, which is completely plated with expensive silver or nickel, is mounted directly on the copper heat dissipation fin 1, so that the manufacturing cost can be significantly reduced.

なお、実施例では、素子２を半田層３により直接銅製放
熱フィン１に装着したものについて説明したが、半田Ｎ
１３と銅製放熱フィン１間に銅メッキ層を介在させても
良い。In the example, the element 2 was attached directly to the copper heat dissipation fin 1 through the solder layer 3.
A copper plating layer may be interposed between the heat dissipation fin 13 and the copper heat dissipation fin 1.

また、銅製放熱フィン１上に素子２を直接半田付する方
法としては、第２図に示す如く、還元性雰囲気中に銅製
放熱フィン１、素子２を設置して半田付処理を施すこと
により容易に達成することができ、同様にこの還元性雰
囲気中で銅製放熱フィン１とリードフレーム１２に形成
されたインナーリード３の装置も容易に達成することが
できる。Furthermore, as shown in Fig. 2, it is easy to solder the element 2 directly onto the copper heat dissipation fin 1 by placing the copper heat dissipation fin 1 and the element 2 in a reducing atmosphere and performing the soldering process. Similarly, the device of the copper heat radiation fins 1 and the inner leads 3 formed on the lead frame 12 can be easily achieved in this reducing atmosphere.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く、本発明に係る半導体装置によれば、
樹脂封止体と銅製放熱フィンとの密着性を高めて信頼性
を向上させると共に、製造コストを著しく低減できる等
顕著な効果を有するものである。As explained above, according to the semiconductor device according to the present invention,
This has remarkable effects such as increasing the adhesion between the resin sealing body and the copper heat dissipating fins, improving reliability, and significantly reducing manufacturing costs.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（Ａ）は、本発明の一実施例の平面図、同図（Ｂ
）は、同実施例の正面図、第２図は、銅製放熱フィン上
に素子等を装着している状態を示す　５− 斜視図である。 １・・・銅製放熱フィン、２・・・素子、２ａ・・・半
田層、３・・・インナーリード、４・・・がンデイング
線、５・・畢アウターリード、６・・・樹脂封止体、１
０・・・半導体装置、１２・・・リードフレーム出願人
代理人　弁理土鈴江武彦 　６−FIG. 1(A) is a plan view of an embodiment of the present invention, and FIG. 1(B) is a plan view of an embodiment of the present invention.
) is a front view of the same embodiment, and FIG. 2 is a perspective view showing a state in which elements etc. are mounted on a copper heat dissipation fin. DESCRIPTION OF SYMBOLS 1... Copper heat dissipation fin, 2... Element, 2a... Solder layer, 3... Inner lead, 4... Bonding wire, 5... Outer lead, 6... Resin sealing body, 1
0... Semiconductor device, 12... Lead frame applicant's attorney Takehiko Suzue, patent attorney 6-

Claims (1)

【特許請求の範囲】[Claims] （１）少なくとも表面が銅で形成された半導体素子取付
部材の所定領域に装着された半導体素子と、該素子に電
気的に接続され、リードと、該リードの前記素子との接
続部と、前記素子及び前記取付部材の所定領域を封止し
た樹脂封止体とを具備することを特徴とする半導体装置
。(1) A semiconductor element mounted in a predetermined area of a semiconductor element mounting member having at least a surface made of copper, a lead electrically connected to the element, and a connecting portion of the lead to the element; A semiconductor device comprising an element and a resin sealing body that seals a predetermined area of the mounting member.
JP57092913A 1982-05-31 1982-05-31 Semiconductor device Pending JPS58210645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57092913A JPS58210645A (en) 1982-05-31 1982-05-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57092913A JPS58210645A (en) 1982-05-31 1982-05-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS58210645A true JPS58210645A (en) 1983-12-07

Family

ID=14067719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57092913A Pending JPS58210645A (en) 1982-05-31 1982-05-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS58210645A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315763A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Resin sealed type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5315763A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Resin sealed type semiconductor device

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