JPS58209085A - Method of producing positive temperature coefficient porcelain heater - Google Patents

Method of producing positive temperature coefficient porcelain heater

Info

Publication number
JPS58209085A
JPS58209085A JP9183682A JP9183682A JPS58209085A JP S58209085 A JPS58209085 A JP S58209085A JP 9183682 A JP9183682 A JP 9183682A JP 9183682 A JP9183682 A JP 9183682A JP S58209085 A JPS58209085 A JP S58209085A
Authority
JP
Japan
Prior art keywords
porcelain
resistance
positive resistance
resistance temperature
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9183682A
Other languages
Japanese (ja)
Other versions
JPH0349192B2 (en
Inventor
杉江 順次
神谷 英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP9183682A priority Critical patent/JPS58209085A/en
Publication of JPS58209085A publication Critical patent/JPS58209085A/en
Publication of JPH0349192B2 publication Critical patent/JPH0349192B2/ja
Granted legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明14、実Vり的に常温抵抗が一定な正抵抗温度磁
器(P l’ C) −ニータのIll!I造方ン人に
関覆る。
DETAILED DESCRIPTION OF THE INVENTION Invention 14: Positive resistance temperature porcelain (P l' C) with virtually constant resistance at room temperature - Nita's Ill! I have a lot to do with people.

1抵11’L rfuf l口膏l器)1汎11αに」
、り抵抗が大ぎく変化づる。この「L抵抗馬用(磁器の
+Il貿を利用して一定記度に加熱Jるlζめのヒータ
どして正抵抗温度磁器が利用されている1゜ 従来、ilX戚抗Wlll庶141器に一タの製造方法
は、チタン酸バリウムを1休どりるレラミックス原料を
焼結して 定厚さのilE低抗低度温度磁器り、この上
、下面全面に11((電解−ツクルメッキ等のオーミッ
ク]ンクク1一層を形成し、さらにその」二に銀ベース
1へ等を焼き(J T:J 、〜対の電極を形成し、ヒ
ータを製造していlζ。
1st 11'L rfuf 1st part)
, the resistance changes greatly. Positive resistance temperature porcelain is used as a heater for this "L resistance horse (using the +Il trade of porcelain to heat up to a certain degree). The manufacturing method for Ichita is to sinter the Relamix raw material containing barium titanate for 1 hour to form a constant-thickness ILE low-resistance, low-temperature porcelain. One layer of ohmic film is formed, and then the second layer is baked onto a silver base film (JT:J, to form a pair of electrodes and a heater is manufactured).

正抵抗温度磁器ヒータの常温抵抗はヒータの出力に人ざ
く作用Jるため、限られた出力範囲内に−  2 − 保つには、ヒータの常温抵抗をぎびしく制ill ff
る必要がある。しかし正抵抗温度磁器の製造ト、常温抵
抗をある値に制御することは非常に困Hである。しlζ
がって従来の製造方法のように、発熱面全体に電極を形
成すると、正抵抗温度磁器ヒータの常温抵抗は正抵抗温
度磁器自体の常温抵抗と同一のものと4τす、4r/ら
れる正抵抗温度磁器ヒータの常温11℃抗を一定範囲に
保つことが内勤であった。
The room temperature resistance of a positive resistance temperature porcelain heater has a negative effect on the output of the heater, so in order to keep the output within a limited range, the room temperature resistance of the heater must be severely controlled.
It is necessary to However, when manufacturing positive resistance temperature porcelain, it is very difficult to control the room temperature resistance to a certain value. Shilζ
Therefore, if electrodes are formed on the entire heat generating surface as in the conventional manufacturing method, the room temperature resistance of the positive resistance temperature porcelain heater is the same as the room temperature resistance of the positive resistance temperature porcelain itself, which is 4τ, which is the positive resistance given by 4r/. My office job was to keep the room temperature of the porcelain heater within a certain range of 11 degrees Celsius.

本発明は1−記問題点を克服するもので、−生産113
位(【]ツラド内での正抵抗温度磁器の常温抵抗のバッ
フ1は比較的小さいことにね−目し、電極のオーミック
コンタクト層の面積割合、配置を工夫ザることにより、
実質上前られる正抵抗温度磁器ヒータの常温抵抗を一定
にすることを可能とした。
The present invention overcomes the problems described in 1-1.
By keeping in mind that the buffer 1 of the room temperature resistance of positive resistance temperature porcelain in the tsurad is relatively small, we devised the area ratio and arrangement of the ohmic contact layer of the electrode.
This makes it possible to keep the room temperature resistance of a positive resistance temperature porcelain heater substantially constant.

ものである。It is something.

1」なわら本発明の正抵抗温度磁器ヒータの製造方法(
,1、厚さが一定の板状正抵抗温度磁器を作る■稈、板
状1「抵抗温度磁器の上下面仝而に、該正抵抗温度磁器
の常温比抵抗に比例1)で直径あるいは幅を変化させた
ηいに一定間隔を隔てた島状、−3− あるいは帯状のA−ミツクコ1ンタクト層を形成する工
程、該正抵抗Flea I印磁器の1而の全てのオーミ
ック−1ンタク1〜Fft Jj 、1、び下面の全て
のA−ミックコンタクト層をイれぞれ覆う金属電極を形
成する工程とよりなることをQS+ mどりるものであ
る。
1", the method for manufacturing a positive resistance temperature porcelain heater of the present invention (
, 1. Making a plate-shaped positive resistance temperature porcelain with a constant thickness ■Culm, plate-shaped 1 "The upper and lower surfaces of the resistance temperature porcelain are proportional to the normal temperature specific resistance of the positive resistance temperature porcelain 1) in diameter or width. A step of forming an island-shaped, -3- or band-shaped A-mitsuku contact layer with a change in the positive resistance Flea I porcelain. .about.Fft Jj , 1, and the steps of forming metal electrodes covering all the A-mic contact layers on the lower surface, respectively.

本発明の製造yj仏て゛(,11、A−ミツクコ299
1〜層を、みか()の電極面に対しで、nいに一定間隔
を隔てた島状あるい4;L 4+’;状に形成し、島状
あるいは帯状の直径あるいは幅を変化ざ「て、仝オーミ
ックコンタクト層の而(^をかえることにより、得られ
る1゛抵抗y= ra ra&器ヒータの常温抵抗を変
化させ、実質的に常#iJ II(Ii’jが一定な正
抵抗温度磁器ヒータど刀るbので・ある。
Manufacture of the present invention (, 11, A-Mitsukuko 299
Layers 1 to 1 are formed in the form of islands or 4; By changing the structure of the ohmic contact layer (^), the obtained 1゛resistance y = ra ra & the normal temperature resistance of the heater can be changed, and the positive resistance temperature where Ii'j is substantially constant There is a porcelain heater.

<Tお、本発明の製;1117j仏で(:1十どしてオ
ーミック−lンタク1一層を一定の形状に刀る形成工程
が従来の製造方法ど異/7 Pj、他の正抵抗温度磁器
を作る工程、1.(木的イcA−ミックニ1ンタク(へ
層自体の形成工程、金属電極の形成工程は従来と同一で
ある。
<T, the production of the present invention; 1117j French (: 10, and the forming process of cutting one layer of ohmic to a certain shape is different from the conventional manufacturing method./7 Pj, other positive resistance temperature Steps for making porcelain: 1. The process of forming the layer itself and the process of forming the metal electrodes are the same as in the past.

本発明に係る板状の正抵抗温度磁器は板状の正−1− 抵抗温度磁器の上、下面に少なくとも一対の電極が形成
されるものである。このため正抵抗温度磁器の上面、下
面の面積に比較して厚さくT)の薄いムのが好ましい。
The plate-shaped positive resistance temperature porcelain according to the present invention has at least one pair of electrodes formed on the upper and lower surfaces of the plate-shaped positive-1-resistance temperature porcelain. For this reason, it is preferable that the porcelain be thin with a thickness T) compared to the area of the upper and lower surfaces of the positive resistance temperature porcelain.

板状正抵抗湿度磁器の上面、下面に形成されるA−ミッ
クコンタクト層は、一定間隔を隔てた島状あるいは帯状
である。例えば、第1図、第2図、第3図、第1図に示
1ように、板状の正抵抗温度磁器1の上下面にA−ミツ
クコ1ンタクト層を形成づる。島状とは、第1図に示す
正方形状、あるいは、丸状、星状等の形状をいう。また
線状とは幅に対して長さが良い1)ので、平行な直線で
も曲線でも、角があるものでもよい。」“た第4図に示
すように島状と線状のオーミックニ]ンタク1〜層が共
に含まれるものでもよい。
The A-mic contact layers formed on the upper and lower surfaces of the plate-shaped positive resistance humidity porcelain are in the form of islands or bands spaced apart at regular intervals. For example, as shown in FIG. 1, FIG. 2, FIG. 3, and FIG. The island shape refers to a square shape as shown in FIG. 1, a round shape, a star shape, or the like. In addition, a linear shape means that the length is better than the width (1), so it may be a parallel straight line, a curved line, or one with an angle. As shown in FIG. 4, both island-like and linear ohmic contact layers may be included.

イrお、板状の正抵抗温度磁器の形状は円形でb四角形
でも長方形でもにり、厚さに対して士、下面の面積が大
きい板状であればよい。より好ましくは正抵抗湿度磁器
−1下面の全面積S c m 2に対し、正抵抗温度磁
器の厚ざTcmの比S/Tが40以上−5− であるご5区−が好31シい、。
The shape of the plate-shaped positive resistance temperature porcelain may be circular, quadrangular or rectangular, and it may be plate-shaped with a large bottom surface area relative to its thickness. More preferably, the ratio S/T of the thickness T cm of the positive resistance temperature porcelain to the total area S cm 2 of the lower surface of the positive resistance humidity porcelain 1 is preferably 40 or more. ,.

さらにL;L 、島状のA−ミックコンタク1へ層の大
ささを代表りる、例えば直径1)cIllは厚さTOI
I+に対]ノで、1〕/丁がOlり以1−であるのが好
ましい。
Furthermore, L; L represents the size of the layer to the island-like A-mic contact 1, e.g. diameter 1) cIll is the thickness TOI
It is preferable that 1]/unit is 1- with respect to I+.

線状のΔ−ミック1ンタク1−fr4の大ぎさを代表す
る幅W Cm G;i、W//丁が0.5以十であるの
が好ましい。また相隣り合うA−ミックコンタクト層間
の距−11−Cmは、l−/ 1−が0.3以上である
のが好ましい。
It is preferable that the width W Cm G;i, W//to, which represents the size of the linear Δ-mic 1-fr4, is 0.5 or more. Further, it is preferable that the distance -11-Cm between adjacent A-mic contact layers is such that l-/1- is 0.3 or more.

これらのりYましい条イ′1を全て満足すると、電極間
のみかcノの抵抗値はA−ミツウニ1ンタク1へ層の全
面積にほぼ反比例する31、うに<rす、正抵抗温度磁
器の常温11℃抗値に比例しでオーミックコンタクト層
の全表面積を疫化2キ1!ることににす、10られる正
抵抗温度磁器ヒータのみが(」の常温抵抗値は一定にな
る、。
If all of these reasonable conditions are satisfied, the resistance value between the electrodes will be approximately inversely proportional to the total area of the layer. The total surface area of the ohmic contact layer is proportional to the resistance value at room temperature of 11℃. In particular, only the positive resistance temperature porcelain heater of 10 has a constant resistance value at room temperature.

具体的に説明1Jるど、第1の板状正抵抗温度磁器の常
温化低抗が104−ムであり、第2の板状正抵抗ffr
A Ilj &i 器)hF nJ 1l−flu I
+’t、h< 12オームFアルとする1、ここで、第
2の板状I[抵抗温度磁器の、−f’+     − 例え1、f、線状のΔ−ミツクー1ンタ91〜居の幅を
第′1の板状i[低抗濡度磁器の線状のオーミツウニ1
2491〜層の幅の]、2倍にすることにJζす、第1
.412の板状11戚抗温度磁器で作・)た正抵抗温度
磁器じ一夕のみか【ノの常温抵抗は共にほぼ等しくイ「
る1、 なお、−1記好ましい条件をはずれるほど、Δ−ミック
ユコンタクト層の全面積と電極間のみか()の抵抗1f
fiとが反比例しにくくなる。
Specifically, the first plate-shaped positive resistance temperature porcelain has a low resistance at room temperature of 104-mm, and the second plate-shaped positive resistance ffr
A Ilj &i vessel) hF nJ 1l-flu I
+'t, h< 12 ohm F Al 1, where the second plate I [resistance temperature porcelain, -f'+ - For example 1, f, linear Δ-Mitsuku 1 Inter 91 ~ The width of
2491 ~ the width of the layer], Jζ is to be doubled, the first
.. The normal temperature resistance of the positive resistance temperature porcelain made of 412 plates of 11th grade anti-temperature porcelain is almost the same.
1. It should be noted that the further out of the preferable condition -1, the greater the resistance 1f between the total area of the Δ-Mikyu contact layer and the distance between the electrodes.
fi is less likely to be inversely proportional.

A−ミック」ンタク1へ層の形成は、板状正抵抗温度磁
器の上下面に所定の島状あるいは線状のA−ミンクコン
タクト層となるべき位置に、部分活+1化ペーストをプ
リント印刷等で印刷し、その後、通常の無電解メツ−に
を行い、プリン1〜印刷した表面部のみにニッケルをメ
ッキしてオーミックコンタクト層とするものである。
Formation of the layer on the A-Mink contact layer 1 is carried out by printing, etc. a partially activated +1-containing paste on the upper and lower surfaces of the plate-shaped positive resistance temperature porcelain at the positions where the A-Mink contact layer in the form of islands or lines is to be formed. After that, a normal electroless method is applied, and nickel is plated only on the printed surface area to form an ohmic contact layer.

金属N極の形成は、従来と同様にA−ミンクコンタクト
層の上に、例えば、銀ペース1〜を焼き付けて形成する
。これにより電極間の常温抵抗がほぼ一定した正抵抗温
度磁器ヒータが得られる。
The metal N electrode is formed by baking, for example, silver paste 1 on the A-mink contact layer as in the conventional method. As a result, a positive resistance temperature porcelain heater in which the room temperature resistance between the electrodes is substantially constant can be obtained.

−7一 本発明の製造プ)θ、ぐは、イ1産ip位(ロツ1〜)
ごとに常温の比抵抗が異っても、電極形成工程で比抵抗
の不 敗が修ifされるため、所定の常温抵抗イ「1を
も’) i+−、II(抗温度磁器ヒーターが得られる
。また、ヒータどして全体が(91ぽ均 に加熱される
ため、劣化Aqの問題0牛じ<ffiい。
-71 Production of the present invention
Even if the resistivity at room temperature is different for each heater, the undefeatable resistivity is fixed in the electrode forming process. In addition, since the whole body is heated to an even temperature of 91% by using a heater, there is no problem of deterioration of Aq.

なお、A−ミツウニ1ン991〜層の面積により常温抵
抗を制御してbキー!り一温度、最大抵抗等の他の1V
i f’lは変化しイ「い、(bるいGEL、変化して
も無視できるIll′ICあり、実質上問題がない。
In addition, the room temperature resistance is controlled by the area of the A-Mitsuuni 1991~ layer and the b key is pressed! Other 1V such as temperature, maximum resistance, etc.
i f'l does not change, (brui GEL, Ill'IC which can be ignored even if it changes, so there is virtually no problem.

以−ト、実施例(JJ、すi(1,明りる。Below, Examples (JJ, Sui (1, Akiraru.

生fLIll (+7(「トンド)を宜にし!ご20℃
における比抵抗が871−ム、10A−ム、12オーム
の八〇、13o、Go31Φ類の板状正抵抗温度磁器を
用意した3、これらの温1aと抵抗の関係線図を第5図
に示す。J、たこれら3 f!Ii類の+IE抵抗温度
磁器の形状は[12+nm、4M’I Omm、I’j
jす1mmノモ(7)テアル。
Fresh fLIll (+7 ('Tondo)' please! 20℃
Platy positive resistance temperature porcelains of the 80, 13o, and Go31Φ types with specific resistances of 871-ohms, 10 A-hms, and 12 ohms were prepared3.The relationship diagram between these temperatures 1a and resistance is shown in Figure 5. . J, Takore 3 f! The shape of class II +IE resistance temperature porcelain is [12+nm, 4M'I Omm, I'j
jsu 1mm size (7) teal.

次にΔ0のロー抵抗温Ill ld& i抱の1−1下
面全面に幅1mmで1mmの間隔を隔てて甲1jに活+
Il化ペーストをプリン1〜印刷し、ぞの19.111
(電解ニッケルメメッー  8  − キで約5ミフロンA−ミツクニ=1ンタクト層を形成し
た。次にオーミック」ンタク1一層の上に銀ベース1〜
を塗り600℃で焼きイ1り金属電極を形成し、正抵抗
温度磁器ヒータΔ1を製造した。BOJffよびCoの
正抵抗温度m器については活性化ベース1〜の線状印刷
の幅、間隔を1.25mm、0.75+nm、および1
.88mmX0.62mmとし、他はAと;Jニー)た
く同様にして正抵抗温度磁器ヒータB1、C1を製造し
た。
Next, the low resistance temperature of Δ0 is applied to the lower surface of 1-1 with a width of 1 mm and an interval of 1 mm to the instep 1j.
Print the Il paste from Pudding 1 to No. 19.111
(Approximately 5 microfron A-Mitsukuni = 1 contact layer was formed using electrolytic nickel metal. Next, silver base 1 ~ 1 ~ was formed on the ohmic contact layer 1.
A metal electrode was formed by coating and baking at 600°C, and a positive resistance temperature porcelain heater Δ1 was manufactured. For BOJff and Co positive resistance temperature m devices, the width and spacing of the linear printing of activated base 1 ~ 1.25 mm, 0.75 + nm, and 1
.. Positive resistance temperature porcelain heaters B1 and C1 were manufactured in the same manner as A, except for 88 mm x 0.62 mm.

これら3種類の正抵抗温度磁器ヒータの湿度−抵抗線図
も合せて第5図に示す。第5図、符号Δ0、Δ1、は正
抵抗温度磁器ΔOおよび△0を用0たヒータ△1の線図
、BO1B+は正抵抗温度磁器[30およびBOを用い
たヒータ1B+の線図、CO、C+は正抵抗温度磁器C
OおよびCOを用いたに−タC1の縮図である。
The humidity-resistance diagrams of these three types of positive resistance temperature porcelain heaters are also shown in FIG. FIG. 5, symbols Δ0 and Δ1 are a diagram of heater Δ1 using positive resistance temperature porcelain ΔO and Δ0, BO1B+ is a diagram of heater 1B+ using positive resistance temperature porcelain [30 and BO, CO, C+ is positive resistance temperature porcelain C
A microcosm of Nita C1 using O and CO.

第5図より明らかなように3種類の正抵抗温度磁器ヒー
タΔ+、B+、C+の常温抵抗は約16オームとばぼ一
定Cあった。
As is clear from FIG. 5, the room temperature resistance of the three types of positive resistance temperature porcelain heaters Δ+, B+, and C+ was approximately constant C, approximately 16 ohms.

【図面の簡単な説明】[Brief explanation of drawings]

−9− 第1図、第2図、負)33図、第4図は本発明のA−ミ
ツクニ1ンタクト層の形状例を各々示す、オーミックニ
ー1ンタク1〜層が形成された板状正抵抗温度磁器の平
面図、第1j図(,1正If(b’i温度磁器イ1らび
に本発明の正抵抗温度磁器で・11〕られた正抵抗温度
磁器じ一タの温度〜低抗関係を示jノ線図である。 1・・・・・・11−抵抗側1α磁器 2・・・・・・A−ミック:]24911〜層1’JW
l出a 人1− =+ 夕自iFI+ tI −I Q
 a 式会礼代理人  弁理1−  大 川  宏 弁理1−1#  谷  修 弁理 1−    丸  山  明  夫−10− 第1図 2 / $2図 (1 7(2
-9- Fig. 1, Fig. 2, negative) Fig. 33 and Fig. 4 respectively show examples of the shape of the A-Mitsukuni 1 contact layer of the present invention. Plan view of resistance temperature porcelain, Fig. 1j It is a diagram showing the relationship. 1...11-resistance side 1α porcelain 2...A-Mick:]24911~layer 1'JW
louta person 1− =+ evening iFI+ tI −I Q
a Ceremony Representation Attorney 1- Hiroshi Okawa Attorney 1-1# Shuben Tani 1- Akio Maruyama-10- Figure 1 2 / Figure 2 (1 7 (2)

Claims (1)

【特許請求の範囲】[Claims] (1)厚さが一定の板状正抵抗温度磁器を作る工程、 板状正抵抗温度磁器の−に上面全面に、該正抵抗温度磁
器の常温比抵抗に比例して直径あるいは幅を変化さけた
ηいに一定間隔を隔てた島状、A’i>るいは帯状のオ
ーミックニ]ンタク1〜層を形成りる]二押、 該j1抵抗消度磁器の土面の全てのオーミック」ンタク
1一層および下面の全てのオーミックニ]ンタク1へ層
をそれぞれ覆う金属電極を形成覆る工程どよりイ蒙るこ
とを特徴どする常温抵抗値の制御された正抵抗温度磁器
ヒータの製造方法。 (2〉正抵抗温度磁器ヒータ面の全面積3cm2にス・
J?lる厚さTCIllの比S/Tが40以」−である
特許請求の範囲第1項記載の製造方法。 (3〉島状のオーミックニ1ンタクト層の直径1)cm
、=  1 − 幅Wcm、4fl隣りあうA−ミツクーJンタク1〜層
間の距ml l−cmにil 7Jる厚さI’cmの比
D/T、W/T。 L−/ T /J<ぞれぞねOlり、0.h、0.3以
」:である特工′16^求の範囲第1項記載の製造方法
(1) The process of making plate-shaped positive resistance temperature porcelain with a constant thickness. Form an island-shaped, or band-shaped ohmic layer 1 or 2 at regular intervals, and all the ohmic layer on the soil surface of the resistor-quenching porcelain. A method for manufacturing a positive resistance temperature porcelain heater with a controlled resistance at room temperature, comprising the steps of forming and covering metal electrodes covering the first layer and all the ohmic contacts 1 on the lower surface. (2) The total area of the positive resistance temperature porcelain heater surface is 3 cm2.
J? The manufacturing method according to claim 1, wherein the ratio S/T of the thickness TCIll is 40 or more. (3〉Diameter of island-shaped ohmic contact layer 1) cm
, = 1 - Width Wcm, 4fl Ratio D/T, W/T of thickness I'cm to distance ml l-cm between adjacent A-mitsukuntak 1-layers. L-/T/J<Each of you, 0. h, 0.3 or more'': The manufacturing method according to item 1 of the scope of the request for special engineering '16^.
JP9183682A 1982-05-28 1982-05-28 Method of producing positive temperature coefficient porcelain heater Granted JPS58209085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9183682A JPS58209085A (en) 1982-05-28 1982-05-28 Method of producing positive temperature coefficient porcelain heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9183682A JPS58209085A (en) 1982-05-28 1982-05-28 Method of producing positive temperature coefficient porcelain heater

Publications (2)

Publication Number Publication Date
JPS58209085A true JPS58209085A (en) 1983-12-05
JPH0349192B2 JPH0349192B2 (en) 1991-07-26

Family

ID=14037673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9183682A Granted JPS58209085A (en) 1982-05-28 1982-05-28 Method of producing positive temperature coefficient porcelain heater

Country Status (1)

Country Link
JP (1) JPS58209085A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329365A (en) * 1976-08-30 1978-03-18 Mobil Oil Method and device for producing extruded tubular film
JPS5713116A (en) * 1980-06-27 1982-01-23 Sumitomo Metal Ind Ltd Adding method for barium to molten steel

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329365A (en) * 1976-08-30 1978-03-18 Mobil Oil Method and device for producing extruded tubular film
JPS5713116A (en) * 1980-06-27 1982-01-23 Sumitomo Metal Ind Ltd Adding method for barium to molten steel

Also Published As

Publication number Publication date
JPH0349192B2 (en) 1991-07-26

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