JP2003158196A5 - - Google Patents

Claims (10)

An element isolation oxide film formed on a semiconductor substrate, a resistance element formed on the element isolation oxide film , an interlayer film formed on the resistance element, and opening the interlayer film on the resistance element In a semiconductor device comprising a contact region formed in at least a plurality of locations, and a metal wiring layer formed on the upper surface of the contact region,
A semiconductor device comprising a first oxide film formed so as to cover a part of a direct surface and a direct side surface of the resistance element.   2. The semiconductor device according to claim 1, further comprising a nitride film formed so as to cover a direct surface and a direct side surface of the first oxide film.   3. The semiconductor device according to claim 2, further comprising a second oxide film formed so as to cover a direct surface and a direct side surface of the nitride film.   The semiconductor device according to claim 1, further comprising a conductive film formed so as to cover a part of the upper surface and side surface of the resistance element.   The conductive film is used as an upper electrode, the resistive element is used as a lower electrode, and the first oxide film, the nitride film, and the second oxide film are provided as an interlayer dielectric film between the upper electrode and the lower electrode. The semiconductor device according to claim 4, wherein:   6. The semiconductor device according to claim 1, further comprising a silicide layer formed at a contact portion between the resistance element and the contact region. Forming an element isolation oxide film on a semiconductor substrate; forming a semiconductor material on the element isolation oxide film; forming a resistance element by ion implantation into the semiconductor material; and on the resistance element Forming an interlayer film, forming a contact region in at least a plurality of locations on the resistive element by opening the interlayer film, and forming a metal wiring layer on the upper surface of the contact region In a method for manufacturing a semiconductor device,
Forming a first oxide film so as to cover a part of the direct surface and the direct side surface of the resistance element;
And a step of forming a nitride film so as to further cover the direct surface and the direct side surface of the first oxide film.   8. The method of manufacturing a semiconductor device according to claim 7, further comprising a step of forming a second oxide film so as to cover a direct surface and a direct side surface of the nitride film.   9. The method of manufacturing a semiconductor device according to claim 7, further comprising a step of forming a conductive film so as to cover part of the upper surface and side surfaces of the resistance element.   The semiconductor device according to any one of 7 to 9, further comprising a step of selectively performing a silicide reaction with a refractory metal on a surface of the resistance element at a contact portion between the resistance element and the contact region. Production method.