JPS582077A - 半導体デバイス - Google Patents

半導体デバイス

Info

Publication number
JPS582077A
JPS582077A JP57104077A JP10407782A JPS582077A JP S582077 A JPS582077 A JP S582077A JP 57104077 A JP57104077 A JP 57104077A JP 10407782 A JP10407782 A JP 10407782A JP S582077 A JPS582077 A JP S582077A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
type
indium phosphide
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57104077A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038117B2 (en, 2012
Inventor
ステヘン・ロス・フオレスト
オツク−キ−キム
リチヤ−ド・グラント・スミス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS582077A publication Critical patent/JPS582077A/ja
Publication of JPH038117B2 publication Critical patent/JPH038117B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP57104077A 1981-06-19 1982-06-18 半導体デバイス Granted JPS582077A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/275,346 US4473835A (en) 1981-06-19 1981-06-19 Long wavelength avalanche photodetector
US275346 1981-06-19

Publications (2)

Publication Number Publication Date
JPS582077A true JPS582077A (ja) 1983-01-07
JPH038117B2 JPH038117B2 (en, 2012) 1991-02-05

Family

ID=23051901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104077A Granted JPS582077A (ja) 1981-06-19 1982-06-18 半導体デバイス

Country Status (5)

Country Link
US (1) US4473835A (en, 2012)
JP (1) JPS582077A (en, 2012)
DE (1) DE3222848A1 (en, 2012)
FR (1) FR2508235B1 (en, 2012)
GB (1) GB2100928B (en, 2012)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736878A (en) * 1980-08-18 1982-02-27 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor photodetector
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
JPS5984589A (ja) * 1982-11-08 1984-05-16 Fujitsu Ltd アバランシフオトダイオード
US4631566A (en) * 1983-08-22 1986-12-23 At&T Bell Laboratories Long wavelength avalanche photodetector
CA1228661A (en) * 1984-04-10 1987-10-27 Rca Inc. Avalanche photodetector
CA1228662A (en) * 1984-04-10 1987-10-27 Paul P. Webb Double mesa avalanche photodetector
CA1228663A (en) * 1984-04-10 1987-10-27 Paul P. Webb Photodetector with isolated avalanche region
US4586066A (en) * 1984-04-10 1986-04-29 Rca Inc. Avalanche photodetector
US4597004A (en) * 1985-03-04 1986-06-24 Rca Corporation Photodetector
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
US10032950B2 (en) 2016-02-22 2018-07-24 University Of Virginia Patent Foundation AllnAsSb avalanche photodiode and related method thereof
US12074243B1 (en) 2023-08-24 2024-08-27 Amplification Technologies, Corp. Method for fabricating high-sensitivity photodetectors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643781A (en) * 1979-09-17 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector
US4122476A (en) * 1976-11-22 1978-10-24 International Business Machines Corporation Semiconductor heterostructure
US4144540A (en) * 1978-02-06 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Tunable infrared detector with narrow bandwidth
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
US4383269A (en) * 1980-09-19 1983-05-10 Bell Telephone Laboratories, Incorporated Graded bandgap photodetector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643781A (en) * 1979-09-17 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element

Also Published As

Publication number Publication date
DE3222848C2 (en, 2012) 1988-03-31
GB2100928A (en) 1983-01-06
US4473835A (en) 1984-09-25
GB2100928B (en) 1985-01-03
FR2508235B1 (fr) 1985-12-13
DE3222848A1 (de) 1982-12-30
FR2508235A1 (fr) 1982-12-24
JPH038117B2 (en, 2012) 1991-02-05

Similar Documents

Publication Publication Date Title
US4119994A (en) Heterojunction and process for fabricating same
JP3010389B2 (ja) 集積光ガイド／検出器構造の形成方法
US4656494A (en) Avalanche multiplication photodiode having a buried structure
JPH05160426A (ja) 半導体受光素子
US20030089958A1 (en) Low dark current photodiode
JPS582077A (ja) 半導体デバイス
EP0181391B1 (en) Back-illuminated photodiode with wide bandgap cap layer
US4599632A (en) Photodetector with graded bandgap region
US4346394A (en) Gallium arsenide burrus FET structure for optical detection
US4631566A (en) Long wavelength avalanche photodetector
EP0023723A2 (en) Multistage avalanche photodetector
US4416053A (en) Method of fabricating gallium arsenide burris FET structure for optical detection
JPS63955B2 (en, 2012)
JPS6244709B2 (en, 2012)
US4729004A (en) Semiconductor photo device
JPS61226973A (ja) アバランシエホトダイオ−ド
JPS60110177A (ja) 半導体受光装置の製造方法
EP0150564A2 (en) Electronic device comprising a heterojunction
CA1285642C (en) Vertical photoconductive detector
US4443809A (en) p-i-n Photodiodes
US4918508A (en) Vertical photoconductive detector
JPH0437591B2 (en, 2012)
JP2995751B2 (ja) 半導体受光素子
JPH0215680A (ja) 半導体受光装置
JPH02228080A (ja) 半導体受光素子