JPS58207633A - Defect detection system - Google Patents
Defect detection systemInfo
- Publication number
- JPS58207633A JPS58207633A JP57090704A JP9070482A JPS58207633A JP S58207633 A JPS58207633 A JP S58207633A JP 57090704 A JP57090704 A JP 57090704A JP 9070482 A JP9070482 A JP 9070482A JP S58207633 A JPS58207633 A JP S58207633A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- pattern
- sensors
- logic
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007547 defect Effects 0.000 title claims abstract description 27
- 238000001514 detection method Methods 0.000 title description 3
- 238000007689 inspection Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000007257 malfunction Effects 0.000 abstract description 6
- 238000013139 quantization Methods 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
(1)0発明の技術分野
本発明はパターンの欠陥検査に際し交差する測長センサ
を用いる欠陥検査方式の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an improvement in a defect inspection method using intersecting length measurement sensors when inspecting patterns for defects.
(2)0発明の背景
プリント基板、集積回路には、4電パターンがフォトマ
スクを用いたプロセスを経て形成されているが、その導
電パターンに欠陥が有るか否かということは、それらに
形成される電子回路の生死を決するM要な事柄であり、
その欠陥の検出は顕微説を用いての目視による原始的な
手法に代って、自動横置装置も実用化に向けて開発され
ている。しかしながら、その装置も導電パターンに生じ
ている欠陥周囲にある凹凸の状態によってはその検出機
能を首尾よく発揮し得なくなることがあり、その技術的
改良が望−まれている。(2)0 Background of the Invention On printed circuit boards and integrated circuits, four-conductor patterns are formed through a process using a photomask. It is an important matter that determines the life or death of the electronic circuit that is used.
Instead of the primitive visual inspection method using microscopic theory, an automatic horizontal placement device has been developed for practical use in detecting defects. However, this device may not be able to successfully perform its detection function depending on the state of the irregularities surrounding the defect occurring in the conductive pattern, and there is a need for technical improvements.
(3)、従来技術と問題点
上述のような不都合を米だう゛装置は、4S電バターン
の左右方向にそのパターンの測長な行ってその中心を求
め、その中心から上下方向にノ(ターンの副長を行って
欠陥の判定を行う方式を採って6る。このような直交す
る方向における単なる副長を行う方式では、計容され得
るような小さなパターン突起における欠陥判定に誤動作
を生せしめ、丸まったパターンの角の部分を誤って欠陥
と判定する如き不具合がある。(3) Prior art and problems The device that suffers from the above-mentioned disadvantages measures the length of the 4S electric pattern in the left and right directions to find its center, and then measures the length of the 4S electric pattern in the left and right directions, and then measures the length of the pattern in the vertical direction from the center. A method is adopted in which defects are determined by determining the sub-length of the protrusions6.This method of simply performing the sub-length in the orthogonal direction causes malfunctions in determining defects in small pattern protrusions that can be measured, resulting in rounded and rounded protrusions. There is a problem that a corner portion of a pattern is mistakenly determined to be a defect.
(4)0発明の目的
本)れ明は上述の如き技術的昧題を解決丁べく創案され
たもので、その目的は小さなパターン突起乃至甘子化誤
差で生ずる誤動作を防いで確実な欠陥検出をなしうる欠
陥検査方式を提供することにある。(4) Purpose of the Invention The present invention was created to solve the above-mentioned technical problems, and its purpose is to prevent malfunctions caused by small pattern protrusions or sweetening errors and to ensure reliable defect detection. The purpose of this invention is to provide a defect inspection method that can be used.
(5)9発明の構成
そして、この目的はパターンを光学的に直取ってこれを
二値化し、そのバタ゛−ンの型惑乞保仔して1己憶回路
に記憶した後二値化パターンの非パターン部を表わす信
号がある任意のピット位置において交差する方向のうち
の1つの方向について非パターン部を測長してその中心
を求め、該中心から上記1つの方向と交差する方向に非
パターン部を測長してそのパターンに欠陥があるか否か
を検査する欠陥検査方式において、上記1つの方向と交
差する方向において上記中心から両側に予め決められた
値だけ離れた位置に設けられたガードセ/すの出力が予
め決められた出力関係にあるとき上記検査を禁止するこ
とによって達成される。(5) 9 Structure of the Invention The purpose of this invention is to directly capture a pattern optically, to binarize it, to preserve the pattern of the pattern, to store it in a memory circuit, and then to create a binarized pattern. Measure the length of the non-pattern part in one of the intersecting directions at any pit position where there is a signal representing the non-pattern part of In a defect inspection method that measures the length of a pattern portion and inspects whether or not there is a defect in the pattern, a sensor is provided at a position separated by a predetermined value on both sides from the center in a direction intersecting the one direction above. This is accomplished by inhibiting the above test when the outputs of the guard stations are in a predetermined output relationship.
(6)1発明の実施例
以下、添付図面を参照しながら本発明の詳細な説明する
。(6) First Embodiment The present invention will be described in detail below with reference to the accompanying drawings.
第1図は本発明を実施する装置の構成を示す。FIG. 1 shows the configuration of an apparatus for implementing the present invention.
1はパターン部2及び非パターン部3から成るパターン
を有する被検査試料、例えばプリント基板を示す。4は
被検査試料を走査してそのパターンを読取って二値化回
路5へ供給する撮像1
系、例えばテレビカメフ、−レーザ走査装置である。6
は撮像系4の走査と同期しておって、二値化回路5の二
値化信号を順次に記憶する記憶回路である。7は検査回
路であり、その詳細を第2図に示す。Reference numeral 1 indicates a sample to be inspected, such as a printed circuit board, which has a pattern consisting of a patterned portion 2 and a non-patterned portion 3. Reference numeral 4 denotes an imaging 1 system, such as a television camera, and a laser scanning device, which scans the sample to be inspected, reads the pattern, and supplies the pattern to the binarization circuit 5. 6
is a storage circuit that is synchronized with the scanning of the imaging system 4 and sequentially stores the binarized signals of the binarization circuit 5. 7 is a test circuit, the details of which are shown in FIG.
第2図には、記憶回路6に二値化されて記憶されている
パターンの任意のビット位置P毎にこれを中心にして交
差、例えは直交する方向における所要ビットを記憶回路
6から入力しうる測長センサがSl、82.83.S4
で示されており、上記ビット位置Pから測長センサ83
゜S4の方向に予め決められた値だけ離れた位置におい
て測長センサ81,82と同一方向にガードセンサGl
、G2が設けられている。In FIG. 2, for each arbitrary bit position P of the pattern which is binarized and stored in the memory circuit 6, the required bits are input from the memory circuit 6 in a direction that intersects, for example perpendicularly, with this as the center. The length measurement sensor is Sl, 82.83. S4
From the bit position P, the length measurement sensor 83
゜ Guard sensor Gl is placed in the same direction as the length measurement sensors 81 and 82 at a position separated by a predetermined value in the direction of S4.
, G2 are provided.
611j長センサ81,82はそれら各別にピット位置
Pから同一の二値化信号が連続するその数を減算回路8
の対応する入力へ供給するように構成されている。又、
測長センサ83,84はそれら各別にビット位[Pから
上記センサSl。611j length sensors 81 and 82 each subtract the number of consecutive identical binary signals from the pit position P by a circuit 8.
is configured to supply a corresponding input of the . or,
The length measurement sensors 83 and 84 each measure bit positions [P to the sensor Sl].
S2が同一としたと同じ二値化信号が連続するその数を
加算回路9の対応する入力へ供給するように構成されて
いる。これに加えて、ガードセンサG1.G2はそれら
各別に、上述各センサS1.82.S3.S4において
数えられる二値化信号の反転信号をすべてのピット位置
に有する場合に論理的に上記数えられる信号と同一の信
号を二人カアンド回路10の対応する入力へ供給するよ
うに構成されている。S2 is configured to supply the number of consecutive identical binary signals to the corresponding input of the adder circuit 9. In addition to this, guard sensor G1. G2 separately corresponds to each of the above-mentioned sensors S1.82. S3. It is configured to logically supply the same signal as the signal counted above to the corresponding input of the two-person AND circuit 10 when all pit positions have inverted signals of the binary signals counted in S4. .
減算回路8の出力は比較回路11の一方の入力へ接続さ
れ、比較回路11の他方の入力には予め設定される基準
値が供給されるように構成されている。比較回路11の
出力は二人カアンド回路12の一方の入力へ接続され、
その他方の入力にはアンド回路10の出力が接続されて
いる。そして、アンド回路12の出力は二人力アンド回
路13の一方の入力へ接続されている。The output of the subtraction circuit 8 is connected to one input of a comparison circuit 11, and the other input of the comparison circuit 11 is configured to be supplied with a preset reference value. The output of the comparison circuit 11 is connected to one input of the two-person AND circuit 12,
The output of the AND circuit 10 is connected to the other input. The output of the AND circuit 12 is connected to one input of the two-man AND circuit 13.
加算回路9の出力は上限比較回路14及び下限比較回路
15の一方の入力へ接続され、上限比較回路14の他方
の入力には予め設定される上限基準値が供給され、下限
比較回路15の他方の入力には予め設定される下限基準
値が供給されるように構成場れている。これら両比較回
路14.15の出力はナンド回路16へ接続きれ、ナン
ド回路16の出力はアンド回路13の他方の入力に接続
されている。The output of the adder circuit 9 is connected to one input of the upper limit comparison circuit 14 and the lower limit comparison circuit 15, the other input of the upper limit comparison circuit 14 is supplied with a preset upper limit reference value, and the other input of the lower limit comparison circuit 15 is connected to the other input of the upper limit comparison circuit 14. The configuration is such that a preset lower limit reference value is supplied to the input. The outputs of both comparison circuits 14 and 15 are connected to a NAND circuit 16, and the output of the NAND circuit 16 is connected to the other input of the AND circuit 13.
次に、上記構成の本発明を実施する装置の動作を説明す
る。Next, the operation of the apparatus implementing the present invention having the above configuration will be explained.
被検査試料1に形成されているパターンが撮像系4によ
って読取られ、そのアナログ信号が二値化回路5で二値
化され、撮像系4と同期して記憶動作を生ぜしめられて
いる記憶回路6に記憶される。従って、記憶動作が終了
したときには、被検査試料のパターンのパターン部2は
二値化信号のうちのいずれか一方の論理値、例えば”1
″″に、又その非パターン部3は二値化信号のうちのい
ずれか他方の論理値、例えば“O″に二値化され、且つ
そのパターン型態を保存して記憶している。A storage circuit in which a pattern formed on the sample to be inspected 1 is read by an imaging system 4, the analog signal thereof is binarized by a binarization circuit 5, and a storage operation is generated in synchronization with the imaging system 4. 6 is stored. Therefore, when the storage operation is completed, the pattern portion 2 of the pattern of the sample to be inspected is set to the logical value of one of the binary signals, for example, "1".
``'', and the non-pattern portion 3 is binarized to the other logical value of the binary signals, for example, "O", and the pattern form is preserved and stored.
この記憶動作の終了後に、測長センサS1゜82、S3
.S4の交点Pを記憶回路6の各ピット位置に位置させ
つ\、その位置からセンサSl、82とセンサS3.S
4との交差方向に予め決められた数だけ延びているピッ
ト位置の各論理値を各センサSl、S2.S3,84に
取り込むと共に、ガードセンサG1.G2に4対応する
ピット位置の各論理値を取り込む。After this memorization operation is completed, the length measurement sensors S1°82, S3
.. The intersection point P of S4 is located at each pit position of the memory circuit 6, and from that position, the sensors S1, 82 and the sensor S3. S
Each logical value of a pit position extending a predetermined number of times in a direction intersecting with S1, S2. S3, 84, and guard sensor G1. Each logical value of the pit position corresponding to 4 in G2 is taken in.
このような取り込みが、例えば第3図に示すようなピッ
ト位置Pに来ているとすると、このピット位置における
欠陥検査は次のようになる。Assuming that such intake has come to a pit position P as shown in FIG. 3, for example, the defect inspection at this pit position is as follows.
センサS1及びS2のピット位置P(ia理”0”であ
る。)から左右方向にこれらセンサ81゜S2内に存在
する論理“θ″の数が減算回路8へ入力される、即ち左
右方向における測長が行われ、これら両者の差が減算回
路8がら出方される。From the pit position P (ia logic is "0") of the sensors S1 and S2, the number of logical "θ" existing in these sensors 81°S2 in the left and right direction is input to the subtraction circuit 8, that is, The length is measured, and the difference between the two is output from the subtraction circuit 8.
その差が比較回路11で基準値と比較され、比較回路1
1から出力が得られないつまりビット位fPを中心とし
得ないことを表わす論理″θ″′が比較回路から発生さ
れるならば次のピット位置についてそれが中心として用
いうるが否かの上述の処理が行われる。The difference is compared with the reference value in the comparator circuit 11, and the comparator circuit 1
If a logic "θ"' is generated from the comparator circuit, which indicates that no output can be obtained from 1, that is, the bit position fP cannot be centered, then the above-mentioned question can be used as to whether or not it can be used as the center for the next pit position. Processing takes place.
比較回路11からの出力が論理u1″′であるつまりピ
ット位置Pを中心とじつる(中心が求まる)場合に、ガ
ードセンサG1にも又ガードセンサG2にもそのいずれ
かのピット位置に論理“θ″を含むならば、アンド回路
10の各入力に論理“1″が入り、その出力から論理“
1#が発生し、従って、アンド回路12からも論理“1
″が発生する。When the output from the comparator circuit 11 is the logic u1'', that is, it is centered around the pit position P (the center is found), the guard sensor G1 and the guard sensor G2 have a logic "θ" at either of the pit positions. ”, logic “1” is input to each input of the AND circuit 10, and logic “1” is input from its output.
1# is generated, and therefore the AND circuit 12 also outputs a logic “1”.
” occurs.
一方、センサ83.S4のピット位置Pから上下方向に
これらセンサ83.S4内に存在する論理“0″の数が
加算回路9へ人力される、即ち上下方向における測長が
行われる。力lI算回路9の和出力が比較回路14.1
5に設定される範囲内にないならば、ナンド回路16の
出力に論理゛0″を発生する。従って、アンド回路13
からは欠陥信号は発生しない。逆に、上ハピオロ出力が
比較回路14.15に設定される範囲内にあるならば、
ナンド回路16から欠陥信号が発生される。On the other hand, sensor 83. These sensors 83. The number of logical "0"s present in S4 is manually input to the adder circuit 9, that is, length measurement in the vertical direction is performed. The sum output of the power lI calculating circuit 9 is the comparator circuit 14.1.
If it is not within the range set to 5, a logic "0" is generated at the output of the NAND circuit 16. Therefore, the AND circuit 13
No defect signal is generated. Conversely, if the upper Hapioro output is within the range set in the comparator circuit 14.15, then
A defect signal is generated from the NAND circuit 16.
このようなピット位置Pについての欠陥検査において、
ガードセンサG1又はカードセンサG2のいずれか一方
にそのピット位置のすべてに繊埋°゛1#を含む(例え
ば、第3図例示でtまガードセンサG2のすべてのピッ
ト位置に陶埋11″を含む)ならば、上述の如く、中心
が求められたとしても、アンド回路10の出力は論理゛
0″のため、アンド回路12からは論理″1#が発生さ
れない。つまり、そのピット位置Pについての検査は禁
止される。従って、第3図の図示例の如き小さな突起A
に起因して生ずる欠陥検査の誤動作を防止しうる。この
ような欠陥検査の誤動作防止機能はパターンのシ子化岨
差部分でも発揮され、パターンの欠陥検査の確実性が得
られる。In defect inspection for such a pit position P,
Either the guard sensor G1 or the card sensor G2 includes a wire 11" in all of its pit positions (for example, in the example shown in FIG. ), even if the center is found as described above, the output of the AND circuit 10 is logic "0", so the logic "1#" is not generated from the AND circuit 12. In other words, regarding the pit position P, Therefore, inspection of small protrusions A as shown in FIG. 3 is prohibited.
Malfunctions in defect inspection caused by this can be prevented. Such a function of preventing malfunctions in defect inspection is exhibited even in the slanted slope portion of the pattern, and reliability in defect inspection of the pattern can be obtained.
又、上述のようなセンサは90度だけ位置を変えて設け
られると共に、それに付随する回路も設けて上述と同様
の処理を生じさせる。Also, a sensor such as that described above may be provided at a 90 degree offset, and associated circuitry may be provided to produce the same processing as described above.
上記実施例においては、パターン部を論理“θ″とし、
非パターン部を論理“1″として回路を構成するととも
出来る。In the above embodiment, the pattern section is set to logic "θ",
It is also possible to construct a circuit with the non-pattern portion set to logic "1".
(7)9発明の効釆
以上要するに、本発明によれば、交差する測長センサの
うちの、中心を求める方向に交差する方向にその交点か
ら予め決めらγした値だけ離れた位置にガードセンサを
設け、その出力が予め決められた関係にあるか否かによ
って欠陥検査の禁止を生ぜしめているから、小さなパタ
ーン突起乃至量子化誤差部分で生ずる誤動作を防いで確
実な欠陥検査をなし得る外、このような効果は比較的簡
単な回路の追加で実現しうる等の効果が得られる。(7) 9 Effects of the Invention In short, according to the present invention, a guard is placed at a position a predetermined value γ away from the intersection point in the direction that intersects the direction to find the center of the intersecting length measurement sensors. Since a sensor is installed and defect inspection is prohibited depending on whether or not the output is in a predetermined relationship, it is possible to prevent malfunctions caused by small pattern protrusions or quantization errors and to perform reliable defect inspection. , such effects can be achieved by adding relatively simple circuits.
第1図は本発明を実施する装置の構成を示す図、第2図
は検査回路の詳細図、第3図は被検査試料のパターン一
部の拡大図である。
図において、1は被検査試料、4は撮像系、5は二値化
回路、6は記憶回路、7は検査回路、Sl。
S2.S3.S4は測長センサ、Gl、G2はガードセ
ンサ、8は減算回路、9は加算回路、10゜12.13
はアンド回路、11は比較回路、14は上限比較回路、
15は下限比較回路、16はナンド回路である。
第1図
第2図FIG. 1 is a diagram showing the configuration of an apparatus for carrying out the present invention, FIG. 2 is a detailed diagram of an inspection circuit, and FIG. 3 is an enlarged diagram of a part of a pattern of a sample to be inspected. In the figure, 1 is a sample to be inspected, 4 is an imaging system, 5 is a binarization circuit, 6 is a storage circuit, 7 is an inspection circuit, and Sl. S2. S3. S4 is a length measurement sensor, Gl and G2 are guard sensors, 8 is a subtraction circuit, 9 is an addition circuit, 10°12.13
is an AND circuit, 11 is a comparison circuit, 14 is an upper limit comparison circuit,
15 is a lower limit comparison circuit, and 16 is a NAND circuit. Figure 1 Figure 2
Claims (1)
パターンの型態を保存して記憶回路に記憶した後、二値
化パターンの非パターン部を表わす信号がある任意のビ
ット位置において交差する方向のうちの1つの方向につ
いて非パターン部を測長してその中心を求め、該中心か
ら上記1つの方向と交差する方向に非パターン部を測長
してそのパターンに欠陥があるか否かを検査する欠陥検
査方式において、上記1つの方向と交差する方向におい
て上記中心から両側に予め決められた値だけ離れた位置
に設けられたカードセンサの出力が予め決められた出力
関係にあるとき上記検査を禁止することを特徴とする欠
陥検査方式。 2) 上d己交走は直交でおることを特徴とする特許請
求の範囲第1項記載の欠陥検査方式。[Claims] 1) After optically reading a pattern and binarizing it, saving the type of the pattern and storing it in a storage circuit, there is a signal representing a non-pattern part of the binarized pattern. Measure the length of the non-pattern part in one of the intersecting directions at an arbitrary bit position to find its center, and measure the length of the non-pattern part from the center in the direction intersecting the above one direction to find the pattern. In a defect inspection method for inspecting whether there is a defect in a card, the output of a card sensor provided at a predetermined value on both sides of the center in a direction intersecting the one direction is predetermined. A defect inspection method characterized in that the above inspection is prohibited when there is an output relationship. 2) The defect inspection method according to claim 1, wherein the upper and lower intersections are orthogonal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57090704A JPS58207633A (en) | 1982-05-28 | 1982-05-28 | Defect detection system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57090704A JPS58207633A (en) | 1982-05-28 | 1982-05-28 | Defect detection system |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58207633A true JPS58207633A (en) | 1983-12-03 |
JPH0134323B2 JPH0134323B2 (en) | 1989-07-19 |
Family
ID=14005911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57090704A Granted JPS58207633A (en) | 1982-05-28 | 1982-05-28 | Defect detection system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58207633A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6256442A (en) * | 1985-09-05 | 1987-03-12 | Sumikin Coke Co Ltd | Purification of naphthalene |
-
1982
- 1982-05-28 JP JP57090704A patent/JPS58207633A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6256442A (en) * | 1985-09-05 | 1987-03-12 | Sumikin Coke Co Ltd | Purification of naphthalene |
Also Published As
Publication number | Publication date |
---|---|
JPH0134323B2 (en) | 1989-07-19 |
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