JPS58202578A - シヨツトキ−型光検出素子 - Google Patents

シヨツトキ−型光検出素子

Info

Publication number
JPS58202578A
JPS58202578A JP57087090A JP8709082A JPS58202578A JP S58202578 A JPS58202578 A JP S58202578A JP 57087090 A JP57087090 A JP 57087090A JP 8709082 A JP8709082 A JP 8709082A JP S58202578 A JPS58202578 A JP S58202578A
Authority
JP
Japan
Prior art keywords
film
schottky
silicon
metal
photodetecting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57087090A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473313B2 (enrdf_load_stackoverflow
Inventor
Masahiko Denda
伝田　匡彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57087090A priority Critical patent/JPS58202578A/ja
Publication of JPS58202578A publication Critical patent/JPS58202578A/ja
Publication of JPH0473313B2 publication Critical patent/JPH0473313B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP57087090A 1982-05-20 1982-05-20 シヨツトキ−型光検出素子 Granted JPS58202578A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57087090A JPS58202578A (ja) 1982-05-20 1982-05-20 シヨツトキ−型光検出素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087090A JPS58202578A (ja) 1982-05-20 1982-05-20 シヨツトキ−型光検出素子

Publications (2)

Publication Number Publication Date
JPS58202578A true JPS58202578A (ja) 1983-11-25
JPH0473313B2 JPH0473313B2 (enrdf_load_stackoverflow) 1992-11-20

Family

ID=13905249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087090A Granted JPS58202578A (ja) 1982-05-20 1982-05-20 シヨツトキ−型光検出素子

Country Status (1)

Country Link
JP (1) JPS58202578A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298164A (ja) * 1986-06-18 1987-12-25 Nec Corp 裏面入射型赤外線検出装置
US6798034B2 (en) * 2000-04-20 2004-09-28 Diglrad Corporation Technique for suppression of edge current in semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298164A (ja) * 1986-06-18 1987-12-25 Nec Corp 裏面入射型赤外線検出装置
US6798034B2 (en) * 2000-04-20 2004-09-28 Diglrad Corporation Technique for suppression of edge current in semiconductor devices
US7217953B2 (en) 2000-04-20 2007-05-15 Digirad Corporation Technique for suppression of edge current in semiconductor devices

Also Published As

Publication number Publication date
JPH0473313B2 (enrdf_load_stackoverflow) 1992-11-20

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