JPS58202524A - 結晶成長装置 - Google Patents

結晶成長装置

Info

Publication number
JPS58202524A
JPS58202524A JP57084765A JP8476582A JPS58202524A JP S58202524 A JPS58202524 A JP S58202524A JP 57084765 A JP57084765 A JP 57084765A JP 8476582 A JP8476582 A JP 8476582A JP S58202524 A JPS58202524 A JP S58202524A
Authority
JP
Japan
Prior art keywords
substrate
growth
peripheral
solution
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57084765A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0454371B2 (enrdf_load_stackoverflow
Inventor
Kazuhiro Ito
和弘 伊藤
Hitoshi Nakamura
均 中村
Kazuhiro Kurata
倉田　一宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57084765A priority Critical patent/JPS58202524A/ja
Publication of JPS58202524A publication Critical patent/JPS58202524A/ja
Publication of JPH0454371B2 publication Critical patent/JPH0454371B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP57084765A 1982-05-21 1982-05-21 結晶成長装置 Granted JPS58202524A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57084765A JPS58202524A (ja) 1982-05-21 1982-05-21 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57084765A JPS58202524A (ja) 1982-05-21 1982-05-21 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS58202524A true JPS58202524A (ja) 1983-11-25
JPH0454371B2 JPH0454371B2 (enrdf_load_stackoverflow) 1992-08-31

Family

ID=13839772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084765A Granted JPS58202524A (ja) 1982-05-21 1982-05-21 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS58202524A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57129896A (en) * 1981-01-29 1982-08-12 Toshiba Corp Liquid phase epitaxial growing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57129896A (en) * 1981-01-29 1982-08-12 Toshiba Corp Liquid phase epitaxial growing apparatus

Also Published As

Publication number Publication date
JPH0454371B2 (enrdf_load_stackoverflow) 1992-08-31

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