JPS58201327A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58201327A
JPS58201327A JP57086049A JP8604982A JPS58201327A JP S58201327 A JPS58201327 A JP S58201327A JP 57086049 A JP57086049 A JP 57086049A JP 8604982 A JP8604982 A JP 8604982A JP S58201327 A JPS58201327 A JP S58201327A
Authority
JP
Japan
Prior art keywords
film
semiconductor substrate
type
substrate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57086049A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262458B2 (enExample
Inventor
Masao Yoshizawa
吉沢　正夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57086049A priority Critical patent/JPS58201327A/ja
Publication of JPS58201327A publication Critical patent/JPS58201327A/ja
Publication of JPS6262458B2 publication Critical patent/JPS6262458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Bipolar Transistors (AREA)
JP57086049A 1982-05-19 1982-05-19 半導体装置の製造方法 Granted JPS58201327A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57086049A JPS58201327A (ja) 1982-05-19 1982-05-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57086049A JPS58201327A (ja) 1982-05-19 1982-05-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58201327A true JPS58201327A (ja) 1983-11-24
JPS6262458B2 JPS6262458B2 (enExample) 1987-12-26

Family

ID=13875822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57086049A Granted JPS58201327A (ja) 1982-05-19 1982-05-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58201327A (enExample)

Also Published As

Publication number Publication date
JPS6262458B2 (enExample) 1987-12-26

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