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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP57086049ApriorityCriticalpatent/JPS58201327A/ja
Publication of JPS58201327ApublicationCriticalpatent/JPS58201327A/ja
Publication of JPS6262458B2publicationCriticalpatent/JPS6262458B2/ja
Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types