JPS58185428A - 光電部材 - Google Patents
光電部材Info
- Publication number
- JPS58185428A JPS58185428A JP6647782A JP6647782A JPS58185428A JP S58185428 A JPS58185428 A JP S58185428A JP 6647782 A JP6647782 A JP 6647782A JP 6647782 A JP6647782 A JP 6647782A JP S58185428 A JPS58185428 A JP S58185428A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- film
- silicon layer
- gas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims abstract 11
- 239000002344 surface layer Substances 0.000 claims abstract 2
- 230000001681 protective effect Effects 0.000 claims description 14
- 229910052582 BN Inorganic materials 0.000 claims 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 3
- 239000007789 gas Substances 0.000 abstract description 24
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 2
- 230000036211 photosensitivity Effects 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 description 37
- 108091008695 photoreceptors Proteins 0.000 description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6647782A JPS58185428A (ja) | 1982-04-20 | 1982-04-20 | 光電部材 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6647782A JPS58185428A (ja) | 1982-04-20 | 1982-04-20 | 光電部材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58185428A true JPS58185428A (ja) | 1983-10-29 |
| JPS6235473B2 JPS6235473B2 (enrdf_load_stackoverflow) | 1987-08-01 |
Family
ID=13316893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6647782A Granted JPS58185428A (ja) | 1982-04-20 | 1982-04-20 | 光電部材 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58185428A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61188963A (ja) * | 1985-02-18 | 1986-08-22 | Matsushita Electric Ind Co Ltd | 半導体デバイス |
| JPS646901A (en) * | 1987-06-29 | 1989-01-11 | Nissin Electric Co Ltd | Protective film for optical purpose |
-
1982
- 1982-04-20 JP JP6647782A patent/JPS58185428A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61188963A (ja) * | 1985-02-18 | 1986-08-22 | Matsushita Electric Ind Co Ltd | 半導体デバイス |
| JPS646901A (en) * | 1987-06-29 | 1989-01-11 | Nissin Electric Co Ltd | Protective film for optical purpose |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6235473B2 (enrdf_load_stackoverflow) | 1987-08-01 |
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