JPS58178520A - Inspecting and correcting device of photomask - Google Patents

Inspecting and correcting device of photomask

Info

Publication number
JPS58178520A
JPS58178520A JP57060365A JP6036582A JPS58178520A JP S58178520 A JPS58178520 A JP S58178520A JP 57060365 A JP57060365 A JP 57060365A JP 6036582 A JP6036582 A JP 6036582A JP S58178520 A JPS58178520 A JP S58178520A
Authority
JP
Japan
Prior art keywords
photomask
pattern
correction
correcting
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57060365A
Other languages
Japanese (ja)
Inventor
Osamu Ikenaga
修 池永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57060365A priority Critical patent/JPS58178520A/en
Publication of JPS58178520A publication Critical patent/JPS58178520A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting

Abstract

PURPOSE:To eliminate the causes of errors due to erroneous optical axis to improve throughput in a series of processes by a method wherein the inspecting and correcting processes are constituted so that they may be performed within the same system. CONSTITUTION:An inspecting and correcting photomask 2 is placed on a sample plate 1 for alignment to scan a region divided from the mask 2 by means of the laser beams oscillated by a laser oscillator 3. Then the scanning signals corresponding to any inspected patterns are detected by the detectors 5-7. The scanning signals detected by the detectors 5-7 are respectively transmitted to a judging circuit 8 to be compared with the scanning signals based on the design data transmitted from a design data processing circuit 9 and discriminated if said signals are related to any defective pattern. Any position coordinates discriminated to be a defective pattern are memorized by a correcting coordinate memory circuit 10. Next, when the inspection of the mask 2 is finished, a correcting coordinate is read out of the memory circuit 10 to locate the sample plate 1 on the corrected position focusing the laser beams on the corrected position to correct the defective pattern.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕   ゛ 本発明は半導体集積回路の製作時に用いられるフォトマ
スクに存在する欠陥パターンの検出と欠M パターンの
修正を行うフォトマスクの検査おLび修IEIII4置
に関する。
[Detailed Description of the Invention] [Technical Field to which the Invention Pertains] [The present invention relates to a method for detecting defective patterns existing in photomasks used in the production of semiconductor integrated circuits and for correcting defective patterns. Regarding the revision IEIII 4th place.

〔従来i術とその問題点〕[Conventional i-technique and its problems]

従来上記のフォトマスクに形成されたパターンの検査お
よびフォトマスクに存在する欠陥パターン部を修正′す
る場合には、フォトマスクの検fW&直においてフォト
マスクにパターンを形成する際に用いられる設計データ
に基づいて発生された第1の走査信号と設計データに基
づいて形成された被検査パター7から得られる第2の走
f信号との比較照合を行ない欠陥パターンの存在する位
置を検出することによりフォトマスクの検査全行ないそ
して得られた欠陥位mmmを記録媒体に記録しフォトマ
スクの修正W&置において検査装置から出力された記録
媒体より欠陥位lt1!i+sを入力しそのIIA#位
置へフォトマスクを移動して欠陥パターン部へレーザー
ビームの集束光点を合わせて、レーザービームを集束照
射して欠陥パターン部を除去するというフォトマスクの
検査および修正を行なっていた。
Conventionally, when inspecting the pattern formed on the photomask and correcting the defective pattern portion existing on the photomask, the design data used when forming the pattern on the photomask during the photomask inspection fW & direct. The first scanning signal generated based on the design data is compared with the second scanning f signal obtained from the pattern to be inspected 7 formed based on the design data, and the position where the defective pattern exists is detected. After performing all mask inspections, the obtained defect location mmm is recorded on a recording medium, and during photomask correction W&, the defect location lt1! is recorded from the recording medium output from the inspection device. Inspect and repair the photomask by inputting i+s, moving the photomask to the IIA# position, aligning the focused light point of the laser beam to the defective pattern area, and removing the defective pattern area by focusing the laser beam. I was doing it.

しかしながら、このような工程でフォトマスクの検査お
よび修正を行なう場合、フォトマスクの検査を行なう検
査装置とフォトマスクの欠陥パターンを修正する修正装
置で座標系が異なることにより生じる誤差、双方のシス
テムの間で検査および修正を行なう光源が違うことによ
り生じる誤差および光軸が異なることにより生じる誤差
など槌々の誤差要因が存在すること、フォトマスクの検
査を終了してから修正装置ヘセットする迄にフォトマス
クにゴミやホコリが付着して新たな欠陥が生じる、フォ
トマスクの欠陥を修正した後備−のため再検査が必要で
あるなどの問題があり1以上の結果フォトマスクの検査
から修正までの時間が長くなるなどの問題があ5゜ 〔発明の目的〕 本発明は、上記の問題点を除去するため、レーザービー
ムによりフォトマスクの被検食ノ(ターンを検出して設
計データと比較照合して欠陥)くターンを検出するパタ
ーン検出部と、レーザービームを集束して欠陥パターン
部へ照射して欠陥・くターン部を除去rるパターン修正
部を有するフォトマスクの検査および修正装置を提供す
ることを目的とする。
However, when inspecting and repairing photomasks in such a process, there are errors caused by the difference in coordinate systems between the inspection equipment that inspects the photomask and the repair equipment that corrects the defective patterns of the photomask, and the differences between both systems. There are various error factors, such as errors caused by different light sources used for inspection and correction, and errors caused by different optical axes, and the fact that the photo Problems such as new defects caused by dirt and dust adhering to the mask, and the need for re-inspection as a backup after repairing defects in the photomask.As a result of one or more of the following problems, the time from photomask inspection to repair is shortened. [Objective of the Invention] In order to eliminate the above-mentioned problems, the present invention detects the eclipse (turn) of the photomask using a laser beam and compares it with design data. Provided is a photomask inspection and repair device having a pattern detection section that detects defective patterns and a pattern correction section that focuses a laser beam and irradiates the defective pattern to remove the defect and pattern. The purpose is to

〔発明のgg) このような本発明はフォトマスク製作時に用いられる設
計データに基づいて発生された第1の走査信号と、設計
データに幕づいて形成されたフォトマスクの被検査パタ
ーンをレーザービームで走査して得た第20走11F!
号を比較照合して検出する欠陥位置座標をシステム内部
に保持し、検査終了後に試料台に載っているフォトマス
クの欠陥ノ(ターン部に検量時に用いたレーザービーム
を集束させてレーザービームを集束照射して大部)くタ
ーン部を修正する迄の工程を1つの7ステムに行なうこ
とを特徴とするっ 〔発明の効果〕 本発明によれば、従来のフォトマスクのmjl:&・よ
び修正の工程に比べ、検f装置と修正装置が同一システ
ム内で行なわれるため座標系の誤差がない。検査工程と
修正工程において同じレーザービームを用いるため光軸
のずれがない。検査から修正迄の一連の工程のスルーブ
ツトを向上させることができる効果がある0 〔発明の実施例〕 以下、本発明を図面を参照して詳細に説明する。
[GG of the Invention] The present invention as described above is characterized in that the first scanning signal generated based on the design data used at the time of photomask production and the pattern to be inspected on the photomask formed based on the design data are transmitted with a laser beam. 20th run 11F obtained by scanning with!
The system stores the coordinates of the defect position to be detected by comparing and matching the numbers, and after the inspection is completed, the laser beam used for calibration is focused on the turn part of the photomask placed on the sample stage. [Effects of the Invention] According to the present invention, the process of irradiating and correcting most of the turn portions is performed on one 7 stem. Compared to the above process, there is no error in the coordinate system because the f-detection device and the correction device are performed within the same system. Since the same laser beam is used in the inspection process and repair process, there is no deviation of the optical axis. This has the effect of improving the throughput of a series of processes from inspection to correction. [Embodiments of the Invention] The present invention will be described in detail below with reference to the drawings.

図面は本発明によるフォトマスクの検査および修正装置
の一実施例を示すシステム構成図である。
The drawing is a system configuration diagram showing an embodiment of a photomask inspection and repair apparatus according to the present invention.

試料台1へ検査および修正を行なうフ(トマスク2を載
せて、フォトマスク2のθアライメ/トヲ高精度に行な
い検査領域を登録して試料台をフォトマスク2の検査開
始位置に位置合わせを行ないレーザー発振!113から
発振されたレーザービームをレーザー走査4!114を
駆動してフォトマスク2のX、Yマトリクス状に分割し
たl値域(以Fセルと呼称する)を走査して被検査パタ
ーンに対応した走査信号を第1信号検出部5.51!2
信号慎出部6.$3信号検出部7により得る。ここで第
2信号検出部6と43信号検出部7は得られたノ;ター
ン信号がクロムにより形成さ扛ているノ(ターンである
かフォトマスク2に付着し之ゴミやホコリかを判定する
ための信号検出部であるom記信号横出部で得られ九走
査信号は各々欠陥判定回路8へ送られ、欠陥判定回路8
は前記第1.42、s3走査信号と設計データ発生回路
9より送らj’Lる設計データに基づいて発生される走
査信号とを比較照合して欠陥パターン部かどうかの判定
を行ない、欠陥パターンと判定され九位Ili座標につ
いては修IE座標紀億回i@10へ記憶してlセルにつ
いての検査を#%了したら次のセルへXステージ駆動回
路11、Yステージ駆動回Tl1112をXレーザー干
渉計13、Yレーザー干渉計14で測長してvS科台を
セル毎に移動して検査を行なっていく。そして1枚のフ
ォトマスクについて検査が4Srt、た°ら、修正座標
記憶−l1i810より修正座標を絖み出してその位置
へ試料台を^種度に位置合わせしてレーザー集東制#回
l1l1115によりレーザー集束機構16を駆動させ
てレーザービームをフォトマスク2の修正位置へ集束し
て、レーザービームを集束照射してフォトマスク2の欠
陥パターンを修正することができた。
Place the mask 2 to be inspected and corrected on the sample stage 1, perform θ alignment of the photomask 2 with high accuracy, register the inspection area, and align the sample stage with the inspection start position of the photomask 2. The laser beam oscillated from the laser oscillation! 113 is driven by the laser scanning 4! 114 to scan the l value range (hereinafter referred to as F cell) divided into the X and Y matrix of the photomask 2 to form the pattern to be inspected. The corresponding scanning signal is sent to the first signal detection unit 5.51!2
Signal output section 6. $3 Obtained by the signal detection section 7. Here, the second signal detecting section 6 and the signal detecting section 7 detect whether the turn signal is formed of chromium (turn signal or dirt or dust attached to the photomask 2). The nine scanning signals obtained from the signal output section, which is a signal detection section for the
1.42, s3 scanning signal and the scanning signal generated based on the design data sent from the design data generation circuit 9 are compared to determine whether it is a defective pattern portion, and the defective pattern portion is determined. It is determined that the 9th position Ili coordinate is stored in the correction IE coordinate cycle i@10, and when the inspection for the l cell is #% completed, it is moved to the next cell. The interferometer 13 and the Y laser interferometer 14 measure the length, and the vS table is moved cell by cell for inspection. Then, when one photomask has been inspected for 4Srt, the corrected coordinates are drawn from the corrected coordinate memory l1i810, the sample stage is precisely aligned to that position, and the laser focusing system #1115 is used. The laser focusing mechanism 16 was driven to focus the laser beam on the repair position of the photomask 2, and the defect pattern of the photomask 2 could be repaired by focusing the laser beam.

なお、本発明は上記実m列のみに限定されるものではな
く、その要旨を逸脱しない範囲で檀々変形して実施する
ことができる。
It should be noted that the present invention is not limited to the above-mentioned actual m arrays, and can be implemented with various modifications without departing from the gist thereof.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明のフォトマスクの慎査お・よび修正装置全
体の一構成例を示す図である。 1・・・ttyN台s 2・・・フォトマスク、3・・
レーザー発振装置、4 レーザー走査装置、5・・・第
1111号検出部、 6・・・42信号検出部、7−i
43 @号検出部、 8− 欠陥4’ll 定1!!J
 m 。 9・・設計データ発生回路、10・・・修IE座襟紀億
回路、11・・・Xステージ駆動回路、12・・・Yス
テージ駆動回路、13・・・Xレーザー干渉針、   
14・・・Yレーザー干渉計、15・・・レーザー集束
制−回路、16・・・レーザー県東機構、17・・・計
算機、18・・・磁気テープ装瀘、   ・19・・磁
気ディスク装置、 加・・・キーボード付ディスプレイ又はブリ/ター。
The drawing is a diagram showing an example of the overall configuration of a photomask inspection and repair apparatus according to the present invention. 1...ttyN units 2...photomask, 3...
Laser oscillation device, 4 Laser scanning device, 5... No. 1111 detection section, 6... 42 signal detection section, 7-i
43 @ detection unit, 8- Defect 4'll constant 1! ! J
m. 9...Design data generation circuit, 10...Shu IE Zajiroki circuit, 11...X stage drive circuit, 12...Y stage drive circuit, 13...X laser interference needle,
14... Y laser interferometer, 15... Laser focusing circuit, 16... Laser Kento Organization, 17... Computer, 18... Magnetic tape storage, 19... Magnetic disk device , Add...Display with keyboard or buri/tar.

Claims (1)

【特許請求の範囲】 半導体集積回路の製作に用いられるフォトマスクに形成
されている被検査パターンをレーザービームにより走査
して走査信号を得る信号検出部と。 フォトマスクにパターンを形成する際に用いる設計デー
タから得られるI!TI記走査領域に対応した走査信号
と前記信号検出部より得られ、る走査信号を比較照合し
て欠陥の存在する座標を得る欠陥判定部と、前記で得ら
れた欠陥位置を修正座標として保持する修正座[紀億部
と、修正座標を修正座欅紀憶部からdみ出してその位置
へフォトマスクを載せた試料台を高精度に位1合わせを
してフォトマスクの欠陥パターン部へレーザービームの
集束光点を一蔵させてレーザービームを果束照射し゛C
7オトマスクの欠陥パターン部を修正するパターン修正
部を有することを特徴とするフォトマスクの検査および
修正1&置。
[Scope of Claims] A signal detection unit that scans a pattern to be inspected formed on a photomask used for manufacturing semiconductor integrated circuits with a laser beam to obtain a scanning signal. I! obtained from design data used when forming a pattern on a photomask. a defect determination unit that compares and collates the scanning signal corresponding to the TI scanning area and the scanning signal obtained from the signal detection unit to obtain the coordinates where the defect exists, and holds the defect position obtained in the above as the corrected coordinates. Move the correction seat [marker section] and the correction coordinates beyond the correction seat keyaki memory section, align the sample stage with the photomask to that position with high precision, and move it to the defective pattern section of the photomask. The focused light spot of the laser beam is collected and the laser beam is irradiated.
7 Inspection and correction of a photomask 1 & installation characterized by having a pattern correction section for correcting a defective pattern portion of the photomask.
JP57060365A 1982-04-13 1982-04-13 Inspecting and correcting device of photomask Pending JPS58178520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57060365A JPS58178520A (en) 1982-04-13 1982-04-13 Inspecting and correcting device of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57060365A JPS58178520A (en) 1982-04-13 1982-04-13 Inspecting and correcting device of photomask

Publications (1)

Publication Number Publication Date
JPS58178520A true JPS58178520A (en) 1983-10-19

Family

ID=13140036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57060365A Pending JPS58178520A (en) 1982-04-13 1982-04-13 Inspecting and correcting device of photomask

Country Status (1)

Country Link
JP (1) JPS58178520A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52125269A (en) * 1976-04-14 1977-10-20 Nec Corp Removing device for projecting defects from wafer
JPS54113262A (en) * 1978-02-24 1979-09-04 Hitachi Ltd Mask inspection unit
JPS5568632A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Manufacture of photomask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52125269A (en) * 1976-04-14 1977-10-20 Nec Corp Removing device for projecting defects from wafer
JPS54113262A (en) * 1978-02-24 1979-09-04 Hitachi Ltd Mask inspection unit
JPS5568632A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Manufacture of photomask

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