JPS5817716A - Manufacture for quartz oscillator - Google Patents

Manufacture for quartz oscillator

Info

Publication number
JPS5817716A
JPS5817716A JP11594681A JP11594681A JPS5817716A JP S5817716 A JPS5817716 A JP S5817716A JP 11594681 A JP11594681 A JP 11594681A JP 11594681 A JP11594681 A JP 11594681A JP S5817716 A JPS5817716 A JP S5817716A
Authority
JP
Japan
Prior art keywords
etching
film
metal layer
crystal
unnecessary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11594681A
Other languages
Japanese (ja)
Inventor
Atsushi Tani
谷 厚志
Tsutomu Nishikawa
勉 西川
Shoichi Kishi
正一 岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11594681A priority Critical patent/JPS5817716A/en
Publication of JPS5817716A publication Critical patent/JPS5817716A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

Abstract

PURPOSE:To easily eliminate an unnecessary metallic film, by etching the unnecessary metallic film produced by side etching of a quartz with a liquid dissolving only the unnecessary metallic film, in etching the quartz into a specified size. CONSTITUTION:A metallic layer 2 is formed on both sides of a thin quartz plate 1. In this layer 2, Cr having good adherence to the quartz plate 1 is at first vapor-deposited and then Au is vapor-deposited. A resist film 3 is coated on the film 2. The film 3 is patterned and the layer 2 is selectively etched by using this film 3 as a mask. In this case, etching of Au and Cr is sequentially and individually performed. Next, the quartz plate 1 is etched to the specified shape by using the film 3 and the layer 2. In this case, as the method for removing an unnecessary metallic film produced by side etching of quartz, Cr is etched at first and then Au is etched. Thus, by etching with a liquid dissolving only the unnecessary metal, since a lot of crystals can be dipped in the liquid at the same time, the unnecessary metallic film can easily be removed.

Description

【発明の詳細な説明】 本発明はフォトリソグラフィ技術により水晶振動子管製
造する場合水晶のサイドエツチングにより生じた不要金
属at除去する工程に係り、該不要金属膜を容易に除去
出来る小形水晶振動子の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a process of removing unnecessary metal at which is generated by side etching of crystal when manufacturing a crystal resonator tube by photolithography technology, and provides a small crystal resonator in which the unnecessary metal film can be easily removed. Relating to a manufacturing method.

薄板水晶板より水晶振動子を製造すゐ方法としてフォト
リソグラフィ技術による製造方法がある。
As a method for manufacturing a crystal resonator from a thin crystal plate, there is a manufacturing method using photolithography technology.

この一般的な工St−第1因に示し、第2図に水晶板を
所要の形状にエツチングする場合水晶のサイドエツチン
グにより不要の金属膜を生じた状況を示す。
This general process is shown in Fig. 2, and Fig. 2 shows a situation in which an unnecessary metal film is produced due to side etching of the crystal when etching a crystal plate into a desired shape.

図中1は薄板水晶膜、2は金属層、3はレジスト膜、4
は不要金属膜領竣會示す。
In the figure, 1 is a thin crystal film, 2 is a metal layer, 3 is a resist film, and 4 is a thin crystal film.
indicates unnecessary metal film completion.

工程のli!に従っτm明すると (1)  (2)に示す如く薄板水晶板1の両面に金属
層2を蒸着等の手段により付着さす。
Process li! Accordingly, when τm is determined, metal layers 2 are deposited on both sides of the thin crystal plate 1 by means such as vapor deposition, as shown in (1) and (2).

(1@に示す如く金属JII2の上にレジスト#3′f
t塗布する。
(Resist #3'f on metal JII2 as shown in 1@)
Apply t.

Gl)  (e)K示す如くレジスト1I3t−パター
易ングしこのレジスト膜3をマスクとして金属層2に選
択エツチング管施す。
Gl) (e) As shown in K, a resist 1I3t is patterned and a selective etching tube is applied to the metal layer 2 using the resist film 3 as a mask.

(5)@に示す如くレジスト1II3f:除去する。(5) As shown in @, resist 1II3f: removed.

これKより上記金属層を電極とする小形水晶振動子が完
成する。
From this K, a small crystal resonator using the metal layer as an electrode is completed.

しかしながら上記(4)の工程にシいて、特KDTカッ
ト及びCTカントの水晶をエツチングすると第2FI!
JK示す如く薄板水晶−1と密着しない不要金属膜4が
水晶のサイドエツチングにより生じる。
However, in step (4) above, if you etch the special KDT cut and CT cant crystals, the 2nd FI!
As shown in JK, an unnecessary metal film 4 which does not come into close contact with the thin crystal crystal 1 is generated due to side etching of the crystal.

かかる不要金属膜4は、厚さ0.1(mm)のCT−1
カツトの場合、約0.1 S (mm)&c%k及び水
晶振動子としてのQt低下させる。
Such unnecessary metal film 4 is CT-1 with a thickness of 0.1 (mm).
In the case of a cut, the Qt as a crystal resonator is reduced by approximately 0.1 S (mm) &c%k.

この為従来扛し−ザ光lll郷を用いてこの不要金属膜
を手作業により敢除いていた。仁のため手間がかかる欠
点があった。
For this reason, in the past, this unnecessary metal film was manually removed using a comb. It had the disadvantage that it was time-consuming because it was a jin.

本発明の目的は上記の欠点tなくするために不要金属膜
を容易に取除くことが出来るqの高い小形水晶振動子の
製造方法の提供にある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a small crystal resonator with a high q, in which unnecessary metal films can be easily removed in order to eliminate the above-mentioned drawback t.

、本発明は上記の目的を達成するために、1、所定の厚
み1有する薄い水晶板の両面に金属層を形成する工程、
該金属層表面にレジスト膜を塗布しバターニングする工
程、該レジスト膜管マスクとして該金属層を選択エツチ
ングする工程、該レジスト膜および金属層管マスクとし
て水晶板をエツチングし、所定の水晶振動子形状を得る
工程、その後上記レジスト膜を残存させたit上記金属
膜の不11部領域tエツチングする工程、1有すること
を特徴とする水晶振動子の製造方法。
In order to achieve the above object, the present invention includes the following steps: 1. Forming metal layers on both sides of a thin crystal plate having a predetermined thickness 1;
A step of applying a resist film to the surface of the metal layer and buttering it, a step of selectively etching the metal layer as a tube mask of the resist film, etching a crystal plate as a mask of the resist film and the metal layer tube, and forming a predetermined crystal oscillator. 1. A method for manufacturing a crystal resonator, comprising the steps of: obtaining a shape; and then etching an incomplete region of the metal film with the resist film remaining.

乙 前記金属層が、水晶板表面に形成されたクロム、金
の2層構造から成り、該金属層の第1回目Oエッチング
工程では金、クロムのエツチングを順次別個に行ない、
該金属層の第2回目のエッチングエ和ではクロム、金の
エツチン゛グを順次別個に行なうことt−4111kと
する特許請求の範囲第1項記載の水晶振動子の製造方法
である。
(B) The metal layer consists of a two-layer structure of chromium and gold formed on the surface of the crystal plate, and in the first O etching process of the metal layer, gold and chromium are etched separately in sequence,
The method of manufacturing a crystal resonator according to claim 1, wherein in the second etching process of the metal layer, etching of chromium and gold is carried out separately in sequence (t-4111k).

以下本発明の1実施例につき説明する。実施例として第
1111(A)K示す工@にて金属層2は最初に薄板水
晶板lと密着度のよいクロム會蒸着し次に金管蒸着する
0次に@)K示す工程に−tレジスト膜3とし′″C框
ノボラック樹脂を使用する0次K(2)に示す工sK″
C沸酸會主成分としたエツチング′wiに1水晶を所要
の形状にエツチングする場合水晶のサイドエツチングに
より生じた不要の金属膜4t−龜除く方法とし″Cは、
最初に過塩素酸液によpクロム管エツチングし、次によ
う素とよう化カリウムの混合液により金管エツチングす
る。Cの方゛法即ち不要金属膜のみを溶かす液にてエラ
5−’>iすれば、多数の第211に示す状況の水晶を
同時に上記説明の液の中につけることで可能であるので
、容易に不用金属膜を取除くことが出来る。
One embodiment of the present invention will be described below. As an example, in the process shown in No. 1111(A)K, the metal layer 2 is first vapor-deposited with chromium, which has good adhesion to the thin crystal plate l, and then is vapor-deposited with brass. Membrane 3 is 0-order K (2) using C frame novolac resin.
Etching using fluorocarbon acid as the main component 1 When etching a crystal into the desired shape, a method of removing unnecessary metal film 4t produced by side etching of the crystal is used.
First, the p-chromium tube is etched with a perchloric acid solution, and then the brass tube is etched with a mixed solution of iodine and potassium iodide. By using method C, that is, using a solution that dissolves only the unnecessary metal film, it is possible to do so by simultaneously soaking a large number of crystals in the situation shown in No. 211 in the solution described above. Unnecessary metal film can be easily removed.

以上説明した如く本発明によれば、水晶を所要の大きさ
にエツチングする場合水晶のサイドエツチングにより生
じた不要の金属膜を不要の金属膜のみt溶かす液にてエ
ツチングすることにより容易Kl!除くことが出来、Q
の高い小形の水晶振動子が容易KJl造出来る効果があ
る。
As explained above, according to the present invention, when etching a crystal to a desired size, an unnecessary metal film produced by side etching of the crystal is easily etched with a solution that dissolves only the unnecessary metal film. Can be removed, Q
This has the effect that a small crystal resonator with high KJl can be easily manufactured.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はフォトリソグラフイタ技術により水晶を製造す
る工程説明図、#l!2図は水晶上所要の太き@にエツ
チングする場合水晶のサイドエツチングにより不要の金
属膜倉生じた状況を示す図でめる・ ゛図中1は薄板水晶板、2は金属膜、3はレジスト膜、
4は不要金属膜領域を示す・ 第1図 第2図
Figure 1 is an explanatory diagram of the process of manufacturing crystal using photolithography technology, #l! Figure 2 shows the situation where unnecessary metal film is formed due to side etching of the crystal when etching to the required thickness on the crystal. In the figure, 1 is a thin crystal plate, 2 is a metal film, and 3 is a metal film. resist film,
4 indicates unnecessary metal film area・Figure 1Figure 2

Claims (1)

【特許請求の範囲】 !、所定の厚みを有する薄い水晶板の両面に金属層を形
成する工程、該金属表面にレジスト膜を塗布しパターニ
ングする工程、該レジスト膜をマスクとして皺金属層を
選択エツチングする工程、該レジスト膜および金属層を
マスクとして水晶板tエツチングし、所定の水晶振動子
形状を得る工程、その後上記レジスト膜管残存させたま
ま上記金属層の不1’部領域管エツチングする工程、1
有することを特徴とする水晶振動子の製造方法。 2、前記金属層が、水晶板表面に形成されたり党ム、金
の2層構造から成夛、紋金属層の#!1回目のエツチン
グ工程では金、クロムのエツチングを順次別個に行ない
、該金属層の第2回目。 エツチング工程ではクロム、金のエツチングを順次別個
に行なう仁とを特徴とする特許請求〇範範囲第1項記載
の水晶振動子の製造方法。
[Claims]! , a step of forming a metal layer on both sides of a thin quartz plate having a predetermined thickness, a step of applying and patterning a resist film on the surface of the metal, a step of selectively etching the wrinkled metal layer using the resist film as a mask, and a step of selectively etching the wrinkled metal layer, the resist film. and a step of etching a quartz crystal plate using the metal layer as a mask to obtain a predetermined crystal resonator shape, and a step of etching the uneven region of the metal layer while leaving the resist film tube.
A method for manufacturing a crystal resonator, comprising: 2. The metal layer is formed on the surface of the crystal plate, consists of a two-layer structure of gold, and has a patterned metal layer. In the first etching process, gold and chromium are etched separately in sequence, and in the second etching process, the metal layer is etched separately. The method for manufacturing a crystal resonator according to claim 1, wherein the etching step includes etching chromium and gold separately in sequence.
JP11594681A 1981-07-24 1981-07-24 Manufacture for quartz oscillator Pending JPS5817716A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11594681A JPS5817716A (en) 1981-07-24 1981-07-24 Manufacture for quartz oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11594681A JPS5817716A (en) 1981-07-24 1981-07-24 Manufacture for quartz oscillator

Publications (1)

Publication Number Publication Date
JPS5817716A true JPS5817716A (en) 1983-02-02

Family

ID=14675076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11594681A Pending JPS5817716A (en) 1981-07-24 1981-07-24 Manufacture for quartz oscillator

Country Status (1)

Country Link
JP (1) JPS5817716A (en)

Similar Documents

Publication Publication Date Title
JPS5817716A (en) Manufacture for quartz oscillator
JPS6222463B2 (en)
JP2008187322A (en) Manufacturing method of mesa type piezoelectric vibrating element
JPH022519A (en) Production of liquid crystal display element
JPH02139972A (en) Manufacture of semiconductor device
JPH04130810A (en) Manufacture of at cut crystal oscillating piece
JPH03140476A (en) Method for etching thin metallic film
JPS61267054A (en) Etching method for photomask blank
JPH0766499A (en) Manufacture of semiconductor laser
JPS5978586A (en) Formation of niobium pattern
JPS604221A (en) Manufacture of semiconductor device
JPS61128524A (en) Forming method of fine pattern
JPH08176799A (en) Selective film forming mask and production thereof
JPS5848334A (en) Manufacture of glass base plate used for image pickup-tube mesh manufacture
JPS63245922A (en) Mask for x-ray exposure
JPS60202441A (en) Mask for forming pattern for semiconductor device
JPS5954309A (en) Manufacture of crystal oscillator
JPH03110912A (en) Electrode forming method for crystal resonator
JP2009088753A (en) Method of manufacturing piezoelectric vibrator
JPS63288020A (en) Formation of electrode
JPS6116527A (en) Manufacture of metallic electrode
JPS6114721A (en) Manufacture of mask
JPS6074629A (en) Formation of thin film pattern
JPS5951157B2 (en) Manufacturing method of thin film pattern
JPS61129848A (en) Manufacture of semiconductor device