JPS58176978A - 受光素子の製造方法 - Google Patents
受光素子の製造方法Info
- Publication number
- JPS58176978A JPS58176978A JP57059235A JP5923582A JPS58176978A JP S58176978 A JPS58176978 A JP S58176978A JP 57059235 A JP57059235 A JP 57059235A JP 5923582 A JP5923582 A JP 5923582A JP S58176978 A JPS58176978 A JP S58176978A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- guard ring
- range
- photo sensitive
- dark current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059235A JPS58176978A (ja) | 1982-04-09 | 1982-04-09 | 受光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059235A JPS58176978A (ja) | 1982-04-09 | 1982-04-09 | 受光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176978A true JPS58176978A (ja) | 1983-10-17 |
| JPS6259898B2 JPS6259898B2 (enExample) | 1987-12-14 |
Family
ID=13107513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57059235A Granted JPS58176978A (ja) | 1982-04-09 | 1982-04-09 | 受光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176978A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5093693A (en) * | 1987-10-15 | 1992-03-03 | Bbc Brown Boveri Ag | Pn-junction with guard ring |
| RU221647U1 (ru) * | 2023-07-07 | 2023-11-15 | Федеральное государственное бюджетное учреждение науки "Федеральный исследовательский центр "Казанский научный центр Российской академии наук" | Антиотражающее оптическое покрытие на основе пористого германия |
-
1982
- 1982-04-09 JP JP57059235A patent/JPS58176978A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5093693A (en) * | 1987-10-15 | 1992-03-03 | Bbc Brown Boveri Ag | Pn-junction with guard ring |
| RU221647U1 (ru) * | 2023-07-07 | 2023-11-15 | Федеральное государственное бюджетное учреждение науки "Федеральный исследовательский центр "Казанский научный центр Российской академии наук" | Антиотражающее оптическое покрытие на основе пористого германия |
| RU2817009C1 (ru) * | 2023-07-07 | 2024-04-09 | Федеральное государственное бюджетное учреждение науки "Федеральный исследовательский центр "Казанский научный центр Российской академии наук" | Антиотражающее оптическое покрытие на основе пористого германия |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6259898B2 (enExample) | 1987-12-14 |
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