JPS58175314A - 薄膜圧電振動子 - Google Patents
薄膜圧電振動子Info
- Publication number
- JPS58175314A JPS58175314A JP3854882A JP3854882A JPS58175314A JP S58175314 A JPS58175314 A JP S58175314A JP 3854882 A JP3854882 A JP 3854882A JP 3854882 A JP3854882 A JP 3854882A JP S58175314 A JPS58175314 A JP S58175314A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- piezoelectric
- si3n4
- piezoelectric vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000000206 photolithography Methods 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 11
- 239000000243 solution Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241001504654 Mustela nivalis Species 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3854882A JPS58175314A (ja) | 1982-03-11 | 1982-03-11 | 薄膜圧電振動子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3854882A JPS58175314A (ja) | 1982-03-11 | 1982-03-11 | 薄膜圧電振動子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175314A true JPS58175314A (ja) | 1983-10-14 |
| JPH0365046B2 JPH0365046B2 (enrdf_load_stackoverflow) | 1991-10-09 |
Family
ID=12528339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3854882A Granted JPS58175314A (ja) | 1982-03-11 | 1982-03-11 | 薄膜圧電振動子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175314A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
| EP0976560A3 (en) * | 1998-07-29 | 2000-05-10 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus comprising the same |
| WO2004105237A1 (ja) * | 2003-05-26 | 2004-12-02 | Murata Manufacturing Co., Ltd. | 圧電電子部品、およびその製造方法、通信機 |
| EP1152475A4 (en) * | 1999-11-11 | 2007-02-21 | Mitsubishi Electric Corp | PIEZOELECTRIC THIN FILM ELEMENT |
| EP2066027A4 (en) * | 2006-08-25 | 2010-02-17 | Ube Industries | PIEZOELECTRIC THIN FILM RESONATOR AND METHOD FOR THE PRODUCTION THEREOF |
| US7793395B2 (en) | 2003-10-08 | 2010-09-14 | Samsung Electronics Co., Ltd. | Method for manufacturing a film bulk acoustic resonator |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3514222B2 (ja) * | 1999-11-17 | 2004-03-31 | 株式会社村田製作所 | 圧電共振子、電子部品及び電子機器 |
| JP3514224B2 (ja) * | 1999-11-11 | 2004-03-31 | 株式会社村田製作所 | 圧電共振子、フィルタ及び電子機器 |
| JP4557356B2 (ja) * | 2000-03-29 | 2010-10-06 | 京セラ株式会社 | 圧電共振子 |
| JP3984441B2 (ja) * | 2001-07-26 | 2007-10-03 | 松下電器産業株式会社 | 圧電薄膜振動子及びフィルタ |
-
1982
- 1982-03-11 JP JP3854882A patent/JPS58175314A/ja active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4642508A (en) * | 1984-03-09 | 1987-02-10 | Kabushiki Kaisha Toshiba | Piezoelectric resonating device |
| US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
| EP0976560A3 (en) * | 1998-07-29 | 2000-05-10 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus comprising the same |
| US6502928B1 (en) | 1998-07-29 | 2003-01-07 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus comprising the same |
| EP1152475A4 (en) * | 1999-11-11 | 2007-02-21 | Mitsubishi Electric Corp | PIEZOELECTRIC THIN FILM ELEMENT |
| WO2004105237A1 (ja) * | 2003-05-26 | 2004-12-02 | Murata Manufacturing Co., Ltd. | 圧電電子部品、およびその製造方法、通信機 |
| US7342351B2 (en) | 2003-05-26 | 2008-03-11 | Murata Manufacturing Co., Ltd. | Piezoelectric electronic component, and production method therefor, and communication equipment |
| US8123966B2 (en) | 2003-05-26 | 2012-02-28 | Murata Manufacturing Co., Ltd. | Piezoelectric electronic component, process for producing the same, and communication apparatus |
| US7793395B2 (en) | 2003-10-08 | 2010-09-14 | Samsung Electronics Co., Ltd. | Method for manufacturing a film bulk acoustic resonator |
| EP2066027A4 (en) * | 2006-08-25 | 2010-02-17 | Ube Industries | PIEZOELECTRIC THIN FILM RESONATOR AND METHOD FOR THE PRODUCTION THEREOF |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0365046B2 (enrdf_load_stackoverflow) | 1991-10-09 |