JPS58175148A - Optical pickup device - Google Patents
Optical pickup deviceInfo
- Publication number
- JPS58175148A JPS58175148A JP57055429A JP5542982A JPS58175148A JP S58175148 A JPS58175148 A JP S58175148A JP 57055429 A JP57055429 A JP 57055429A JP 5542982 A JP5542982 A JP 5542982A JP S58175148 A JPS58175148 A JP S58175148A
- Authority
- JP
- Japan
- Prior art keywords
- light
- optical
- laser
- semiconductor laser
- pickup device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体レーザな用いた元ピックアップ装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pickup device using a semiconductor laser.
光ディスク等の信号栴生に用いる光ピックアップに於い
ては、牛導体し−ザ尋から射出されたレーザ光を光学レ
ンズ等でディスク信号面に微少スポツ)K絞り込み、デ
づスフ信号により変調された反射光を光検出器で電気信
号に変換し情報音再生する。In optical pickups used for signal generation of optical discs, etc., the laser beam emitted from the conductor is narrowed down to a minute spot (K) on the disc signal surface using an optical lens, etc., and then modulated by the DZF signal. A photodetector converts the reflected light into an electrical signal and reproduces the information sound.
この撫の光ビックアンプの構成を第1図に示す。The configuration of this Nadeno Hikari big amplifier is shown in Figure 1.
半導体レーザ1の光束は、カップリングレンズ2で平行
光束にされ、偏光プリズム5.1/4波長14Y通り対
物レンズ5によりディスク6の信号面に絞り込まれる。The light beam of the semiconductor laser 1 is made into a parallel light beam by a coupling lens 2, and focused onto the signal surface of a disk 6 by an objective lens 5 along a polarizing prism 5 and a 1/4 wavelength 14Y.
反射光は対物レンズ5.1/4波長板4ン通り偏光プリ
ズム5で反射され、光検出器7で電気信号に変換される
。この種の光学系に於ては偏光プリズム5と1/4波長
鈑4を用いるため、原堆的に半導体レーザには反射光は
帰還しないが、部品の精度や組立精度およびディスク材
質の光学的異方性(複屈折)等により微少ではあるが半
導体レーザ1に帰還してしまい、帰還光量V$&Cする
ことは不可能である。この場合、特に屈折率ガイド構造
等の縦モードのシングルモードレーザダイオードはこの
微少な帰還光量のため、縦モードが変化し、光出力が変
化する、信号再生の場合、この光出力変動がノイズとな
゛す、ディスクより良好な信号を検出することか困難と
なっていた。The reflected light passes through an objective lens 5, a 1/4 wavelength plate 4, is reflected by a polarizing prism 5, and is converted into an electrical signal by a photodetector 7. Since this type of optical system uses a polarizing prism 5 and a quarter-wavelength plate 4, the reflected light does not return to the semiconductor laser in principle. Due to anisotropy (birefringence), etc., a small amount of light returns to the semiconductor laser 1, and it is impossible to reduce the amount of feedback light to V$&C. In this case, especially in a single mode laser diode with a longitudinal mode such as a refractive index guide structure, due to this small amount of feedback light, the longitudinal mode changes and the optical output changes.In the case of signal regeneration, this optical output fluctuation is caused by noise. Moreover, it has been difficult to detect a signal better than that from a disk.
本発明の目的は、以上述べた光出力変動ノイズの欠点を
低減した元ピックアンプ装置を提供することKある。SUMMARY OF THE INVENTION An object of the present invention is to provide an original pick amplifier device in which the drawbacks of optical output fluctuation noise described above are reduced.
従来シングルモードレーザでは、帰還光によるノイズを
低減する友め極力半導体レーザに光が帰還しないように
していた(参考文献 日経メカニカル 12/21*1
ν81%)。Conventional single-mode lasers have been designed to reduce noise caused by feedback light by preventing light from returning to the semiconductor laser as much as possible (Reference: Nikkei Mechanical 12/21*1
ν81%).
出願人が第1図の光学系においているいろな半導体レー
ザを用い、この帰還ノイズのレベルと帰還量の関係を詳
しく濁足した結果、ある帰還量の時にノイズが大きくな
るが、ある量以上る事実奮発見した。以下これを説明す
る。The applicant used various semiconductor lasers in the optical system shown in Figure 1, and as a result of investigating the relationship between the level of this feedback noise and the amount of feedback in detail, we found that the noise becomes large at a certain amount of feedback, but above a certain amount. In fact, I discovered it. This will be explained below.
第2図にシングルモードレーザの反射帰還光量とノイズ
レベルの関係を示す。これはc s p型レーザな用い
て、開口数AA=Q、15でカップリングした例である
。ここで、半導体レーザの射出光量の丁べてン光学系が
用いているのではない。これは、半導体レーザの発光パ
ターンカ非郷方の楕円であることと、対物レンズの開口
での光強度分布が一様である力が小さなスポットを形成
できるためである。よって、レーザの発光パターンによ
り異なるが発光光量のうち10〜50チ程度が光学系を
通る場合が普通である。FIG. 2 shows the relationship between the amount of reflected feedback light and the noise level of a single mode laser. This is an example in which a C sp type laser is used and coupled with a numerical aperture of AA=Q and 15. Here, an optical system that controls the amount of light emitted from the semiconductor laser is not used. This is because the light emitting pattern of the semiconductor laser is an elliptical shape, and the light intensity distribution at the aperture of the objective lens is uniform and a small spot can be formed. Therefore, it is common for about 10 to 50 of the amount of emitted light to pass through the optical system, although it varies depending on the laser light emission pattern.
以下帰還量はこの光学系を通る光量′%:1ooチとし
である。Hereinafter, the amount of feedback is defined as the amount of light passing through this optical system, %:1oo.
この第2因かられかるように、約10%以上帰還させる
と急激にノイズが少なくなる事実がわ11:
かった。又2096程度以上レーザに帰還してやれ −
はほぼノイズは低減され支障がないレベルになる。As can be seen from this second factor, the noise decreases rapidly when the return rate exceeds about 10%. Also, please return to the laser at least 2096.
The noise is almost reduced to a level where there is no problem.
これは、ある程度以上帰還されるとシングルモードレー
ザがマルチライクになるなどコピーレンズの低下のため
と考えられる。This is thought to be due to the deterioration of the copy lens, such as when the single mode laser becomes multi-like when it is fed back beyond a certain level.
以上述べた現象を利用した本発明の実施例な第3−1第
4図により説明する。An embodiment of the present invention utilizing the phenomenon described above will be explained with reference to FIGS. 3-1 and 4.
第5図は本発明の一実施例の構I!i、心で、カップリ
ングレンズ2の後の平行光束中に光軸に対して垂直な反
射面ン持つハーフミラ(反射率20チ)15ヲ設けたも
ので、半導体レーザ1への安定した光帰還(光帰還量2
0チ)を行なえる。FIG. 5 shows the structure of an embodiment of the present invention! i. A half mirror (reflectance of 20 cm) 15 with a reflective surface perpendicular to the optical axis is installed in the parallel light beam after the coupling lens 2, and provides stable optical feedback to the semiconductor laser 1. (Light return amount 2
0chi) can be performed.
@4図は本発明の他実施例の構成図で、m党プリズム5
0入射光学部品の追加なしKjtm@にハーフミラ反射
コーティング15′を施したもので、半導体レーザ1へ
の安定した光帰還(光帰還光量20−)が行なえる利点
がある。Figure @4 is a configuration diagram of another embodiment of the present invention, in which the m-party prism 5
A half-mirror reflective coating 15' is applied to Kjtm@ without the addition of zero-incidence optical components, and there is an advantage that stable light feedback to the semiconductor laser 1 (light return amount 20-) can be performed.
以上本実施例に於いては、光帰還による安定なレーザノ
イズの低減馨行なえた。As described above, in this embodiment, stable reduction of laser noise was achieved by optical feedback.
本発明は以上述べLように、半導体レーザの光音一部戻
してやることKより、レーザの縦モードの変化に伴うノ
イズレベルし、ディスクより良質な信号音検出すること
が可能となった。As described above, in the present invention, by returning part of the optical sound of the semiconductor laser, the noise level accompanying the change in the longitudinal mode of the laser is reduced, making it possible to detect a signal sound of higher quality than that of a disk.
さらに偏光プリズムの入射光面及び出射光面に適白な帰
還iをもつハーフミラ−コーチづングン行えば、光学部
品の追加なしに本発明の効果が得られることは明らかで
ある。Furthermore, it is clear that the effects of the present invention can be obtained without adding any optical components by providing a half-mirror coating with appropriate feedback i on the incident light surface and outgoing light surface of the polarizing prism.
第1図は光ピツクアップの基本構成図、第2図はレーザ
の帰還光量とノイズの関係!示す特性図、第6図は本発
明の一実施例i示す構成図、第41は本発明の他の実施
例〉示す構成図である。
1・・・半導体レーザ 2・・・カップリングレンズ6
・・・偏光プリズム 4・・・1/4波長飯5・・・対
物レンズ 6・・・ディスク7・・光検出器 1
5・・レーザ光14・・レーザ戻り党 15・・ノー
ーフミラー15′・・・ハーフミラ−反射コート
代坤人弁理士 薄 1)利 辛
才1図
才 2 図
し−ザ尤n’1Fffr這−! (幻
才 3 図
″?+ffiFigure 1 is a basic configuration diagram of an optical pickup, and Figure 2 is the relationship between the amount of laser feedback light and noise! FIG. 6 is a block diagram showing one embodiment of the present invention, and No. 41 is a block diagram showing another embodiment of the present invention. 1... Semiconductor laser 2... Coupling lens 6
...Polarizing prism 4...1/4 wavelength rice 5...Objective lens 6...Disc 7...Photodetector 1
5...Laser light 14...Laser return party 15...Norf mirror 15'...Half mirror - Reflective coat representative patent attorney thin 1) Li Shinsai 1 figure 2 figure shi - The 尤n'1 Fffr crawl -! (Genzai 3 Diagram"?+ffi
Claims (1)
素子ン介して対物レンズでディスク上に絞り込み、該デ
ィスクからの反射光を前記光偏向素子を介して光検出器
でピックアップする光学的ピックアップ装置において、
前記カップリングレンズと前記対物レンズの間に光軸に
垂直な面よりなる半透明の光帰還材を設け、前記対物レ
ンズより絞り込まnた光量の10%以上に相当てる光量
を常に半導体レーザに帰還すること1%黴とする光学的
ピックアップ装置。 2 前記光帰還材は前記光偏向素子の入射光面側に設け
たハーフミラ−反射コートからなる特許請求の範囲第1
項記載の光学的ピックアップ装置。[Claims] t The light beam of the semiconductor laser is focused onto a disk by an objective lens through a coupling lens and a light deflection element, and the reflected light from the disk is picked up by a photodetector via the light deflection element. In an optical pickup device,
A translucent light return material having a surface perpendicular to the optical axis is provided between the coupling lens and the objective lens, and a light amount corresponding to 10% or more of the light amount narrowed down by the objective lens is always returned to the semiconductor laser. Optical pickup device with 1% mold. 2. The optical return material comprises a half-mirror reflection coat provided on the incident light surface side of the optical deflection element.
The optical pickup device described in Section 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57055429A JPS58175148A (en) | 1982-04-05 | 1982-04-05 | Optical pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57055429A JPS58175148A (en) | 1982-04-05 | 1982-04-05 | Optical pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58175148A true JPS58175148A (en) | 1983-10-14 |
Family
ID=12998334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57055429A Pending JPS58175148A (en) | 1982-04-05 | 1982-04-05 | Optical pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58175148A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61240691A (en) * | 1985-04-17 | 1986-10-25 | Sumitomo Electric Ind Ltd | Light source |
-
1982
- 1982-04-05 JP JP57055429A patent/JPS58175148A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61240691A (en) * | 1985-04-17 | 1986-10-25 | Sumitomo Electric Ind Ltd | Light source |
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