JPS58167500A - ガリウム砒素単結晶の製造方法 - Google Patents
ガリウム砒素単結晶の製造方法Info
- Publication number
- JPS58167500A JPS58167500A JP57050032A JP5003282A JPS58167500A JP S58167500 A JPS58167500 A JP S58167500A JP 57050032 A JP57050032 A JP 57050032A JP 5003282 A JP5003282 A JP 5003282A JP S58167500 A JPS58167500 A JP S58167500A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- melt
- single crystal
- crystal
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 64
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract 3
- 239000000155 melt Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000565 sealant Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011261 inert gas Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000006260 foam Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57050032A JPS58167500A (ja) | 1982-03-30 | 1982-03-30 | ガリウム砒素単結晶の製造方法 |
| US06/455,734 US4496424A (en) | 1982-03-30 | 1983-01-05 | Method for manufacture of III-V compound semiconducting single crystal |
| GB08302441A GB2120954B (en) | 1982-03-30 | 1983-01-28 | Reducing impurity levels in pulled single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57050032A JPS58167500A (ja) | 1982-03-30 | 1982-03-30 | ガリウム砒素単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58167500A true JPS58167500A (ja) | 1983-10-03 |
| JPS6111920B2 JPS6111920B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Family
ID=12847650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57050032A Granted JPS58167500A (ja) | 1982-03-30 | 1982-03-30 | ガリウム砒素単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58167500A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008280225A (ja) * | 2007-05-14 | 2008-11-20 | Sumitomo Metal Ind Ltd | 単結晶の製造方法および製造装置 |
| JP2010155762A (ja) * | 2008-12-29 | 2010-07-15 | Sumco Corp | シリコン単結晶の製造方法 |
| JP2011201757A (ja) * | 2010-03-03 | 2011-10-13 | Covalent Materials Corp | シリコン単結晶の製造方法 |
-
1982
- 1982-03-30 JP JP57050032A patent/JPS58167500A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008280225A (ja) * | 2007-05-14 | 2008-11-20 | Sumitomo Metal Ind Ltd | 単結晶の製造方法および製造装置 |
| JP2010155762A (ja) * | 2008-12-29 | 2010-07-15 | Sumco Corp | シリコン単結晶の製造方法 |
| JP2011201757A (ja) * | 2010-03-03 | 2011-10-13 | Covalent Materials Corp | シリコン単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111920B2 (enrdf_load_stackoverflow) | 1986-04-05 |
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