JPS58164287A - Substrate for integrated circuit - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an integrated circuit device, and more particularly to a semiconductor device having a semiconductor mounting substrate and a heat dissipation substrate made of a steel-carbon fiber composite material.

The substrate on which the semiconductor is mounted has a very small thermal engraving number of 3.5X10-'/l:' for the semiconductor element St.
Mo+W, which has a low coefficient of thermal expansion, has been used. However, there are soaring prices and resource shortages.

Power modules and other hot-forming *1* circuit devices form a circuit network in which circuit elements such as semiconductor elements and resistors are connected with wiring films on an insulating board with voltage resistance characteristics such as Al2.
CLI on the back side of the board! It is connected to a heat sink with excellent thermal conductivity such as Ag or the like. When Cu or Ag, which is a heat dissipation plate, is fixed to an insulating substrate, the insulating plate is likely to warp or break due to the difference in thermal expansion coefficient. Therefore, relatively thick insulating substrates have been used. Therefore, it has the disadvantage of poor thermal resistance.

In order to improve these drawbacks, it is necessary to use a thin plate of insulating material, and to use a material that has a thermal f# coefficient of the heat dissipation plate equivalent to that of the insulating material and has excellent thermal conductivity.

Cu or Ag is a material that satisfies this purpose.
CU-C, which has 14% KCll1.1I11 embedded in Cu, has been developed.There are various materials that have low thermal expansion coefficient and high thermal conductivity. @Weishun composite material is excellent.

The Cu--C embroidery material can be configured to satisfy the thermal expansion characteristics required by the arrangement of the C horizontal lines and the C content. The arrangement of special KCJII fibers greatly influences the coefficient of thermal expansion.

The arrangement of C fibers can be unidirectional, bidirectional, non-directional, radial, etc., but they have the following drawbacks.

One-way arrangement is c4t@heat I in the embroidery radial direction and the direction perpendicular to it
11 Anisotropy occurs because the teachings are different. The two-way arrangement has less effect on suppressing the thermal expansion of the matrix Cu with ciI and fibers, and the thermal expansion becomes larger than that of cm embroidery. In the non-directional arrangement, it is possible to adjust the thermal expansion coefficient by adjusting the fiber length as well as C1# fibers. When the bent portion is heated during bonding or the like, a force exerts on the highly elastic C fibers to return to their original shape, causing cracks in the Cu matrix. A radial arrangement is difficult and is not practical because it requires manufacturing a large number of K for semiconductor devices. These above-mentioned +cu-ca composite materials are cut into a shape that mounts a semiconductor element or a shape that is bonded to an insulating material, and when cut to a size of about 5 to 1011 m, the coefficient of thermal expansion is large. There are nine drawbacks.

C1#! By arranging the fibers in each direction and cutting the Cu-C substrate with a cutting knife, the thermal expansion coefficient changes due to the fact that the thermal expansion of the matrix Cu cannot be suppressed due to the arrangement of the 1#I embroidery. . In other words, there is no reaction between the C fibers and the matrix Cu, and when heated, the effect of the C fibers, which have low thermal expansion, diminishes because Cu has a large thermal tensile coefficient.

Therefore, the matrix is Cu or Ag.

A method for arranging C fibers that suppresses heat 1-carving and a method for producing the same,
In addition, cu-CJti has no change in thermal expansion after cutting.
A board is required.

The object of the present invention is to provide a cu-
The purpose is to provide substrates for semiconductor devices made of cm embroidery material in barrels.

The present invention relates to a semiconductor base plate consisting of a bridge plate on which one or more semiconductor elements are mounted and a heat dissipation plate fixed to an insulating material, and the layer 4i is made of a CU-C fiber composite material. , C fibers are arranged in a cross pattern, and the cross points are 4.
K/ A substrate for a semiconductor device characterized by having at least M".

co-cama composite material ii @ 1 As shown in the figure, sea urchin cf/
II.

The coefficient of thermal expansion ii#Wa is possible from the dissociation quantity VC.

The figure shows the coefficient of thermal expansion in the direction in which the four tassels are arranged. Also, as shown in Figure 2, KC4111! The coefficient of thermal expansion differs depending on the arrangement of the embroidery, but if the fiber arrangement is taken into consideration, a J& board that is isotropic and has a low heat 41 tension can be obtained. In this way, various arrangements of C fibers can be considered, such as low thermal expansion, isotropy, mass production, etc.
- A cross-shaped (for example, plain weave) arrangement is suitable for a substrate for a semiconductor device.

In the case of a substrate in which C fibers are arranged in a cross shape, the coefficient of thermal expansion is constant when the shape has a certain size, but when the shape is made smaller, the thermal l11 tensile coefficient increases.

This is due to the number of cross points in the board. In other words, the C horizontal line is 411 in the radial direction, which is 18X
10""/r rod quality, and its perpendicular thermal expansion coefficient is -2X 10-'/C, and the C fiber is maintained in a manner that wraps the fiber in the radial direction at 5 as shown in Figure I3. By arranging them in a cross pattern, the thermal expansion of the fiber diameter is suppressed, and furthermore, the thermal expansion of the matrix Cu is suppressed by the cross sections of the C fibers, resulting in a CU-C substrate with low thermal expansion. In FIG. 3, l is the CU-C fiber, 2 is the Cu fiber, and 3 is the C fiber.

Example 1 +1 C# embroidery with a diameter of 7 microns is K-plated so that the Cu amount is 70% or less, and 1000 to 3000 fiber bundles are made. 50-50
A cu-C net with the same number of vertical and horizontal cross points was produced by plain weaving with a tension of 0 g. Note that the cross point 5 here refers to the point where the *m bundle 4 and the fiber bundle 4 intersect.

Figure 4 shows the outside of the fabricated net.

The CU-C network was subjected to a reduction treatment in hydrogen at 400C for 30 minutes to remove oxides and dirt.

After the reduction treatment, the nine CU-C nets were once hot-pressed at 1000C, held for 30 minutes, and at a pressure of 250 Kf/lvm to produce a CU-C substrate.

Hot pressed PCU-C board has 1 cross point
ke/cW1", 3 ke/cng", 4 ke/3
The thermal expansion coefficient of the sample was measured using a substrate containing 12 cm/cm and 12 cm/cm. The results are shown in FIG.

As shown in Figure 5, there are few cross points.
It was found that the coefficient of thermal expansion increased and the coefficient of thermal expansion did not change in samples containing cross points of 4 points/m" or more, particularly preferably samples with cross points of 1511" or more.

・Is the number of cross points 3/crs' and 4/1 in the 6th figure? llI” (produced under the above conditions)
Cu-C substrate (50w x 50m) with one side length 3cm.

Cut into squares of 5m, 7++2.10mm, and 13m,
Measure the thermal expansion coefficient and show the nine results. Is the cut shape small in Cross Point 3/3 snow as shown in song @I? First, the coefficient of thermal expansion increases, and the coefficient of thermal expansion also increases.

With 4 cross points/load, even if the cutting shape changed as shown by curve (2), the thermal expansion gk coefficient did not change or die, and a stable cu-'cC substrate was obtained. In addition, samples with no change in thermal expansion coefficient were cut into 21 shapes and the thermal expansion coefficient was measured, but no change was observed.

Example 2 Cu powder was inserted into the void of the circular screen filmed in Example 1, and 100
The material was pressed under a pressure of ~500 kg/cps, and then pre-sintered in hydrogen at 600 to 800 C and hot pressed. Its appearance is shown in Fig. 7. Fabricated+CU-C
Thermal conductivity of the substrate and heat 11-X! Measurement results for 1 test are shown in Table 1.F-Y without Cu powder is included in the r0 table.

Table 1 When observing the surface of the CU-C substrate, what about the CU-C network? !
In the case where 111rtllKcu powder was present, the spread of C fibers was small, and the powder was contained in the voids of the rope.

(Figure 7) Therefore, heat conduction is improved. The reason for this is that the heat vibration of the CLI is transmitted from the front side of the CU-C network to the back side of the CU-C network.

The reason why the thermal tensile coefficient is not so large compared to when no Cu powder is embedded is because the expansion of Cu is suppressed by the cross points of the mesh.

[Brief explanation of drawings]

4I! r. Figure 1 is a graph showing the function of C-pitch estimation and thermal expansion coefficient.
Fig. 2 is a graph showing the relationship between the arrangement direction of the embroidery and the coefficient of thermal expansion, Fig. 3 is a m-plane view showing a one-life embodiment of the present invention, and Fig. 4 is a graph showing the relationship between the arrangement direction of the embroidery and the coefficient of thermal expansion. Fig. 5 is a graph showing the relationship between the number of cross points and the M expansion coefficient of the CU-C fiber mesh substrate, and Fig. 6 is a graph showing the relationship between the length of one side of the substrate and the thermal expansion coefficient. FIG. 7 is a graph showing the relationship between 1! and 1! of the present invention. It is a top view showing an example. 1...CU-C fiber, 2...Cu, 3...C, 4
···fiber? θ, 30 41) 50
(, θ πC 釆襄, Estimation (Volume z9 2nd Senkou Isai [Column 4th figure 7U person Og India Chichi (Male 4 mz) Kigo f-Tsutsumi I) Length electric type) 373

Claims (1)

[Claims] 1. An integrated circuit device comprising a substrate on which one or more semiconductor elements are mounted and a heat dissipation board fixed to an insulating substrate, wherein the heat dissipation board is arranged in a cross shape and has nine CU-C fibers. The composite material is made of a composite material, and the composite material has 4 pieces/equipment in the substrate.
1. A substrate for an integrated circuit, characterized in that it has a glue μ voice/cut as described above. 2. In claim 811, the Cu, -C
The fiber composite material consists of OK in the center and C in the periphery of C.
1. A board for an integrated circuit, characterized by comprising a thread made of cu-ca covered with u and knitted by alternating nine warp threads and trap weft threads. 3. The integrated circuit board according to claim 1, wherein the Cu-C fiber composite material has a ct of 10 to 70% by volume. 4. In claim 1, the CU-C
The fiber composite material is a substrate for an integrated circuit, characterized in that a metal having good thermal conductivity is interposed in the cross gaps of cu-cams arranged in a cross shape. 5. %nt The materials are bundled into one bundle, and each bundle of the fiber composite material is
1. A substrate for an integrated circuit, characterized in that the twisted composite material is knitted in a cross shape by applying a tension of 0 to 500 g, and pressed so as to form a CU-C network. 6. In claim 4, the CIJ-C wax embroidered composite material is pressed under a pressure of 100 to 500 h/cm, and then subjected to reduction treatment in a hydrogen atmosphere at 600 to 800 C. 7. In claim 5 or 6, the CU-C fiber composite material has a temperature of 900 to 105 in a reducing atmosphere.
(4/c11 to 200-300 with IK heating
A substrate for an integrated circuit characterized in that it is hot-pressed with a pressure of 1". An integrated circuit substrate, wherein the substrate is heat-treated at 400C for 0.5 hours at a time.