DE10320186A1 - Heat conducting paste used in the production of power semiconductor modules comprises a base material and a filler - Google Patents
Heat conducting paste used in the production of power semiconductor modules comprises a base material and a filler Download PDFInfo
- Publication number
- DE10320186A1 DE10320186A1 DE2003120186 DE10320186A DE10320186A1 DE 10320186 A1 DE10320186 A1 DE 10320186A1 DE 2003120186 DE2003120186 DE 2003120186 DE 10320186 A DE10320186 A DE 10320186A DE 10320186 A1 DE10320186 A1 DE 10320186A1
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- DE
- Germany
- Prior art keywords
- thermal paste
- filler
- base material
- thermal
- heat conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Die Erfindung beschreibt eine Wärmeleitpaste zum Auftrag auf ein zu kühlendes Bauteil um eine Wärme leitende Verbindung zwischen diesem und einem Kühlbauteil herzustellen.The Invention describes a thermal paste to order on a to be cooled Component around a heat To establish a conductive connection between this and a cooling component.
Beispielhaft werden derartige Wärmeleitpasten auf dem Gebiet der Leistungselektronik eingesetzt um bekannte Leistungshalbleitermodule thermisch leitend mit einem Kühlkörper zu verbinden. Der Wirkungsgrad einer derartigen thermisch leitenden Verbindung wird bestimmt durch die Wärmeleitfähigkeit der Wärmeleitpaste und durch deren Schichtdicke. Bekannt sind Schichtdicken bei den genannten Anwendungen von mehr als 100 μm. Eine Erhöhung der Wärmeleitfähigkeit und/oder eine Reduzierung der Schichtdicke führen zu einer verbesserten Wärmeabfuhr aus dem Leistungshalbleitermodul und damit direkt zu einer Verbesserung der Leistungsfähigkeit.exemplary are such thermal pastes used in the field of power electronics around known power semiconductor modules thermally conductive with a heat sink connect. The efficiency of such a thermally conductive Connection is determined by the thermal conductivity of the thermal paste and by their layer thickness. Layer thicknesses are known for the mentioned applications of more than 100 μm. An increase in thermal conductivity and / or a reduction of the layer thickness for improved heat dissipation from the power semiconductor module and thus directly to an improvement performance.
Eine bekannte und beispielhaft auf dem Gebiet der Leistungselektronik vielfach eingesetzte Wärmeleitpaste ist die Silikonpaste Wacker® P12. Diese weist eine Wärmeleitfähigkeit von ca. 0,8 W·K–1·m–1 sowie einen spezifischen Widerstand von 1013 Ω·m auf. Diese sowie vergleichbare Wärmeleitpasten bilden den Ausgangspunkt dieser Erfindung.A well-known and widely used thermal paste, for example in the field of power electronics, is the silicone paste Wacker ® P12. This has a thermal conductivity of approx. 0.8 W · K –1 · m –1 and a specific resistance of 10 13 Ω · m. These and comparable thermal pastes form the starting point of this invention.
Nachteilig in der Verwendung von Wärmeleitpasten ist, dass diese durch ihre pastöse Konsistenz nach dem Auftrag auf einem Bauelemente empfindlich gegen Verunreinigungen und in noch stärkerem Maße gegen äußere Einflüsse, speziell auf die Schichtdicke oder deren Homogenität, sind.adversely in the use of thermal pastes is that this is due to its pasty Consistency after application to a component sensitive to Impurities and in even stronger Dimensions against external influences, especially on the layer thickness or its homogeneity.
Beispielhaft
offenbart die
Der vorliegenden Erfindung liegt die erste Aufgabe zu Grunde eine Wärmeleitpaste vorzustellen, die eine Wärmeleitfähigkeit von mehr als 2 W·K–1·m–1 aufweist und in Schichtdicken von weniger als 80 μm auftragbar ist, sowie die zweite Aufgabe eine Wärmeleitpaste derart auf ein zu kühlendes Bauteil aufzubringen, dass der Auftrag homogen ist, nur eine minimal nötige Schichtdicke aufweist und diesen Auftrag bis zur Montage des Bauteils auf einem Kühlkörper gegen äußere Einwirkungen geschützt ist.The present invention is based on the first object of presenting a thermal paste which has a thermal conductivity of more than 2 W · K −1 · m −1 and can be applied in layer thicknesses of less than 80 μm, and the second object of a thermal paste in this way to apply the component to be cooled so that the application is homogeneous, has only a minimal layer thickness and this application is protected against external influences until the component is mounted on a heat sink.
Diese Aufgaben werden gelöst durch eine Wärmeleitpaste nach dem Anspruch 1 sowie ein Verfahren nach Anspruch 2, spezielle Ausgestaltungen finden sich in den Unteransprüchen.This Tasks are solved through a thermal paste according to claim 1 and a method according to claim 2, special Refinements can be found in the subclaims.
Der Grundgedanke der Erfindung geht aus von bekannten elektrisch isolierenden Wärmeleitpasten mit einem Wärmewiderstand von ca. 1 W·K–1·m–1. Ein Erhöhung dieses Wärmewiderstandes wird erreicht, indem mindestens einer der Füllstoffe ein hohe Wärmeleitfähigkeit aufweist. Hierfür sind vornehmlich metallische Werkstoffe geeignet. Mit dem Einsatz metallischer Füllstoffe geht einerseits eine Erniedrigung des Wärmewiderstands und andererseits eine Erniedrigung des spezifischen Widerstandes einher. Die Größe der einzelnen Partikel dieses Füllstoffes wird kleiner als 20 μm gewählt, wodurch eine Schichtdicke einer aufgetragenen Schicht von weniger als 80 μm erzielbar ist. Vorteilhafterweise liegt der Füllstoff in Plättchenform vor, womit Schichtdicken bis zu 10 μm erreichbar sind.The basic idea of the invention is based on known electrically insulating heat-conducting pastes with a thermal resistance of approximately 1 W · K −1 · m −1 . This thermal resistance is increased by at least one of the fillers having a high thermal conductivity. Metallic materials are primarily suitable for this. The use of metallic fillers goes hand in hand with a reduction in thermal resistance and a reduction in specific resistance. The size of the individual particles of this filler is chosen to be less than 20 μm, whereby a layer thickness of an applied layer of less than 80 μm can be achieved. The filler is advantageously in platelet form, with which layer thicknesses of up to 10 μm can be achieved.
Zum homogenen Auftrag einer Wärmeleitpaste auf beliebigen im wesentlichen planen Oberflächen mit Schichtdicken zwischen 10 und 80 μm ist das bekannte Siebdruckverfahren geeignet. Um diese Schichten anschließend, beispielhaft während des Transports gegen Verunreinigung und andere äußere Einwirkungen auf die Schichtdicke oder deren Homogenität, zu schützen ist die Wärmeleitpaste mit einem Kunststoffformteil überdeckt. Dieses Kunststoffformteil wird derart auf dem mit Wärmeleitpaste versehenen Bauteil angeordnet, dass nur maximal 8% der Oberfläche der Wärmeleitpaste mit diesem Kunststoffformteil in Kontakt sind. Der übrige Teil der Oberfläche wird durch das Kunststoffformteil überdeckt aber nicht berührt.To the homogeneous application of a thermal paste on any essentially flat surfaces with layer thicknesses between 10 and 80 μm the known screen printing process is suitable. To these layers subsequently, exemplary during of transport against contamination and other external influences on the layer thickness or their homogeneity, to protect is the thermal paste covered with a molded plastic part. This molded plastic part is so on the with thermal paste provided component that only a maximum of 8% of the surface of the Thermal Compounds are in contact with this molded plastic part. The rest of it the surface is covered by the molded plastic part but not touched.
Die
Erfindung wird anhand von Ausführungsbeispielen
in Verbindung mit den
Die
erfindungsgemäße Wärmeleitpaste
(
Beide
Füllstoffe
(
Unter
dem Füllgrad
wird das Volumenverhältnis
zwischen Füllstoff
(
Die
Wärmeleitpaste
(
Eine vorteilhafte Alternative zur genannten Ausgestaltung des Kunststoffformteils ist eine Ausgestaltung als einseitig offene Gitterstrukturfolie. Derartige Gitterstrukturfolien bestehen aus einen Folienschicht von wenigen 10 μm Dicke und einer darauf aufgebrachten beispielhaft wabenartig ausgestalteten Gitterstruktur mit einer Höhe von mehr als 100 μm. Zum Schutz der Wärmeleitpastenschicht wird diese Gitterstrukturfolie mit der offenen Seite auf die Wärmeleitpastenschicht aufgebracht. Da die Gitterstruktur eine Höhe von mehr als 100 μm aufweist, überdeckt die Folienschicht die Wärmeleitpaste ohne sie zu berühren. Einzig die Stege der Gitterstruktur liegen auf maximal 8% der Oberfläche der Wärmeleitpaste auf bzw. durchdringen diese zumindest teilweise.A advantageous alternative to the above-mentioned configuration of the molded plastic part is a configuration as a lattice structure film open on one side. Such lattice structure films consist of a film layer of a few 10 μm Thickness and an applied honeycomb-shaped example Grid structure with a height of more than 100 μm. To protect the thermal paste layer this lattice structure film with the open side on the thermal paste layer applied. Since the lattice structure has a height of more than 100 μm, it is covered the film layer the thermal paste without touching it. Only the bars of the lattice structure lie on a maximum of 8% of the surface of the Thermal Compounds on or penetrate them at least partially.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003120186 DE10320186B4 (en) | 2003-05-07 | 2003-05-07 | Thermal compound and process for its application and protection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2003120186 DE10320186B4 (en) | 2003-05-07 | 2003-05-07 | Thermal compound and process for its application and protection |
Publications (2)
Publication Number | Publication Date |
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DE10320186A1 true DE10320186A1 (en) | 2004-12-02 |
DE10320186B4 DE10320186B4 (en) | 2008-02-14 |
Family
ID=33394185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE2003120186 Expired - Lifetime DE10320186B4 (en) | 2003-05-07 | 2003-05-07 | Thermal compound and process for its application and protection |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10358843B3 (en) * | 2003-12-16 | 2005-03-24 | Semikron Elektronik Gmbh | Packaging container for power semiconducting modules has cover surface with support(s) that narrows as it extends into molded body and into opening in module to prevent contact between module and covering surface |
DE102007003824A1 (en) | 2007-01-25 | 2008-08-07 | Infineon Technologies Ag | Template for applying material layer on uneven surface, has openings including cross-sectional surfaces, where each cross-sectional surface is proportional to length, width and thickness of area of material layer with constant thickness |
DE202009010154U1 (en) | 2009-07-25 | 2009-10-01 | Narva Lichtquellen Gmbh + Co. Kg | Paste for transferring heat |
CN104112723A (en) * | 2013-04-18 | 2014-10-22 | 英飞凌科技股份有限公司 | Semiconductor Module System, Semiconductor Module Arrangement And Method For Mounting A Semiconductor Module On A Heat Sink |
DE102020108097A1 (en) | 2020-03-24 | 2021-09-30 | Semikron Elektronik Gmbh & Co. Kg | Method and stencil for printing paste on a cooling surface of a heat sink |
DE102020108271A1 (en) | 2020-03-25 | 2021-09-30 | Audi Aktiengesellschaft | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
DE102020108537A1 (en) | 2020-03-27 | 2021-09-30 | Audi Aktiengesellschaft | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
DE102016001790B4 (en) | 2015-02-16 | 2022-03-24 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing a semiconductor device |
RU2772487C1 (en) * | 2021-03-12 | 2022-05-23 | Акционерное общество "Научно-Исследовательский Технологический Институт "Авангард" | Conductive heat-conducting paste and method for production thereof |
US11631882B2 (en) | 2019-12-20 | 2023-04-18 | Audi Ag | Method of producing a traction battery of a motor vehicle and corresponding production device |
US11705598B2 (en) | 2019-12-20 | 2023-07-18 | Audi Ag | Method of producing a vehicle traction battery and a corresponding production device |
DE102022118264A1 (en) | 2022-07-21 | 2024-02-01 | Infineon Technologies Ag | Radio frequency device with radio frequency absorbing features |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5591789A (en) * | 1995-06-07 | 1997-01-07 | International Business Machines Corporation | Polyester dispersants for high thermal conductivity paste |
JP3543663B2 (en) * | 1999-03-11 | 2004-07-14 | 信越化学工業株式会社 | Thermal conductive silicone rubber composition and method for producing the same |
-
2003
- 2003-05-07 DE DE2003120186 patent/DE10320186B4/en not_active Expired - Lifetime
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10358843B3 (en) * | 2003-12-16 | 2005-03-24 | Semikron Elektronik Gmbh | Packaging container for power semiconducting modules has cover surface with support(s) that narrows as it extends into molded body and into opening in module to prevent contact between module and covering surface |
EP1544130A1 (en) | 2003-12-16 | 2005-06-22 | Semikron Elektronik GmbH Patentabteilung | Packaging container for power semiconductor modules |
DE102007003824A1 (en) | 2007-01-25 | 2008-08-07 | Infineon Technologies Ag | Template for applying material layer on uneven surface, has openings including cross-sectional surfaces, where each cross-sectional surface is proportional to length, width and thickness of area of material layer with constant thickness |
DE102007003824B4 (en) * | 2007-01-25 | 2010-10-28 | Infineon Technologies Ag | Method for applying a thermal paste |
DE202009010154U1 (en) | 2009-07-25 | 2009-10-01 | Narva Lichtquellen Gmbh + Co. Kg | Paste for transferring heat |
DE102013207043B4 (en) * | 2013-04-18 | 2020-02-27 | Infineon Technologies Ag | Semiconductor module arrangement and method for mounting a semiconductor module on a heat sink |
DE102013207043A1 (en) * | 2013-04-18 | 2014-10-23 | Infineon Technologies Ag | Semiconductor module system, semiconductor module assembly and method for mounting a semiconductor module to a heat sink |
US9330996B2 (en) | 2013-04-18 | 2016-05-03 | Infineon Technologies Ag | Semiconductor module system, semiconductor module arrangement and method for mounting a semiconductor module on a heat sink |
CN104112723A (en) * | 2013-04-18 | 2014-10-22 | 英飞凌科技股份有限公司 | Semiconductor Module System, Semiconductor Module Arrangement And Method For Mounting A Semiconductor Module On A Heat Sink |
DE102016001790B4 (en) | 2015-02-16 | 2022-03-24 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing a semiconductor device |
DE102016015994B3 (en) | 2015-02-16 | 2022-12-01 | Mitsubishi Electric Corporation | semiconductor device |
US11631882B2 (en) | 2019-12-20 | 2023-04-18 | Audi Ag | Method of producing a traction battery of a motor vehicle and corresponding production device |
US11705598B2 (en) | 2019-12-20 | 2023-07-18 | Audi Ag | Method of producing a vehicle traction battery and a corresponding production device |
DE102020108097A1 (en) | 2020-03-24 | 2021-09-30 | Semikron Elektronik Gmbh & Co. Kg | Method and stencil for printing paste on a cooling surface of a heat sink |
DE102020108271A1 (en) | 2020-03-25 | 2021-09-30 | Audi Aktiengesellschaft | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
DE102020108537A1 (en) | 2020-03-27 | 2021-09-30 | Audi Aktiengesellschaft | Method for manufacturing a traction battery of a motor vehicle and a corresponding manufacturing device |
RU2772487C1 (en) * | 2021-03-12 | 2022-05-23 | Акционерное общество "Научно-Исследовательский Технологический Институт "Авангард" | Conductive heat-conducting paste and method for production thereof |
DE102022118264A1 (en) | 2022-07-21 | 2024-02-01 | Infineon Technologies Ag | Radio frequency device with radio frequency absorbing features |
Also Published As
Publication number | Publication date |
---|---|
DE10320186B4 (en) | 2008-02-14 |
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OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: SEMIKRON ELEKTRONIK GMBH & CO. KG, 90431 NUERNBERG, |
|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |