JPH06310825A - Metal-base circuit board and manufacture thereof - Google Patents

Metal-base circuit board and manufacture thereof

Info

Publication number
JPH06310825A
JPH06310825A JP11519293A JP11519293A JPH06310825A JP H06310825 A JPH06310825 A JP H06310825A JP 11519293 A JP11519293 A JP 11519293A JP 11519293 A JP11519293 A JP 11519293A JP H06310825 A JPH06310825 A JP H06310825A
Authority
JP
Japan
Prior art keywords
filler
insulating layer
metal
layer
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11519293A
Other languages
Japanese (ja)
Other versions
JP3155860B2 (en
Inventor
Naoki Yonemura
直己 米村
Makoto Fukuda
誠 福田
Toshiki Saito
俊樹 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP11519293A priority Critical patent/JP3155860B2/en
Publication of JPH06310825A publication Critical patent/JPH06310825A/en
Application granted granted Critical
Publication of JP3155860B2 publication Critical patent/JP3155860B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To provide a metal-base circuit board possessing together a high dielectric strength and a low heat resistance and a method of manufacturing the metal-base circuit board by a method wherein the structure of an insulating layer is formed into a multilayer structure having a layer consisting of a low content of a filling material. CONSTITUTION:When an insulating layer 2, which consists of a filling material 3 and a resin 4, is formed on a metal substrate 1, the structure of the layer 2 is formed into a multilayer structure, which material and a layer consisting of a high filling rate of the filling material. By forming the layer consisting of the low filling rate of the filling material, bubbles, which cause a reduction in a dielectric strength, can be confined in the layer consisting of the high filling rate of the filling material. As a result, a metal-base circuit board having a high dielectric strength and a high heat conductivity (a low heat resistance) can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電気機器、通信機、自動
車等に用いられる電子部品に用いられる金属ベース回路
基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal base circuit board used for electronic parts used in electric equipment, communication devices, automobiles and the like.

【0002】[0002]

【従来の技術】金属ベース回路基板は、ハイパワー分野
に使用されるため、その基板の絶縁層には、高耐電圧性
及び高熱伝導性といった性能が要求される。熱伝導性を
発現させるため、従来の金属ベース回路基板において
は、無機系充填材を高充填した樹脂を金属基板上に塗
布、積層し絶縁層を形成している。
2. Description of the Related Art Since a metal base circuit board is used in the field of high power, the insulating layer of the board is required to have high withstand voltage and high thermal conductivity. In order to develop thermal conductivity, in a conventional metal base circuit board, a resin highly filled with an inorganic filler is applied and laminated on a metal board to form an insulating layer.

【0003】[0003]

【発明が解決しようとする課題】しかし、このような無
機系充填材を高充填した樹脂によって形成された絶縁層
は、充填材の充填率が高くなるにつれて、樹脂と充填材
の界面の欠陥が多くなり、かつボイドの巻き込みが多く
なるため絶縁性が低下し、耐電圧性が低下する。そこ
で、耐電圧性を向上させるためには、熱伝導性を向上さ
せる場合とは逆に充填材の充填率を低くする必要がある
が、当然熱伝導性が低下する。このように、従来の金属
ベース回路基板では高耐電圧性及び高熱伝導性(低い熱
抵抗)を兼備することは難しいという問題があった。
However, in an insulating layer formed of a resin highly filled with such an inorganic filler, defects at the interface between the resin and the filler become higher as the filling rate of the filler becomes higher. In addition, the number of voids is increased and the number of voids is increased, so that the insulating property is lowered and the withstand voltage is lowered. Therefore, in order to improve the withstand voltage, it is necessary to reduce the filling rate of the filler, which is contrary to the case of improving the thermal conductivity, but the thermal conductivity naturally decreases. As described above, the conventional metal-based circuit board has a problem that it is difficult to combine high withstand voltage and high thermal conductivity (low thermal resistance).

【0004】本発明の目的は、高熱伝導性で、かつ高耐
電圧性を有する金属ベース回路基板を供給することにあ
る。
An object of the present invention is to provide a metal base circuit board having high thermal conductivity and high withstand voltage.

【0005】[0005]

【課題を解決するための手段】本発明の特徴は、金属基
板上に積層された絶縁層上に回路が形成された金属ベー
ス回路基板において、絶縁層が充填材と樹脂の混合物よ
り形成されたものであって、該充填材の含有率が異なる
層を二層以上有してなる金属ベース回路基板である。特
に絶縁層中の充填材の含有率が異なる層のうち、充填材
の含有率が最も低い層の、下記(a)に示すF/Lで表
せる値が0.4以下であり、その層の厚さが0.1μm
〜10μmであるときその効果は顕著である。 (a)前記絶縁層に金属基板と平行な直線を引き、該直
線が前記充填材を切る長さ(F)の絶縁層の全長(L)
に対する割合を(F/L)で表す。
A feature of the present invention is that in a metal base circuit board having a circuit formed on an insulating layer laminated on a metal substrate, the insulating layer is formed of a mixture of a filler and a resin. A metal-based circuit board having two or more layers having different filler contents. In particular, among the layers having different filler content in the insulating layer, the layer having the lowest filler content has a value that can be represented by F / L shown in (a) below is 0.4 or less. Thickness is 0.1 μm
The effect is remarkable when the thickness is from 10 μm. (A) A straight line parallel to the metal substrate is drawn on the insulating layer, and the straight line cuts the filling material (F).
Is represented by (F / L).

【0006】そして本発明の金属べース回路基板の製造
方法の特徴は、金属基板上に充填材と樹脂の混合物より
なる絶縁材料を積層し絶縁材料中の充填材を沈降、硬化
させて、充填材の含有率が異なる層を二層以上有する絶
縁層を形成し、さらに該絶縁層上に導電性金属箔からな
る回路を形成することにあり、又もう一つの本発明の製
造方法の特徴は、金属基板上に充填材と樹脂の混合物か
らなる絶縁材料を積層し、さらにその上に該絶縁材料と
は充填材の含有率が異なる一種以上の、充填材と樹脂の
混合物からなる絶縁材料を順次積層して充填材の含有率
が異なる層を二層以上有する絶縁層を形成した後、該絶
縁層上に導電性金属箔からなる回路を形成することにあ
る。
The method of manufacturing the metal-based circuit board of the present invention is characterized in that an insulating material made of a mixture of a filler and a resin is laminated on the metal substrate, and the filler in the insulating material is allowed to settle and harden. Another feature of the present invention is that an insulating layer having two or more layers having different filler contents is formed, and a circuit made of a conductive metal foil is formed on the insulating layer. Is an insulating material made of a mixture of a filler and a resin, on which an insulating material made of a mixture of the filler and a resin is laminated on a metal substrate, and on which a content of the filler is different from that of the insulating material. Is sequentially laminated to form an insulating layer having two or more layers having different filler contents, and then a circuit made of a conductive metal foil is formed on the insulating layer.

【0007】以下、図面により本発明を詳細に説明す
る。本発明の金属ベース回路基板は図1、図2、図3に
示すように、金属基板1上に形成されている絶縁層2は
充填材と樹脂の混合物より形成されており、該充填材の
含有率が異なる二層以上の層3、4、5を有している。
これらの層は三層より多い場合でも本願発明の目的を達
成することができる。充填材の含有率は、通常、体積含
有率で示すのが一般的であるが、測定が困難であるの
で、下記(a)に示す断面の写真観察によって判定でき
る充填材の割合で表す。この含有率の表示法は、体積含
有率そのものではないが、体積含有率のパラメーターと
みなすことができる。
The present invention will be described in detail below with reference to the drawings. In the metal base circuit board of the present invention, as shown in FIGS. 1, 2 and 3, the insulating layer 2 formed on the metal board 1 is made of a mixture of a filler and a resin. It has two or more layers 3, 4, and 5 having different contents.
The object of the present invention can be achieved even when there are more than three layers. The content of the filler is generally expressed as a volume content, but since it is difficult to measure, the content of the filler is represented by the proportion of the filler that can be determined by observing a photograph of a cross section shown in (a) below. This method of displaying the content rate is not the volume content itself, but can be regarded as a parameter of the volume content rate.

【0008】これらの各層の境界面は充填材の含有率の
変化が大きい面とし、その決定方法は次の方法による。
たとえば、絶縁層の断面を走査型顕微鏡写真を肉眼で
観察して充填材の含有率の変化が大きい面を境界面とす
る方法、走査型顕微鏡写真による絶縁層の断面に数μ
m間隔で金属基板と平行な直線を引き、その直線が充填
材を切る長さの全長に対する割合の変化が大きい面を決
定する方法等がある。において数μm間隔の平行直線
の巾はできるだけ小さい方がよい。
The boundary surface of each of these layers is a surface on which the change in the content of the filler is large, and the determination method is as follows.
For example, by observing the cross section of the insulating layer with a naked eye on a scanning micrograph, a method in which the surface with a large change in the filler content is used as the boundary surface, and the cross section of the insulating layer by the scanning micrograph is several μ
For example, there is a method of drawing a straight line parallel to the metal substrate at m intervals and determining a surface in which the ratio of the length of the cut line of the filler to the total length changes largely. In, it is preferable that the width of parallel straight lines at intervals of several μm is as small as possible.

【0009】上記の方法によって決定された境界層によ
って形成される層のうち、充填材の含有率が最も低い層
のF/Lで表せる値が0.4を越えると樹脂と充填材と
の界面での欠陥が多くなり、気泡の巻き込みが発生する
ため、耐電圧性が著しく低下する。また、充填材の含有
率が最も低い層の厚さは耐電圧性向上の面からは厚けれ
ば厚いほどよいが、熱伝導性を考慮すると0.1μm〜
10μmが望ましい。さらに好ましくは、0.5μm〜
5μmである。10μmを越えると熱伝導性が低下し、
金属ベース回路基板の有する高熱伝導性という特徴を十
分発揮することができない。0.1μm以下であると絶
縁層中の気泡に起因する絶縁破壊を防止することができ
ないので好ましくはない。
Among the layers formed by the boundary layer determined by the above method, if the value represented by F / L of the layer having the lowest filler content exceeds 0.4, the interface between the resin and the filler is reached. In this case, the number of defects is increased and air bubbles are entrained, so that the withstand voltage is significantly reduced. Further, the thickness of the layer having the lowest content of the filler is preferably as thick as possible from the viewpoint of improving the withstand voltage, but in consideration of thermal conductivity, it is 0.1 μm or more.
10 μm is desirable. More preferably 0.5 μm
It is 5 μm. If it exceeds 10 μm, the thermal conductivity will decrease,
The characteristic of high thermal conductivity of the metal base circuit board cannot be fully exhibited. When the thickness is 0.1 μm or less, dielectric breakdown due to bubbles in the insulating layer cannot be prevented, which is not preferable.

【0010】充填材の含有率がF/Lで表せる値が0.
4以下の低い層を形成させる方法としては、充填材を沈
降させる方法又は塗布、積層する方法が可能である。充
填材を沈降させる方法の場合、充填材の粒子径、形状、
充填率、樹脂の粘度、温度条件等を適切に選定すること
により、絶縁層中の充填材を沈降させ、絶縁層中に充填
材の含有率の異なる層を二層形成することができる。
The content of the filler is F.L.
As a method of forming a low layer of 4 or less, a method of precipitating the filler or a method of coating and laminating is possible. In the case of the method of allowing the filler to settle, the particle size, shape,
By properly selecting the filling rate, the viscosity of the resin, the temperature conditions, etc., the filler in the insulating layer can be settled, and two layers having different filler content can be formed in the insulating layer.

【0011】例えば、絶縁材料を形成する樹脂としてエ
ポキシ樹脂を使用する場合は、充填材を含有したエポキ
シ樹脂を、樹脂の硬化温度150乃至200℃まで50
℃/分以上の昇温速度で急激に昇温することによってエ
ポキシ樹脂の粘度が低下し、充填材が沈降するので、充
填材の含有率がF/Lで表せる値が0.4以下の低い層
を形成させることができる。
For example, when an epoxy resin is used as the resin for forming the insulating material, the epoxy resin containing the filler is added at a resin curing temperature of 150 to 200 ° C.
Since the viscosity of the epoxy resin is lowered and the filler is settled by rapidly raising the temperature at a temperature rising rate of ℃ / min or more, the content of the filler is as low as 0.4 or less. Layers can be formed.

【0012】又、金属基板上に充填材の充填率の異なる
絶縁材料を二層以上塗布、又は積層する方法の場合は、
例えば金属基板上に先ず充填材の充填率の高い絶縁材料
を塗布し、樹脂の硬化温度150乃至200℃まで50
℃/分より遅い昇温速度でゆっくり昇温し、150乃至
200℃の温度で2乃至5分程度保持して硬化させ、一
層目を形成する。さらにその層の上に一層目とは異なる
充填材含有率の絶縁材料を塗布、積層し一層目と同様の
条件で二層目を硬化させる。三層以上を形成する場合は
さらにこれを繰り返せばよい。このように遅い昇温速度
で昇温したり、低い温度で維持するときは、エポキシ樹
脂の粘度が高いので充填材の沈降が起こらない。
In the case of a method of coating or laminating two or more layers of insulating materials having different filling rates of the filler on the metal substrate,
For example, first, an insulating material having a high filling rate of a filler is applied on a metal substrate, and a resin curing temperature of 150 to 200 ° C. is applied.
The temperature is slowly raised at a heating rate slower than ° C / min, and the temperature is kept at 150 to 200 ° C for about 2 to 5 minutes to be cured to form a first layer. Further, an insulating material having a filler content different from that of the first layer is applied onto the layer, laminated, and the second layer is cured under the same conditions as the first layer. When three or more layers are formed, this may be repeated further. When the temperature is raised at such a slow heating rate or maintained at a low temperature in this way, the settling of the filler does not occur because the viscosity of the epoxy resin is high.

【0013】上記のように形成される絶縁層中の各層を
構成する樹脂と充填材の種類は、同じものでも異なるも
のでもよい。又、充填材の含有率が最も低い場合として
は、充填材を含まない樹脂のみを用いてもよい。
The types of resin and filler which compose each layer in the insulating layer formed as described above may be the same or different. If the content of the filler is the lowest, only the resin not containing the filler may be used.

【0014】充填材の種類としては酸化アルミニウム、
窒化アルミニウム、窒化珪素、シリカ、窒化ホウ素等が
用いられる。また、これらを混合して用いてもかまわな
い。また、充填材の粒子径は充填材を沈降させるために
は平均粒子径が大きいほど好ましいが、通常、0.1乃
至20μm程度のものがよい。さらに好ましくは、1乃
至10μmである。
The type of filler is aluminum oxide,
Aluminum nitride, silicon nitride, silica, boron nitride, etc. are used. Moreover, these may be mixed and used. Further, the particle size of the filler is preferably as large as the average particle size in order to cause the filler to settle, but normally, the particle size is preferably about 0.1 to 20 μm. More preferably, it is 1 to 10 μm.

【0015】また、樹脂の種類としてはエポキシ樹脂、
フェノール樹脂及びポリイミド樹脂が使用できるが、低
粘度の樹脂を用いることが好ましい。また、絶縁層全体
の充填材の含有率は充填材の含有率の低い層の厚み等に
関係してくるが、熱伝導性、絶縁性の両面から考えると
30〜80体積%であることが好ましい。
The type of resin is epoxy resin,
Phenolic resins and polyimide resins can be used, but low viscosity resins are preferably used. Further, the content of the filler in the entire insulating layer is related to the thickness of the layer having a low content of the filler and the like, but it is 30 to 80% by volume in terms of both thermal conductivity and insulation. preferable.

【0016】また、本発明に使用される金属基板1は、
板厚0.3〜5.0mm程度のアルミニウム、銅、ステ
ンレス、鉄等の金属または金属合金板が用いられる。ま
た、導電性金属箔6は銅、アルミニウム、ニッケル、
鉄、錫、銀、チタニウムのいずれか、または、これらの
金属を2種類以上含む合金及びそれぞれの金属を使用し
たクラッド箔が用いられる。この時の箔の製法方法は電
解法でも圧延法で作製したものでもよい。
The metal substrate 1 used in the present invention is
A metal or metal alloy plate of aluminum, copper, stainless steel, iron or the like having a plate thickness of about 0.3 to 5.0 mm is used. The conductive metal foil 6 is made of copper, aluminum, nickel,
Any one of iron, tin, silver, and titanium, or an alloy containing two or more kinds of these metals and a clad foil using each metal are used. The method for producing the foil at this time may be either an electrolytic method or a rolling method.

【0017】[0017]

【作用】絶縁層を充填材の含有率が低い層を含めた多層
構造とすることにより、耐電圧性の低下を防止すること
ができるのは、充填材の含有率が高い層に多く巻き込ま
れた気泡が原因となって生じる絶縁破壊を、充填材の含
有率が小さい層を存在させることによって防止すること
ができるからである。しかも絶縁層中の充填材の充填率
を低下することなく上記構造を形成できるので熱伝導性
を低下させることなく、絶縁性を向上することができ
る。
[Function] By forming the insulating layer into a multi-layer structure including a layer having a low content of the filler, it is possible to prevent a decrease in withstand voltage because the layer having a high content of the filler is often involved. This is because the dielectric breakdown caused by the bubbles can be prevented by the presence of the layer having a small filler content. Moreover, since the above structure can be formed without lowering the filling rate of the filler in the insulating layer, the insulating property can be improved without lowering the thermal conductivity.

【0018】[0018]

【実施例】以下、実施例について具体的に説明する。 [実施例1]1.5mm厚さのアルミニウム基板上に酸
化アルミニウムを充填材(平均粒子径;5μm、破砕
粉)として50体積%含有したエポキシ樹脂により、厚
さ82μmとなるように絶縁層を形成し、60℃/分の
昇温速度で昇温し150℃とし、5分間保持してBステ
ージ状態としたものの上に、厚さ35μmの銅箔を張り
合わせた後、150℃、5時間で絶縁層を硬化させて金
属ベース回路基板を作製した。
EXAMPLES Examples will be specifically described below. Example 1 An insulating layer having a thickness of 82 μm was formed on an aluminum substrate having a thickness of 1.5 mm by using an epoxy resin containing 50% by volume of aluminum oxide as a filler (average particle size; 5 μm, crushed powder). After forming, raising the temperature at a heating rate of 60 ° C./min to 150 ° C. and holding for 5 minutes in a B stage state, a 35 μm-thick copper foil was laminated and then at 150 ° C. for 5 hours. The insulating layer was cured to produce a metal base circuit board.

【0019】この基板を切断し、その断面を走査型電子
顕微鏡(DS−130、明石ビームテクノロジー製)
で、加速電圧20kV、倍率506倍という条件で撮影
した写真で確認された構造のモデル図を図1に示すよう
に絶縁層中には2層が認められた。ここで絶縁層中の層
別の充填材の含有率は、次の方法によって求めた。
This substrate was cut and its cross section was taken by a scanning electron microscope (DS-130, manufactured by Akashi Beam Technology).
Then, as shown in the model diagram of the structure confirmed in the photograph taken under the conditions of the acceleration voltage of 20 kV and the magnification of 506 times, two layers were recognized in the insulating layer. Here, the content of the filler for each layer in the insulating layer was determined by the following method.

【0020】(充填材の含有率F/Lの求め方)走査型
電子顕微鏡で倍率10500倍で撮影した時の各層の写
真における充填材の存在割合を統計処理することにより
求めた。すなわち、図4に示すように基板と平行な直線
を引き、充填材を切る長さf1,f2 ,・・・・fn の合
計Fとしたとき、充填材の含有率=F/Lとした。ここ
で、Fは、F=f1 +f2 +・・・・+fn である。
(Determination of Filler Content F / L) It was determined by statistically processing the abundance ratio of the filler in the photograph of each layer when photographed with a scanning electron microscope at a magnification of 10500 times. That is, when a straight line parallel to the substrate is drawn as shown in FIG. 4 and the total length F 1 , f 2 , ..., F n of the filler is F, the filler content = F / L And Here, F is F = f 1 + f 2 + ... + f n .

【0021】具体的には、10cmの長さの線分に占め
る充填材の長さを算出し、全長に対する割合を統計処理
することにより求めた。
Specifically, the length of the filler occupying a line segment having a length of 10 cm was calculated, and the ratio to the total length was statistically calculated.

【0022】測定の結果、2層目に充填材の含有率の低
い層が認められ、その層の厚みは4μmであり、充填材
の含有率はF/Lで表せる値が0.33であった。又、
この基板を用いて絶縁破壊電圧及び熱抵抗を測定した。
絶縁破壊電圧の測定法はJIS C2110で規定して
いる段階昇圧法(AC電圧)にて測定した。また、熱抵
抗測定については、下記の方法にて測定した。その結果
を表1に示すが、絶縁破壊電圧は5.0kV、熱抵抗は
0.68℃/Wであった。
As a result of the measurement, a layer having a low content of the filler was recognized as the second layer, the thickness of the layer was 4 μm, and the content of the filler was 0.33 in F / L. It was or,
Dielectric breakdown voltage and thermal resistance were measured using this substrate.
The dielectric breakdown voltage was measured by the step-up method (AC voltage) specified in JIS C2110. The thermal resistance was measured by the following method. The results are shown in Table 1. The dielectric breakdown voltage was 5.0 kV and the thermal resistance was 0.68 ° C / W.

【0023】(熱抵抗の測定法)金属ベース絶縁基板の
導電性金属箔をエッチングして10×15mmのパッド
部を形成し、この上にトランジスター(TO220 、株式会
社東芝製)をはんだ付けする。金属板面側を冷却し、ト
ランジスターに通電して、絶縁層を挟んだトランジスタ
ー側と金属板側の温度差と通電量より熱抵抗を測定した
(電気化学工業(株)製デンカHITTプレートのカタ
ログに記載されている方法)。
(Measurement Method of Thermal Resistance) A conductive metal foil of a metal base insulating substrate is etched to form a pad portion of 10 × 15 mm, and a transistor (TO220, manufactured by Toshiba Corporation) is soldered on the pad portion. The metal plate surface side was cooled, the transistor was energized, and the thermal resistance was measured from the temperature difference between the transistor side and the metal plate side with the insulating layer sandwiched between them and the amount of energization (Denka HITT plate catalog manufactured by Denki Kagaku Kogyo Co., Ltd.). Method described in.

【0024】[実施例2]1.5mm厚さのアルミニウ
ム基板上に最初に酸化アルミニウムを充填材(平均粒子
径;5μm、破砕粉)として50体積%含有したエポキ
シ樹脂により、厚さ54μmとなるように絶縁層を形成
し、60℃/分の昇温速度で昇温し200℃で5分間保
持して硬化させた。つぎに、その上に同じ充填材含有率
のエポキシ樹脂を用い厚さ30μmとなるように絶縁層
を形成し、80℃で5分間保持して硬化させBステージ
状態としたものの上に、厚さ35μmの銅箔を張り合わ
せた後、150℃、5時間で絶縁層を硬化させて金属ベ
ース回路基板を作製した。
Example 2 An epoxy resin containing 50% by volume of aluminum oxide as a filler (average particle size: 5 μm, crushed powder) was first formed on an aluminum substrate having a thickness of 1.5 mm to give a thickness of 54 μm. Thus, the insulating layer was formed, heated at a heating rate of 60 ° C./min, and held at 200 ° C. for 5 minutes to be cured. Next, an insulating layer was formed thereon using an epoxy resin having the same filler content so as to have a thickness of 30 μm, and the insulating layer was held at 80 ° C. for 5 minutes to be cured to a B stage state. After adhering 35 μm copper foil, the insulating layer was cured at 150 ° C. for 5 hours to produce a metal base circuit board.

【0025】この基板を切断し、実施例1と同じ条件で
走査型電子顕微鏡観察した。この写真を図5に示す。ま
たこの写真で確認された構造のモデル図を図2に示すよ
うに、絶縁層中に3層が認められた。各層の充填材の含
有率の測定の結果、2層目に充填材の含有率の低い層が
認められ、その層の厚みは6μmであり、充填材の含有
率はF/Lで表せる値が0.36であった。又、この基
板を用いて絶縁破壊電圧及び熱抵抗を測定した。その結
果を表1に示すが、絶縁破壊電圧は5.5kV、熱抵抗
は0.73℃/Wであった。
This substrate was cut and observed under a scanning electron microscope under the same conditions as in Example 1. This photograph is shown in FIG. Further, as shown in the model view of the structure confirmed in this photograph, three layers were recognized in the insulating layer. As a result of measuring the content of the filler in each layer, a layer having a low content of the filler was observed in the second layer, the thickness of the layer was 6 μm, and the content of the filler had a value represented by F / L. It was 0.36. Moreover, the dielectric breakdown voltage and the thermal resistance were measured using this substrate. The results are shown in Table 1. The breakdown voltage was 5.5 kV and the thermal resistance was 0.73 ° C / W.

【0026】[実施例3]1.5mm厚さのアルミニウ
ム基板上に最初に酸化アルミニウムを充填材(平均粒子
径;5μm、破砕粉)として50体積%含有したエポキ
シ樹脂を用い、厚さ32μmとなるように絶縁層を形成
し、40℃/分の昇温速度で昇温し200℃とし、5分
間保持して硬化させた。つぎに、その上に酸化アルミニ
ウムを充填材として35体積%含有したエポキシ樹脂に
より、厚さ9μmとなるように絶縁層を形成し、40℃
/分の昇温速度で昇温し200℃とし、5分間保持して
硬化させた。さらにその上に最初に使用したエポキシ樹
脂を用い厚さ42μmとなるように絶縁層を形成し、8
0℃で5分間保持して硬化させBステージ状態としたも
のの上に、厚さ35μmの銅箔を張り合わせた後、15
0℃、5時間で絶縁層を硬化させて金属ベース回路基板
を作製した。
Example 3 An epoxy resin containing 50% by volume of aluminum oxide as a filler (average particle diameter: 5 μm, crushed powder) was first used on an aluminum substrate having a thickness of 1.5 mm, and a thickness of 32 μm was obtained. An insulating layer was formed so that the temperature was increased to 200 ° C. at a temperature increase rate of 40 ° C./min, and the temperature was held for 5 minutes to cure the insulating layer. Next, an insulating layer was formed thereon with an epoxy resin containing 35% by volume of aluminum oxide as a filler so as to have a thickness of 9 μm, and the temperature was 40 ° C.
The temperature was raised to 200 ° C. at a heating rate of 1 minute / minute and held for 5 minutes for curing. Further, an insulating layer is formed thereon by using the epoxy resin used first so as to have a thickness of 42 μm.
After holding at 0 ° C. for 5 minutes to cure it into a B-stage state, a 35 μm-thick copper foil was attached, and then 15
The insulating layer was cured at 0 ° C. for 5 hours to produce a metal base circuit board.

【0027】この基板を切断し、実施例1と同じ条件で
走査型電子顕微鏡観察した。この写真で確認されたモデ
ル図を図3に示すように、絶縁層中に3層が認められ
た。各層の充填材の含有率の測定の結果、3層目に充填
材の含有率の低い層が認められ、その層の厚みは9μm
であり、充填材の含有率はF/Lで表せる値が0.33
であった。又、この基板を用いて絶縁破壊電圧及び熱抵
抗を測定した。その結果を表1に示すが、絶縁破壊電圧
は6.1kV、熱抵抗は0.85℃/Wであった。
This substrate was cut and observed under a scanning electron microscope under the same conditions as in Example 1. As shown in the model diagram confirmed in this photograph as shown in FIG. 3, three layers were recognized in the insulating layer. As a result of measuring the content of the filler in each layer, a layer having a low content of the filler was recognized as the third layer, and the thickness of the layer was 9 μm.
The content of the filler is 0.33 which can be represented by F / L.
Met. Moreover, the dielectric breakdown voltage and the thermal resistance were measured using this substrate. The results are shown in Table 1. The breakdown voltage was 6.1 kV and the thermal resistance was 0.85 ° C / W.

【0028】[比較例1]比較例1として、1.5mm
厚のアルミニウム板の上に、酸化アルミニウム充填材が
50体積%含有されたエポキシ樹脂を用い、厚さ80μ
mの絶縁層を形成し80℃で5分間保持して硬化させB
ステージ状態としたものの上に、厚さ35μmの銅箔を
張り合わせた後、150℃、5時間で絶縁層を硬化させ
て金属ベース回路基板を作製した。この基板を切断し断
面研磨機で鏡面とした後、実施例1と同様走査型電子顕
微鏡で断面写真を撮影した。その写真より、絶縁層の充
填材の分布は一様で充填材の含有率の異なる層の存在は
認められなかった。また、実施例1と同様な測定方法で
絶縁破壊電圧及び熱抵抗を測定した。その結果を表1に
示したが、絶縁破壊電圧は3.8kV、熱抵抗は0.7
2℃/Wであった。
Comparative Example 1 As Comparative Example 1, 1.5 mm
Epoxy resin containing 50% by volume of aluminum oxide filler is used on a thick aluminum plate and has a thickness of 80 μm.
m insulating layer is formed and held at 80 ° C for 5 minutes to cure B
A copper foil having a thickness of 35 μm was laminated on the stage-shaped one, and the insulating layer was cured at 150 ° C. for 5 hours to produce a metal base circuit board. After this substrate was cut and made into a mirror surface with a cross-section polishing machine, a cross-sectional photograph was taken with a scanning electron microscope as in Example 1. From the photograph, the distribution of the filler in the insulating layer was uniform, and the presence of layers having different filler contents was not recognized. Moreover, the dielectric breakdown voltage and the thermal resistance were measured by the same measurement method as in Example 1. The results are shown in Table 1. The breakdown voltage is 3.8 kV and the thermal resistance is 0.7.
It was 2 ° C / W.

【0029】[比較例2]比較例2として、1.5mm
厚のアルミニウム板上に実施例1と同じ含有率の絶縁材
料を52μmの厚みに塗布し、昇温速度30℃/分、2
00℃、5分間という条件で硬化させた。それ以降の操
作を実施例2と同様な方法で金属ベース基板を作製し
た。実施例1と同様な測定方法で断面観察、絶縁破壊電
圧及び熱抵抗を測定した。充填材の含有率の低い層の厚
みは1μmであり、その含有率はF/Lで表せる値が
0.43であった。また、絶縁破壊電圧は4.2kV、
熱抵抗は0.72℃/Wであった(表1参照)。
Comparative Example 2 As Comparative Example 2, 1.5 mm
An insulating material having the same content as in Example 1 was applied on a thick aluminum plate to a thickness of 52 μm, and the temperature rising rate was 30 ° C./min.
It was cured under the conditions of 00 ° C. for 5 minutes. Subsequent operations were the same as in Example 2 to produce a metal base substrate. The cross-section observation, the dielectric breakdown voltage, and the thermal resistance were measured by the same measurement method as in Example 1. The thickness of the layer having a low filler content was 1 μm, and the content thereof was 0.43 in terms of F / L. Also, the dielectric breakdown voltage is 4.2 kV,
The thermal resistance was 0.72 ° C / W (see Table 1).

【0030】[比較例3]比較例3として、1.5mm
厚のアルミニウム板上に酸化アルミニウム充填材を45
体積%含有したエポキシ樹脂を52μmの厚みに塗布
し、昇温速度70℃/分、200℃、5分間という条件
で硬化させ、それ以降の操作は実施例2と同様な方法で
金属ベース基板を作製した。実施例1と同様な測定方法
で断面観察、絶縁破壊電圧及び熱抵抗を測定した。その
結果、充填材の含有率の低い層の厚みは14μmでその
含有率はF/Lで表せる値が0.25で、絶縁破壊電圧
は6.2kV、熱抵抗は1.09℃/Wであった(表1
参照)。
Comparative Example 3 As Comparative Example 3, 1.5 mm
45 aluminum oxide filler on thick aluminum plate
The epoxy resin containing 52% by volume was applied to a thickness of 52 μm and cured at a temperature rising rate of 70 ° C./minute, 200 ° C. for 5 minutes, and the subsequent operation was performed in the same manner as in Example 2 to prepare a metal base substrate. It was made. The cross-section observation, the dielectric breakdown voltage, and the thermal resistance were measured by the same measurement method as in Example 1. As a result, the layer with a low content of the filler has a thickness of 14 μm, the content has a value that can be represented by F / L of 0.25, the dielectric breakdown voltage is 6.2 kV, and the thermal resistance is 1.09 ° C./W. There was (Table 1
reference).

【0031】[0031]

【表1】 [Table 1]

【0032】[0032]

【発明の効果】以上のとおり本発明によれば、金属ベー
ス回路基板の絶縁層を充填材の含有率が異なる層が二層
以上で構成されていることによって、熱伝導性が高く
(熱抵抗が低く)耐電圧が高い優れた金属ベース回路基
板を得ることができる。
As described above, according to the present invention, since the insulating layer of the metal base circuit board is composed of two or more layers having different filler contents, the thermal conductivity is high (the thermal resistance is high). It is possible to obtain an excellent metal-based circuit board having a high withstand voltage.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一例である実施例1の金属ベース回路
基板の構造を示す図である。
FIG. 1 is a diagram showing a structure of a metal base circuit board according to a first embodiment which is an example of the present invention.

【図2】本発明の一例である実施例2の金属ベース回路
基板の構造を示す図である。
FIG. 2 is a diagram showing a structure of a metal base circuit board according to a second embodiment which is an example of the present invention.

【図3】本発明の一例である実施例3の金属ベース回路
基板の構造を示す図である。
FIG. 3 is a diagram showing a structure of a metal base circuit board of Example 3 which is an example of the present invention.

【図4】充填材の含有率F/Lを具体的に求める図であ
る。
FIG. 4 is a diagram for specifically determining the content F / L of the filler.

【図5】本発明の一例である実施例2の金属ベース回路
基板の構造を示す図2におけるA部分の倍率506倍の
走査型顕微鏡の写真である。
5 is a photograph of a scanning microscope at a magnification of 506 times of the portion A in FIG. 2 showing the structure of the metal base circuit board of Example 2 which is an example of the present invention.

【符号の説明】[Explanation of symbols]

1:金属基板 2:絶縁層 3:充填材の充填率の異なる層 4:充填材の充填率の異なる層 5:充填材の充填率の異なる層 6:導電性金属箔からなる回路 7:樹脂 8:充填材 1: Metal Substrate 2: Insulating Layer 3: Layer with Different Filling Ratio of Filler 4: Layer with Different Filling Ratio of Filler 5: Layer with Different Filling Ratio of Filler 6: Circuit Made of Conductive Metal Foil 7: Resin 8: Filler

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 金属基板上に積層された絶縁層上に回路
が形成された金属ベース回路基板において、該絶縁層が
充填材と樹脂の混合物より形成されたものであって、該
絶縁層は充填材の含有率が異なる層を二層以上有するこ
とを特徴とする金属ベース回路基板。
1. A metal base circuit board having a circuit formed on an insulating layer laminated on a metal substrate, wherein the insulating layer is formed of a mixture of a filler and a resin, and the insulating layer is A metal base circuit board having two or more layers having different filler contents.
【請求項2】 絶縁層中の充填材の含有率が異なる層の
うち、その含有率が最も低い層の、下記(a)に示すF
/Lで表せる値が0.4以下であり、その層の厚さが
0.1μm〜10μmであることを特徴とする請求項1
記載の金属ベース回路基板。 (a)前記絶縁層に金属基板と平行な直線を引き、該直
線が前記充填材を切る長さ(F)の絶縁層の全長(L)
に対する割合を(F/L)で表す。
2. Among the layers having different filler content in the insulating layer, the layer having the lowest content is F shown in (a) below.
The value represented by / L is 0.4 or less, and the thickness of the layer is 0.1 μm to 10 μm.
The metal-based circuit board described. (A) A straight line parallel to the metal substrate is drawn on the insulating layer, and the straight line cuts the filling material (F).
Is represented by (F / L).
【請求項3】 金属基板上に充填材と樹脂の混合物より
なる絶縁材料を積層し充填材を沈降させ硬化させて、充
填材の含有率が異なる層を二層以上有する絶縁層を形成
し、さらに該絶縁層上に導電性金属箔からなる回路を形
成することを特徴とする金属ベース回路基板の製造方
法。
3. An insulating material comprising a mixture of a filler and a resin is laminated on a metal substrate, and the filler is allowed to settle and harden to form an insulating layer having two or more layers having different filler contents. A method of manufacturing a metal base circuit board, further comprising forming a circuit made of a conductive metal foil on the insulating layer.
【請求項4】 金属基板上に充填材と樹脂の混合物から
なる絶縁材料を積層し、さらに、その上に該絶縁材料と
は充填材の含有率が異なる一種以上の、充填材と樹脂の
混合物からなる絶縁材料を順次積層して、充填材の含有
率が異なる層を二層以上有する絶縁層を形成した後、該
絶縁層上に導電性金属箔からなる回路を形成することを
特徴とする金属ベース回路基板の製造方法。
4. An insulating material composed of a mixture of a filler and a resin is laminated on a metal substrate, and further one or more mixtures of the filler and the resin having a different content of the filler from the insulating material. Characterized in that an insulating layer having two or more layers having different filler contents is sequentially formed, and then a circuit made of a conductive metal foil is formed on the insulating layer. Manufacturing method of metal base circuit board.
JP11519293A 1993-04-20 1993-04-20 Metal-based circuit board and manufacturing method Expired - Fee Related JP3155860B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11519293A JP3155860B2 (en) 1993-04-20 1993-04-20 Metal-based circuit board and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11519293A JP3155860B2 (en) 1993-04-20 1993-04-20 Metal-based circuit board and manufacturing method

Publications (2)

Publication Number Publication Date
JPH06310825A true JPH06310825A (en) 1994-11-04
JP3155860B2 JP3155860B2 (en) 2001-04-16

Family

ID=14656635

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3155860B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323255B2 (en) 2004-09-01 2008-01-29 Kabushiki Kaisha Toyota Jidoshokki Method of producing base plate circuit board, base plate for circuit board, and circuit board using the base plate
JP2010050240A (en) * 2008-08-21 2010-03-04 Toyota Industries Corp Method and apparatus for manufacturing heat conductive resin sheet
JP2013243398A (en) * 2013-08-05 2013-12-05 Nhk Spring Co Ltd Laminate for circuit board, metallic base circuit board, and method for manufacturing them
WO2022024932A1 (en) * 2020-07-29 2022-02-03 京セラ株式会社 Wiring board, package for mounting light-emitting element, and light-emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323255B2 (en) 2004-09-01 2008-01-29 Kabushiki Kaisha Toyota Jidoshokki Method of producing base plate circuit board, base plate for circuit board, and circuit board using the base plate
JP2010050240A (en) * 2008-08-21 2010-03-04 Toyota Industries Corp Method and apparatus for manufacturing heat conductive resin sheet
JP2013243398A (en) * 2013-08-05 2013-12-05 Nhk Spring Co Ltd Laminate for circuit board, metallic base circuit board, and method for manufacturing them
WO2022024932A1 (en) * 2020-07-29 2022-02-03 京セラ株式会社 Wiring board, package for mounting light-emitting element, and light-emitting device

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Publication number Publication date
JP3155860B2 (en) 2001-04-16

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