JPS58164285A - Stem for semiconductor laser - Google Patents
Stem for semiconductor laserInfo
- Publication number
- JPS58164285A JPS58164285A JP57047700A JP4770082A JPS58164285A JP S58164285 A JPS58164285 A JP S58164285A JP 57047700 A JP57047700 A JP 57047700A JP 4770082 A JP4770082 A JP 4770082A JP S58164285 A JPS58164285 A JP S58164285A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- stem
- block
- lead wirings
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、半導体レーデ用ステムに関する。[Detailed description of the invention] The present invention relates to a stem for a semiconductor radar.
従来、半導体レーデ素子が装着され九半導体レーザ用ス
テムは、素子の信頼性を高める几めに放熱性に優れてい
ることが要望されている。Conventionally, a stem for a semiconductor laser equipped with a semiconductor laser element is required to have excellent heat dissipation properties in order to improve the reliability of the element.
第1図は・従来の半導体レーデ用ステムの一例會示すも
のである。図中1は、鉄ま友は鉄系の合金で形成された
ステム本体である。ステ五本体1上に社、銅などからな
る素子保持用!ロック2が装着されている。ステ五本体
2には、1ノ一ド瞼1L通孔3が穿設されており、IJ
−ド1Iki貫通孔1には、シール部材4に開弁してリ
ード線5が挿着されている。このように構成された半導
体レーデ用ステム互は、素子保持用フロック2が鉄中麩
糸の合金からなるステ五本体に装着されているため、熱
伝導度は低くなシ、十分に放熱特性を向上できない欠点
があった。FIG. 1 shows an example of a conventional stem for semiconductor radar. 1 in the figure is a stem body made of iron-based alloy. For holding an element made of copper, etc. on the main body 1 of the main body 1! Lock 2 is attached. A 1st eyelid 1L through hole 3 is bored in the main body 2 of the main body 2, and the IJ
- The lead wire 5 is inserted into the through hole 1 of the lead wire 1 with the seal member 4 open. In the semiconductor radar stem unit constructed in this way, the flock 2 for holding the element is attached to the main body of the stem made of an alloy of iron and cotton thread, so the thermal conductivity is low and the heat dissipation properties are sufficient. There were weaknesses that could not be improved upon.
また、纂2図は、従来の半導体用レーデステムの他のf
lを示すものである6図中10は・銅などからなるスタ
ッドであプ、略円筒状の放熱部10af下部に有してい
る。放熱@JOa内には、リード−11が貫挿されてお
り、リード−11は、シール部材12によってスタッド
13に固着されている。/−ツドIJ上には、鍋などか
らなる素子保持用プロ、り14が装着されている。なお
Jobは、窓付キャ、グが装着される合金板である。こ
のように構成された半導体レーザ用ステムLiは・スタ
ッド10が鋼などの熱伝導度の高い材質で形成されてい
るので放熱性に優れる′が、高温に呈されると放熱WN
10&が半径方向に膨張するため、リード麿11がスタ
ッド10から剥れる欠点があった。In addition, Figure 2 shows other f of the conventional semiconductor radar stem.
Reference numeral 10 in FIG. 6 indicates a stud made of copper or the like, which is provided at the bottom of the substantially cylindrical heat dissipation portion 10af. A lead 11 is inserted through the heat radiation @JOa, and the lead 11 is fixed to the stud 13 by a sealing member 12. An element holding device 14 consisting of a pot or the like is mounted on the IJ. Note that Job is an alloy plate to which a window-equipped cage is attached. The semiconductor laser stem Li configured in this way has excellent heat dissipation properties because the stud 10 is made of a material with high thermal conductivity such as steel, but when exposed to high temperatures, the heat dissipation WN
Since 10 & expands in the radial direction, there is a drawback that the lead 11 can separate from the stud 10.
放熱部10mの肉厚を大きくするとリード線11の取外
れを防止できるが、大型になる間離がある。tた、ガラ
ス窓を有するキャップを溶接するための鉄十二yケル合
金からなる合金板12t−必要とし、価格が高くなる。If the thickness of the heat dissipating section 10m is increased, it is possible to prevent the lead wire 11 from coming off, but the lead wire 11 becomes larger and there is a gap. In addition, it requires 12 tons of alloy plate made of iron alloy for welding the cap with the glass window, which increases the price.
本発明は、かかる点に艦みてなされたもので、放熱特性
に優れ、しかもリード線が強固に取付けられ几半導体レ
ーデ用ステムを提供するものである。The present invention has been made in consideration of these points, and provides a stem for a solid semiconductor radar, which has excellent heat dissipation characteristics and has lead wires firmly attached to it.
以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.
@3図は、本発明の一実施例の斜視図である。Figure @3 is a perspective view of an embodiment of the present invention.
第4図は、同実施例の正面図である1図中20は、鉄或
はガラス封着用鉄合金で形成されたステム本体であシ、
ステム本体2#には、リード線貫通孔21とプロッタ欽
入孔12とが穿設されている。プロ、り嵌入孔22は、
断絢略半円形tなしておシ、ステム本体JO1−貫通し
ている。プロ、り嵌入孔22に社、鍋などの熱伝導が薮
入されている。ここで、ブロック嵌入孔22の形状は、
嵌入される素子保持用プロ、り21の露出面積が大きく
なるように#向半円形圧するのが望ましい。素子保持用
ブロック23の嵌入は、ステ五本体2oの下向に取付け
られる放熱11!(図示せず)との管着度を高くするた
めに・ステ五本体2oの下面と素子保持用ブロック2J
の端面とが#を埋同一平面になるように設層するのが望
ましい、tた、素子保持用ブロック2Jの固着は、ろう
付等の+段にょシ行い、後述するリード−14のガラス
到着工程ト同時に行うのが1iitLい。FIG. 4 is a front view of the same embodiment. In FIG. 1, 20 is a stem body made of iron or an iron alloy for glass sealing.
A lead wire through hole 21 and a plotter insertion hole 12 are bored in the stem body 2#. The professional fitting hole 22 is
It has a roughly semicircular shape and passes through the stem body JO1. A heat conductor such as a heat conductor for a pot, etc. is inserted into the fitting hole 22. Here, the shape of the block insertion hole 22 is as follows:
It is desirable to apply semicircular pressure in the # direction so that the exposed area of the element holding protrusion 21 to be inserted becomes large. The element holding block 23 is inserted into the heat dissipation unit 11 which is attached downward to the main body 2o of the main body 2o! (not shown) - The lower surface of the main body 2o and the element holding block 2J
It is desirable to lay the layer so that the end face of the lead 14 is flush with the end face of the lead 14, which will be described later. It is best to perform both steps at the same time.
リード−貫通孔21には、ガラス等からなるシール部材
25にょ9リ一ドWM24が貫挿固着されている。A sealing member 25 made of glass or the like and a lead WM 24 are inserted into the lead through hole 21 and fixed thereto.
而して・このように構成嘔れた半導体レーデ川ステムL
1は、ガラス對着用鉄合金勢からなるステム本体2oに
シール部材Elf介してリ−I’mJ4が権付けられて
いるので、^温の熱処理を受けてもシール部材24とス
テム本体20との熱膨張による差が小さく、リード綜1
4f確実に固層保持させておくことができる。Therefore, the semiconductor Lede River stem L configured like this
In No. 1, the stem body 2o made of a glass-attached iron alloy is attached with the Lee-I'mJ4 through the seal member Elf, so that the seal member 24 and the stem body 20 remain intact even when subjected to heat treatment at ^-temperature. Lead heel 1 with small difference due to thermal expansion
4f can be reliably held in a solid state.
また・素子保持用ブロック2Jは、七〇mmt直接放熱
器に接触させることができるので、極めて高い放熱特性
を有する。Furthermore, since the element holding block 2J can be brought into direct contact with a 70 mmt heat radiator, it has extremely high heat dissipation characteristics.
その結果、素子保持用ブロック23に装着された素子の
出力増大及び信頼性を向上させることができる。As a result, it is possible to increase the output and improve the reliability of the element mounted on the element holding block 23.
以上説明した如く、本発明に係る半導体レーデ用ステム
によれば、放熱特性に優れ、しかもリード線が強固に取
付けられている勢wA着な効*1有するものである。As explained above, the stem for a semiconductor radar according to the present invention has excellent heat dissipation characteristics and has the advantage of being firmly attached to the lead wire.
鉋1図は、へ、グーの嵌面にブロックを装着した従来の
半導体レーデ用ステムの正向図、凧2嫡は、スタッド型
の従来の半導体レーデ用ステムの断面図、凧3図は、本
発明の一実施例の斜視図、I@4図は、同実施例の貴向
図である。
20・・・ステム本体、11・・・リード−貫通孔、2
2・・・!口、り嵌入孔、2s・・・素子保持用ブロッ
ク、24・・・リード線、25・・・シール部材、SO
・・・半導体レーデ用ステム。
出願人代理人 ff31士 鈴 江 武 彦第1図
第2j’lQ
担
第3図
囚Figure 1 of the plane is a front view of a conventional semiconductor radar stem with a block attached to the fitting surface of the goo, Figure 2 of the kite is a cross-sectional view of a stud-type conventional stem for semiconductor radar, and Figure 3 of the kite is: A perspective view of an embodiment of the present invention, Figure I@4, is a view facing you of the embodiment. 20... Stem body, 11... Lead-through hole, 2
2...! Port, fitting hole, 2s...Element holding block, 24...Lead wire, 25...Sealing member, SO
...Stem for semiconductor radar. Applicant's agent FF31 Takehiko Suzue Figure 1 Figure 2j'lQ Prisoner Figure 3
Claims (1)
ム本体と、前記ブロック嵌入孔に痛面tm出するように
して嵌入さオL7t3E子保持用ブザ用ステム。Reed koji through hole, block insertion hole and force: The stem body is drilled and the stem for the buzzer for holding the L7t3E child is inserted into the block insertion hole so that the pain side tm is exposed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57047700A JPS58164285A (en) | 1982-03-25 | 1982-03-25 | Stem for semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57047700A JPS58164285A (en) | 1982-03-25 | 1982-03-25 | Stem for semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58164285A true JPS58164285A (en) | 1983-09-29 |
Family
ID=12782565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57047700A Pending JPS58164285A (en) | 1982-03-25 | 1982-03-25 | Stem for semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58164285A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100534201B1 (en) * | 2004-02-04 | 2005-12-07 | 주식회사 코스텍시스 | a stem for crystal laser diode package |
EP2256880A1 (en) * | 2008-03-18 | 2010-12-01 | Mitsubishi Electric Corporation | Laser light source module |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101296A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Photo semiconductor device |
-
1982
- 1982-03-25 JP JP57047700A patent/JPS58164285A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101296A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Photo semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100534201B1 (en) * | 2004-02-04 | 2005-12-07 | 주식회사 코스텍시스 | a stem for crystal laser diode package |
EP2256880A1 (en) * | 2008-03-18 | 2010-12-01 | Mitsubishi Electric Corporation | Laser light source module |
EP2256880A4 (en) * | 2008-03-18 | 2011-12-28 | Mitsubishi Electric Corp | Laser light source module |
US8391326B1 (en) | 2008-03-18 | 2013-03-05 | Mitsubishi Electric Corporation | Laser light source module |
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